JPS59127339A - Circuit breaking element - Google Patents

Circuit breaking element

Info

Publication number
JPS59127339A
JPS59127339A JP23436282A JP23436282A JPS59127339A JP S59127339 A JPS59127339 A JP S59127339A JP 23436282 A JP23436282 A JP 23436282A JP 23436282 A JP23436282 A JP 23436282A JP S59127339 A JPS59127339 A JP S59127339A
Authority
JP
Japan
Prior art keywords
layer
circuit breaking
metal
circuit
breaking element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23436282A
Other languages
Japanese (ja)
Other versions
JPH0230135B2 (en
Inventor
笠松 幹三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HONGOU MANZOU
Original Assignee
HONGOU MANZOU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HONGOU MANZOU filed Critical HONGOU MANZOU
Priority to JP23436282A priority Critical patent/JPH0230135B2/en
Priority to US06/584,934 priority patent/US4540970A/en
Publication of JPS59127339A publication Critical patent/JPS59127339A/en
Publication of JPH0230135B2 publication Critical patent/JPH0230135B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 不発明は、回路・庶i所用素子に関し、さらに詳しくは
、電気嘘器頚の電気流路に配設されるヒユーズ可溶体、
ヒユーズ抵抗器等に使用される超小型の111)!谷a
 l’llT月1素子月数素子関する。
[Detailed Description of the Invention] The invention relates to circuits and other necessary elements, and more specifically, to a fusible fuse disposed in an electric flow path of an electric device neck,
Ultra-compact 111) used in fuse resistors, etc. valley a
l'llT month 1 element month number element related.

従来、この種の回路遮断用素子は、セラミック等の電気
絶縁性基材の表面に、メッキ或は蒸着等の手段により銅
、銅合金、ぞの池の金属抵抗皮膜を直接層成して構成さ
れているか、どの場合、該素子に過電流が流れて金属抵
抗皮膜が溶融されても、回路の遮断は不完全であって安
全性に欠ける重大な問題がある。
Conventionally, this type of circuit breaker element has been constructed by directly layering a metal resistance film of copper, copper alloy, or chlorine on the surface of an electrically insulating base material such as ceramic by plating or vapor deposition. In any case, even if an overcurrent flows through the element and melts the metal resistance film, the circuit will be incompletely interrupted, resulting in a serious problem of lack of safety.

その理由は、メッキ或は蒸着等の手段により層成された
金属抵抗皮膜は膜厚が薄く、且つ電気絶縁性基材の表面
に直接に設けられているためてあって、このような条件
下では、余興皮膜が過′亀流により溶融してもその溶融
間隔は極く僅かであって、必ず残留抵抗があり(500
Vメカ−で測定した場合)、したかって電流の遮断は不
完全で、回路遮断用素子の重要な機能である溶断による
回路の完全な遮断は不可能であり、この場合の溶断電流
値と溶断時間波ひに絶縁抵抗との関係をlS断試験に基
いて示せば表−1の通りである。
The reason for this is that the metal resistance film formed by plating or vapor deposition is thin and is provided directly on the surface of the electrically insulating base material, so it cannot be used under such conditions. In this case, even if the entertainment film melts due to excessive flow, the interval between melts is extremely small, and there is always residual resistance (500
Therefore, the interruption of the current is incomplete, and it is impossible to completely interrupt the circuit by fusing, which is an important function of the circuit breaking element. Table 1 shows the relationship between insulation resistance and time wave resistance based on the IS disconnection test.

表   −1 1 ’   0.706  I  O,3j: 1 1   0576 1  06    ′□ 0.340  :0.5   i 8A    、     4.31   [o、o11
′1         1          :1 
 0−81 1   o3: □ 上表より明かなように、基材の表面に直接に金属抵抗皮
膜を層成した回路遮断用素子の場合は、金属皮膜の溶断
時における絶縁抵抗か小さく、残留抵抗が大であること
が判る。
Table -1 1 ' 0.706 I O,3j: 1 1 0576 1 06 '□ 0.340 :0.5 i 8A , 4.31 [o, o11
'1 1:1
0-81 1 o3: □ As is clear from the above table, in the case of a circuit breaking element in which a metal resistance film is directly layered on the surface of the base material, the insulation resistance when the metal film is fused is small, and the residual resistance is low. is found to be large.

不発明は、上記の欠点を除去することを目的として種々
研究の結果完成されたもので、電気絶縁性基材の表面に
低融点の有機絶縁材層が形成され、該絶縁材層の表面に
金屑抵抗皮膜層が形成されていることを特徴と、する回
路遮断用素子に係るものである。
The invention was completed as a result of various research aimed at eliminating the above-mentioned drawbacks.A low melting point organic insulating material layer is formed on the surface of an electrically insulating base material, and the surface of the insulating material layer is The present invention relates to a circuit breaking element characterized in that a metal scrap resistive film layer is formed.

