JPS59125672A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS59125672A JPS59125672A JP58000831A JP83183A JPS59125672A JP S59125672 A JPS59125672 A JP S59125672A JP 58000831 A JP58000831 A JP 58000831A JP 83183 A JP83183 A JP 83183A JP S59125672 A JPS59125672 A JP S59125672A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- electrode
- base
- base junction
- wirings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 230000003405 preventing effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
Abstract
Description
【発明の詳細な説明】
〔発明の技術分５・ｆ〕
本発明はフォトトランジスタ等の受光素子全形成する半
導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Part 5.f of the Invention] The present invention relates to a semiconductor device in which all light receiving elements such as phototransistors are formed.
従来の受光素子は、チャネル防止用としてベース接合上
にアルミニウム配線を行なっている。Conventional light-receiving elements have aluminum wiring on the base junction to prevent channels.
第１図はその従来の受光素子を示し、１はコレクタ層、
２はベース層、３はエミツタ層、４はＳ ＋ ０２膜（
絶縁膜）、５はベース電４・メ、５□ｌはこのベース電
極に接続されたアルミニウム配線、６はエミッタ電極で
ある。即ち従来は、ベース接合上にアルミニウム配線５
１及びベース’Ｉｊ’） ｕｊ。FIG. 1 shows the conventional photodetector, in which 1 is a collector layer;
2 is the base layer, 3 is the emitter layer, and 4 is the S + 02 film (
(insulating film), 5 is a base electrode 4, 5□l is an aluminum wiring connected to this base electrode, and 6 is an emitter electrode. That is, in the past, aluminum wiring 5 was placed on the base junction.
1 and base 'Ij') uj.
５を配置し、該配線′ｒｄ極５Ｉ とベース層２間を同
電位にしてチャネル防止を行なっていた。5 was placed, and the potential between the wiring 'rd electrode 5I and the base layer 2 was set to be the same to prevent a channel.
受光素子は一般的にコレクタ、エミッタ間にバイアスを
かけ、ベースを受光部として＋１・１１作４せている。Generally, a light receiving element is configured such that a bias is applied between the collector and the emitter, and the base is used as the light receiving part.
よってコレクタ、エミ、り間のリーク電流工。。０が高
いと、光を感知する１）１■にオン状態となり問題であ
る。従来枝術のものだと、コレクタ、エミッタ間にバイ
アスをかげても、ベース側はノンバイアス状態となるこ
とがあり非受光期間）、チャネル防止も不完全で、ＩＪ
−り箱、流工。８゜も筒くなるものであっｆｃ、。Therefore, there is a leakage current between the collector, emitter, and rim. . If 0 is high, it will be in the ON state in 1) 1■ which senses light, which is a problem. With conventional branch technology, even if a bias is applied between the collector and emitter, the base side may be in a non-bias state (during the non-light receiving period), channel prevention is incomplete, and IJ
- Ribako, Ryuko. It is cylindrical by 8 degrees, fc.
本発明は上記実情に鑑みてなきれたもので、チャネル防
止の効果をおとすことなく、リーク電流工。ゆ。を低減
させることができる坐り、“ｊ（体装置ｉ’１′を提供
しようとするものである。The present invention was developed in view of the above-mentioned circumstances, and is designed to prevent leakage current without compromising the effectiveness of channel prevention. hot water. The purpose is to provide a sitting device i'1' that can reduce the amount of stress.
本発明は、製品を組み立てるｌｐＪモベースの電；！１
ｙを取シ出すものは少なく、エミッタの’ＦＩＮ夕を、
１、全て０ｆｆ（ｊ品で取り出すことから、エミッタの
電位をベース接合上のｒｊｇ Ｒへ供給させることで、
終始チャネル防止に加え、リーク電流の減少が実現でき
て、ダブル効果を発揮できるようにしたものである。The present invention is based on the LPJ mobile base that assembles the product;! 1
There are few that extract y, and the 'FIN evening of the emitter,
1. All 0ff (Since it is taken out with j product, by supplying the emitter potential to rjg R on the base junction,
In addition to preventing channels from beginning to end, it also reduces leakage current, providing a double effect.
１ヅ下図面を参照して本発明の一実施例を説明する。第
２（′１２Ｉは同実施例を示すしＴ面イ（り電図である
が、これ妊］第１図のものと対応ざぜた場合の例である
から、対応個所には同一符号をイ１］シて説明を省略し
、特徴とする点の説明を行なう。1. One embodiment of the present invention will be described with reference to the drawings below. 2nd ('12I indicates the same embodiment, and T-side A (represents an electric diagram, but this is an example) Since this is an example of a case where it corresponds to the one in Figure 1, the same reference numerals are assigned to corresponding parts. 1] The detailed explanation will be omitted, and the characteristic points will be explained.
