JPS59126685A - Pattern formation by lift-off method - Google Patents

Pattern formation by lift-off method

Info

Publication number
JPS59126685A
JPS59126685A JP58001183A JP118383A JPS59126685A JP S59126685 A JPS59126685 A JP S59126685A JP 58001183 A JP58001183 A JP 58001183A JP 118383 A JP118383 A JP 118383A JP S59126685 A JPS59126685 A JP S59126685A
Authority
JP
Japan
Prior art keywords
layer
substrate
pattern
cutting die
deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58001183A
Other languages
Japanese (ja)
Other versions
JPS6260832B2 (en
Inventor
Ichiro Ishida
一郎 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58001183A priority Critical patent/JPS59126685A/en
Publication of JPS59126685A publication Critical patent/JPS59126685A/en
Publication of JPS6260832B2 publication Critical patent/JPS6260832B2/ja
Granted legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain the pattern of a deposit layer with gentle pattern edges by depositing a deposit substance on a substrate which rotates within a substrate surface to which the incidence angle of said substance onto the substrate does not become vertical, and removing the deposit layer while applying mechanical oscillation. CONSTITUTION:At the part unnecessitating the deposit layer on the main surface of a base layer 2, a cutting die 3 having no eave structure is formed faithfully to an image drawing or photo mask pattern. Therefore the deposit layer is formed while the base layer 2 is rotated within the substrate rotary surface 6 to which the incidence angle 5 of the deposit substance onto the substrate does not become vertical, and then a coating layer 7 covering the deposit layer 4 is formed. Afterwards, the coating layer 7 and the cutting die 3 are removed while applying mechanical oscillation to the cutting die 3 and the coating layer 7, thus forming the pattern of the deposit layer 4.

Description

【発明の詳細な説明】 本発明はリフトオフ法によるバターニング工程に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a patterning process using a lift-off method.

リフトオフ技術は薄膜層等のパターニングに用いられる
重要な技術の−っである。これはフォトレジストを用い
て抜き屋を形成し、との開孔部を如くその上層部が下層
部よシはり出しだいわゆる庇構造が一必要であり都 し
かし庇構造の抜き型を用いる限り描画又はフォトマスク
パターンに忠実な堆積層4のパターン制御は困難であっ
た。すなわち第1図(aJに示す如く堆積物が基板、に
垂直に入射しても、堆積物の一部は抜き型3の庇の下に
まわり込み、リフトオフ後の堆積層4のパターンは第1
図(b)に示す如くこのまわり込み量によって規定され
、このまわシ込み量の制御は困難であった。
Lift-off technology is an important technique used for patterning thin film layers. This requires a so-called eave structure in which a cutout is formed using photoresist, and the upper layer protrudes from the lower layer through the opening. Alternatively, it has been difficult to control the pattern of the deposited layer 4 faithfully to the photomask pattern. In other words, even if the deposits are incident perpendicularly to the substrate as shown in FIG.
As shown in Figure (b), it is defined by the amount of wrap around, and it has been difficult to control the amount of wrap.

更になめらかなパターンエツジを得る為に第2図(a)
に示す如く堆積物を堆積物の基板上への入射角が垂直で
なく且つ抜き屋の下層部の側面に堆積物が付着しなら入
射角が得られる基板面内で回転している基板上に堆積さ
れる場合でも堆植物の一部は庇の下に予定以上まわシ込
むが、抜き型の下ノ曲部の形状で規定される六ターンを
形成し、す7トオ7後の堆積層のパターンは第2図(b
)に示す如くやは夛描画またはフォトマスクパターンを
忠実に転写する事は困難であった。あるいは堆積物が抜
き型の側面に付着しない場合は第3図(alに示す如く
庇構造を有さない抜き製3が使える場合も考えられ、描
画又はマスクパターン1に忠実な堆積層4のバクーン制
御は容易になるが、第3図(b)にボす如くパターンの
エツジの形状は抜き型の一1面の形状に依存するため急
峻な段差が生じる。すなわち従来のり7トオフ法では、
描画又はフォトマスクパターンに忠実な堆積層パ゛ター
ンの形成と、なめらかな段差を持ったパター/エツジの
形成と両立させる事は困難であった。
In order to obtain even smoother pattern edges, use Fig. 2 (a).
As shown in Figure 2, if the angle of incidence of the deposit onto the substrate is not perpendicular and if the deposit adheres to the side of the lower layer of the punching chamber, the deposit is placed on the substrate rotating within the plane of the substrate. Even when piled up, some of the piled plants will be pushed under the eaves more than expected, but they will form six turns defined by the shape of the lower curved part of the cutting die, and the piled layer after 7 to 7 will be formed. The pattern is shown in Figure 2 (b
), it was difficult to faithfully transfer multiple drawings or photomask patterns. Alternatively, if the deposits do not adhere to the sides of the cutting die, it is possible to use a punching die 3 that does not have an eaves structure as shown in Figure 3 (al), and forming a vacuum of the deposited layer 4 that is faithful to the drawing or mask pattern 1. Although control becomes easier, as shown in Fig. 3(b), the shape of the edge of the pattern depends on the shape of one side of the cutting die, resulting in a steep step.In other words, in the conventional glue 7-off method,
It has been difficult to simultaneously form a deposited layer pattern faithful to a drawing or photomask pattern and form a pattern/edge with smooth steps.

