JPS59155180A - シリコン光電変換素子の製造方法 - Google Patents

シリコン光電変換素子の製造方法

Info

Publication number
JPS59155180A
JPS59155180A JP58028570A JP2857083A JPS59155180A JP S59155180 A JPS59155180 A JP S59155180A JP 58028570 A JP58028570 A JP 58028570A JP 2857083 A JP2857083 A JP 2857083A JP S59155180 A JPS59155180 A JP S59155180A
Authority
JP
Japan
Prior art keywords
disilane
type
photoelectric conversion
glow discharge
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028570A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0552673B2 (enrdf_load_html_response
Inventor
Nobuhiro Fukuda
福田　信弘
Makoto Konagai
誠 小長井
Yutaka Ohashi
豊 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP58028570A priority Critical patent/JPS59155180A/ja
Publication of JPS59155180A publication Critical patent/JPS59155180A/ja
Publication of JPH0552673B2 publication Critical patent/JPH0552673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP58028570A 1983-02-24 1983-02-24 シリコン光電変換素子の製造方法 Granted JPS59155180A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028570A JPS59155180A (ja) 1983-02-24 1983-02-24 シリコン光電変換素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028570A JPS59155180A (ja) 1983-02-24 1983-02-24 シリコン光電変換素子の製造方法

Publications (2)

Publication Number Publication Date
JPS59155180A true JPS59155180A (ja) 1984-09-04
JPH0552673B2 JPH0552673B2 (enrdf_load_html_response) 1993-08-06

Family

ID=12252274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028570A Granted JPS59155180A (ja) 1983-02-24 1983-02-24 シリコン光電変換素子の製造方法

Country Status (1)

Country Link
JP (1) JPS59155180A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117370A (ja) * 1987-07-24 1989-05-10 Sanyo Electric Co Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117370A (ja) * 1987-07-24 1989-05-10 Sanyo Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0552673B2 (enrdf_load_html_response) 1993-08-06

Similar Documents

Publication Publication Date Title
KR910005370B1 (ko) 극초단파 에너지를 사용한 비정질 반도체 합금 및 소자 제조방법
US4615905A (en) Method of depositing semiconductor films by free radical generation
US4664937A (en) Method of depositing semiconductor films by free radical generation
JPS6239550B2 (enrdf_load_html_response)
JP2533639B2 (ja) Ｐ形炭素添加非晶質シリコンの生成方法
US20120325284A1 (en) Thin-film silicon tandem solar cell and method for manufacturing the same
US5242505A (en) Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects
US4749588A (en) Process for producing hydrogenated amorphous silicon thin film and a solar cell
JP2003188400A (ja) 結晶性ＳｉＣ膜の製造方法、結晶性ＳｉＣ膜及び太陽電池
JPS59155180A (ja) シリコン光電変換素子の製造方法
US4701343A (en) Method of depositing thin films using microwave energy
WO2012089685A2 (en) Siox n-layer for microcrystalline pin junction
Takei et al. High‐energy conversion efficiency amorphous silicon solar cells by photochemical vapor deposition
JPH0918038A (ja) 光電変換素子
Kenne et al. High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane
JPH0563951B2 (enrdf_load_html_response)
JPS6150379A (ja) 光電変換素子の製法
JPH07183550A (ja) 非晶質光電変換素子
JP2688220B2 (ja) 非晶質太陽電池
JPH0519833B2 (enrdf_load_html_response)
JPH0563950B2 (enrdf_load_html_response)
EP0137043B1 (en) Method of manufacturing hydrogenated amorphous silicon thin film and solar cell
JP2575397B2 (ja) 光電変換素子の製造方法
JP2543498B2 (ja) 半導体薄膜
JPH02177371A (ja) アモルファス太陽電池の製造方法