JPS59119878A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPS59119878A JPS59119878A JP57229996A JP22999682A JPS59119878A JP S59119878 A JPS59119878 A JP S59119878A JP 57229996 A JP57229996 A JP 57229996A JP 22999682 A JP22999682 A JP 22999682A JP S59119878 A JPS59119878 A JP S59119878A
- Authority
- JP
- Japan
- Prior art keywords
- cloth
- paper
- substrate
- solar cell
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000010445 mica Substances 0.000 claims abstract description 18
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 239000004744 fabric Substances 0.000 claims abstract description 9
- 239000003365 glass fiber Substances 0.000 claims abstract description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 20
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000465 moulding Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
木発Ｆ！Ａは可とう性基板上に光起電力発生要素として
非晶質シリコン薄膜を設けた太陽電池に関する。[Detailed description of the invention] Kibatsu F! A relates to a solar cell in which an amorphous silicon thin film is provided as a photovoltaic force generating element on a flexible substrate.
更に詳しくは該基板としてセラミックスの紙状物又は布
状物を太陽電池用基板として使用した太陽電池に関する
。More specifically, the present invention relates to a solar cell using a ceramic paper-like material or cloth-like material as the substrate for the solar cell.
非晶質薄膜をステンレス鋼、ガラス板などの非可とう性
基板に設けたもの、又可とう性基板としてポリイミド等
の樹脂薄膜を基板として使用する太陽電池がよく知られ
ている。Solar cells are well known in which an amorphous thin film is provided on a non-flexible substrate such as a stainless steel or glass plate, or a resin thin film such as polyimide is used as a flexible substrate.
非晶質太陽電池を製造するに際して可とう性フィルム基
板を用いる特徴は、基板上に必要な非晶質シリコン層を
連続的に設けることが出来、製造コスト及び製造の容易
性の面で非可とう性基板に比し極めて優位に立てること
になる。更に可とう性基板に形成された非晶質太陽電池
は従来の非可が出来、例えば曲面状態でも使用すること
が可能であシ、その応用が広がることが期待されている
。The advantage of using a flexible film substrate when manufacturing amorphous solar cells is that the necessary amorphous silicon layer can be continuously provided on the substrate, which is an advantage in terms of manufacturing cost and ease of manufacturing. This gives it an extremely advantageous advantage over flexible substrates. Furthermore, an amorphous solar cell formed on a flexible substrate can be used even in a curved state, for example, and is expected to be used in a wide range of applications.
しかるにかかる非晶質太陽電池を可とう性基板上に形成
させる場合、非晶質シリコン形成温度として少なくとも
２５０〜３５０℃の高温が望ましい為、高分子フィルム
を用いる場合には、耐熱性の優れ全ボリイ菜ドフィルム
しか適用出来ない。しかしポリイミドフィルムは、かか
る高温時における初期ヤング率があ捷り大きくなく非晶
質シリコン製膜時の熱応力に耐えるに充分な膜の強さを
持っていないという問題点がある。即ち充分な膜の強さ
を持っていない基板の場合には、非晶質薄膜を基板上に
設ける際、非晶質シリコン薄膜と基板、両方の熱膨強係
数の差異にもとずく熱応力が基板の機械的強度を越え基
板がカールしてし甘うことになる。However, when forming such an amorphous solar cell on a flexible substrate, a high temperature of at least 250 to 350°C is desirable as the amorphous silicon formation temperature. Only Bolii Nado film can be applied. However, polyimide films have a problem in that the initial Young's modulus at such high temperatures is large and does not have sufficient film strength to withstand thermal stress during the formation of amorphous silicon films. In other words, in the case of a substrate that does not have sufficient film strength, when an amorphous thin film is provided on the substrate, thermal stress due to the difference in thermal expansion coefficient between the amorphous silicon thin film and the substrate may occur. This exceeds the mechanical strength of the board, causing the board to curl.
このカールの程度が大きくなると太陽電池としての効率
が大幅に低下してしまうという重大な欠陥を紹来させる
ことが確認されている。さらに従来のポリイミドフィル
ムは、表面が平滑すぎるため高い光電変換効率を得るこ
とがむつかしい状態にある。It has been confirmed that when the degree of curl increases, a serious defect occurs in that the efficiency as a solar cell is significantly reduced. Furthermore, since the surface of conventional polyimide films is too smooth, it is difficult to obtain high photoelectric conversion efficiency.
