JPH0230135B2 - KAIROSHADANYOSOSHI - Google Patents
KAIROSHADANYOSOSHIInfo
- Publication number
- JPH0230135B2 JPH0230135B2 JP23436282A JP23436282A JPH0230135B2 JP H0230135 B2 JPH0230135 B2 JP H0230135B2 JP 23436282 A JP23436282 A JP 23436282A JP 23436282 A JP23436282 A JP 23436282A JP H0230135 B2 JPH0230135 B2 JP H0230135B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal resistance
- circuit
- insulating material
- resistance film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Landscapes
- Fuses (AREA)
Description
本発明は、回路遮断用素子に関し、さらに詳し
くは、電気機器類の電気流路に配設されるヒユー
ズ可溶体、ヒユーズ抵抗器等に使用される超小型
の回路遮断用素子の改良に関する。
従来、この種の回路遮断用素子は、セラミツク
等の電気絶縁性基材の表面に、メツキ或は蒸着等
の手段により銅、銅合金、その他の金属抵抗皮膜
を直接層成して構成されているが、この場合、該
素子に過電流が流れて金属抵抗皮膜が溶融されて
も、回路の遮断は不完全であつて安全性に欠ける
重大な問題がある。
その理由は、メツキ或は蒸着等の手段により層
成された金属抵抗皮膜の膜厚は薄く、且つ電気絶
縁性基材の表面に直接に設けられているためであ
つて、このような条件下では、金属皮膜が過電流
により溶融してもその溶融間隔は極く僅かであつ
て、必ず残留抵抗があり(500Vメガーで測定し
た場合)、したがつて電流の遮断は不完全で、回
路遮断用素子の重要な機能である溶断による回路
の完全な遮断は不可能であり、この場合の溶断電
流値と溶断時間並びに絶縁抵抗との関係を溶断試
験に基いて示せば表−1の通りである。
The present invention relates to circuit breaking elements, and more particularly to improvements in ultra-small circuit breaking elements used in fuse fusible bodies, fuse resistors, etc. disposed in electrical flow paths of electrical equipment. Conventionally, this type of circuit breaker element has been constructed by directly layering a copper, copper alloy, or other metal resistance film on the surface of an electrically insulating base material such as ceramic by plating or vapor deposition. However, in this case, even if an overcurrent flows through the element and the metal resistance film is melted, the circuit is incompletely interrupted and there is a serious problem of lack of safety. The reason for this is that the metal resistance film formed by plating or vapor deposition is thin and is provided directly on the surface of the electrically insulating base material, and under such conditions In this case, even if the metal film melts due to overcurrent, the interval between melts is extremely short, and there is always residual resistance (when measured with a 500V megger), so the current interruption is incomplete and the circuit is interrupted. It is impossible to completely interrupt the circuit due to fusing, which is an important function of the device, and the relationship between the fusing current value, fusing time, and insulation resistance in this case is shown in Table 1 based on the fusing test. be.
【表】【table】
【表】
上表より明かなように、基材の表面に直接に金
属抵抗皮膜を層成した回路遮断用素子の場合は、
金属皮膜の溶断時における絶縁抵抗が小さく、残
留抵抗が大であることが判る。
また、この種の回路遮断用素子として、例え
ば、(1)特開昭54−11463号公報、(2)特公昭47−
41132号公報、(3)実公昭45−4441号公報等に記載
されたものが知られているが、上記(1)の公報に記
載されたものは、絶縁基体上に形成された抵抗皮
膜の1部を他部より薄くすることによつて回路を
遮断し易く構成したヒユーズ抵抗器であり、上記
(2)及び(3)の公報に記載されたものは、いづれも絶
縁基体の熱による変形力により金属膜を変形切断
するものであるから、金属膜の切断が不完全であ
つて切断しない部分を生じ易く、したがつて回路
遮断上の高度の確実性、安全性がなお不十分であ
るという問題がある。
本発明は、上記の欠点を除去することを目的と
して種々研究の結果完成されたもので、電気絶縁
性基材の表面に低融点の有機絶縁材層が形成さ
れ、該絶縁材層の表面に金属抵抗皮膜層が形成さ
れた回路遮断用素子であつて、過電流による上記
金属抵抗皮膜層の発熱により上記低融点の有機絶
縁材層を溶断し、該溶断部を介してブリツジ状態
にある金属抵抗皮膜層を両側に溶断分離するよう
に構成したことを特徴とする回路遮断用素子に係
るものである。
以下に、本発明の一実施例を添付図面に基いて
説明すれば、第1図において、1はセラミツクか
ら成る超小型の円柱状の電気絶縁性基材であつ
て、その表面にウレタン樹脂より成る低融点の有
機絶縁材層2を被覆形成した後、さらに該層2の
表面に銅より成る薄い金属抵抗皮膜層3をメツキ
手段または蒸着手段により被覆形成して、超小型
の回路遮断用素子4を構成したものであり、この
素子4の両端にリード線5を夫々備えた電導性キ
ヤツプ6を夫々被嵌固着して超小型のヒユーズを
構成したものである。
而して、上記のように構成した回路遮断用素子
によれば、次の経過にしたがつて回路を完全に遮
断するものである(第2図のイ,ロ,ハ参照)。
(1) 先ず、過電流が流れることにより金属抵抗皮
膜層3が発熱し、次第に温度上昇する。
(2) 金属抵抗皮膜層3の上昇温度が、その下層に
ある低融点の有機絶縁材層2の溶融温度に達す
ると、第2図のイに示すように該層が溶融を開
始して溶融部aを生じる。
(3) 有機絶縁材層2の溶融部aの溶融が更に進行
して、第2図のロに示すように該部が完全な溶
断部bを形成すると、該部から金属抵抗皮膜3
が溶融し始めるが、その時点において金属抵抗
皮膜層3は該溶断部bの個所でブリツジcの状
態になつている。
(4) さらに温度が上昇して金属抵抗皮膜層3の溶
融が進行すると、遂にはそのブリツジcの部分
で該皮膜層は溶断されて完全に両側に分離さ
れ、第2図のハに示すように完全遮断部dを形
成する。
上記のように、過電流により回路を完全に遮断
できるように構成された本発明の実施例で示す素
子における、溶断電流値と溶断時間並びに絶縁抵
抗との関係を溶断試験に基いて示せば表−2の通
りである。[Table] As is clear from the table above, in the case of circuit-breaking elements that have a metal resistance film layered directly on the surface of the base material,
