JPS59136467A - Treatment of peeled scale in dip-forming process - Google Patents
Treatment of peeled scale in dip-forming processInfo
- Publication number
- JPS59136467A JPS59136467A JP58008164A JP816483A JPS59136467A JP S59136467 A JPS59136467 A JP S59136467A JP 58008164 A JP58008164 A JP 58008164A JP 816483 A JP816483 A JP 816483A JP S59136467 A JPS59136467 A JP S59136467A
- Authority
- JP
- Japan
- Prior art keywords
- peeling
- molten metal
- chips
- holding furnace
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 239000002344 surface layer Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 206010040844 Skin exfoliation Diseases 0.000 description 30
- 239000002699 waste material Substances 0.000 description 14
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004484 Briquette Substances 0.000 description 1
- 208000035874 Excoriation Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000010775 animal oil Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/003—Apparatus
- C23C2/0034—Details related to elements immersed in bath
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/003—Apparatus
- C23C2/0035—Means for continuously moving substrate through, into or out of the bath
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/003—Apparatus
- C23C2/0038—Apparatus characterised by the pre-treatment chambers located immediately upstream of the bath or occurring locally before the dipping process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Coating With Molten Metal (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の技術分野］
本発明はディップフォーミングプロセスにおける皮剥屑
処理方法に係り、特にディップフォーミングプロセスの
皮剥工程で排出される皮剥層を再利用するようにした皮
剥屑処理方法に関する。Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to a method for treating peeling debris in a dip forming process, and particularly to a peeling debris treatment method that reuses the peeling layer discharged in the peeling step of a dip forming process. Regarding the method.
［発明の技術的背景とその問題点］
一般にディップフォーミングプロセスおいては、第１図
に示すように種線１をプルブロック２により引ぎ出して
矯正ローラ３および矯正ダイ４により矯正した後、矯正
ローラ５および引き抜きダイ６を経て皮むきダイアに送
り、ここで種線１の表面層を切削除去し、その後直ちに
真空室８に導きこの真空室８から溶融金属を収容したク
ルージプル９内を通過させて冷却室１０に導き、この冷
却室１０内において冷却水により種線１の外周面に付着
した溶融金属を凝固させて種線１よりも大径の素線１１
を得、この素線１１を圧延機１２に送って所望の外形ま
で圧延して線材が製造される。[Technical background of the invention and its problems] Generally, in the dip forming process, as shown in FIG. It is sent to a peeling die via a straightening roller 5 and a drawing die 6, where the surface layer of the seed wire 1 is cut off, and then immediately led to a vacuum chamber 8, from which it passes through a cruise pull 9 containing molten metal. The molten metal adhered to the outer peripheral surface of the seed wire 1 is solidified by cooling water in the cooling chamber 10 to form a wire 11 having a larger diameter than the seed wire 1.
This strand 11 is sent to a rolling mill 12 and rolled to a desired external shape to produce a wire rod.
ここでディップフォーミング用の原材料、例えば電気銅
１３は余熱炉１４で余熱された後、表面をカーボン層Ｃ
で覆われた溶解炉１５で溶解されて保持炉１６に送られ
、保持炉１６において所定のガス圧が加えられてクルー
ジプル９に供給される。Here, the raw material for dip forming, for example, electrolytic copper 13, is preheated in a preheating furnace 14, and then its surface is coated with a carbon layer C.
The gas is melted in a melting furnace 15 covered with gas and sent to a holding furnace 16, where a predetermined gas pressure is applied, and the gas is supplied to the cruzi pull 9.
このようなディップフォーミングプロセスにおい−Ｃは
、皮むきダイアにより種線１の表面から切削された皮剥
病は、素線の生産量に対して約４％程度出るが、この屑
は一般に線状にプレスしたり、チップ状に切断するか、
あるいはこれをプレスでブリケット状に成形した後、別
の反射炉等で再溶解され、荒引線（タフピッチ）材料の
一部とじて使用されている。In such a dip-forming process, the peeling disease caused by cutting from the surface of the seed wire 1 by the peeling diamond is approximately 4% of the production amount of strands, but this scrap is generally linear. Press or cut into chips,
Alternatively, it is formed into a briquette shape using a press, then remelted in a separate reverberatory furnace, etc., and used as part of a tough pitch material.
