JPS59145053U - semiconductor laser equipment - Google Patents

semiconductor laser equipment

Info

Publication number
JPS59145053U
JPS59145053U JP3768483U JP3768483U JPS59145053U JP S59145053 U JPS59145053 U JP S59145053U JP 3768483 U JP3768483 U JP 3768483U JP 3768483 U JP3768483 U JP 3768483U JP S59145053 U JPS59145053 U JP S59145053U
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser equipment
case
base
whole surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3768483U
Other languages
Japanese (ja)
Inventor
水口　公秀
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP3768483U priority Critical patent/JPS59145053U/en
Publication of JPS59145053U publication Critical patent/JPS59145053U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は典型的な半導体レーザ装置を示す断面図、第２
図Ａ、　Ｂはビーム広がり特性を示す特性図である。 −１・・・基台、２・・・ケース、７・・・半導体レー
ザ素子。Figure 1 is a cross-sectional view showing a typical semiconductor laser device, Figure 2 is a cross-sectional view showing a typical semiconductor laser device;
Figures A and B are characteristic diagrams showing beam spread characteristics. -1...Base, 2...Case, 7...Semiconductor laser element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 導電性の基台、該基台の一生面を被覆するケース、該ケ
ース内に配設された半導体レーザ素子からなり、上記基
台の一生面及び上記ケース内面は黒色樹脂にてコーティ
ングされていることを特徴とする半導体レーザ装置。It consists of a conductive base, a case that covers the whole surface of the base, and a semiconductor laser element disposed within the case, and the whole surface of the base and the inner surface of the case are coated with black resin. A semiconductor laser device characterized by:
JP3768483U 1983-03-16 1983-03-16 semiconductor laser equipment Pending JPS59145053U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3768483U JPS59145053U (en) 1983-03-16 1983-03-16 semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3768483U JPS59145053U (en) 1983-03-16 1983-03-16 semiconductor laser equipment

Publications (1)

Publication Number Publication Date
JPS59145053U true JPS59145053U (en) 1984-09-28

Family

ID=30168372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3768483U Pending JPS59145053U (en) 1983-03-16 1983-03-16 semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JPS59145053U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148482A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device
JPS55148483A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148482A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device
JPS55148483A (en) * 1979-05-08 1980-11-19 Canon Inc Semiconductor laser device

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