It can be seen that the insulation resistance at the time of melting of the metal film is small and the residual resistance is large. In addition, as this type of circuit interrupting element, for example, (1) Japanese Patent Application Laid-open No. 11463/1983, (2) Japanese Patent Publication No. 1983-11463,
41132, (3) Utility Model Publication No. 45-4441, etc. are known, but the method described in the above (1) publication is based on a resistive film formed on an insulating substrate. It is a fuse resistor that has one part thinner than the other part to make it easier to break the circuit.
The methods described in the publications (2) and (3) both deform and cut the metal film by the heat-induced deformation force of the insulating substrate, so the metal film is incompletely cut and there are parts that are not cut. Therefore, there is a problem that a high degree of reliability and safety in circuit interruption are still insufficient. The present invention was completed as a result of various studies aimed at eliminating the above-mentioned drawbacks, and consists of forming a low-melting-point organic insulating material layer on the surface of an electrically insulating base material, and forming a layer of an organic insulating material on the surface of the insulating material layer. A circuit breaking element on which a metal resistance film layer is formed, in which the low melting point organic insulating material layer is fused due to heat generated by the metal resistance film layer due to overcurrent, and the metal in a bridge state is melted through the fusion part. The present invention relates to a circuit breaking element characterized in that a resistive film layer is configured to be fused and separated on both sides. An embodiment of the present invention will be described below with reference to the accompanying drawings. In FIG. 1, reference numeral 1 denotes an ultra-small cylindrical electrically insulating base material made of ceramic, the surface of which is coated with urethane resin. After coating the layer 2 with a low melting point organic insulating material layer 2, a thin metal resistance film layer 3 made of copper is further coated on the surface of the layer 2 by plating or vapor deposition to obtain an ultra-small circuit breaker element. 4, and a conductive cap 6 having lead wires 5 at both ends of the element 4 is fitted and fixed to form an ultra-small fuse. According to the circuit interrupting element configured as described above, the circuit is completely interrupted according to the following steps (see A, B, and C in FIG. 2). (1) First, the metal resistance film layer 3 generates heat due to the flow of an overcurrent, and the temperature gradually rises. (2) When the rising temperature of the metal resistance film layer 3 reaches the melting temperature of the low-melting-point organic insulating material layer 2 below it, the layer starts to melt as shown in Fig. 2A. Produce part a. (3) When the melting of the molten part a of the organic insulating material layer 2 further progresses and the part forms a completely fused part b as shown in FIG.
begins to melt, but at that point the metal resistance coating layer 3 is in the state of a bridge c at the melted portion b. (4) As the temperature further increases and the melting of the metal resistance film layer 3 progresses, the film layer is finally fused at the bridge c and completely separated into both sides, as shown in Figure 2 C. A complete cut-off part d is formed at. As mentioned above, the relationship between the fusing current value, the fusing time, and the insulation resistance of the element shown in the embodiment of the present invention, which is configured to completely interrupt the circuit due to overcurrent, is shown based on the fusing test. -2.