従って、可とう性基板を用いて非晶質シリコン太陽電池
を実現するには少なくとも２５０°Ｃ以上の耐熱性に加
え、かかる高温時において製膜時の熱応力に耐えること
の出来る腰の強さ及び適宜な表面粗さをもった基板を供
しなければならない。Therefore, in order to realize an amorphous silicon solar cell using a flexible substrate, in addition to heat resistance of at least 250°C, it must also be strong enough to withstand the thermal stress during film formation at such high temperatures. and a substrate with appropriate surface roughness must be provided.
本発明の目的の１つは、かかる製膜時のカール防止にあ
るが、又他の目的として光電変換効率に大きな影響を及
ぼす基板の表面粗さに関し、適宜な粗面を有する基板上
に非晶質シリコン薄膜を形成した太陽電池において、高
い光電変換効率を得ることを可能ならしめる適宜な粗面
を有する基板を提供することにある。One of the purposes of the present invention is to prevent curling during film formation, but another purpose is to prevent surface roughness of the substrate, which has a large effect on photoelectric conversion efficiency. The object of the present invention is to provide a substrate having a suitably rough surface that makes it possible to obtain high photoelectric conversion efficiency in a solar cell formed with a crystalline silicon thin film.
基板の表面粗さと太陽電池の変換効率の関連性について
、変換効率を向上せしめるには、太陽電池表面の太陽光
の反射防止をすること、即ち太陽光の反射率を小さくす
ることか重要である。しか給金多数誘起させることで、
太陽電池としての特性そのものが悪くなってしまえば、
太陽電池本来の目的から逸脱してしまう。従って反射の
防止と電池特性維持等のかね合いから基板について適宜
な表面粗さを必要とするのである。Regarding the relationship between the surface roughness of the substrate and the conversion efficiency of solar cells, in order to improve the conversion efficiency, it is important to prevent the reflection of sunlight on the surface of the solar cell, that is, to reduce the reflectance of sunlight. . However, by inducing a large number of salaries,
If the characteristics of the solar cell itself deteriorate,
This deviates from the original purpose of solar cells. Therefore, the substrate needs to have an appropriate surface roughness in order to prevent reflection and maintain battery characteristics.
本発明者は非晶質シリコン薄膜全光起電力要素とする薄
膜太陽電池において非晶質シリコン薄膜を基板上に形成
させる際に熱応力に充分耐えることが出来る結果として
、カール発生を防止することを得、かつ適宜な表面粗さ
に有し、電池特性を向上せしめるという目的を達成せし
める為、鋭意努力した結果、セラミックスの紙状物又は
布状物を非晶質シリコン薄膜太陽電池用基板として使用
することで本発明の目的を達成することを得、本発明に
到達したつ
前述した如く本発明は可とう性基板上に光起電力要素と
して非晶質シリコン薄膜を設けた太陽電池において、適
度の粗面を有する可とう性セラミックス紙状物又は布状
物を基板として用いることを特徴とするものであるが１
本発明において使用するセラミックス紙状物／布状物に
ついて以下言及する。本発明に係るセラミックス紙状物
／布状物としては、該形状に成形加工できるものであれ
はセラミックスの種類において特に制限を設けるもので
ない。セラミックス紙状物／布状物の好適例として可と
う性マイカの厭状吻／布状物に関して言及する。マイカ
として例えばＭ、７（ＭＧ２．ｉ Ｌｉ 、 ７ ）Ｓ
ｉ４０！０ Ｆ２ 、ｎＨ２Ｏなる組成式を有し、Ｍが
Ｌｉ又はＫであるものは紙状物／布状物に容易に成型加
工出来る。該形状に成形加工する際には上記組成式のも
の単独であっても成型加工可能である。この様に成形加
工したものの表面状態は適当な粗面を有する。カラス繊
維を混入せしめても充分成型加工可能であるので、強度
をさらに向上せしめる為には極めて有効である。マイカ
を紙状又は布状に成型加工する時の厚みとしては５０〜
８００μ程度まで作成可能であり、又単位面積あたりの
重さとしてｌ／′ｉ５０〜２５０ ｆ／ｆｒＩの範囲に
あった。また見掛けの充填密度（ｄ６００〜１４００〜
／−であった。The present inventor has proposed that in a thin film solar cell using an amorphous silicon thin film as an all-photovoltaic element, when an amorphous silicon thin film is formed on a substrate, curling can be prevented as a result of being able to sufficiently withstand thermal stress. As a result of our earnest efforts, we have succeeded in achieving the objective of improving battery characteristics by obtaining amorphous silicon with an appropriate surface roughness. As described above, the present invention provides a solar cell in which an amorphous silicon thin film is provided as a photovoltaic element on a flexible substrate. It is characterized in that a flexible ceramic paper-like material or cloth-like material having a moderately rough surface is used as the substrate.1
