JPS59119353A - フオトマスクブランク - Google Patents
フオトマスクブランクInfo
- Publication number
- JPS59119353A JPS59119353A JP57228916A JP22891682A JPS59119353A JP S59119353 A JPS59119353 A JP S59119353A JP 57228916 A JP57228916 A JP 57228916A JP 22891682 A JP22891682 A JP 22891682A JP S59119353 A JPS59119353 A JP S59119353A
- Authority
- JP
- Japan
- Prior art keywords
- chromium
- layer
- photomask blank
- oxidation degree
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 37
- 239000011651 chromium Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 5
- 230000006866 deterioration Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/88—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by photographic processes for production of originals simulating relief
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228916A JPS59119353A (ja) | 1982-12-27 | 1982-12-27 | フオトマスクブランク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228916A JPS59119353A (ja) | 1982-12-27 | 1982-12-27 | フオトマスクブランク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59119353A true JPS59119353A (ja) | 1984-07-10 |
| JPS6230624B2 JPS6230624B2 (enrdf_load_stackoverflow) | 1987-07-03 |
Family
ID=16883860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57228916A Granted JPS59119353A (ja) | 1982-12-27 | 1982-12-27 | フオトマスクブランク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119353A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62293511A (ja) * | 1986-06-12 | 1987-12-21 | Sumitomo Special Metals Co Ltd | 磁気記録媒体 |
| WO2009123170A1 (ja) * | 2008-03-31 | 2009-10-08 | Hoya株式会社 | フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法 |
| WO2009123171A1 (ja) * | 2008-03-31 | 2009-10-08 | Hoya株式会社 | フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法 |
| JP2016105158A (ja) * | 2014-11-20 | 2016-06-09 | Hoya株式会社 | フォトマスクブランク及びそれを用いたフォトマスクの製造方法、並びに表示装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022160364A (ja) | 2021-04-06 | 2022-10-19 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びフォトマスク |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50109672A (enrdf_load_stackoverflow) * | 1974-02-02 | 1975-08-28 | ||
| JPS5752070A (en) * | 1980-09-16 | 1982-03-27 | Hitachi Ltd | Multilayer liquid crystal display element |
| JPS5773741A (en) * | 1980-10-24 | 1982-05-08 | Toppan Printing Co Ltd | Photomask |
-
1982
- 1982-12-27 JP JP57228916A patent/JPS59119353A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50109672A (enrdf_load_stackoverflow) * | 1974-02-02 | 1975-08-28 | ||
| JPS5752070A (en) * | 1980-09-16 | 1982-03-27 | Hitachi Ltd | Multilayer liquid crystal display element |
| JPS5773741A (en) * | 1980-10-24 | 1982-05-08 | Toppan Printing Co Ltd | Photomask |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62293511A (ja) * | 1986-06-12 | 1987-12-21 | Sumitomo Special Metals Co Ltd | 磁気記録媒体 |
| WO2009123170A1 (ja) * | 2008-03-31 | 2009-10-08 | Hoya株式会社 | フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法 |
| WO2009123171A1 (ja) * | 2008-03-31 | 2009-10-08 | Hoya株式会社 | フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法 |
| US8304147B2 (en) | 2008-03-31 | 2012-11-06 | Hoya Corporation | Photomask blank, photomask, and method for manufacturing photomask blank |
| US8507155B2 (en) | 2008-03-31 | 2013-08-13 | Hoya Corporation | Photomask blank, photomask, and method for manufacturing photomask blank |
| JP5562835B2 (ja) * | 2008-03-31 | 2014-07-30 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法 |
| JP5562834B2 (ja) * | 2008-03-31 | 2014-07-30 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法 |
| US9075314B2 (en) | 2008-03-31 | 2015-07-07 | Hoya Corporation | Photomask blank, photomask, and method for manufacturing photomask blank |
| JP2016105158A (ja) * | 2014-11-20 | 2016-06-09 | Hoya株式会社 | フォトマスクブランク及びそれを用いたフォトマスクの製造方法、並びに表示装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6230624B2 (enrdf_load_stackoverflow) | 1987-07-03 |