JPS59146943U - Pressure contact structure type semiconductor device - Google Patents

Pressure contact structure type semiconductor device

Info

Publication number
JPS59146943U
JPS59146943U JP3974883U JP3974883U JPS59146943U JP S59146943 U JPS59146943 U JP S59146943U JP 3974883 U JP3974883 U JP 3974883U JP 3974883 U JP3974883 U JP 3974883U JP S59146943 U JPS59146943 U JP S59146943U
Authority
JP
Japan
Prior art keywords
semiconductor device
structure type
type semiconductor
contact structure
pressure contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3974883U
Other languages
Japanese (ja)
Inventor
坂本 洋明
Original Assignee
日本インター株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本インター株式会社 filed Critical 日本インター株式会社
Priority to JP3974883U priority Critical patent/JPS59146943U/en
Publication of JPS59146943U publication Critical patent/JPS59146943U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本考案に係る圧接構造型半導体装置に使用さ
れる半導体基板のパターン形状の一例を示す図であって
、同図Aは、その平面図、同図B     −は、同図
AのX−X線に沿う断面図、第2図は、従来の圧接構造
型半導体装置に使用される接点プレートの平面図、第3
図は、同じ〈従来の半導体基板に載置固定される接点プ
レートの側面図、第4図、第5図は、本考案の第1の実
施例を示し、第4図は、接点プレートの平面図、第5図
は、上記接点プレートを半導体基板上に載置固定した状
態の側面図、第6図は、本考案に係る第2の実施例を示
し、第5図同様の一部切欠した側面図である・ 10・・・半導体基板、11・・・接点プレート、12
・・・凹所。
FIG. 1 is a diagram showing an example of the pattern shape of a semiconductor substrate used in a press-contact structure type semiconductor device according to the present invention, in which FIG. 1A is a plan view thereof, and FIG. FIG. 2 is a plan view of a contact plate used in a conventional press-contact structure type semiconductor device, and FIG.
The figures are the same (side view of a conventional contact plate placed and fixed on a semiconductor substrate), Figures 4 and 5 show the first embodiment of the present invention, and Figure 4 is a plane view of the contact plate. 5 is a side view of the contact plate placed and fixed on a semiconductor substrate, and FIG. 6 shows a second embodiment of the present invention, with a partially cutaway view similar to that shown in FIG. 5. It is a side view. 10... Semiconductor substrate, 11... Contact plate, 12
...concavity.

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)半導体基板の一主面上に第1電極および第2電極
が互いに入り組むように絶縁分離された前記基板をこの
基板上に載置固定される接点プレートを介して加圧力が
付与される圧接構造型半導体装置において、前記プレー
トの外周に半径方向に突出する複数の突起を設け、この
突起と前記半導体基板の外周とを接着材にて固定したこ
とを特徴とする圧接構造型半導体装置。
(1) A pressurizing force is applied to the substrate, which is insulated and separated on one main surface of the semiconductor substrate so that the first electrode and the second electrode intertwine with each other, through a contact plate that is placed and fixed on this substrate. A pressure contact structure type semiconductor device, characterized in that a plurality of protrusions projecting in the radial direction are provided on the outer periphery of the plate, and the protrusions and the outer periphery of the semiconductor substrate are fixed with an adhesive.
(2)前記突起を折り曲げ、前記半導体基板の表面との
間に凹所が形成されるようにしたことを特徴とする実用
新案登録請求の範囲第1項記載の圧接構造型半導体装置
(2) The press-contact structure type semiconductor device according to claim 1, wherein the protrusion is bent so that a recess is formed between the protrusion and the surface of the semiconductor substrate.
(3)前記突起の裏面側を加工して凹所が形成されるよ
うにした特徴とする実用新案登録請求の範囲第1項記載
の圧接構造型半導体装置。
(3) The pressure contact structure type semiconductor device according to claim 1, which is a registered utility model, characterized in that a recess is formed by processing the back side of the protrusion.
JP3974883U 1983-03-22 1983-03-22 Pressure contact structure type semiconductor device Pending JPS59146943U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3974883U JPS59146943U (en) 1983-03-22 1983-03-22 Pressure contact structure type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3974883U JPS59146943U (en) 1983-03-22 1983-03-22 Pressure contact structure type semiconductor device

Publications (1)

Publication Number Publication Date
JPS59146943U true JPS59146943U (en) 1984-10-01

Family

ID=30170384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3974883U Pending JPS59146943U (en) 1983-03-22 1983-03-22 Pressure contact structure type semiconductor device

Country Status (1)

Country Link
JP (1) JPS59146943U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265667A (en) * 1975-11-27 1977-05-31 Mitsubishi Electric Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265667A (en) * 1975-11-27 1977-05-31 Mitsubishi Electric Corp Semiconductor device

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