The ceramic paper/cloth material used in the present invention will be mentioned below. The ceramic paper/cloth-like material according to the present invention is not particularly limited in type as long as it can be molded into the shape. As a preferred example of the ceramic paper/cloth material, a flexible mica paper/cloth material will be mentioned. As mica, for example, M, 7 (MG2.i Li, 7)S
Those having the compositional formula i40!0 F2, nH2O and in which M is Li or K can be easily molded into paper-like materials/cloth-like materials. When molding into the shape, it is also possible to mold only one having the above compositional formula. The surface of the product formed in this manner has a suitable roughness. Even if glass fiber is mixed in, it can be sufficiently molded, so it is extremely effective for further improving the strength. The thickness when molding mica into paper or cloth is 50~
It was possible to manufacture up to about 800μ, and the weight per unit area was in the range of l/'i50 to 250 f/frI. Also, the apparent packing density (d600~1400~
It was /-.
作成した膜の絶縁破壊抵抗、誘電率、比抵抗等の電気的
性質は極めて優れたものであった。The electrical properties of the produced film, such as dielectric breakdown resistance, dielectric constant, and specific resistance, were extremely excellent.
更に強度、剛性、耐熱性に関して、特に剛性、耐熱性に
ついてはセラミックスであるか故に太陽電池用可とう性
基板として一般的に応用を試みられている高分子フィル
ムに比し、極めてすぐれた特件を示す。Furthermore, in terms of strength, rigidity, and heat resistance, because it is made of ceramic, it has extremely superior properties compared to polymer films, which are commonly used as flexible substrates for solar cells. shows.
耐熱性Ｈ４００°Ｃ程度に加熱しても全く問題なく、良
質の非晶質シリコン薄膜を作成するには極めて有利であ
る。Heat Resistance H There is no problem at all even when heated to about 400°C, which is extremely advantageous for producing a high quality amorphous silicon thin film.
剛性についても耐熱性と同様、セラミックスであるため
、紙状又は布状物に成型したものについては腰があり、
非晶質シリコン製膜時の耐応力に充分耐え得るものであ
る。As for rigidity, as well as heat resistance, since it is made of ceramics, it has some stiffness when molded into paper or cloth-like materials.
It can sufficiently withstand stress during the formation of an amorphous silicon film.
可とう性マイカの紙状物／布状物を太陽電池の基板とし
て用いる為に基板表面に電極を作成する。In order to use a flexible mica paper/cloth material as a substrate for a solar cell, electrodes are created on the surface of the substrate.
電極としては特に限定するものではなく、アルミニウム
、鉄、ステンレス鋼、ニッケル、タングステン等の薄膜
を蒸着、スパッタリング、イオンブレーティング等で基
板状に形成させる。可とう性基板上に非晶質シリコン薄
膜を形成するにはグロー放電法、スパッタリング法、イ
オンブレーティング法、熱分解法等、公知の方法を用い
る１例えばグロー放電法の場合は０．１〜１０ｔｏｒｒ
［維持されだ真空槽内でロールアップされた可とう性基
板から該基板を引き出し２００〜８５０℃に加熱した基
板ホルダーに密着させる。この基板ホルダーを一方の電
極とし、これと対抗する電極との間に例えば１８．５６
ＭＨｚの高周波電力全供給する。真空槽内にはシランガ
ス（ＳｉＨ４）、シボランガス（Ｂ２Ｈ６）、ホスフィ
ンカス（ＰＨｓ）、水素カス（Ｈｇ） ｋ導入してグロ
ー放電を起こし、所定の膜厚になるまで原料ガスを供給
し、光起電力の要素である非晶質シリコン薄膜を形成さ
せる。更に詳しくは、ｎ型シリコン薄膜を作成するには
、シランガスとＨ２ガスを供給して製膜を行ない、又Ｐ
型シリコン薄膜を作成するには、シランカス、水素ガス
、ジポランガスを供給して製膜を行なう。又ｎ型シリコ
ン薄膜については、シランガス、水素ガス、ホスフィン
ガスを供給することで製膜する。次に該非晶質シリコン
薄膜を太陽電池デバイスとする為に裏面電極を形成させ
た後、Ｐ層、ｉ層、ｎ層を＠層させた可とう性基板を真
空槽内に装着し、例えばショット千−接合セルの場合は
、ショットキー障壁金属とし文、＼□
白金、金、パラジウム等をスパッタ法、真空蒸着法、イ
オンブレーティング法等で１００Ａ０程度の膜厚で堆積
させる。又ヘテロ（フェイス）接合セルの場合は、酸化
インジウム、酸化スズ、酸化スズ−酸化インジウム膜を
２００〜５０００Ａ０程度の膜厚になる様にスパッタ法
、真空蒸着法、イオンブレーティング法等で堆積させ、