本発明の目的は、描画又はフォトマスクパターンに忠実
な堆積層のパターンの形成と、なめらかな段差を持った
パターンエツジの形成との両立を可能にするリフトオフ
法によるパターン形成法を騰供する事にある。
An object of the present invention is to provide a pattern forming method using a lift-off method that enables both the formation of a deposited layer pattern faithful to a drawing or photomask pattern and the formation of pattern edges with smooth steps. be.

不発明によれば、す7トオフ法によるバターユング工程
において抜き型を設ける工程と、該抜き型によってパタ
ーニングされる堆積物を堆積物の基板上への入射角が垂
直にならない基板面内で回転している基板上に堆積させ
る工程と、該堆積層をおおう被覆層を設けて該被覆層と
該抜き減とで不必要な堆積層をはさむ工程と該抜き型及
び被蝋響を機械的振動を加えながら除去する工程とを含
む事を特徴とするりフトオフ法によるパターン形成法が
得られる。
According to the invention, there is a step of providing a cutting die in the Bater-Jung process using the S7-to-off method, and rotating the deposit patterned by the cutting die within the plane of the substrate where the angle of incidence of the deposit onto the substrate is not perpendicular. a step of depositing the deposited layer on a substrate that is coated, a step of providing a covering layer covering the deposited layer and sandwiching the unnecessary deposited layer between the covering layer and the cutting die, and a step of subjecting the cutting die and the wax to mechanical vibration. A pattern forming method using a lift-off method is obtained, which is characterized in that it includes a step of removing while adding.

以下図面を参照して本発明の詳細な説明する。The present invention will be described in detail below with reference to the drawings.

本発明の原理を第4図(a)〜((lを用いて説明する
The principle of the present invention will be explained using FIGS. 4(a) to ((l).

基部層2の主表面上の電積飾を必要としない部分に庇構
造を持たない抜き型3を描画又はフォトマスクパターン
1−に忠実に形成しく第4凶(a)i、シρ為る後に堆
積物の基板上への入射角5が垂直にならない基板回転面
6内で基部層2を回転させながら堆積層4を形成しく第
4図(b))、その後、該堆積層4を覆う被覆層7を形
成しく第4図(C))、Lかる後に該抜き型3と該被覆
層7に機械的退動を加えなから該被覆層7と該抜き型3
を除去する事によシ、堆積層4のパターンを形成する(
第4図(d))以上の結束、描画又はフォトマスクパタ
ーン1に忠実で、なめらかなパターンエツジ部を持った
堆積層パター/を形成する挙ができる。すなわち、庇構
造を持たない抜き減を用いる/(め、堆積層のパターン
は描1■又はフォトマスクパターンの転写粘度のみで現
定墳れた抜き型によって積板よく災現惑れる。更に堆積
物が基板に歩直でない角にで入射し、基板が回転してい
るため、抜き型の胸囲に抜き型の影が止しその部分にt
工・池の部分に比べて厚さの博い堆tA +−が形成さ
れ、パター/エツジは・なめらかな阪煮となる。抜き型
の側面に付層した不要なy扼8tIi#は抜き型3と被
考染層7にはさまれ機械白5振動が加えられてこれ等が
豚去される時に同時に除去される。従って描画又はフォ
トマスクパターンに忠実でなめらかなパターンエツジ部
を持った堆積1偏パターンを形成1゛る事ができる。
A cutting die 3 having no eaves structure is formed faithfully to the drawing or photomask pattern 1 on a portion of the main surface of the base layer 2 that does not require electrodeposition. Afterward, a deposited layer 4 is formed while rotating the base layer 2 within the substrate rotation plane 6 in which the incident angle 5 of the deposit onto the substrate is not perpendicular (FIG. 4(b)), and then the deposited layer 4 is covered. After the coating layer 7 is formed (FIG. 4(C)), the coating layer 7 and the cutting die 3 are not mechanically retracted.
A pattern of the deposited layer 4 is formed by removing (
It is possible to form a deposited layer pattern that is faithful to the binding, drawing, or photomask pattern 1 shown in FIG. 4(d)) and has smooth pattern edges. In other words, the pattern of the deposited layer is determined only by the transfer viscosity of the photomask pattern or by using a punching die that does not have an eaves structure. Because the object is incident on the board at an angle that is not perpendicular to the board, and the board is rotating, the shadow of the cutting die will stop at the chest circumference of the cutting die, and the t will appear in that area.
A thicker trough is formed compared to the groove and pond parts, and the putter/edge becomes smooth. Unnecessary layers 8tIi# attached to the sides of the cutting die are sandwiched between the cutting die 3 and the dyed layer 7, and are removed at the same time when the machine is subjected to vibration and removed. Therefore, it is possible to form a deposited one-sided pattern that is faithful to the drawing or photomask pattern and has smooth pattern edges.

