JPS59159157A - Dry process for manufacturing lithographic pattern - Google Patents

Abstract

PURPOSE:To improve the yield in production of a device by exposing a substrate maintained at relatively a low temp. into the gas of a resist having a low degree of polymn. to form a resist film thereon and removing the unexposed part after electron exposure thereof. CONSTITUTION:A substrate 1 disposed in an electron beam device is maintained at the relatively low temp. (-100 deg.C) at which the gas of a resist having a low degree of polymn. deposits and said substrate is exposed in the gaseous atmosphere of the resist to form a resist film 2 on the surface of the substrate 1. The substrate 1 is then maintained at the above-described temp. and in this state the film 2 is exposed with an electron beam to form an exposed resist pattern 3 having a required high degree of polymn. and thereafter the temp. of the substrate 1 is increased to the temp. (about 2.0 deg.C) approximate to an ordinary temp. to detach the resist 2 in the unexposed part from the substrate 1. The substrate is subjected to a treatment such as vapor deposition, sputtering or the like with the pattern 3 as a mask and thereafter the temp. of the substrate 1 is elevated to remove the mask of the pattern 3, by which the required device pattern 4 is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of creating an exposed resist pattern by a dry process (.C), specifically, a dry lithography pattern in which an exposed resist pattern is created by direct writing with an electron beam while controlling the temperature of the substrate. Regarding the manufacturing method.

In general, wet processing methods are mainly used to produce exposed resist patterns used in the production of highly integrated and high density devices such as semiconductor devices and Josephson junction devices. That is, a resist such as ρMMA or polystyrene is dissolved in a solvent and coated with a spinner to form a resist film on the substrate, and this is carried into an electron beam exposure device and exposed to electron beam in the desired pattern. After that, the substrate is removed from the exposure device. In this method, an exposed resist pattern is obtained by taking it out and immersing it in an etching solution (developer).

Then, using the obtained exposed resist pattern as a mask, necessary treatments such as vapor deposition, stepwise etching, plasma etching, or ion implantation are performed, and after that, the exposed resist pattern and turn mask are removed by chemical etching or plasma etching.

By the way, in the method of manufacturing exposed resist layers and turns using such wet processing, the exposure step is performed in a vacuum, and the development, etching and melting steps are performed in the atmosphere.

Depending on the configuration of the device, multiple turns may have to be repeated, and the light path and development process must be repeated at different locations, increasing manufacturing time and increasing the risk of surface contamination. The yield of device manufacturing is also poor.

The present invention has been made in view of the above, and it is an object of the present invention to provide a method for creating an exposed resist pattern using a dry process. :do.

This objective is achieved by controlling the thinness of the substrate in two stages, forming a resist film with a low degree of polymerization, exposing to electron beam, and removing the Lennost film. Ru. Depending on the type of device, a semiconductor such as silicon, a superconductor such as niobium, or an insulator such as crystal is used for the substrate. Dimensions. The resist is a renost with a low degree of polymerization such as styrene or polystyrene, and its monomer, dimer, or trimer is appropriately selected based on its adhesion to the substrate, or by adding catechol, divinylbenzene, etc., its degree of polymerization can be adjusted. The one adjusted appropriately is used.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

(2) When the substrate 1 placed in an electron beam exposure device (not shown) is maintained at a relatively low temperature (-100°C) and the gas Q of renost (styrene) with a low degree of polymerization is filtered, the surface of the substrate is The gas is deposited to form the Rennost film 2. The thickness of the film is adjusted as appropriate depending on the flow rate of the Rennost gas.

(2) While the substrate is maintained at the above temperature, the resist film 2 is exposed to an electron beam to form an exposed resist pattern 3 having a desired high degree of polymerization.

■) When the temperature of the substrate is raised to around room temperature (approximately 2.0°C), only the exposed resist pattern 3 with a high degree of polymerization remains on the substrate, and the resist 2 with a low degree of polymerization in the unexposed area is separated and removed. A resist pattern is formed.

In the present invention, an exposed Renost pattern is created simply by raising the substrate temperature from low temperature to room temperature, so the substrate is not transferred from the inside of the wall to the atmosphere as in wet processing, but is carried out in the photocoupler. able to work. This reduces manufacturing time and eliminates the risk of contamination of the substrate surface.
This also improves the yield of manufacturing highly integrated devices.

θ) Using the obtained exposed Renost Gutan 3 as a mask, vapor deposition, snow R tuttering, chemical lubrication,
Necessary treatments such as ion implantation or 70 lasma etching are performed depending on the intended device fabrication.

(9) Thereafter, the mask of the Lennost pattern 3 having a high degree of polymerization is removed by raising the temperature of the substrate (id about 250° C. in the case of styrene) or by plasma etching to form a desired device pattern 4.