表面電極を形成させる。The electrode is not particularly limited, and a thin film of aluminum, iron, stainless steel, nickel, tungsten, or the like is formed on a substrate by vapor deposition, sputtering, ion blasting, or the like. To form an amorphous silicon thin film on a flexible substrate, a known method such as a glow discharge method, a sputtering method, an ion blating method, or a thermal decomposition method is used. 10torr
[The substrate is pulled out from the flexible substrate rolled up in a maintained vacuum chamber and brought into close contact with a substrate holder heated to 200 to 850°C. This substrate holder is used as one electrode, and the distance between this and the opposing electrode is, for example, 18.56 mm.
Full supply of MHz high frequency power. Silane gas (SiH4), ciborane gas (B2H6), phosphine gas (PHs), and hydrogen gas (Hg) are introduced into the vacuum chamber to cause glow discharge, and raw material gas is supplied until a predetermined film thickness is reached, and photovoltaic Forms an amorphous silicon thin film, which is a power element. More specifically, in order to create an n-type silicon thin film, silane gas and H2 gas are supplied to form the film, and P
To create a type silicon thin film, silancus, hydrogen gas, and diporane gas are supplied to form the film. Further, the n-type silicon thin film is formed by supplying silane gas, hydrogen gas, and phosphine gas. Next, in order to use the amorphous silicon thin film as a solar cell device, a back electrode is formed, and then a flexible substrate on which the P layer, i layer, and n layer are formed is placed in a vacuum chamber, and shot, for example. In the case of a thousand-junction cell, a Schottky barrier metal such as platinum, gold, palladium, etc. is deposited to a thickness of about 100A0 by sputtering, vacuum evaporation, ion blating, or the like. In the case of a hetero (face) junction cell, an indium oxide, tin oxide, or tin oxide-indium oxide film is deposited to a film thickness of about 200 to 5000 A0 by sputtering, vacuum evaporation, ion blating, etc. ,
Form a surface electrode.
次に、収集電極をショットキー障壁金属、ヘテロフェイ
ス電極表面上に設けて非晶質シリコン太陽電池デバイス
とする。A collection electrode is then provided on the Schottky barrier metal, heteroface electrode surface to form an amorphous silicon solar cell device.
本発明になる非晶質シリコン太陽電池は、可とう性セラ
ミックスの紙状物／布状物基板上に裏面電極を形成させ
、該電極上に多層の非晶質シリコン膜を設け、その上に
ショットキー障壁金属又はヘテロフェイス電極を設け、
その上に更に収集電極を設けた基本構造を持っている。In the amorphous silicon solar cell of the present invention, a back electrode is formed on a flexible ceramic paper/cloth substrate, a multilayer amorphous silicon film is provided on the electrode, and a multilayer amorphous silicon film is provided on the back electrode. Provide a Schottky barrier metal or heteroface electrode,
It has a basic structure with a collection electrode further provided on top of it.
本発明の非晶質シリコン太陽電池は、可とう性基板とし
てセラミックスの紙状物又は布状物を用いたことに大き
な特徴を持つものであるが、この可とう性基板がセラミ
ックであることに帰因する下記の特徴を有する。The amorphous silicon solar cell of the present invention has a major feature in that a ceramic paper-like or cloth-like material is used as a flexible substrate. It has the following characteristics.
■ 剛性が大きく製膜中の熱応力に充分耐え得る。■ It has high rigidity and can withstand thermal stress during film formation.
■ 耐熱性に優れていること、即ち４００℃に加熱して
も全く問題がない。■ It has excellent heat resistance, that is, there is no problem at all even when it is heated to 400°C.
