JPS59142796A - ジヨセフソン記憶回路の駆動方法 - Google Patents

ジヨセフソン記憶回路の駆動方法

Info

Publication number
JPS59142796A
JPS59142796A JP58015660A JP1566083A JPS59142796A JP S59142796 A JPS59142796 A JP S59142796A JP 58015660 A JP58015660 A JP 58015660A JP 1566083 A JP1566083 A JP 1566083A JP S59142796 A JPS59142796 A JP S59142796A
Authority
JP
Japan
Prior art keywords
cell
current
switch element
branch
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58015660A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0381240B2 (enrdf_load_stackoverflow
Inventor
Ichiro Ishida
一郎 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58015660A priority Critical patent/JPS59142796A/ja
Publication of JPS59142796A publication Critical patent/JPS59142796A/ja
Publication of JPH0381240B2 publication Critical patent/JPH0381240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP58015660A 1983-02-02 1983-02-02 ジヨセフソン記憶回路の駆動方法 Granted JPS59142796A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58015660A JPS59142796A (ja) 1983-02-02 1983-02-02 ジヨセフソン記憶回路の駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58015660A JPS59142796A (ja) 1983-02-02 1983-02-02 ジヨセフソン記憶回路の駆動方法

Publications (2)

Publication Number Publication Date
JPS59142796A true JPS59142796A (ja) 1984-08-16
JPH0381240B2 JPH0381240B2 (enrdf_load_stackoverflow) 1991-12-27

Family

ID=11894889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58015660A Granted JPS59142796A (ja) 1983-02-02 1983-02-02 ジヨセフソン記憶回路の駆動方法

Country Status (1)

Country Link
JP (1) JPS59142796A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0381240B2 (enrdf_load_stackoverflow) 1991-12-27

Similar Documents

Publication Publication Date Title
Alamdar et al. Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing
US6269027B1 (en) Non-volatile storage latch
Konno et al. Fully functional operation of low-power 64-kb Josephson-CMOS hybrid memories
JPH0492287A (ja) ダイナミック・ランダム・アクセス・メモリ
EP0306519B1 (en) Current sensing differential amplifier
US20120314489A1 (en) Systems and methods for direct communication between magnetic tunnel junctions
US4601015A (en) Josephson memory circuit
JPH03278396A (ja) 半導体記憶装置
JPS59142796A (ja) ジヨセフソン記憶回路の駆動方法
US5022003A (en) Semiconductor memory device
JP3821307B2 (ja) フラッシュライト可能な半導体メモリ装置
US3126529A (en) Non-destructive read-out
US4323984A (en) Switching equipment using magnetic domains
US3145310A (en) Superconductive in-line gating devices and circuits
US3149312A (en) Cryogenic memory device with shifting word registers
JP2004103212A (ja) 磁気ランダムアクセスメモリ
JPS59175094A (ja) 半導体メモリ
US3452333A (en) Cryoelectric memories
JPS5829198A (ja) ジヨセフソン・メモリ回路
JPH05800B2 (enrdf_load_stackoverflow)
Anacker Superconducting memories employing Josephson devices
JPH05799B2 (enrdf_load_stackoverflow)
JPH0262781A (ja) メモリ回路
JPH01204522A (ja) セレクター回路
JPS62236199A (ja) 電気的消去型半導体不揮発性メモリ