JP2799996B2 - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JP2799996B2 JP2799996B2 JP1229724A JP22972489A JP2799996B2 JP 2799996 B2 JP2799996 B2 JP 2799996B2 JP 1229724 A JP1229724 A JP 1229724A JP 22972489 A JP22972489 A JP 22972489A JP 2799996 B2 JP2799996 B2 JP 2799996B2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- fusible alloy
- point fusible
- low melting
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 <産業上の利用分野> 本発明は低融点可溶合金を用いた温度センサーに関す
るものである。Description: TECHNICAL FIELD The present invention relates to a temperature sensor using a low melting point fusible alloy.
<従来の技術> 従来、低融点可溶合金を用いた温度センサーにおいて
は、低融点可溶合金の融点を利用している。<Prior Art> Conventionally, in a temperature sensor using a low melting point fusible alloy, the melting point of the low melting point fusible alloy is used.
<解決しようとする課題> 而るに、合金の融点は、金属の配合割合によって変化
するが、固相線温度と液相線温度との差が余り大きくな
ると、固溶体の状態となる温度巾が広くなって、センサ
ーとしての作動性が著しく低下する。従って、合金の融
点に依存するのみでは設定できる温度に自ずから限界が
ある。<Problem to be Solved> Thus, the melting point of the alloy changes depending on the compounding ratio of the metal. However, if the difference between the solidus temperature and the liquidus temperature becomes too large, the temperature range in which a solid solution is formed becomes large. As a result, the operability as a sensor is significantly reduced. Therefore, there is a natural limit to the temperature that can be set only by depending on the melting point of the alloy.
また、従来の低融点可溶合金を用いた温度センサーに
おいては、線状エレメントを溶断させるオフ作動を利用
している。しかし、低融点可溶合金線は機械的強度が低
く、振動等で切断され易いために振動が激しい機器等で
の使用には問題がある。Further, in a conventional temperature sensor using a low melting point fusible alloy, an off operation for fusing the linear element is used. However, since the low melting point fusible alloy wire has low mechanical strength and is easily cut by vibration or the like, there is a problem in use in a device or the like where vibration is severe.
本発明に係る低融点可溶合金を用いた温度センサー
は、かかる点に鑑み、溶融金属の表面張力による盛り上
がりによりスイッチのオン作動を行なわしめるようして
設定温度領域の拡大を可能としたものである。In view of the above, the temperature sensor using the low melting point fusible alloy according to the present invention enables the switch to be turned on by the swelling due to the surface tension of the molten metal, thereby enabling an expansion of the set temperature range. is there.
<課題を解決するための手段> 本発明に係る温度センサーは、低融点可溶合金片が溶
融し、その溶融金属の表面張力による盛り上がりにより
スイッチのオン作動を行うことを特徴とする構成であ
り、低融点可溶合金片には結晶変態または再結晶により
変形するものを使用することができる。<Means for Solving the Problems> A temperature sensor according to the present invention is characterized in that a low melting point fusible alloy piece is melted and a switch is turned on by a swelling due to the surface tension of the molten metal. As the low melting point fusible alloy pieces, those which are deformed by crystal transformation or recrystallization can be used.
<実施例の説明> 以下、図面により実施例を説明する。<Description of Example> Hereinafter, an example will be described with reference to the drawings.
第1図A並びに第1図B(第1図Aにおけるb−b断
面図)において、1は絶縁基板、例えば、セラミックス
板である。2は基板上に設けた膜抵抗体、3・3は膜電
極、4・4は各電極3・3に接続したリード導体であ
る。5は膜電極であり、円形の第一電極51を有し、該第
一電極51を膜抵抗体2の近傍の配してある。6は第一電
極51上に設けた低融点可溶合金片であり、裏面の一部の
みを第一電極51に接触固着してある。71は膜電極5に接
続したリード導体である。72は他の膜電極50に固定した
他のリード導体であり、その先端部を第二電極52とし、
該第二電極52と低融点可溶合金片6との間に所定の間隔
を隔ててある。8はフラックスであり、第一電極51、低
融点可溶合金片6並びに第二電極52を包囲している。9
は絶縁基板1上に被覆した耐熱性絶縁層(例えば、エポ
キシ樹脂モールド層)である。1A and 1B (a cross-sectional view taken along the line bb in FIG. 1A), reference numeral 1 denotes an insulating substrate, for example, a ceramic plate. Reference numeral 2 denotes a film resistor provided on the substrate, 3.3 denotes a film electrode, and 4 and 4 denote lead conductors connected to the electrodes 3.3. Reference numeral 5 denotes a membrane electrode having a circular first electrode 51, which is arranged near the membrane resistor 2. Reference numeral 6 denotes a low-melting-point fusible alloy piece provided on the first electrode 51, and only a part of the back surface is fixed to the first electrode 51 by contact. Reference numeral 71 denotes a lead conductor connected to the membrane electrode 5. 72 is another lead conductor fixed to another membrane electrode 50, the tip of which is the second electrode 52,
A predetermined distance is provided between the second electrode 52 and the low melting point fusible alloy piece 6. A flux 8 surrounds the first electrode 51, the low-melting-point fusible alloy piece 6, and the second electrode 52. 9
Is a heat-resistant insulating layer (for example, an epoxy resin mold layer) coated on the insulating substrate 1.