■ 強度的にも優れているが、カラス繊維を混入させる
ことで更に高強度なものが出来る。■Although it has excellent strength, it can be made even stronger by incorporating glass fiber.
■ 適宜な表面粗度を持っている為、後述の実施例に示
す如く優れた光電変換効率を得ることが出来る。(2) Since it has an appropriate surface roughness, it is possible to obtain excellent photoelectric conversion efficiency as shown in the examples below.
この様に可とう性基板としてセラミックスの紙状物／布
状物を用いることにより、ロール型状による連続的太陽
電池の製造が可能であることに加え製膜中の熱応力に耐
え得る剛性を有し、かつ適宜な表面粗さを持っているこ
とに帰因する。光電変換効率の優れた太陽電池を実現す
ることが始めて可能となった。以下実施例をあげ、本発
明を説明する。In this way, by using ceramic paper/cloth as a flexible substrate, it is possible to manufacture continuous solar cells in roll form, and it also has the rigidity to withstand thermal stress during film formation. This is due to the fact that the surface has a suitable surface roughness. For the first time, it has become possible to create solar cells with excellent photoelectric conversion efficiency. The present invention will be explained below with reference to Examples.
実施例１
組成式Ｌｉ、７（ＭＯ２，１Ｌｉ 、７） Ｓｉ４０１
０ Ｆ２ 、ｎＨ２Ｏなるマイカを紙状に成型し、厚さ
１８０μの可とり性マイカペーパを得た。Example 1 Composition formula Li, 7 (MO2, 1Li, 7) Si401
Mica consisting of 0 F2 and nH2O was molded into a paper shape to obtain a removable mica paper with a thickness of 180 μm.
このマイカペーパｆ １０ ”ｔｏｒｒの真空下で１５
０℃２■」「の乾燥を行なった。この乾燥したマイカペ
ーパをスパッタリング装置に装着し゛、タングステンを
ターケラトとして厚さ１．５μのタングステン薄膜を裏
面電極として形成させた。非晶質シリコン薄膜は容量結
合方式の高周波（１Ｂ 、 ５６Ｍ）１ｚ）グロー放電
装置を用いて、前記裏面電極を形成させた基板をクロー
放電装置のアノード例の電極上に緊張下で装着し８Ｘ１
０ ’ｔｏｒｒに排気しながら３００℃に該基板を加熱
する。その後Ｎ２ガスを５００ｃｃ／ｍｉｎ導入し、１
、ＱｔｏｒｒのＮ２ガス雰囲気で２００ｗの高周波電力
を印加し基板のイオンボンバードを２０分行ない、基板
をクリーニングする、次に水素ガスで希釈した１０％の
シランカス（ＳｉＨ４）と水素ガスで０．１％に希釈し
たホスフィンカスをグロー放電装置内に導入し、０．６
ｔｏｒｒの該ガス雰囲気で１００ｗの高周波電力を印加
し２００Ａ０のｎ型の非晶質シリコン薄膜を設ける。次
いで水素ガスとシランガスで前記同様にしてｎ型の非晶
質シリコン薄膜上にｎ型の非晶質薄膜を３００ＯＡ’の
厚みで形成させる。次いで水素カスで１０％のシランガ
ス（８ｉＨ４）と水素ガスで０．１％に希釈したジポラ
ンカスをグロー放電装置内に導入し、ｎ型非晶質シリコ
ン薄膜上に８００Ａ０のＰ型非晶質シリコン薄膜を形成
させ、可とう性マイカペーパ上にＰｉｎ型の非晶質シリ
コン薄膜を設ける。この様にして得たＰｉｎ型非型置晶
質シリコン薄膜パッタ装置に装着し酸化スズ−酸化イン
ジウム薄膜ヲ１０６０Ａ０堆積させ、ヘテロフェイス層
とした。最後にこのヘテロフェイス層上に収集電極とし
てパラジウム’ｃ １００ＯＡ’ ＜ Ｌ型に堆積させ
、可とう性マイカペーパ基板上にＰｉｎヘテロフェイス
型太陽電池デバイスを得だ。This mica paper f 10” under vacuum of 15” torr
The dried mica paper was placed in a sputtering device, and a 1.5μ thick tungsten thin film was formed as a back electrode using tungsten as a tarcerate.The amorphous silicon thin film was Using a bonding type high frequency (1B, 56M) 1z) glow discharge device, the substrate on which the back electrode was formed was mounted under tension on the electrode of the anode of the claw discharge device.