次に4.発明をよシ良く理解する為に実施例をあけて説
明する。第5図Ial〜(dJを用いて本発明の好まし
い尖り例としてン、七7ソ/素子の基部電極。  の&
進方法を貌13.ljする。
Next 4. In order to better understand the invention, examples will be explained below. FIG.
13. lj.

第5図(iijに示す如く絶縁基板9上の基部電極を形
成する部分以外の領域に例えばフォトマスクパターンエ
ツジ8によってその位置が決定され、庇構造を持たない
抜きfilOを例えはポジティブ型のフォトレジストを
用いて例えは1.5月nの厚さに形成する。その後第5
図(b)に示を如く基部電極に用いる例えはAu−Pb
−Inのような鉛合金等の超伏、21I一層11を、基
板上への入射角が組直にならない基板面内で回転してい
る基板上へ例えば21)OnnIの厚さに蒸着する。そ
の結果抜き呈10の影が生じる抜き型10の周囲の部分
にはhさが200om以下の超伝導層11がなめらかな
段差をもって形パ 導層を7オトレジスト抜きm10 と7オトレジスト被
覆I#IJ12 とでLさんだ後、超音波揚動を加えな
からアセトン中で7オトレジスト抜き型1oとフォトレ
ジスト被覆層12を除去すると第5図(dJに示す如く
フォトマスクパターンエツジ8で精度よく規定され、な
めらかなパターンエツジ部を持った基部電極13が得ら
れる。第6図(a)〜(f)を用いて本発明の他の好ま
しい実施例としてジョセフソン素子の製造方法を説明す
る。
As shown in FIG. 5 (iii), the position of the area other than the part where the base electrode is formed on the insulating substrate 9 is determined by, for example, a photomask pattern edge 8, and the cutout filO having no eaves structure is formed by using, for example, a positive type photolithography. A resist is used to form the film to a thickness of, for example, 1.5 months.
As shown in Figure (b), the example used for the base electrode is Au-Pb.
A single layer 11 of a superfluid, 21I, such as a lead alloy such as -In, is evaporated to a thickness of, for example, 21) OnnI onto a substrate that is rotating in the plane of the substrate, where the angle of incidence onto the substrate is not realigned. As a result, in the area around the cutting die 10 where the shadow of the cutting pattern 10 is produced, a superconducting layer 11 with h of 200 ohm or less is formed with a smooth step to form the conductive layer. After cutting the photoresist in acetone and removing the photoresist cutting die 1o and the photoresist coating layer 12 in acetone without applying ultrasonic lift, the photomask pattern edge 8 is precisely defined and smooth as shown in Figure 5 (dJ). A base electrode 13 having a pattern edge portion is obtained.A method for manufacturing a Josephson element as another preferred embodiment of the present invention will be explained using FIGS. 6(a) to 6(f).