使用にあたっては、膜抵抗体2を電気機器に直列また
は並列に接続し、第一電極51のリード導体71と第二電極
52のリード導体72とを継電回路に接続する。従って、電
気機器の通電に伴い膜抵抗体2も通電され、膜抵抗体2
が発熱すると、膜抵抗体近傍の低融点可溶合金片6が加
熱される。上記低融点可溶合金片の結晶変化温度をT3℃
とすると、電気機器に所定の負荷電流例えば、平均負荷
電流値が流れたときに膜抵抗体2の発熱温度がT3℃とな
るように抵抗値を調整する。従って、電気機器のヒート
サイクル中、平均負荷電流値以上の電流が流れれば、低
融点可溶合金片6が変形し(角が丸くなり盛り上ってい
く)、かかる変形が累積され、平均負荷電流値以上の電
流が流れる回数が多いほど盛り上りが大となる。In use, the film resistor 2 is connected in series or in parallel to the electrical equipment, and the lead conductor 71 of the first electrode 51 and the second electrode
The 52 lead conductors 72 are connected to the relay circuit. Therefore, the membrane resistor 2 is also energized with the energization of the electric device, and the membrane resistor 2 is turned on.
Generates heat, the low melting point fusible alloy piece 6 near the film resistor is heated. The crystal change temperature of the low melting point fusible alloy piece is T 3 ° C
Then, when a predetermined load current, for example, an average load current value flows through the electric device, the resistance value is adjusted such that the heat generation temperature of the membrane resistor 2 becomes T 3 ° C. Therefore, if a current equal to or more than the average load current value flows during the heat cycle of the electric device, the low melting point fusible alloy piece 6 is deformed (rounded corners and rises), and such deformations are accumulated and averaged. The larger the number of times the current equal to or greater than the load current value flows, the greater the climax.
上記スイッチは保護すべき電気機器に装着してあり、
低融点可溶合金片6が電気機器の発熱温度と等しい温度
に加熱される。また、低融点可溶合金片6の融点を電気
機器の許容温度に設定してある。而して、電気機器に過
電流が流れ、当該機器が発熱して許容温度に達すると、
低融点可溶合金片6が溶融し、その溶融金属の表面張力
のために第一電極51を受皿として当該溶融金属が盛り上
っていき、第1電極51と第二電極とが導通し、継電回路
の作動により機器への通電が遮断される。而るに、機器
に過電流が流れる以前に、すなわち、低融点可溶合金片
6の溶融前に、機器への平均負荷電流以上の通電回数が
多いほど、溶融前の低融点可溶合金片6の結晶変化に基
づく盛り上りを多きくできるから、溶融した低融点可溶
合金の表面張力に起因する盛り上りに基づく第一電極51
と第二電極52との接触を迅速に行なわしめ得る。The switch is attached to the electrical equipment to be protected,
The low melting point fusible alloy piece 6 is heated to a temperature equal to the heat generation temperature of the electric device. Further, the melting point of the low melting point fusible alloy piece 6 is set to the allowable temperature of the electric equipment. Thus, when an overcurrent flows in the electric device and the device generates heat and reaches an allowable temperature,
The low melting point fusible alloy piece 6 is melted, the molten metal swells with the first electrode 51 as a saucer due to the surface tension of the molten metal, and the first electrode 51 and the second electrode conduct, The operation of the relay circuit cuts off power to the device. Therefore, before the overcurrent flows through the device, that is, before the melting of the low-melting-point fusible alloy piece 6, the larger the number of times that the current is applied to the device is equal to or more than the average load current, the more the low-melting-point fusible alloy piece before melting. Since the swelling based on the crystal change of 6 can be increased, the first electrode 51 based on the swelling caused by the surface tension of the molten low melting point fusible alloy.
And the second electrode 52 can be quickly contacted.