Heat the substrate to 300° C. while evacuating to 0′ torr. After that, N2 gas was introduced at 500cc/min, and
, Apply 200 W of high frequency power in a Qtorr N2 gas atmosphere to perform ion bombardment of the substrate for 20 minutes, and clean the substrate. Next, 10% silane gas (SiH4) diluted with hydrogen gas and 0.1% hydrogen gas. A phosphine gas diluted to 0.6
A high frequency power of 100 W is applied in the gas atmosphere of torr to form an n-type amorphous silicon thin film of 200 A0. Next, an n-type amorphous thin film with a thickness of 300 OA' is formed on the n-type amorphous silicon thin film using hydrogen gas and silane gas in the same manner as described above. Next, 10% silane gas (8iH4) diluted with hydrogen gas and dipolan gas diluted to 0.1% with hydrogen gas were introduced into the glow discharge device, and a P-type amorphous silicon thin film of 800A0 was formed on the n-type amorphous silicon thin film. A pin-type amorphous silicon thin film is provided on the flexible mica paper. The thus obtained pin-type amorphous crystalline silicon thin film sputtering device was installed, and a tin oxide-indium oxide thin film of 1060A was deposited to form a heteroface layer. Finally, palladium 'c 100OA'< L type was deposited as a collecting electrode on this heteroface layer to obtain a Pin heteroface type solar cell device on a flexible mica paper substrate.
実施例２
組成式に−７（ＭＧｇｙａ Ｌｉ、７）Ｓｉ４０１ｏ
Ｆ２．ｎＨｇ０なるマイカペーパに成型し、厚さ１３０
μの可とう性マイカペーパを得た。Ｐｉｎヘテロフェイ
ス型太陽電池デバイスｌ″ｉ実施例１と同様な条件で作
製した。Example 2 -7 (MGgya Li, 7)Si401o in the composition formula
F2. Molded into nHg0 mica paper, thickness 130
A flexible mica paper of μ was obtained. Pin heteroface type solar cell device l''i was produced under the same conditions as in Example 1.
実施例８
Ｌｉ 、 ｙ（ＭＧ＊、ｍ Ｌｉ 、７） Ｓｉａ Ｏ
ｓｏ Ｆｘ、ｎＨ２Ｏなるマイカにカラス繊維をマイカ
に対し２０ｗｔ％混入させペーパ状に成型し、厚み１３
０μのガラス強化のマイカペーパヲ得た。Ｐｉｎへテロ
フェイス型太陽電池は実施例１と同様な条件で作製した
。Example 8 Li, y (MG*, m Li , 7) Sia O
So Fx, nH2O mica was mixed with 20 wt% of glass fiber based on the mica and formed into a paper shape with a thickness of 13
I obtained 0μ glass-reinforced mica paper. A Pin heteroface type solar cell was produced under the same conditions as in Example 1.
実施例４
実施例１〜３の太陽電池デバイスの初期特性をＡＭ＝
１に調整したオリエル社製ソーラシュミレータで測定し
た。Example 4 The initial characteristics of the solar cell devices of Examples 1 to 3 are AM=
The measurement was performed using a solar simulator manufactured by Oriel Co., Ltd. adjusted to 1.
比較例としてポリイミドフィルムを選ひ、このフィルム
上に実施例１と同様の方法でＰｉｎ型の太陽電池デバイ
スを形成させたものを用いた。尚この測定に際しては、
太陽電池デバイス形成工程を通じて、一度もサンプルの
緊張状態を解かずに測定試料に供した。結果を第１表に
示す。As a comparative example, a polyimide film was selected, and a pin type solar cell device was formed on this film in the same manner as in Example 1. In addition, when making this measurement,
Throughout the process of forming a solar cell device, the sample was used as a measurement sample without releasing its tension even once. The results are shown in Table 1.
第１表
実施例５
実施例４で太陽電池デバイスの初期特性を、緊張状態を
１度も解かない条件下で測定した結果を示したが、本実
施例では各試料の緊張状態＝ｉ１度解いた条件下で測定
した結果を示す。Table 1 Example 5 In Example 4, the initial characteristics of the solar cell device were measured under conditions where the tension state was never resolved. However, in this example, the tension state of each sample = i1 degree solution. The results are shown below.