このような従来の皮剥病の処理方法では、耐囚、輸送、
溶解等の多くの工程を必要とするため、手数を要し多額
の経費を必要とするという難点があった。Conventional treatment methods for this kind of excoriation disease are
Since it requires many steps such as melting, it is troublesome and requires a large amount of expense.
上記の再溶解法に代えて、皮剥病を撚合せて、これを連
続的に溶解炉１５中に供給する方法も提案されているが
（特開昭５５−２４３３５号公報）、このような方法で
は溶解炉１５表面が厚いカーボン層Ｃで覆われているた
め、送り込まれた切削屑が溶ＩＭ中に円滑に挿入されず
、トラブルを起こし易いという難点があった。Instead of the above-mentioned remelting method, a method has also been proposed in which the flakes are twisted and continuously fed into the melting furnace 15 (Japanese Patent Application Laid-open No. 55-24335). In this case, since the surface of the melting furnace 15 is covered with a thick carbon layer C, there is a problem in that the cutting chips sent in cannot be smoothly inserted into the molten IM, which tends to cause trouble.
［発明の目的］
本発明はかかる従来の欠点を解消ずべくなされたもので
、ディップフォーミングプロセスの皮剥工程で排出され
る皮剥病を有効かつ容易に溶解せしめて、しかも経済的
負荷を増すことなく再利用させ得るディップフォーミン
グプロセスにおける皮剥屑処理方法を提供しようとする
ものである。[Object of the Invention] The present invention has been made in order to overcome these conventional drawbacks, and is capable of effectively and easily dissolving the peeling disease discharged in the peeling step of the dip forming process, without increasing the economic burden. It is an object of the present invention to provide a method for treating peeling debris in a dip forming process that can be reused.
［発明の概要］
すなわち本発明のディップフォーミンクプロセスにおけ
る皮剥屑処理方法は、皮むきダイによって切削された皮
剥病を切断してチップ屑とし、これらのチップ屑を搬送
装置により溶融金属をるつぼ炉内へ供給する保持炉上に
送り、その上部開口部より直接投入することを特徴とし
ている。[Summary of the Invention] That is, the peeling waste treatment method in the dip-forming process of the present invention involves cutting the peeling chips cut by a peeling die into chip waste, and transporting the molten metal into a crucible furnace using a conveying device. It is characterized in that it is fed onto a holding furnace that is supplied into the interior of the holding furnace, and is directly charged from the upper opening of the holding furnace.
「発明の実施例」 以下図面によって本発明方法の一実施例を説明する。“Embodiments of the invention” An embodiment of the method of the present invention will be described below with reference to the drawings.
本発明方法においては、第１図における例えば皮むきダ
イアと保持炉１６との間に、第２図に示ずような、皮剥
病１７をチップ状に切断してチップ屑１８とするチップ
屑生成装置１９と、これらのチップ屑１８を保持炉１６
上へ送る搬送装置２０が使用される。In the method of the present invention, for example, between the peeling dia and the holding furnace 16 in FIG. 1, the peeling disease 17 is cut into chips as shown in FIG. The device 19 and these chip wastes 18 are transferred to the holding furnace 16.
An upward transport device 20 is used.
上記チップ屑生成装置１９は皮剥病１７を切断するカッ
ターローラ２１と、皮剥病１７をこのカッターローラ２
１へ送るガイドローラ２２とから構成されており、搬送
装置１ｆ２０は例えばベルトコンベアー等である。The chip waste generation device 19 includes a cutter roller 21 for cutting the peeling disease 17, and a cutter roller 21 for cutting the peeling disease 17.
The transport device 1f20 is, for example, a belt conveyor or the like.