The broken line in the rightmost figure (stage 0) indicates the form before plasma etching (stage Q). ) As described in detail below, in the present invention, all processes are performed in a dry state, so the process is simpler and easier compared to the conventional wet processing method, and the risk of contamination is extremely low.) As a result, it has many advantages such as improving the yield of device manufacturing.

[Brief explanation of the drawing]

The attached drawings are process explanatory diagrams of the manufacturing method of the present invention. (Symbols in the figure) 1...Substrate, 2...Lenost coating with a low degree of polymerization, 3...
...Exposure Lennost pattern with high degree of polymerization, 4...devices and patterns. Patent applicant: RIKEN 1.1 Director General], Ir(i)-Ji Showrn 3 F Year Patent Application No. 3
No. 3371 2 Title of the invention Dry lithography
Pattern manufacturing method; 3 Relationship of the person making the amendment with outside the city Applicant name (679) Rikagaku I ν (death place 4 Agent 5, date of amendment KII order Ta month 37, Showa year, <
The attached figure is corrected as shown in the attached sheet. (S) "The attached drawings are explanatory drawings." in line B of the specification No. 1 shall be corrected as follows. "Figure 1 is an explanatory diagram of step (2) of the process of the manufacturing method of the present invention. Figure 2 is an explanatory diagram of step (2) of the process of the manufacturing method of the present invention. Figure 3 is an explanatory diagram of step (2) of the process of the manufacturing method of the present invention. Figures ≠ (a), b), and (c) are explanatory diagrams of step ■ in the process of the manufacturing method of the present invention, and figure ≠ (a) is an explanatory diagram of step Figure ≠ (b)
Figure fc) shows how the required processing is carried out by ion implantation, and Figure fc) by plasma etching. ps 3 (al, (b) and (c) figure 4' (a
), (b) and (c) are explanatory diagrams of finished products shown in accordance with the processes shown in FIGS. ” 3. Correct the errors in the law in the specification. Figure 3S Figure 5(a)

Claims (6)

[Claims] (1) The substrate was maintained at a relatively low temperature at which the gas of the low-polymerized IJJ resist was deposited, and the substrate was placed in the gas atmosphere to form a renost film on the surface of the substrate. The resist film is exposed to electron beams to create a highly polymerized exposed resist and turn. The temperature of the substrate is raised to a temperature close to room temperature at which the resist with a low degree of polymerization separates, and the resist in the non-MW light portion is separated from the substrate, and the light-blocking resist with a high degree of polymerization is placed on the substrate. A dry phosphorography pattern manufacturing method that leaves behind a pattern. (2) Maintain the substrate at a relatively low temperature at which the gas of the resist with a low degree of polymerization is deposited. Expose the substrate to the gas atmosphere described above in step 1 to form a Resos IM film on the substrate surface, and maintain the substrate at the prefilling temperature. A resist pattern with a high degree of polymerization is created by electronically exposing the Shitamama N Renost coating. The temperature of the substrate is raised to a temperature around room temperature at which the resist with a low degree of polymerization detaches, and the unexposed portions of the resist are detached from the substrate, leaving the exposed resist pattern with a high degree of polymerization on the substrate. The exposed pattern is removed by applying a necessary treatment to the unexposed portion, and then raising the temperature of the substrate to a temperature at which the exposed resist with a high degree of polymerization detaches, which is higher than the temperature around room temperature. Dry phosphorography noya turn manufacturing method. (3) The substrate is maintained at a relatively low temperature at which a resist gas having a low degree of polymerization is deposited, and the substrate is exposed to the gas atmosphere to form a resist film on the substrate surface. While maintaining the substrate at the above temperature, the N-Renost film is subjected to electro-fogging to form a focused renost pattern with a high degree of polymerization b. The substrate is heated to a temperature around room temperature at which the resist with a low degree of polymerization separates. The temperature is raised to separate the unexposed portions of the lenost from the substrate, leaving the above-mentioned heavy and heavily exposed resist pattern on the substrate. A dry phosphorography noseturn manufacturing method characterized by performing necessary treatments on unexposed areas and removing foggy patterns by plasma etching. (4) The above-mentioned required treatments include vapor deposition, sputtering,
The dry lithography turn manufacturing method according to claim 1, 2 or 3, which is ion implantation or chemical deposition. (5) The dry lithography multi-turn manufacturing method according to claim 1, 2 or 3, wherein the resist is styrene or polystyrene. (6) Claim 1, wherein the resist is made by adding catechol and divinylbenzene to styrene;
The dry phosphorography/arm turn manufacturing method according to item 2 or 3.