JPS59152602A - Thin film resistor - Google Patents
Thin film resistorInfo
- Publication number
- JPS59152602A JPS59152602A JP58026718A JP2671883A JPS59152602A JP S59152602 A JPS59152602 A JP S59152602A JP 58026718 A JP58026718 A JP 58026718A JP 2671883 A JP2671883 A JP 2671883A JP S59152602 A JPS59152602 A JP S59152602A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film resistor
- resistance
- film
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
この発明は一薄膜抵抗一特１てＮ・−Ｃｒ糸の薄膜抵抗
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film resistor, and more particularly to a thin film resistor of N.--Cr yarn.
周知のようにこの挿画Ｉｌか抵抗は〜セ“チミツク、ガ
ラス等の絶縁性の基相の表面に、Ｎ・−Ｃｒ系抵抗材料
を用いて薄膜を、蒸着或いはスパッタリングによって生
成−ｔ′ることにより１１Ｎ成される。この場合生成さ
ねた薄膜の長期安定性を確保１−ることが姿求され一従
来でけ薄膜の表面をＳ・０．８・（゛）。As is well known, the resistor in this illustration is produced by depositing or sputtering a thin film of an N.-Cr-based resistive material on the surface of an insulating substrate such as silicone or glass. In this case, it is desired to ensure the long-term stability of the thin film produced, and one conventional method is to reduce the surface of the thin film to S.0.8.(゛).
等の保護膜でニー）するようにして１ハた。1 time with a protective film such as knee).
しかしこのような保護膜の着膜作業のために抵抗生成と
け別個に着膜を実施しなければな医ず、それだけ着膜回
数が増すと−゛った不便がある。これを解決するために
、Ｎ・−Ｃｒ系抵抗材料［６・を添加したものを、蒸着
ｙはスパッタリングして薄膜とｌ、た構１）丈が木発明
者によって別途提案さハた。こノ１に」′ｆ１ば、薄膜
中１１ｙ後のア二−ｌしによって一薄膜の表面に３・の
酸化物が生１− こｆｌが保護膜の役目を果すようＫな
るＬ、又蒸着回数け」回ですむと１／１つた便利性づ（
ある。However, in order to deposit such a protective film, it is necessary to perform resistor generation and film deposition separately, and this increases the number of times the film is deposited, which is very inconvenient. In order to solve this problem, the inventor separately proposed a structure in which an N.--Cr-based resistance material [6] was vapor-deposited by sputtering to form a thin film. In this case, an oxide of 3 is formed on the surface of the thin film by annealing after 11y in the thin film. It is 1/1 less convenient if it only takes a few times (
be.
ととろが前記のように一出 を添加して生成した薄１１
ツ１の面積抵抗けこれを添加りない場合Ｊｉｌｔも高く
なる傾向７′Ｉ；ある。そのため低抵抗価の薄膜士１（
杭がルし求さｈふときは、１１９厚を厚くしていかなけ
ｈばなＩ−な−ことにな′る。ところがこのようＫ ｌ
ヴｉ厚ｆｔＰｔくするためには−その蒸着時間を長＜
１−なけねばなＬｆｉいようになる。Thin 11 produced by Totoro by adding Ichide as described above.
There is a tendency for Jilt to become high if the sheet resistance of 1 is not added. Therefore, it has a low resistance value.
When the pile needs to be thickened, the thickness must be made thicker, otherwise the pile will become unstable. However, like this
In order to increase the thickness ftPt, increase the deposition time.
1- I have to have Lfi.
この発１ｊＪ、Ｉ ｉｄ薄膜の長期安定性を確保１−る
ために、Ｎ・−Ｃｒ系抵抗相料Ｋ 、Ｓ−を添加して薄
Ｉｔいを生成する場合でも一面積抵抗を低減させるよう
にすることを目的）ニーする。′
この発明け、Ｎ・二Ｃｒ糸薄１１り冬生成して薄膜抵抗
とす−るとき−Ｎ・−Ｃｒ系抵抗材料に、２〜６市量％
のＳ・と、２〜１０％量物のＡ７？′を添加して薄膜と
してなることを特徴とする。In order to ensure the long-term stability of the I id thin film, we added N-Cr-based resistive phase materials K and S to reduce the single-area resistance even when producing a thin film. knee) ' According to this invention, when a thin N.-2Cr yarn is produced to form a thin film resistor, 2 to 6% of the market weight is added to the N.-Cr-based resistance material.
S・and A7 with 2-10% weight? ′ is added to form a thin film.
