JPS59167895A - 半導体メモリ回路 - Google Patents

半導体メモリ回路

Info

Publication number
JPS59167895A
JPS59167895A JP58041671A JP4167183A JPS59167895A JP S59167895 A JPS59167895 A JP S59167895A JP 58041671 A JP58041671 A JP 58041671A JP 4167183 A JP4167183 A JP 4167183A JP S59167895 A JPS59167895 A JP S59167895A
Authority
JP
Japan
Prior art keywords
holding current
word
word line
circuit
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58041671A
Other languages
English (en)
Japanese (ja)
Other versions
JPH031758B2 (enrdf_load_stackoverflow
Inventor
Joji Nokubo
野久保 丞二
Sadaji Tamura
田村 貞二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58041671A priority Critical patent/JPS59167895A/ja
Publication of JPS59167895A publication Critical patent/JPS59167895A/ja
Publication of JPH031758B2 publication Critical patent/JPH031758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP58041671A 1983-03-14 1983-03-14 半導体メモリ回路 Granted JPS59167895A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58041671A JPS59167895A (ja) 1983-03-14 1983-03-14 半導体メモリ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58041671A JPS59167895A (ja) 1983-03-14 1983-03-14 半導体メモリ回路

Publications (2)

Publication Number Publication Date
JPS59167895A true JPS59167895A (ja) 1984-09-21
JPH031758B2 JPH031758B2 (enrdf_load_stackoverflow) 1991-01-11

Family

ID=12614860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58041671A Granted JPS59167895A (ja) 1983-03-14 1983-03-14 半導体メモリ回路

Country Status (1)

Country Link
JP (1) JPS59167895A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58177591A (ja) * 1982-04-12 1983-10-18 Fujitsu Ltd スタテイツク型半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58177591A (ja) * 1982-04-12 1983-10-18 Fujitsu Ltd スタテイツク型半導体記憶装置

Also Published As

Publication number Publication date
JPH031758B2 (enrdf_load_stackoverflow) 1991-01-11

Similar Documents

Publication Publication Date Title
US4415992A (en) Memory system having memory cells capable of storing more than two states
US4344156A (en) High speed data transfer for a semiconductor memory
US4392212A (en) Semiconductor memory device with decoder for chip selection/write in
US4365319A (en) Semiconductor memory device
US4575825A (en) Semiconductor memory device
US4675850A (en) Semiconductor memory device
JPS61224520A (ja) 構成を変更可能な論理要素
US3703710A (en) Semiconductor memory
US4631707A (en) Memory circuit with power supply voltage detection means
US5493536A (en) Dual-port random access memory having memory cell controlled by write data lines and read enable line
US3962686A (en) Memory circuit
EP0037239B1 (en) A semiconductor memory device of a dynamic type having a data read/write circuit
JPH09204789A (ja) 半導体記憶装置
US6292388B1 (en) Efficient and robust random access memory cell suitable for programmable logic configuration control
US4665509A (en) Semiconductor memory device comprising address holding flip-flop
US4982365A (en) Semiconductor memory device with a potential level-setting circuit
US4470133A (en) Memory circuit having a decoder
US4563598A (en) Low power consuming decoder circuit for a semiconductor memory device
US3702926A (en) Fet decode circuit
US4758991A (en) Rewritable semiconductor memory device having a decoding inhibit function
JPS59167895A (ja) 半導体メモリ回路
US4918657A (en) Semiconductor memory device provided with an improved precharge and enable control circuit
US5661693A (en) Memory device for synchronously reading and writing data
JPS59217290A (ja) 半導体メモリ
US5243560A (en) Semiconductor memory device for storing a plurality of data on a word basis and operating method thereof