保持炉１６は炉内を底部で連通可能な仕切壁２３で加圧
室２４と注湯室２５とに２分され、注湯室２５側面には
溶湯導入口２６および浴場Ｍをクルージプル９に供給す
る注湯口２７が開口している。また、この保持炉１６に
は図示を省略したが、溶湯温度をコントロールする加熱
装置と不活性雰囲気ガスを加圧挿入する機構が設けられ
ている。The holding furnace 16 is divided into a pressurizing chamber 24 and a pouring chamber 25 by a partition wall 23 that allows communication at the bottom of the furnace, and a molten metal inlet 26 and a bath M are provided on the side of the pouring chamber 25 to supply the cruzi pull 9. The pouring port 27 is open. Further, although not shown in the drawings, the holding furnace 16 is provided with a heating device for controlling the temperature of the molten metal and a mechanism for pressurizing and introducing an inert atmosphere gas.
−ざらに、注湯室２４の上部には直径約７０ｍｎ＋の開
口部２８が穿設されている。- Roughly speaking, an opening 28 with a diameter of about 70 mm+ is bored in the upper part of the pouring chamber 24.
しかして、本発明においては皮むきダイアから排出され
る皮剥病１７はチップ屑生成装置１９により、望ましく
は長さ５０ｍｍ以下のチップ屑１８とされ、搬送装置２
０により保持炉１６の注湯室２５側部へ送られ、開口部
２８を通しで注湯室２５内へ投入される。Therefore, in the present invention, the peeling disease 17 discharged from the peeling dia is converted into chip waste 18 preferably having a length of 50 mm or less by the chip waste generation device 19, and
0 to the side of the pouring chamber 25 of the holding furnace 16, and is introduced into the pouring chamber 25 through the opening 28.
このようにして保持炉１６中に投入されたチップ屑１８
は、溶ＩＭ中に浸漬して短時間に溶解し、溶湯Ｍととも
に再度種線上に付着されることになる。なおチップ屑の
長さ５０ｍｍ以下は溶湯中への浸漬および溶解が良好で
、投入にも問題のない大きさである。Chip scraps 18 thrown into the holding furnace 16 in this way
is immersed in the molten IM, dissolved in a short time, and is deposited on the seed wire together with the molten metal M again. Note that chips with a length of 50 mm or less can be easily immersed and dissolved in the molten metal, and are of a size that poses no problem when thrown in.
チップ屑１８溶解のために保持炉１６の加熱装置にかか
る負荷は、例えば通常の鋳造レート６ｔ／ｈｒでは、皮
剥病の発生量は約２４０ｋｇ／ｈｒで、これを溶解する
のに必要な電力は
２４０ｋｇ／ｈｒＸｏ、２ｋｗｈ ／ｋｇ＝４８ｋｗと
僅かである。For example, at a normal casting rate of 6 t/hr, the load on the heating device of the holding furnace 16 for melting the chip waste 18 is approximately 240 kg/hr, and the power required to melt this is approximately 240 kg/hr. 240kg/hrXo, 2kwh/kg=48kw, which is small.
従って、保持炉の加熱装置を僅かに出力アップ可能な装
置にすることで充分適用できる。また、皮剥病の再利用
に伴う素線の特性お−よび品質に及ぼす影響については
、以下の理由で問題がないと考えられる。Therefore, the heating device of the holding furnace can be sufficiently applied by using a device that can slightly increase the output. Furthermore, it is considered that there is no problem with the effects of reuse on the properties and quality of the wire for the following reasons.
すなわち、皮剥工程時の発熱により皮剥層の表面が幾ら
か酸化されるが、皮剥層中の酸素含有量は５０１）ｌ）
ｍ程度で、生産される素線全体としては、５０１）ｐＩ
ＩＩＸ４％（皮剥層）発生率）Ｘｏ、０１＝２ＤＤ…
の上昇に過ぎない。That is, the surface of the peeled layer is somewhat oxidized due to the heat generated during the peeling process, but the oxygen content in the peeled layer is 501)l)
m, the entire produced wire has a pI of 501)
IIX 4% (exfoliation rate) Xo, 01 = 2DD... It is only an increase.