このような構成力・らなる薄膜抵抗σ−８・ のみを添
加して得た薄膜よりも面積抵抗を充分小さくすると七が
できるようになる。したがって膜厚を厚くすることなく
、低抵抗値の薄膜が得ちれるようになる。このことけ薄
膜の生成に要する時間の短縮をもたらすことを意味すふ
。又この組成でも薄眸生成律のアニールにより、薄膜表
面″ｒ″Ｓ・の酸化物が生ｅされることにより、これが
保護膜と［ての役目を果す。したがって従来のようＫＳ
・０゜３’Ｏｐ＠の保：ｓ膵の形成のためのみの着膜作
業は不用となる。特にこのｍｓ・０等の着膜は高周波ス
パッタ法によるのを普通としており、矛のために高層Ｈ
源を必要とするが、この発明けこのような高周波源を何
瓜必要としない。スパッタリングにより着膜を実施りよ
うとするときけ直流スパッタリングでも可能である、
次にこの発明の詳細な説明する。第１表はこの発明によ
る抵抗材料の組成と、矛の薄＃にょる出現抵抗値χと、
その試料標準偏差。を示すもので、比較のためＫＳ−を
添加したものも併示して込み。試料番＠１〜８はこの発
明によるものであり、試料番号９〜１２けＳ−添加のも
のである。試Ｕ サｙ 、ｆ Ｉ′ｖｉｊ、［ｕｌ、ｆ
’＋’Ｌｆｆｌ長さ５２Ｍのセラミック製九棒である、
サンプル数はいずれも１０個である。薄膜生成は・いず
れも直流マグネトロンスパッタリング法によった。If the sheet resistance is made sufficiently smaller than that of a thin film obtained by adding only such a constitutive force, σ-8, a thin film resistance of σ-8 can be obtained. Therefore, a thin film with a low resistance value can be obtained without increasing the film thickness. This means that the time required to produce a thin film can be shortened. Also, even with this composition, an oxide of "r"S* is produced on the surface of the thin film by annealing according to the thin film formation principle, and this serves as a protective film. Therefore, as before, KS
・Maintenance of 0°3'Op@: The film deposition process only for forming the s pancreas becomes unnecessary. In particular, this ms・0 film is usually deposited using high-frequency sputtering, and due to the high-rise
However, the present invention does not require such a high frequency source. When film deposition is to be carried out by sputtering, direct current sputtering is also possible. Next, the present invention will be described in detail. Table 1 shows the composition of the resistive material according to the present invention, the apparent resistance value χ of the spear, and
Its sample standard deviation. For comparison, the sample with KS- added is also shown. Sample numbers @1 to 8 are according to the present invention, and sample numbers 9 to 12 are those with S-addition. Test U sy, f I'vij, [ul, f
'+'Lffl nine ceramic rods with a length of 52M,
The number of samples is 10 in each case. Thin film formation was done by direct current magnetron sputtering method.
＃１表
上記した各試料について、高温放置したときの抵抗値Ｖ
代案ΔＦ？を示Ｌ ７’ｃ １７）が第２表である。同
＊ｉｊｌ’７０ｔ’： の温度下で薄膜抵抗を放置した
とき一千の放置ＦＦｒ？＋１１１に対する抵抗値変化率
ムＲと、 １０個の試料中の最大変化率ｍａχと、最小
変代案ｍ１ｎ（いずわも％で示−１０）とを併示したも
のである。#1 Table Resistance value V when left at high temperature for each sample mentioned above
Alternative ΔF? Table 2 shows L 7'c 17). Same *ijl'70t': When a thin film resistor is left at a temperature of 1,000 FFr? The resistance value change rate m R for +111, the maximum change rate maχ among the 10 samples, and the minimum change rate m1n (all expressed in % -10) are shown together.
第２表
上記した画表から理解されるようＩＣ１この発明による
薄膜抵抗によれば、面積抵抗を７Ｐ“（オーム／［］。Table 2 As can be understood from the above chart, IC1 according to the thin film resistor according to the present invention has a sheet resistance of 7P'' (ohm/[]).