以下に、本発明の一実施例を添付図面に基いて説明すれ
ば、第1図に3いて、■はセラミックから成る超小型の
円柱状の電気絶縁性基材であって、その表面にウレタン
樹脂より成る低融点の何機絶縁材層2を被覆形成した後
、さらに該層2の表面に銅より成る薄い金屑抵抗皮膜層
3をメッキ手段または蒸着手段により被覆形成して、超
小型の回路遮断用素子4を構成したものであり、この素
子40両端にリード線5を夫々備えた電導性キャップ6
を夫々被嵌固着して超小型のヒユーズを構成したもので
ある。
An embodiment of the present invention will be described below with reference to the accompanying drawings. After forming a low-melting point insulating material layer 2 made of resin, a thin metal scrap resistance film 3 made of copper is further formed on the surface of the layer 2 by plating or vapor deposition to form an ultra-small A conductive cap 6 comprising a circuit breaking element 4 and having lead wires 5 at both ends of the element 40.
are fitted and fixed to each other to form an ultra-compact fuse.

而し玄上記のように構[戊した回路−Jg断用素子によ
れば、次の経過番こしたがって回路を完全に誰断するも
のである(′第2図の(イ)、(ロ)、?→参照)。
However, according to the circuit constructed as described above, and the Jg disconnection element, the circuit is completely disconnected at the next elapsed time ((a) and (b) in Figure 2). , ? → see).

(1)先ず、過電流が流れることにより金属抵抗皮膜層
3か発熱し、次第(こ温度上昇する。
(1) First, the metal resistance film layer 3 generates heat due to the flow of an overcurrent, and the temperature gradually rises.

(2)  金屑抵抗皮膜層3の上昇温度が、その下層に
ある低融〔景の何機14色縁材層2の溶融温度に達する
と、第2 pxjの(イ)に示すように該層か溶融を開
始して溶融)Aμaを生じる。
(2) When the rising temperature of the metal scrap resistance film layer 3 reaches the melting temperature of the lower-layer low-melting edge material layer 2, as shown in (a) of the second pxj, the temperature increases. The layer begins to melt, resulting in molten Aμa.

(3)  有(幾絶仔桐層2の溶融部aの溶融か更に進
行して、第2図の(ロ)に示すように稜部か完全な溶断
部1)を形成すると、稜部から金属抵抗皮膜3か浴融し
始めるか、その時点において金属抵抗皮膜層3は該溶断
813bの個所てブリッジCの状・庫になっている。
(3) When the melting of the molten part a of the paulownia layer 2 progresses further and forms a ridge or a complete fused part 1 as shown in FIG. When the metal resistance film 3 starts to melt in the bath, the metal resistance film layer 3 assumes the shape of a bridge C at the melting point 813b.

(4)  さらに温度が上昇して金屑抵抗皮膜層層3の
溶融が進行すると、遂にはそのブ’J yジCの部分で
該皮膜層は溶断されて完全に両側に分離され、第2図の
(ハ)に示すように完全願耐部dを形成する。
(4) When the temperature further rises and the melting of the metal scrap resistance coating layer 3 progresses, the coating layer is finally fused at the part of the bushing C and completely separated into both sides, and the second As shown in (c) of the figure, a completely durable part d is formed.

上記のように、過電流番こより回路を完全に4断てきる
ように構成された本発明の実施例で示す素子に旧ける、
溶断電流値と溶断時間並ひに詑1縁抵抗との関係を溶断
試験に基いて示せば表−2の通りである。
As mentioned above, the element shown in the embodiment of the present invention, which is configured to completely cut off the circuit by the overcurrent switch,
Table 2 shows the relationship between the fusing current value, the fusing time, and the shingle edge resistance based on the fusing test.

表   −2 111 11301 ( i i    1/        5.4    。Table-2 111 11301 ( i i 1/ 5.4.

1 、        39.4    :   1o、o
1, 39.4: 1o, o
.

上表より明かなように、本発明の実施例で示した回路遮
断用素子の場合は、金属皮膜の溶断時に8ける絶縁抵抗
が大きくて残留抵抗が無く、回路の遮断が完全に行われ
ていることが判る。
As is clear from the above table, in the case of the circuit breaking element shown in the example of the present invention, the insulation resistance of 8 is large and there is no residual resistance when the metal film is fused, and the circuit is completely broken. I know that there is.