上記において、第二電極52と溶融せる低融点可溶合金
との接触をよくするために、同電極52を当該合金と同一
または別の合金でメッキすることが望ましい。In the above, in order to improve the contact between the second electrode 52 and the low melting point fusible alloy to be melted, it is desirable that the same electrode 52 be plated with the same or another alloy.
上記において、膜抵抗は第2図に示すように、感温セ
ンサーの両側に設けることもできる。In the above description, the film resistance can be provided on both sides of the temperature sensor as shown in FIG.
また、通電時間の経過と共に盛り上りが進行していく
から、電極52と低融点可溶合金片6との間隔を適当に設
定することにより、スイッチオン時期を通電開始後、数
分から数年になし得る。In addition, since the swelling progresses with the passage of the energization time, by appropriately setting the interval between the electrode 52 and the low-melting-point fusible alloy piece 6, the switch-on timing is set to several minutes to several years after the start of energization. I can do it.
上記実施例では、結晶変態により変形する低融点可溶
合金片を用いているが、再結晶により変形する低融点可
溶合金片を用いることもできる。In the above embodiment, a low melting point fusible alloy piece deformed by crystal transformation is used, but a low melting point fusible alloy piece deformed by recrystallization may be used.
<発明の効果> 本発明に係る温度センサーは、低融点可溶合金片を溶
融させ、その溶融金属の表面張力による盛り上がりによ
りスイッチのオン作動を行うようにしているから、振動
等の機械的外力で温度センサーが誤動作するのを防止で
きる。<Effect of the Invention> The temperature sensor according to the present invention melts the low melting point fusible alloy piece and turns on the switch by the swelling due to the surface tension of the molten metal. Can prevent the temperature sensor from malfunctioning.
また、結晶変態または再結晶による低融点可溶合金片
の盛り上がりによってもスイッチのオン作動を行なわせ
ることができるから、低融点可溶合金片の融点の外、結
晶変態温度または再結晶温度を感温点にでき感温点を拡
張できる。Further, since the switch can be turned on by the swelling of the low melting point fusible alloy piece due to crystal transformation or recrystallization, the crystal transformation temperature or recrystallization temperature can be sensed in addition to the melting point of the low melting point fusible alloy piece. It can be set to a hot spot and the hot spot can be extended.
第1図Aは本発明の一実施例を示す説明図、第1図Bは
第1図Aおけるb−b断面図、第2図は本発明の別実施
例を示す説明図である。 51・52……電極、6……低融点可溶合金片1A is an explanatory view showing one embodiment of the present invention, FIG. 1B is a sectional view taken along the line bb in FIG. 1A, and FIG. 2 is an explanatory view showing another embodiment of the present invention. 51 ・ 52 ... Electrode, 6 ... Low melting point fusible alloy piece
Claims (2)
の表面張力による盛り上がりによりスイッチのオン作動
を行うことを特徴とする温度センサー。1. A temperature sensor wherein a low melting point fusible alloy piece is melted and a switch is turned on by a swelling due to surface tension of the molten metal.
により変形する請求項1記載の温度センサー。2. The temperature sensor according to claim 1, wherein the low melting point fusible alloy piece is deformed by crystal transformation or recrystallization.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1229724A JP2799996B2 (en) | 1989-09-04 | 1989-09-04 | Temperature sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1229724A JP2799996B2 (en) | 1989-09-04 | 1989-09-04 | Temperature sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0392736A JPH0392736A (en) | 1991-04-17 |
JP2799996B2 true JP2799996B2 (en) | 1998-09-21 |
Family
ID=16896704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1229724A Expired - Fee Related JP2799996B2 (en) | 1989-09-04 | 1989-09-04 | Temperature sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2799996B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101294854B (en) * | 2007-04-23 | 2010-12-01 | 博奥生物有限公司 | Chip type heater element |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100745503B1 (en) * | 2001-03-22 | 2007-08-02 | 삼성테크윈 주식회사 | Apparatus for measuring temperature and holding time |
CN105758536B (en) * | 2016-05-04 | 2018-03-30 | 国网山东省电力公司莱芜供电公司 | The temperature measurement and alarm device of electrical apparatus interstar connection folder |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158287A (en) * | 1978-06-02 | 1979-12-13 | Mitsubishi Electric Corp | Abnormal temperature rise warning device |
-
1989
- 1989-09-04 JP JP1229724A patent/JP2799996B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101294854B (en) * | 2007-04-23 | 2010-12-01 | 博奥生物有限公司 | Chip type heater element |
Also Published As
Publication number | Publication date |
---|---|
JPH0392736A (en) | 1991-04-17 |
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