以下同じ。）以下Ｊ：することができ、Ｓ・のＡを添加
したものが、最低１０２であるところ≠１らすわば一面
猜抵抗が充分小さＩ、−１薄１ｐＰｌ抵抗を得られるこ
とになるう又安定性については第２表から理解さｆｌみ
ように、Ｓ・のみを添加したもの（試料番号９〜１２）
と比較して九−抵抗値変化率２′Ｉ；大き（顕著に差を
生ずることもない。むＬろ試料番号６〜８のものについ
ては抵抗値Ｖ化率の減少が顕著であるー
以上詳述したようにこの発明によれば、Ｓ・ を添加し
たと７とによって一保護嘆の生成工程を簡略した場合で
も、面積抵抗の小さいものが得られるようになり、した
−ｈ；って膜厚を厚くする必Ｓけないか１着膜時間を長
く魯せずして低抵抗化が可能となり一更に薄膜生成工程
けＳ・を添加したものと同ｌ〕〈１回ですむとｂつだ効
果８−奏する、＄
特許出願人 ローム株式会社
代理人中沢謹之助same as below. ) The following J: can be done, and if the addition of A of S is at least 102 ≠ 1, the one-plane resistance is sufficiently small I, -1 thin 1pPl resistance can be obtained. Regarding stability, as can be seen from Table 2, samples containing only S (sample numbers 9 to 12)
Compared to 9-resistance value change rate 2'I: large (there is no noticeable difference.Of course, for sample numbers 6 to 8, the decrease in resistance value change rate is remarkable. As described in detail, according to the present invention, even when the step of forming a protective layer is simplified by adding S., a product with a small sheet resistance can be obtained. It is possible to lower the resistance without increasing the film thickness or requiring a long film deposition time. Effect 8 - Performance, $ Patent applicant Kinnosuke Nakazawa, agent of ROHM Co., Ltd.
Claims (1)
・−Ｃｒ系抵抗材料の薄Ｐ？７５・ら°なる薄膜抵抗。S・2~6 ru - △p 2~. IO small amount ″% added N
- Thin P of Cr-based resistance material? A thin film resistor of 75°.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58026718A JPS59152602A (en) | 1983-02-19 | 1983-02-19 | Thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58026718A JPS59152602A (en) | 1983-02-19 | 1983-02-19 | Thin film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59152602A true JPS59152602A (en) | 1984-08-31 |
Family
ID=12201121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58026718A Pending JPS59152602A (en) | 1983-02-19 | 1983-02-19 | Thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59152602A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63147305A (en) * | 1986-12-11 | 1988-06-20 | Tdk Corp | Metal thin-film resistor |
| JP2007027299A (en) * | 2005-07-14 | 2007-02-01 | Matsushita Electric Ind Co Ltd | Thin-film resistor, electronic component using the same, and its manufacturing method |
-
1983
- 1983-02-19 JP JP58026718A patent/JPS59152602A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63147305A (en) * | 1986-12-11 | 1988-06-20 | Tdk Corp | Metal thin-film resistor |
| JP2007027299A (en) * | 2005-07-14 | 2007-02-01 | Matsushita Electric Ind Co Ltd | Thin-film resistor, electronic component using the same, and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6323305A (en) | Highly stable metal film and manufacture of the same | |
| SE8400418D0 (en) | LONG LIFE ELECTRIC FOR ELECTRICAL LAMPS AND PROCEDURES FOR PRODUCING THEMSELVES | |
| US3501322A (en) | Glazed ceramic substrate for electronic microcircuits | |
| JPS59152602A (en) | Thin film resistor | |
| JP2539214B2 (en) | Glass ceramics and manufacturing method thereof | |
| JPS59204625A (en) | Manufacture of transparent electrically conductive film | |
| JPS6320377B2 (en) | ||
| GB1133402A (en) | Improvements relating to stable nickel-chromium resistance films | |
| JPS6316464B2 (en) | ||
| JPS63243261A (en) | Production of electrically conductive transparent film having low resistance | |
| JPS59230666A (en) | Formation of flame sprayed film | |
| US3315208A (en) | Nitrogen stabilized titanium thin film resistor and method of making same | |
| JPH04114929A (en) | Fusing glass composition | |
| JPH0344007A (en) | Manufacture of thin film resistor | |
| JP2875561B2 (en) | Substrate for tungsten thin film electrode | |
| JPS58175833A (en) | Manufacture of compound semiconductor thin-film structure | |
| US3803678A (en) | The method of making nickel oxide capacitor | |
| JPH02247904A (en) | Ceramic dielectric thin film and manufacture thereof | |
| JPS5929410A (en) | Formation of magnetic thin film | |
| JPS6130403B2 (en) | ||
| JPS59152601A (en) | Thin film resistor and method of producing same | |
| KR850001732Y1 (en) | Magnetic head | |
| JPH02430B2 (en) | ||
| JPS60206310A (en) | Electrode film forming method of crystal resonator | |
| JPS62128101A (en) | Thermal head |