JPS59124146A - Manufacture of glass sealed semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a device having multiple pins at a high yield rate, by reducing the thickness at the four corners of a glass material layer for compressing a lead frame on an insulating substrate to zero or to the size thinner than the other part. CONSTITUTION:On an insulating substrate 1, a glass material layer 12 is evenly formed except four corners 1a. A lead frame 3 is compressed to the insulating substrate 1 by the glass material layer 12. A semiconductor element 6 is assembled, a cap 5 is placed on the element, and the device is sealed by glass 4. In this constitution, approximately the same compressing property is obtained in the vicinity of the central part and the four corners of the insulating substrate, and the lead frame is evenly compressed to the glass material layer. Therefore, break or cracks are not yielded in the glass when the assembling and the shaping of the lead frame are performed, the flow of the glass is excellent, and the device having poor appearance is not manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a glass-sealed semiconductor device, and more particularly to a method of manufacturing a glass-sealed semiconductor device having a large number of leads.

A conventional method for manufacturing a glass-sealed semiconductor device is shown in FIGS. 1 to 4. First, as shown in Fig. 1, a glass material 2 as a sealing material is formed to have a uniform thickness on an insulating substrate 1, and then a lead frame 3 shown in Fig. 2 is formed on a glass material z as shown in Fig. 3. The semiconductor element 6 is assembled by pressure bonding. Next, as shown in Figure 4,
A glass-sealed semiconductor device is obtained by sealing the glass with a cap in which the glass material 4 is formed on the lid part substrate 5.

In this method of manufacturing a glass-sealed semiconductor device, especially when a lead frame having a large number of leads is crimped onto a glass material layer, comparing the crimping properties between the center part and the edge part of the insulating substrate,
The glass material flows more easily at the edges of the insulating substrate. Therefore, if the flow of glass toward the edges is suppressed, the crimpability at the center of the insulating substrate will be insufficient, and the glass will crack during the subsequent process of shaping the lead frame in a predetermined position or assembling the semiconductor element. A problem occurred in which the glass containing the glass was chipped, which could impair the yield and appearance of glass-sealed semiconductor devices of 40 or more bottles.

An object of the present invention is to provide a manufacturing method that improves the above-described conventional glass-sealed semiconductor device manufacturing method and makes it possible to manufacture high-quality, multi-pin semiconductor devices with high yield. I'll go.

In the manufacturing method of the present invention, when forming a glass material layer for crimping a lead frame on an insulating substrate, the thickness of the glass material layer in the four corner regions of the insulating substrate is adjusted to include zero in extreme cases. This includes a step of forming the glass material layer thinner than the glass material layer in other areas.

Next, the present invention will be explained using examples.

5 to 8 are perspective views showing the order of manufacturing steps of the present invention. First, as shown in FIG. 5, a glass material layer 12 is formed to have a uniform thickness on an insulating substrate 1 only in regions other than the four corner regions 1a. Alternatively, a glass material layer is formed in the four corner regions 1a to be thinner than the glass material layer in the other regions.

Next, the lead frame 3 shown in FIG.
Then, as shown in FIG. 7, it is crimped onto the insulating substrate 1.

Furthermore, as shown in FIG. 8, the semiconductor element 6fc is assembled. Next, as shown in FIG. A sealed semiconductor device is obtained.

In the case of such a manufacturing method of a glass-sealed semiconductor device, the glass material layer formed on the insulating substrate is not formed in the area where the pressure bonding with the lead frame is good, that is, the four corner areas of the insulating substrate, or is thin. Because of this, it is possible to obtain approximately the same compression bonding properties as near the center of the insulating substrate. Therefore, when manufacturing a glass-sealed semiconductor device having a large number of pins, the lead frame can be crimped uniformly, and when glass-sealed, problems with glass flow due to the sealing part can be prevented, and the glass-sealed The appearance of the semiconductor device can be improved.

Even in the assembly process of semiconductor devices, even if there are many bottles, the lead frame cannot be evenly crimped onto the glass material layer on the insulating substrate, so chips or cracks in the glass may occur during the assembly process and shaping of the lead frame. Things can be prevented.

As described above, in the method of manufacturing a semiconductor device according to the present invention, 40
This has the advantage of stabilizing the assembly process and improving the appearance of a glass-sealed semiconductor device having a pin lead or higher.

[Brief explanation of the drawing]

1 to 4 are process diagrams showing a conventional method for manufacturing a glass-sealed semiconductor device, and FIGS. 5 to 8 are process diagrams for explaining one embodiment of the present invention. 1... Insulating substrate, la... Four corner areas of insulating substrate, 2.12... Glass material layer, 3...
. . . Lead frame, 4 . . . Glass material layer of lid substrate, 5 . . . Lid substrate, 6 . . . Semiconductor element.

Claims (1)

[Claims] In the method for manufacturing a device, the glass material layer is formed only in an area other than the four corner areas on the insulating substrate, or the thickness of the glass material layer in the four corner areas of the insulating substrate is made equal to the thickness of the glass material layer in other areas. A method for manufacturing a glass-sealed semiconductor device, characterized in that the device is formed thinner than the thickness of a material layer.