第6図(a)に示す如く絶縁基板9上に基部電極Bを設
けたものを例えば第3図(a)〜(d)の方法で用意す
る。次に第6図tb+に示す如く接合を形成する部分に
、例えばフォトマスクパターンエツジ8によってその位
置が決定され、庇構造を持たない抜き型10を例えばポ
ジティブ型のフォトレジストを用いて例えば15μmの
厚さに形成する。その後第6図(C1に示す如く絶縁層
14に用いるSi0層を基板上への入射角が垂直になら
ない基板面内で回転している基板上へ例えば300nm
の厚さに蒸着する。その結果抜き型10の影が生じる抜
き型10の周囲の部分には300nm以下の厚さの絶縁
層ががめらかな段差を持って形成される。その後第6図
(dlに示す如く例えば15μm厚のポジティブ型7t
トレジストを用いたフォトレジスト被aJ&t2で絶縁
層14をおおい、不要な絶縁層をフォトレジスト抜!型
10と7オトレジスト被覆層12とではさんだ後超音波
振動を加えながらアセトン中でフォトレジスト抜き型1
0とフォトレジスト被覆層12を除去すると第6図(e
)に示す如くフォトマスクパターンエツジ8で精度よく
規定され、なめらかなパターンエツジ部で囲まれた接合
領域15が得られる。その後接合領域15に第6図(f
)に示す如くトンネル障壁となる接合障壁層16を例え
ばRFプラズマ酸化法で形成する。その後、該接合障壁
1vi16を大気にさらす事なく例えばPb−B1又は
Pb−Auに代表される鉛合金等の超伝導材料を例えば
400nmの厚さに堆積し対向電極17を形成する。こ
の結果フォトマスクパターンエツジ8で精度よく規定さ
れ、なめらかなパターンエツジ部で1fflすれた接合
領域を含む高品質ジョセフソン素子が得られる。
A base electrode B provided on an insulating substrate 9 as shown in FIG. 6(a) is prepared, for example, by the method shown in FIGS. 3(a) to 3(d). Next, as shown in FIG. 6 tb+, the position is determined by, for example, a photomask pattern edge 8 at a portion where a bond is to be formed, and a cutting die 10 having no eave structure is used, for example, with a positive type photoresist to form a 15 μm thick film. Form into a thick layer. Thereafter, as shown in FIG. 6 (C1), the Si0 layer used for the insulating layer 14 is deposited by a thickness of, for example, 300 nm onto the substrate which is rotating within the plane of the substrate where the angle of incidence on the substrate is not perpendicular.
Deposit to a thickness of . As a result, an insulating layer having a thickness of 300 nm or less is formed with smooth steps around the area around the cutting die 10 where the shadow of the cutting die 10 is produced. After that, as shown in Figure 6 (dl), for example, a 15 μm thick positive type 7t
Cover the insulating layer 14 with photoresist aJ&t2 and remove the unnecessary insulating layer from the photoresist! After being sandwiched between molds 10 and 7 photoresist coating layer 12, the photoresist is removed from mold 1 in acetone while applying ultrasonic vibration.
0 and the photoresist coating layer 12 are removed, FIG.
), a bonding region 15 is obtained which is precisely defined by the photomask pattern edges 8 and surrounded by smooth pattern edges. After that, the bonding area 15 is
), a junction barrier layer 16 serving as a tunnel barrier is formed by, for example, an RF plasma oxidation method. Thereafter, without exposing the junction barrier 1vi16 to the atmosphere, a superconducting material such as a lead alloy such as Pb-B1 or Pb-Au is deposited to a thickness of, for example, 400 nm to form the counter electrode 17. As a result, a high-quality Josephson device is obtained which is precisely defined by the photomask pattern edges 8 and includes a junction region with a smooth pattern edge area of 1 ffl.

