JPS59123263A - Light-driven type semiconductor device - Google Patents
Light-driven type semiconductor deviceInfo
- Publication number
- JPS59123263A JPS59123263A JP57230688A JP23068882A JPS59123263A JP S59123263 A JPS59123263 A JP S59123263A JP 57230688 A JP57230688 A JP 57230688A JP 23068882 A JP23068882 A JP 23068882A JP S59123263 A JPS59123263 A JP S59123263A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light guide
- diameter
- semiconductor chip
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 4
- 239000013307 optical fiber Substances 0.000 abstract description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 3
- 230000036211 photosensitivity Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000012790 adhesive layer Substances 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000004807 localization Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野Ｊ
この発明は光駆動型半導体装置にかかり、／侍に筒効率
で信頼性の高い光伝送構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optically driven semiconductor device, and relates to an optical transmission structure that is highly efficient and highly reliable.
光駆動型半導体装置（光トリガサイリスタ）における光
伝送構造の改良については、従来からライトガイドを定
位させて光伝送効率の向上をはかる手段として、端部を
固定治具によってライトガイドと受光部との位置合わせ
を行なうもの、端部にシリコンコムのような光結合材を
付着させて効率同上をはかるものなどが開示されている
。Regarding the improvement of the light transmission structure in a light-driven semiconductor device (light-triggered thyristor), as a means of localizing the light guide and improving the light transmission efficiency, the ends of the light guide and the light receiving part are connected using a fixing jig. Some methods have been disclosed in which the positioning is performed, and others have been disclosed in which an optical coupling material such as a silicon comb is attached to the end portions to improve efficiency.
斜上の手段にはライトガイドが固着されないため位置合
わせが困難で位置すれを生じやすい（固定治具による方
法）ことや、光結合材による場合には主正極となる銅と
ガラスとの熱膨張率との差のために熱歪によりライトガ
イドに応力が加わりクラックや折損の誘因になるなどの
欠点があった。Since the light guide is not fixed to the diagonal means, alignment is difficult and misalignment is likely to occur (method using a fixing jig), and when using an optical coupling material, the thermal expansion of the copper and glass, which is the main positive electrode, is difficult. Due to the difference in rate, stress is applied to the light guide due to thermal strain, which has the disadvantage of causing cracks and breakage.
この発明は斜上の背景技術の間粗点に鑑みて光伝達構造
を改良した光駆動型半導体装置を提供する。The present invention provides a light-driven semiconductor device with an improved light transmission structure in view of the shortcomings in the background art described above.
［発明の概要〕
この発明にかかる光駆動型半導体装置は、光駆動型半導
体素子を内装する気密のパッケージと、このパッケージ
に半導体素子の主面に非垂直に信号光を導入する光透過
窓と前記半導体素子主面の受光域との間を折曲して連結
するライトガイドとを備え、ライトガイドの半導体素子
側の径が半導体チップ主面の受光域の径よりも大きいこ
とを特徴とするものである。[Summary of the Invention] A light-driven semiconductor device according to the present invention includes an airtight package containing a light-driven semiconductor element, and a light-transmitting window that introduces signal light non-perpendicularly to the main surface of the semiconductor element. and a light guide bent and connected to the light-receiving area on the main surface of the semiconductor element, and characterized in that the diameter of the light guide on the semiconductor element side is larger than the diameter of the light-receiving area on the main surface of the semiconductor chip. It is something.
次にこの発明を１芙施例につき図面を参照して詳細に説
明する。第１図および第２図は］実施例の光トリガサイ
リスクを示し、図中、（１）は半導体チップで、その両
主面の電極が電極部材（２ｃ）、（２ａ）で圧接されて
夫々カソード、アノードを尋出し、カソード側主面のほ
ぼ中央の光照射域（１ａ）に信号光が印加される。この
信号光を印加するためのライトガイドに光ファイバ（３
）が用いられ、その１端面（３ａ）を前記受光部（１２
）に対向させるとともに、この端面（３ａ）の面積が受
光部（１ａ）の面積よりも犬に形成されている。そして
、光ファイツク（３）はさらに電極（２ｃ）に沿って半
導体チップ（１）の主面と平行に外囲器（４）の側面に
同けて設けられ、外囲器の周側面に貫設された管体（５
）中を通って受光窓の近傍に（この光ファイバの）他端
面（３ｂ）が位置するように配置されている。ライトガ
イドの両端（３ａ） 。Next, one embodiment of the present invention will be explained in detail with reference to the drawings. FIGS. 1 and 2 show an example of a photo-triggered scissor, in which (1) is a semiconductor chip, the electrodes on both main surfaces of which are pressed together by electrode members (2c) and (2a). The cathode and anode are exposed, respectively, and signal light is applied to a light irradiation area (1a) approximately in the center of the main surface on the cathode side. An optical fiber (3
) is used, and its one end surface (3a) is connected to the light receiving section (12).