また、皮剥層には皮むきダイ等に塗布されたダイス用潤
滑剤が付着しているが、潤滑剤に不純物を含有する鉱物
油を用いず、純植物性油または純動物性油を用いること
で純度に影響することがない。In addition, a die lubricant applied to the peeling die is attached to the peeling layer, but pure vegetable oil or pure animal oil should be used for the lubricant instead of mineral oil containing impurities. and does not affect purity.
なお上記した例では、溶解炉・保持炉分離型の場合を述
べたが、本発明は溶解炉と保持炉が一体となり、傾動に
よりるつぼ炉へ溶湯を供給するシステムについても、チ
ップ屑を溶解炉上部開口部に投入することにより適用で
きる。この場合は溶解炉側の溶湯温度が高いため、チッ
プ屑の溶解は既設の加熱装置で十分対応できる。Although the above example describes a case where the melting furnace and holding furnace are separated, the present invention also applies to a system in which the melting furnace and the holding furnace are integrated and molten metal is supplied to the crucible furnace by tilting. It can be applied by pouring it into the upper opening. In this case, since the temperature of the molten metal on the melting furnace side is high, the existing heating device can sufficiently melt the chip waste.
実施例
本発明方法を実施するにあたり、第２図に示した装置を
使用し、第１図に示したディップフォーミングプロセス
により素線を製造した。EXAMPLE In carrying out the method of the present invention, a wire was manufactured by the dip forming process shown in FIG. 1 using the apparatus shown in FIG.
まず、外径１６１ｍの種線をプルブロックにより引き出
し、矯正ローラ、矯正ダイ、さらに矯正ローラ、引き抜
きダイに通して皮むきダイに送った。First, a seed wire having an outer diameter of 161 m was pulled out using a pull block, passed through a straightening roller, a straightening die, a straightening roller, a pulling die, and then sent to a peeling die.
この皮むきダイで表面層を切削し゛Ｃ外径１２．７ｍｌ
の正常表面の種線とし、直ちに真空室に導いた。Cut the surface layer with this peeling die.C outer diameter: 12.7ml
The normal surface of the specimen was used as a seed line and immediately introduced into a vacuum chamber.
以上の工程における線速は６ｏｍ／ｍｔｎとした。The linear speed in the above steps was 6 om/mtn.
皮むきダイで排出され１＝皮剥屑をチップ屑生成装置で
長さ２０ｍｍのチップ屑に形成した後、これらを搬送装
置により保持炉上へ送り、保持炉内へその上部開口部よ
り直接投入した。投入されたチップ屑は加熱溶解し、溶
解炉から導入された溶融金属に混入し、ディップ材とし
てクルージプルに供給された。After the peeling waste discharged from the peeling die was formed into chips with a length of 20 mm using a chip waste generation device, these chips were sent onto a holding furnace using a conveying device, and were directly introduced into the holding furnace from the upper opening thereof. . The chip waste was heated and melted, mixed with the molten metal introduced from the melting furnace, and supplied to the Krujpur as a dipping material.
一方、種線は真空室を通過させた後、クルージプルでチ
ップ屑が溶解混入したディップ材にディップし１次いで
冷却室に導き外径２０．８ｎ＋ｍの素線を得た。さらに
、この素線を圧延機で熱間圧延して外径９．５ｍｍの線
材とした後件線し、外径３２ ｍｎ＋および２．６ＩＩ
Ｉｌｌの荒引線としてコイラーに巻取った。On the other hand, the seed wire was passed through a vacuum chamber, then dipped in a dipping material in which chip waste was dissolved and mixed using a cruzi pull, and then led to a cooling chamber to obtain a wire having an outer diameter of 20.8 n+m. Furthermore, this strand was hot-rolled in a rolling mill to make a wire rod with an outer diameter of 9.5 mm, and the outer diameter was 32 mm+ and 2.6 II.
It was wound onto a coiler as a rough wire for Ill.
このようにして得られた荒引線についてその特性を調べ
たところ、酸素含有量は８ ｐｐｍで無酸素銅の特性を
維持しており、伸線性も良好であった。When the properties of the rough drawn wire thus obtained were investigated, it was found that the oxygen content was 8 ppm, maintaining the properties of oxygen-free copper, and the wire drawability was also good.