【表】【table】
【表】
上表より明かなように、本発明の実施例で示し
た回路遮断用素子の場合は、金属皮膜の溶断時に
おける絶縁抵抗が大きくて残留抵抗が無く、回路
の遮断が完全に行われていることが判る。
なお、本発明で使用する電気絶縁性基材、低融
点の有機絶縁材及び金属抵抗皮膜材は上記実施例
に限定されるものではなく、それ以外に例えば次
のものを使用できる。
電気絶縁性基材;エポキシ樹脂、フエノール樹
脂、ポリアミド樹脂、琺瑯その他
低融点有機絶縁材;ポリエステル系樹脂、エポキ
シ樹脂その他
金属抵抗皮膜材;銅マンガン合金、銅ニツケル合
金等の各種銅合金、銀、金その他
さらにまた、金属抵抗皮膜及び低融点有機絶縁
材の被覆状態は、全面被覆、部分被覆の両被覆態
様が必要に応じて適宜に選択採用できるものであ
り、また、基材の形状としては、柱状、板状、チ
ツプ状、円筒状等が挙げられる。
以上詳述したように、本発明に係る回路遮断用
素子によれば、電気絶縁性基材と金属抵抗皮膜材
との間に低融点有機絶縁材を介在させた構成によ
り、前述したように、金属抵抗皮膜層をブリツジ
状態の部分で溶断できるので、溶断された皮膜層
を完全に両側に分離して回路の完全遮断を図り得
るものであり、既述した各種タイプの公知ヒユー
ズと比較して、回路遮断用素子としての確実性、
安全性、信頼性を著しく向上できるものである。[Table] As is clear from the above table, in the case of the circuit breaking element shown in the example of the present invention, the insulation resistance is large when the metal film is fused, there is no residual resistance, and the circuit is completely broken. I can see that it is true. Note that the electrically insulating base material, low-melting point organic insulating material, and metal resistance coating material used in the present invention are not limited to the above-mentioned examples, and in addition to these, the following can be used, for example. Electrically insulating base materials; epoxy resins, phenolic resins, polyamide resins, enamel, and other low-melting point organic insulating materials; polyester resins, epoxy resins, and other metal resistance coating materials; various copper alloys such as copper-manganese alloys and copper-nickel alloys, silver, Gold, etc.Furthermore, the coating state of the metal resistance film and the low melting point organic insulating material can be either full coverage or partial coverage as appropriate, and the shape of the base material can be selected as appropriate. , columnar, plate-like, chip-like, cylindrical, etc. As described in detail above, according to the circuit interrupting element according to the present invention, due to the structure in which the low melting point organic insulating material is interposed between the electrically insulating base material and the metal resistance coating material, as described above, Since the metal resistance film layer can be fused at the bridged portion, the fused film layer can be completely separated on both sides to completely interrupt the circuit, and compared to the various types of known fuses mentioned above, , reliability as a circuit breaking element,
This can significantly improve safety and reliability.
図面は本発明の実施例を示すもので、第1図は
ヒユーズに適用した場合の要部縦断正面図、第2
図のイ,ロ,ハは溶断の経過状態の説明図であ
る。
1……電気絶縁性基材、2……低融点の有機絶
縁材層、3……金属抵抗皮膜層。
The drawings show an embodiment of the present invention, and FIG. 1 is a longitudinal sectional front view of the main part when applied to a fuse, and FIG.
Figures A, B, and C are explanatory diagrams of the progress of fusing. DESCRIPTION OF SYMBOLS 1...Electrical insulating base material, 2...Low melting point organic insulating material layer, 3...Metal resistance film layer.
Claims (1)
層が形成され、該絶縁材層の表面に金属抵抗皮膜
層が形成された回路遮断用素子であつて、過電流
による上記金属抵抗皮膜層の発熱により上記低融
点の有機絶縁材層を溶断し、該溶断部を介してブ
リツジ状態にある金属抵抗皮膜層を両側に溶断分
離するように構成したことを特徴とする回路遮断
用素子。1. A circuit breaking element in which a low melting point organic insulating material layer is formed on the surface of an electrically insulating base material, and a metal resistance film layer is formed on the surface of the insulating material layer, wherein the metal resistance film is caused by an overcurrent. A circuit breaking element characterized in that the low melting point organic insulating material layer is fused by heat generated by the layer, and the metal resistance film layer in a bridge state is fused and separated on both sides via the fused portion.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23436282A JPH0230135B2 (en) | 1982-12-29 | 1982-12-29 | KAIROSHADANYOSOSHI |
US06/584,934 US4540970A (en) | 1982-12-29 | 1984-02-29 | Circuit breaking element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23436282A JPH0230135B2 (en) | 1982-12-29 | 1982-12-29 | KAIROSHADANYOSOSHI |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59127339A JPS59127339A (en) | 1984-07-23 |
JPH0230135B2 true JPH0230135B2 (en) | 1990-07-04 |
Family
ID=16969811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23436282A Expired - Lifetime JPH0230135B2 (en) | 1982-12-29 | 1982-12-29 | KAIROSHADANYOSOSHI |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0230135B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7753994B2 (en) | 2004-01-13 | 2010-07-13 | Daikin Industries, Ltd. | Discharge device and air purifier |
-
1982
- 1982-12-29 JP JP23436282A patent/JPH0230135B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS59127339A (en) | 1984-07-23 |
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