), and the area of this end surface (3a) is smaller than the area of the light receiving part (1a). The optical fiber (3) is further provided along the electrode (2c), parallel to the main surface of the semiconductor chip (1), and on the side surface of the envelope (4), penetrating the peripheral side surface of the envelope. installed pipe body (5
) so that the other end surface (3b) (of this optical fiber) is located near the light receiving window. Both ends of the light guide (3a).
（３ｂ）にはライトガイドと屈折率が同等で伸縮性のあ
る、例えはシリコンコム（６）などを付着させ、その表
面張力を利用して半球状にしてもよい。また、受光部（
］、 ａ ）にもシリコンゴム（６′）等を塗布してお
いてもよい。(3b) may be attached with a stretchable material having the same refractive index as the light guide, such as a silicon comb (6), and may be shaped into a hemispherical shape by utilizing its surface tension. In addition, the light receiving section (
], a) may also be coated with silicone rubber (6') or the like.
次に、この発明は以下に述べる位置合わせ治具Ｕを用い
るとライトガイドの端面（３ａ）と受光部（１ａ）との
位置合わせかさらに良好に達成できる。Next, according to the present invention, by using the positioning jig U described below, the end face (3a) of the light guide and the light receiving portion (1a) can be more precisely aligned.
この定位部材０は第３図ないし第５図に示されるように
、第１の定位部材（ｌｌａ） Ｌ第２の定位部材（１１
，ｂ ）とからなる。第１の定位部材は一例の中心角が
９０°なる扇形状の大部（ｌｌ’ｃ）をイ１する円板、
第２の定位部材（ｌｌｂ）は第１の定位部材の大部（ｌ
ｉｅ）を充填する扇形部（ｌｉｄ）を有するとともに、
第１の定位部材の円板部分の外周に嵌合する環状部（Ｉ
ｌｅ）を備える。また、両部材の中心部には嵌合させて
円形の開孔（］、１ｆ）を形成する切欠（１１ｆ′）。As shown in FIGS. 3 to 5, this localization member 0 includes a first localization member (lla), a second localization member (11),
, b). The first localization member is a disk that forms a large part (ll'c) of a sector shape with an example central angle of 90°;
The second localization member (llb) is a large portion (lb) of the first localization member
ie) has a sector (lid) filling the
An annular portion (I
le). Furthermore, a notch (11f') is fitted in the center of both members to form a circular opening (1f).
（１１，ｆ″）を備える。斜上の定位部材はチップの表
面に第１の定位部材（１１ａ３を第４図に示すように接
着剤層（１０）で接着し、この接着時に開孔（ｌｌｆ）
を受光域に正対させる。ついでライトガイド（３）の、
予め端面に伸縮性の透光部材の例えばシリコンゴム（８
）を付着させたその一方の端部を開孔に挿入し、第２の
定位部材（１，１１））をライトガイドに挿通させて近
づけ成金させた状態が第５図にも示されている。(11, f'').The diagonally upward positioning member is attached to the surface of the chip by the first positioning member (11a3) with an adhesive layer (10) as shown in FIG. llf)
Directly face the light receiving area. Next, the light guide (3),
A stretchable light-transmitting member such as silicone rubber (8
) is attached to one end of the light guide, and the second positioning member (1, 11) is inserted into the light guide and brought close to the light guide, as shown in Fig. 5. .
さらに、この発明は半導体チップの三仁面に沿う方向に
限られず、主面に対し垂部方向ても、あるいはこれらの
中間であってもライトガイドによる光の導入に有効であ
り、光トリガサイリスクのみならず各種の光半導体装置
に対して広く適用できることはいうまでもない。Furthermore, the present invention is effective for introducing light through a light guide, not only in the direction along the three-sided plane of a semiconductor chip, but also in a direction perpendicular to the main surface, or in an intermediate direction, and the optical trigger site can be Needless to say, this method can be widely applied not only to risks but also to various optical semiconductor devices.