i−ンエノジ部を持った堆積層パターンを実現可能なら
しめるために、堆積物をその基板上への入射角が垂直に
ならない基板面内で回転している基板上に堆積させる点
と、不要が堆積層を抜き型とではさむ被覆層を設け、そ
れ等を機械的振動を加えながら除去する点にある。
In order to make it possible to realize a deposited layer pattern with an i-en-emission part, there are two points: the deposit is deposited on a rotating substrate in the plane of the substrate where the angle of incidence on the substrate is not perpendicular; A coating layer is provided to sandwich the deposited layer between cutting dies, and the coating layer is removed while applying mechanical vibration.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)〜(b)は一つの従来のリフトオフ技術に
ついてその原理を説明する為の構造断面図である。 第2図(a)〜(blは別の考えられうるリフトオフ技
術についてその原理を説明する為の構造断面図である。 第3図(a)〜(b)は更に別の考えられるリフトオフ
技術についてその原理を説明する為の構造断面図である
。 第4図(al〜(dlは本発明の詳細な説明するための
主要製造工程に於ける構造断面図である。 第5図(al〜(dlは本発明の一実施例によるジョセ
フソン素子の基部電極の製造方法の各工程に於ける素子
の断面図である。 第6図(a)〜(f)は本発明の別の実施例によるジョ
セフソン素子の製造方法の各工程に於ける素子の断面図
である。 図に於いて、1は描画スミフォトマスクパター、ンンは
基部層、3は抜き型、4は堆積層、5は堆積物の基板上
への入射角、6は基板回転面、7は被覆層、8はフォト
マスクパターンエツジ、9は絶縁基板、10はフォトレ
ジスト抜き型、11は超伝導層、12はフォトレジスト
被覆層、13は基部電極、14は絶縁層、15は接合領
域、16は接合障壁層、17は対向電極である。 特許出顯人工人技石院長石板誠− 第1図 (α) (bン 第2図 ノー (b) (fl) 396− (α) (C)
FIGS. 1(a) to 1(b) are structural sectional views for explaining the principle of one conventional lift-off technique. Figures 2 (a) to (bl) are structural cross-sectional views for explaining the principle of another possible lift-off technology. Figures 3 (a) to (b) are still another possible lift-off technology. It is a structural cross-sectional view for explaining the principle. dl is a cross-sectional view of the device at each step of a method for manufacturing a base electrode of a Josephson device according to an embodiment of the present invention. 3 is a cross-sectional view of the device at each step in the method for manufacturing a Josephson device. In the figure, 1 is a drawn Sumiphotomask pattern, N is a base layer, 3 is a cutting die, 4 is a deposited layer, and 5 is a deposited Incident angle of the object onto the substrate, 6 is the substrate rotation plane, 7 is the coating layer, 8 is the photomask pattern edge, 9 is the insulating substrate, 10 is the photoresist cutting die, 11 is the superconducting layer, 12 is the photoresist coating 13 is a base electrode, 14 is an insulating layer, 15 is a bonding region, 16 is a bonding barrier layer, and 17 is a counter electrode. Figure 2 No (b) (fl) 396- (α) (C)

Claims (1)

【特許請求の範囲】[Claims] リフトオフ法によるパターニング工程において抜き型を
設ける工程と該抜き型によってパターニングされる堆積
物を、堆積物の基板上への入射角が垂直にならない基板
面内で回転している基板上に堆積させる工程と、該堆積
層をおおう被覆層を設けて該被覆層と該抜き型とで不必
要な堆積層をはさむ工程と該抜き型及び該被覆層を機械
的振動を加えながら除去する工程とを含む墨を特徴とす
るリフトオフ法によるパターン形成法。
A step of providing a cutting die in a patterning process using a lift-off method, and a step of depositing a deposit patterned by the cutting die on a rotating substrate within a substrate plane in which the incident angle of the deposit onto the substrate is not perpendicular. and a step of providing a coating layer covering the deposited layer and sandwiching the unnecessary deposited layer between the coating layer and the cutting die, and a step of removing the cutting die and the coating layer while applying mechanical vibration. A pattern formation method using the lift-off method, which features black ink.
JP58001183A 1983-01-10 1983-01-10 Pattern formation by lift-off method Granted JPS59126685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58001183A JPS59126685A (en) 1983-01-10 1983-01-10 Pattern formation by lift-off method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58001183A JPS59126685A (en) 1983-01-10 1983-01-10 Pattern formation by lift-off method

Publications (2)

Publication Number Publication Date
JPS59126685A true JPS59126685A (en) 1984-07-21
JPS6260832B2 JPS6260832B2 (en) 1987-12-18

Family

ID=11494332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58001183A Granted JPS59126685A (en) 1983-01-10 1983-01-10 Pattern formation by lift-off method

Country Status (1)

Country Link
JP (1) JPS59126685A (en)

Also Published As

Publication number Publication date
JPS6260832B2 (en) 1987-12-18

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