同実施例の特徴は、受光素子１１のベース接合の絶縁ｎ
・；Ｊ４上で前記ベース接合に沿って設けられ受光素子
１１のエミッタ電極６に接続された’ｆｌｊ： １夕（
アルミニウム）配線６１を具備させた点である。この」
ん合ベース接合（ベース、コレクタ間接合）は、平面的
に見れば環状であるため、これに対応する電棲配綜６１
も環状となる。The feature of this embodiment is that the insulation n of the base junction of the light receiving element 11 is
・; 'flj: 1 evening (
This is because a wiring 61 (aluminum) is provided. this"
Since the joint base joint (joint between the base and the collector) is annular when viewed from above, the corresponding electrical connection 61
It also becomes circular.
上記の如くｈ′４成きれた受光素子にあっては、コレク
タ、エミッタ間バイアスにより、エミッタには終始バイ
アス電圧がかがっているから、電４■６１で終始チャネ
ル防止効果を発揮できる。In the light-receiving element which has completed h'4 as described above, a bias voltage is applied to the emitter from beginning to end due to the bias between the collector and emitter, so that the channel prevention effect can be exhibited from beginning to end with the voltage 4.times.61.
またエミ、り層３に負のバイアス電圧ががかり、この時
エミッタ、ベース間に１！［ｑ方向バイアス電圧がかか
ってベース層２と電（・＼配線６１ とが略同電位とな
り、従ってベースｊ・す２（こリーク’ｉ’１１．流の
原因となるキャリアが誘起されず、リーク・：１゜流’
ＣＥＱの発生を防止できる。実験によれば、第３図に示
す如くリーク電流■。ＥＯを略１／１ｏに減少できた。Also, a negative bias voltage is applied to the emitter layer 3, and at this time, 1! [When the q-direction bias voltage is applied, the base layer 2 and the electric wire 61 have approximately the same potential, so carriers that cause leakage 'i'11. Leak: 1° flow'
The occurrence of CEQ can be prevented. According to experiments, as shown in Figure 3, leakage current ■. The EO was reduced to approximately 1/1o.
以上説明した如く本発明によれば、エミッタ電極に接続
されるベース接合上の’）ｌｉ １４１！配線に終始バ
イアス電圧をかけられるから、チャネル防止効果が完全
化され、捷た上記’ｌ＋’、４・・反配糸′ｊｊとベー
ス層を同電位化できるから、リーク電流Ｉ。。。を極少
化し得る半導体装置が提供できるものである。As explained above, according to the present invention, ')li 141! on the base junction connected to the emitter electrode. Since a bias voltage is applied to the wiring from beginning to end, the channel prevention effect is perfected, and the base layer can be made to have the same potential as the twisted 'l+', 4... anti-wiring 'jj', so the leakage current I. . . Therefore, it is possible to provide a semiconductor device that can minimize the amount of noise.
第１図１ｄ従来装置の構成を示す断面図、第２［ン１は
本発明の−り７ｉｎ例のれｆ成を示すトリ１面し１１第
３［５：ｉは同描成の効果を示す特性し１である。−・
１・・・コレクタ層、２・・・ベース層、３・・・エミ
ツタ層、４・・・絶縁１漢、５・・・ベース電極、６・
・・エミッタ電極、６１ ・・・エミッタ電極につなが
る１１Ｌ極１・妃線、１１・・・受光シを子。Fig. 1d is a sectional view showing the configuration of a conventional device; The characteristics shown are 1. −・
DESCRIPTION OF SYMBOLS 1... Collector layer, 2... Base layer, 3... Emitter layer, 4... Insulation 1 layer, 5... Base electrode, 6...
...Emitter electrode, 61...11L pole 1/pin wire connected to the emitter electrode, 11...Light receiving wire.
Claims (1)
記ベース接合に沿って設けられ前記受光素子のエミッタ
電極に接続された電極配腺とを具備したことを特徴とす
る半導体装置。1. A semiconductor device comprising: a light-receiving element; and an electrode wiring provided on an insulating film at a base junction of the light-receiving element 0 along the base junction and connected to an emitter electrode of the light-receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58000831A JPS59125672A (en) | 1983-01-07 | 1983-01-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58000831A JPS59125672A (en) | 1983-01-07 | 1983-01-07 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59125672A true JPS59125672A (en) | 1984-07-20 |
| JPH0586678B2 JPH0586678B2 (en) | 1993-12-13 |
Family
ID=11484565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58000831A Granted JPS59125672A (en) | 1983-01-07 | 1983-01-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59125672A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942294A (en) * | 1972-03-03 | 1974-04-20 | ||
| JPS50144396A (en) * | 1974-05-09 | 1975-11-20 |
-
1983
- 1983-01-07 JP JP58000831A patent/JPS59125672A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942294A (en) * | 1972-03-03 | 1974-04-20 | ||
| JPS50144396A (en) * | 1974-05-09 | 1975-11-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586678B2 (en) | 1993-12-13 |
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