斜上の構造において、固定治具のみによるときは位置合
わせの精度を冒めることが非常に困難である。これは、
一般に、光感度と、臨界オフ電圧上昇率（ｄ ｖ／ ｄ
を耐量）との協調のために、受光部の径は小さいもの
になるからである。そして、ライトガイドが受光部から
第６図に示すように微か（△Ｘ）に横方向にずれてしま
うことが多い。この横方向のずれは光結合特性に大きく
影響し、ずれ△ｘ（ｍＷ）と光結合特性（％）とが第７
図に示すようにＩｆＡ著に対応し、サイリスクの光トリ
ガ感度を低下させサイリスクが点弧しないこともある。In a tilted structure, it is very difficult to maintain alignment accuracy when only a fixing jig is used. this is,
In general, photosensitivity and critical off-voltage rise rate (d v/d
This is because the diameter of the light-receiving part is made small in order to cooperate with The light guide often deviates slightly (ΔX) from the light receiving section in the lateral direction as shown in FIG. This lateral deviation greatly affects the optical coupling characteristics, and the deviation △x (mW) and the optical coupling characteristics (%)
As shown in the figure, in response to IfA, the optical trigger sensitivity of Cylisk may be lowered and Cylisk may not fire.
また、たとえサイリスクが点弧しても本来受光部直下で
均一に発生すべき電子−正孔対がライトガイドのすれの
ために片寄った狭い領域にのみ発生し、結果さして初期
点弧領域が狭くなり臨界オンｔｉ流上昇率（ａ；／ｄｔ
ｉｉｉｔ量）が低下する。In addition, even if Cylisk ignites, the electron-hole pairs that should normally be generated uniformly directly under the light receiving area are generated only in a narrow area that is uneven due to the friction of the light guide, resulting in a narrow initial ignition area. critical flow rate of rise (a;/dt
iiit amount) decreases.
斜上に対し、本発明は前記第２図によっても明らかなよ
うにライトガイドの端面（３ａ）の径を受光部の開孔径
よりも大きくしているので、ライトガイド吉受光部の微
少のずれが存しても受光域全域に光が照射され、結果さ
して光トリガ感度を低下させることなく、受光域が均一
に点弧するため、ｄｉ／ｄｊ耐量の低下もない。才た、
ライトガイドと受光部とが固着されないため、熱的、機
械的歪によるライトガイドのクラックや折れの恐れもな
く、ライトガイドの端面に塗着したシリコンコムの伸縮
性により縦方向の応力に対しても耐力が太きいという利
点がある。In the present invention, as shown in FIG. 2, the diameter of the end face (3a) of the light guide is made larger than the aperture diameter of the light-receiving part, so that slight deviations in the light-receiving part of the light guide can be avoided. Even if there exists light, the entire light-receiving area is irradiated with light, and as a result, the light-receiving area is ignited uniformly without significantly reducing the optical trigger sensitivity, so there is no reduction in di/dj tolerance. Talented,
Since the light guide and the light receiving part are not fixed, there is no risk of the light guide cracking or breaking due to thermal or mechanical strain. It also has the advantage of high yield strength.
次に上記発明に に出願したライトガイドの定位装置を
組合わせた第２の発明はさらに効果が顕著になる。Next, the second invention, which combines the above invention with the light guide localization device filed in 2003, has even more pronounced effects.
本発明によれば光感度、ｄｖ／ ｄｔ′＃ｆ量、ｄｉ／
ｄｔ耐量を低下させることなく高効率で信頼性の高い光
躯動型半導体装置を得ることができる。According to the present invention, photosensitivity, dv/dt'#f amount, di/
A highly efficient and reliable optical core semiconductor device can be obtained without reducing the dt withstand capability.