実施例１〜３の試料については緊張を解いてもカールは
ほとんどなく電池特性も緊張を解く前とほとんど変わら
ない結果を得たが、ポリイミドフィルムはカールが著る
しく電池特性においても。For the samples of Examples 1 to 3, there was almost no curling even after the tension was released, and the battery properties were almost the same as before the tension was released, but the polyimide film curled significantly and the battery properties also changed.
緊張を解く前Ｉ″ｉ変換効率３．２％であったものカー
２．５％に減少していた。The I''i conversion efficiency, which was 3.2% before the tension was released, had decreased to 2.5%.
特許出願人 東洋紡績株式会社Patent applicant: Toyobo Co., Ltd.
Claims (3)
る太陽電池においてセラミックスの紙状物又は布状物を
基板として使用することを特徴とする非晶質シリコン薄
膜太陽電池。(1) An amorphous silicon thin film solar cell having an amorphous silicon thin film on a flexible substrate, characterized in that a ceramic paper or cloth material is used as the substrate.
紙状又は布状に加工したものである特許請求の範囲第（
１）記載の太陽電池。(2) The paper-like or cloth-like ceramic material is obtained by processing mica into a paper-like or cloth-like form (Claim No. 2)
1) The solar cell described above.
クスにガラス繊維を混入せしめ紙状又は布状に加工した
ものである特許請求の範囲第（１）項記載の太陽電池。(3) The solar cell according to claim (1), wherein the paper-like or cloth-like ceramic material is obtained by mixing ceramics with glass fibers and processing them into a paper-like or cloth-like material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57229996A JPS59119878A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57229996A JPS59119878A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59119878A true JPS59119878A (en) | 1984-07-11 |
| JPH059947B2 JPH059947B2 (en) | 1993-02-08 |
Family
ID=16900963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57229996A Granted JPS59119878A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119878A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005106968A1 (en) * | 2004-04-28 | 2005-11-10 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
| WO2006087914A1 (en) * | 2005-02-16 | 2006-08-24 | Honda Motor Co., Ltd. | Chalcopyrite solar cell and manufacturing method thereof |
| WO2006126590A1 (en) * | 2005-05-24 | 2006-11-30 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
| JP2007035921A (en) * | 2005-07-27 | 2007-02-08 | Honda Motor Co Ltd | Chalcopyrite solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861678A (en) * | 1981-10-08 | 1983-04-12 | Taiyo Yuden Co Ltd | Amorphous silicon solar battery |
-
1982
- 1982-12-27 JP JP57229996A patent/JPS59119878A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861678A (en) * | 1981-10-08 | 1983-04-12 | Taiyo Yuden Co Ltd | Amorphous silicon solar battery |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005106968A1 (en) * | 2004-04-28 | 2005-11-10 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
| JP2005317728A (en) * | 2004-04-28 | 2005-11-10 | Honda Motor Co Ltd | Chalcopyrite solar cell |
| US7663056B2 (en) | 2004-04-28 | 2010-02-16 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
| JP4695850B2 (en) * | 2004-04-28 | 2011-06-08 | 本田技研工業株式会社 | Chalcopyrite solar cell |
| DE112005000948B4 (en) * | 2004-04-28 | 2012-07-12 | Honda Motor Co., Ltd. | Chalcopyrite-type solar cell with a mica-containing insulating substrate |
| WO2006087914A1 (en) * | 2005-02-16 | 2006-08-24 | Honda Motor Co., Ltd. | Chalcopyrite solar cell and manufacturing method thereof |
| WO2006126590A1 (en) * | 2005-05-24 | 2006-11-30 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
| JP2006332190A (en) * | 2005-05-24 | 2006-12-07 | Honda Motor Co Ltd | Chalcopyrite solar cell |
| JP4681352B2 (en) * | 2005-05-24 | 2011-05-11 | 本田技研工業株式会社 | Chalcopyrite solar cell |
| US7964791B2 (en) | 2005-05-24 | 2011-06-21 | Honda Motor Co., Ltd. | Chalcopyrite type solar cell |
| JP2007035921A (en) * | 2005-07-27 | 2007-02-08 | Honda Motor Co Ltd | Chalcopyrite solar cell |
| JP4646724B2 (en) * | 2005-07-27 | 2011-03-09 | 本田技研工業株式会社 | Chalcopyrite solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH059947B2 (en) | 1993-02-08 |
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