なお、本発明で使用する電気絶縁性基材、低融点の有機
絶縁材及び金属抵抗皮膜材は上記実施例に限定されるも
のではなく、それ以外に例えは次のものを使用できる。
Note that the electrically insulating base material, low melting point organic insulating material, and metal resistance coating material used in the present invention are not limited to the above examples, and the following examples can be used in addition to them.

電気絶縁性基材:エポキシ樹脂、フェノール樹脂、ポリ
アミド樹脂、琺瑯その池 低融点有機絶縁材、ポリエステル系樹脂、マイトン樹脂
、エポキシ樹脂その他 金属抵抗皮膜材1銅マンガン合金、銅ニツケル合金等の
各種銅合金、銀、金その 他 さらにまた、金属抵抗皮膜及び低融点有機絶縁材の被覆
状態は、全面被覆、部分岐覆の両FJi賭聾様か必要に
応じて適宜に選択採用できるものてあり、また、基4.
Hの形状としては、柱状、板状、チップ状、円筒状等が
挙げられる。
Electrically insulating base materials: Epoxy resin, phenol resin, polyamide resin, enamel resin, low melting point organic insulating material, polyester resin, miton resin, epoxy resin, and other metal resistance coating materials 1 Various types of copper such as copper manganese alloy, copper nickel alloy, etc. Alloy, silver, gold, etc.Furthermore, the coating state of the metal resistance film and low melting point organic insulating material can be selected and adopted as necessary, whether it is full coverage or partial coverage. , group 4.
Examples of the shape of H include columnar, plate-like, chip-like, and cylindrical shapes.

以上詳述したように、本発明に係る回路推断用素子によ
れは、電気絶縁性基材と金属抵抗皮膜材との間に低融点
41機絶縁材を介在させた偶成により、前述したように
、金属抵抗皮膜層をブリッジ状態の部分で溶j斤できる
ので、溶断された皮膜層を完全に両側に分離して回路の
完全遮断を図り得るものであり、1山路I N、7F用
素子として確実性、安全件、信頼性を著しく向」−でき
るものである。
As detailed above, the circuit breaking element according to the present invention suffers from warping due to the combination of the low melting point 41 insulating material interposed between the electrically insulating base material and the metal resistance coating material. Since the metal resistance film layer can be melted in the bridge state, it is possible to completely separate the melted film layer to both sides and completely interrupt the circuit. It can significantly improve reliability, safety, and reliability.

4、 FKI u’ri )m’j Ill f、1 
説明図面は不発明の実施例を示すもので、第1tg+は
ヒユーズに適用した場合の要部縦断正面図、vJ2硼の
(イ)、(口〕、(ハ)は溶断の経過状態の説明図であ
る。
4, FKI u'ri) m'j Ill f, 1
The explanatory drawings show an embodiment of the invention, and 1st tg+ is a longitudinal sectional front view of the main part when applied to a fuse, and (a), (mouth), and (c) of vJ2 are explanatory diagrams of the progress of fusing. It is.

1 電気絶縁性基オ、2・低融点の有機絶縁側層、3 
金属抵抗皮膜層。
1 electrically insulating group, 2. low melting point organic insulating side layer, 3
Metal resistance film layer.

Claims (1)

【特許請求の範囲】[Claims] ″電気絶縁性基材の表面に低融点の有1幾絶縁材層が形
成され、該絶碌材層の表面に金属抵抗皮膜層か形成され
ていることを特徴とする回路庶断用素)。
``Circuit breaking element characterized in that a layer of an insulating material having a low melting point is formed on the surface of an electrically insulating base material, and a metal resistance film layer is formed on the surface of the insulating material layer.'' .
JP23436282A 1982-12-29 1982-12-29 KAIROSHADANYOSOSHI Expired - Lifetime JPH0230135B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP23436282A JPH0230135B2 (en) 1982-12-29 1982-12-29 KAIROSHADANYOSOSHI
US06/584,934 US4540970A (en) 1982-12-29 1984-02-29 Circuit breaking element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23436282A JPH0230135B2 (en) 1982-12-29 1982-12-29 KAIROSHADANYOSOSHI

Publications (2)

Publication Number Publication Date
JPS59127339A true JPS59127339A (en) 1984-07-23
JPH0230135B2 JPH0230135B2 (en) 1990-07-04

Family

ID=16969811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23436282A Expired - Lifetime JPH0230135B2 (en) 1982-12-29 1982-12-29 KAIROSHADANYOSOSHI

Country Status (1)

Country Link
JP (1) JPH0230135B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7753994B2 (en) 2004-01-13 2010-07-13 Daikin Industries, Ltd. Discharge device and air purifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7753994B2 (en) 2004-01-13 2010-07-13 Daikin Industries, Ltd. Discharge device and air purifier

Also Published As

Publication number Publication date
JPH0230135B2 (en) 1990-07-04

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