第１図は１実施例の光トリガサイリスクの断面図、第２
図は第１図の一部の断面図、第３図ないし、第５図はラ
イトガイドの定位部材を示し第３図は組立順を示す上面
図、第４図は断面図、第５図は組立後（ライトガイド固
定）の上面図、第６図は従来のライトガイドと受光面と
の４４」関を示す断面図、第７図はライ１〜ガイドと受
光部とのずれを光結合特性との相関を示す線図１である
。
１ 半導体チップ
１ａ 受光部
２ａ アノード電極
２ｃ カソード電極
３ ライトガイド
３ａ 、 ３ｂ ライトガイドの端面６．６′
シリコン
リ ライトガイドの定位部材
代理人 弁理士 井 上 −男
第１図
ｌＺＣ３
市 ２ 図
第 ３ 図
第 ４ 図
０
第 ５ 図Figure 1 is a cross-sectional view of the optically triggered scissor of one embodiment, and the second
The figure is a sectional view of a part of FIG. 1, FIGS. 3 to 5 show the positioning member of the light guide, FIG. 3 is a top view showing the assembly order, FIG. 4 is a sectional view, and FIG. A top view after assembly (with the light guide fixed), Figure 6 is a cross-sectional view showing the 44'' connection between the conventional light guide and the light receiving surface, and Figure 7 shows the optical coupling characteristics of the misalignment between the light guide and the light receiving surface. FIG. 1 is a diagram 1 showing the correlation between 1 Semiconductor chip 1a Light receiving part 2a Anode electrode 2c Cathode electrode 3 Light guides 3a, 3b End surfaces 6.6' of the light guides
Silicon Rewrite Guide Orientation Component Representative Patent Attorney Inoue - Male Figure 1ZC3 City 2 Figure 3 Figure 4 Figure 0 Figure 5
Claims (2)
ケージと、このパッケージに半導体チップの主面に非垂
直に信号光を導入゛する光透過窓と前記半導体チップ主
面の受光域との間を折曲して連結するライトガイドとを
備えた光駆動型半導体装置において、ライ１−ガイドの
半導体チップ側の径が半導体チップ主面の受光域の径よ
りも禾きいことを特徴とする光駆動型半導体装置。(1) An airtight knob cage that houses a light-driven semiconductor chip, a light transmission window that introduces signal light non-perpendicularly to the main surface of the semiconductor chip, and a light-receiving area on the main surface of the semiconductor chip. A light-driven semiconductor device comprising a light guide connected by bending the light guide, characterized in that the diameter of the light guide on the semiconductor chip side is larger than the diameter of the light receiving area on the main surface of the semiconductor chip. Light-driven semiconductor device.
ージと、このパッケージに半導体チップの主面番こ非垂
直に信号光を導入する光透過窓と前記半導体チップ主面
の受光域との間を折曲して連結するライトガイドとを備
えた光駆動型半導体装置において、ライトガイドが、一
対て嵌合面杏この峡合面の一部にライトガイドを保持す
る開孔を有し半導体チップに位置ぎめして固着された定
位部材によって取着されるとともに、半導体チップＭ（
１１の径が半導体チップ主面の受光域の径よりも大きい
ことを特徴とする光駆動型半導体装置。(2) An airtight notch cage in which an optical 1-driven semiconductor element is housed, a light transmission window that introduces signal light non-perpendicularly to the main surface of the semiconductor chip, and a light-receiving area on the main surface of the semiconductor chip; In a light-driven semiconductor device, the light guide has an opening for holding the light guide in a part of the fitting surface of the pair of fitting surfaces. The semiconductor chip M (
1. A light-driven semiconductor device characterized in that a diameter of 11 is larger than a diameter of a light-receiving area on a main surface of a semiconductor chip.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57230688A JPS59123263A (en) | 1982-12-28 | 1982-12-28 | Light-driven type semiconductor device |
| GB08322868A GB2127220B (en) | 1982-08-31 | 1983-08-25 | Light-triggered semiconductor device and light guide thereto |
| US06/526,807 US4695871A (en) | 1982-08-31 | 1983-08-26 | Light-triggered semiconductor device |
| DE19833331451 DE3331451A1 (en) | 1982-08-31 | 1983-08-31 | LIGHT-CONTROLLED SEMICONDUCTOR ELEMENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57230688A JPS59123263A (en) | 1982-12-28 | 1982-12-28 | Light-driven type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59123263A true JPS59123263A (en) | 1984-07-17 |
Family
ID=16911748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57230688A Pending JPS59123263A (en) | 1982-08-31 | 1982-12-28 | Light-driven type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59123263A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198860A (en) * | 1984-03-23 | 1985-10-08 | Mitsubishi Electric Corp | Optical semiconductor device |
| US4917719A (en) * | 1983-03-30 | 1990-04-17 | E. I. Du Pont De Nemours And Company | Herbicidal isothiazole derivatives |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55117276A (en) * | 1979-03-05 | 1980-09-09 | Hitachi Ltd | Light semiconductor controlled rectifier |
| JPS57188363A (en) * | 1981-05-15 | 1982-11-19 | Ricoh Co Ltd | Liquid temperature controller |
-
1982
- 1982-12-28 JP JP57230688A patent/JPS59123263A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55117276A (en) * | 1979-03-05 | 1980-09-09 | Hitachi Ltd | Light semiconductor controlled rectifier |
| JPS57188363A (en) * | 1981-05-15 | 1982-11-19 | Ricoh Co Ltd | Liquid temperature controller |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4917719A (en) * | 1983-03-30 | 1990-04-17 | E. I. Du Pont De Nemours And Company | Herbicidal isothiazole derivatives |
| JPS60198860A (en) * | 1984-03-23 | 1985-10-08 | Mitsubishi Electric Corp | Optical semiconductor device |
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