また、電磁探傷器による品質チェックの結果も良好であ
った。In addition, the quality check results using an electromagnetic flaw detector were also good.
［発明の効果］
以上のように本発明によれば、皮むきダイにより切削さ
れた皮剥層は、チップ状に切断され゛Ｃ溶湯上に容易に
溶解混入するように投入されるので、従来のカーボン層
の存在による供給の難しさが解消され、無駄のない円滑
な供給が可能となる。しかも無酸素銅のディップ材とし
ての製品の特性および品質を低下させることもない。[Effects of the Invention] As described above, according to the present invention, the peeled layer cut by the peeling die is cut into chips and thrown into the molten metal so as to be easily dissolved and mixed therein. The difficulty of supply due to the presence of the carbon layer is resolved, and smooth supply without waste becomes possible. Moreover, the properties and quality of the product as a dipping material for oxygen-free copper are not deteriorated.
また、その設備は極めて簡単なもので、経済的であると
ともに、従来の計量、輸送等の手数が省略される等の利
点を有する。Furthermore, the equipment is extremely simple and economical, and has the advantage of omitting the conventional troubles of measuring, transporting, etc.
第１図は一般のディップフォーミングプロセスを概略的
に示す断面図、第２図は本発明の一実施例に使用する装
置を概略的に示す断面図である。
１・・・・・・・・・・・・種 線
２・・・・・・・・・・・・プルブロック３．５・・・
・・・矯正ローラ
４・・・・・・・・・・・・矯正ダイ
６・・・・・・・・・・・・引き抜ぎダイア・・・・・
・・・・・・・皮むきダイ８・・・・・・・・・・・・
真空室
９・・・・・・・・・・・・クルージプル１０・・・・
・・・・・・・・冷却室
１１・・・・・・・・・・・・素線
１２・・・・・・・・・・・・圧延機
１３・・・・・・・・・・・・電気銅
１４・・・・・・・・・・・・余熱炉
１５・・・・・・・・・・・・溶解炉
Ｃ・・・・・・・・・・・・カーボン層Ｍ・・・・・・
・・・・・・溶 湯
１６・・・・・・・・・・・・保持炉
１７・・・・・・・・・・・・皮剥層
１８・・・・・・・・・・・・チップ屑１９・・・・・
・・・・・・・チップ屑生成装置２０・・・・・・・・
・・・・搬送装置２１・・・・・・・・・・・・カッタ
ーローラ２２・・・・・・・・・・・・ガイドローラ２
３・・・・・・・・・・・・仕切壁
２４・・・・・・・・・・・・加圧室
２５・・・・・・・・・・・・注湯室
２６・・・・・・・・・・・・溶湯導入口２７・・・・
・・・・・・・・注湯口
２８・・・・・・・・・・・・開口部
代理人弁理士 須 山 佐 −
（ばか１名）FIG. 1 is a sectional view schematically showing a general dip forming process, and FIG. 2 is a sectional view schematically showing an apparatus used in an embodiment of the present invention. 1......Seed Line 2...Pull block 3.5...
... Straightening roller 4 ....... Straightening die 6 ...... Pulling die ...
・・・・・・Peeling die 8・・・・・・・・・・・・
Vacuum chamber 9...Cruj pull 10...
・・・・・・・・・Cooling chamber 11・・・・・・・・・Element wire 12・・・・・・・・・Rolling mill 13・・・・・・・・・・・・Electrolytic copper 14・・・・・・・・・Preheating furnace 15・・・・・・・・・Melting furnace C・・・・・・・・・Carbon layer M...
..... Molten metal 16 ..... Holding furnace 17 ..... Peeling layer 18 .....・Chip scraps 19...
......Chip waste generation device 20...
......Conveyor device 21...Cutter roller 22...Guide roller 2
3・・・・・・・・・・・・Partition wall 24・・・・・・・・・Pressure chamber 25・・・・・・・・・Pouring chamber 26・・......Molten metal inlet 27...
・・・・・・・・・Pour spout 28・・・・・・・・・・・・Opening attorney Suyama Sa - (1 idiot)
Claims (1)
解炉から保持炉を介して溶融金属が常時補給されている
るつぼ炉内を通過させて種線の外周面に溶融金属を付着
させることにより、種線よりも大径の素線を得るディッ
プフォーミングプロセスにおいて、前記皮むきダイによ
り種線の表面層を除去する際に排出される皮剥層をチッ
プ状に切断した後、このチップ屑を搬送装置により前記
溶融金属をるつぼ炉内へ供給する保持炉上べ送り、この
保持炉の上部開口部より前記チップ屑を直接投入するこ
とを特徴とするディップフォーミングプロセスにおける
皮剥屑処理方法。After the seed wire is sent to a peeling die to remove its surface layer, it is passed through a crucible furnace where molten metal is constantly supplied from the melting furnace via the holding furnace to attach molten metal to the outer peripheral surface of the seed wire. In the dip forming process to obtain a wire with a larger diameter than the seed wire, the peeling layer discharged when the surface layer of the seed wire is removed by the peeling die is cut into chips, and then the chips are A method for treating peeling chips in a dip forming process, characterized in that the chips are transported above a holding furnace for supplying the molten metal into a crucible furnace using a conveying device, and the chip chips are directly introduced from an upper opening of the holding furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58008164A JPS59136467A (en) | 1983-01-21 | 1983-01-21 | Treatment of peeled scale in dip-forming process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58008164A JPS59136467A (en) | 1983-01-21 | 1983-01-21 | Treatment of peeled scale in dip-forming process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59136467A true JPS59136467A (en) | 1984-08-06 |
Family
ID=11685688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58008164A Pending JPS59136467A (en) | 1983-01-21 | 1983-01-21 | Treatment of peeled scale in dip-forming process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59136467A (en) |
-
1983
- 1983-01-21 JP JP58008164A patent/JPS59136467A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3870511A (en) | Process for refining molten aluminum | |
| US3743263A (en) | Apparatus for refining molten aluminum | |
| US5057150A (en) | Production of aluminum master alloy rod | |
| EP0745694A1 (en) | Method and apparatus for shaping semisolid metals | |
| JP3329013B2 (en) | Continuous refining method and apparatus for Al-Si aluminum scrap | |
| CN115055654A (en) | High-carbon steel wire rod and production method thereof | |
| US2264287A (en) | Metallurgical product and method of making same | |
| CN1334155A (en) | Adhesion-resistant oxygen-free copper roughly drawn wire | |
| ES8403762A1 (en) | Process and apparatus for casting hollow steel ingots. | |
| JPS59136467A (en) | Treatment of peeled scale in dip-forming process | |
| JPH0130589B2 (en) | ||
| JP3638670B2 (en) | Method and apparatus for continuous casting into a cast shape close to the finished size | |
| JP2004066302A (en) | Manufacturing apparatus of magnesium alloy material, manufacturing method of magnesium alloy material, and magnesium alloy material | |
| US4086952A (en) | Method for producing a uniform crystal structure by continuous casting | |
| JPH06212300A (en) | Manufacture of low oxygen copper containing p by using shaft furnace | |
| RU2688103C1 (en) | Method of continuous cast copper billet manufacturing for electrotechnical purposes and technological complex for its implementation | |
| JPS58130230A (en) | Physical separation of metal phase and slag by induction furnace | |
| JPS6114909B2 (en) | ||
| RU2764885C2 (en) | Grinding of metal grains using direct oscillation energy transmission in production of cast metal workpieces | |
| JPS58154450A (en) | Method and installation for producing alloyed copper wire | |
| US3145842A (en) | Process for the extrusion of fine wire | |
| RU2114928C1 (en) | Method of niobium refining | |
| RU2089334C1 (en) | Method of combined continuous casting and rolling of copper and its alloys | |
| JPS63286561A (en) | Production of heat resistant copper alloy wire rod | |
| EP0264418A1 (en) | Continuous production of alloys. |