JPS59116536A - Humidity sensor - Google Patents

Humidity sensor

Info

Publication number
JPS59116536A
JPS59116536A JP57231824A JP23182482A JPS59116536A JP S59116536 A JPS59116536 A JP S59116536A JP 57231824 A JP57231824 A JP 57231824A JP 23182482 A JP23182482 A JP 23182482A JP S59116536 A JPS59116536 A JP S59116536A
Authority
JP
Japan
Prior art keywords
ceramic body
humidity sensor
humidity
electrode
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57231824A
Other languages
Japanese (ja)
Other versions
JPS6313146B2 (en
Inventor
Riyouichi Makimoto
牧元 良一
Fumio Fukushima
二三夫 福島
Hiromitsu Tagi
多木 宏光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57231824A priority Critical patent/JPS59116536A/en
Publication of JPS59116536A publication Critical patent/JPS59116536A/en
Publication of JPS6313146B2 publication Critical patent/JPS6313146B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/121Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid

Abstract

PURPOSE:To stabilize temporal change and humidity response and to improve reliability in humidity characteristics, by controlling the average diameter of pores and the porosity of an electrode material and a raw ceramic body used in a porous ceramic humidity sensor. CONSTITUTION:A P type semiconductor metal oxide raw ceramic body has a porosity in the range of 20-40% and average pore diameter in the range of 0.01-1mum. In this ceramic body, a ruthenium oxide porous electrode, which has an average pore diameter in the range of 0.01-1mum, is provided. A humidity sensor having this constitution is formed, e.g., by the following procedure: by using MgCr2O4-TiO2 series P type semiconductor ceramic humidity sensor material, compounding, mixing, temporary burning, and grinding are sequentially performed according to an ordinary ceramic industry method; a binder is added and granulation is performed; granulated powder is formed into a plate shape and burned and the raw ceramic body is formed; an electrode paste, which includes ruthenium oxide powder having the granule diameter of about 0.01-1mum and glass frit, is applied on both sides of the raw ceramic body by screen printing and burned; and the ruthenium oxide electrode is obtained.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電子レンジ等の食品調理機器やエアコン等の空
調機器、湿度制御システム等に使用される湿度センサに
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a humidity sensor used in food cooking equipment such as microwave ovens, air conditioning equipment such as air conditioners, humidity control systems, and the like.

従来例の構成とその問題点 従来から用いられている電気式感湿素子には、塩化リチ
ウム(LiC1)等の電解質材料を使用したもの、単結
晶の表面に酸化膜を形成したもの。
Conventional configurations and their problems Conventionally used electric moisture sensing elements include those that use electrolyte materials such as lithium chloride (LiC1), and those that have an oxide film formed on the surface of a single crystal.

親水性有機高分子に炭素を分散させたもの、金属を表面
酸化させたもの、コロイド膜を用い/ともの。
Those with carbon dispersed in hydrophilic organic polymers, those with surface oxidized metals, and those using/with colloidal membranes.

あるいは金属酸化物系多孔質体を使用した素子がある。Alternatively, there is an element using a metal oxide porous material.

とれらはいずれも湿度変化を電気量変化として検知する
ものであるが、それぞれに大きな問題が残されている。
All of these methods detect changes in humidity as changes in the amount of electricity, but each has major problems.

たとえば、電解質拐祠は結露状態において水に溶出し、
不安定なものであり、信頼性に問題のあるものである。
For example, electrolyte water dissolves into water under condensation,
It is unstable and has reliability problems.

−!j、だ、単結晶を使用したものはコスト高であり、
汚れに弱い。有機高分子を使用したものは応答性が悪い
ものであり、さらに蒸着膜を用いたものは互換性が悪く
、膜の安定化に長時間を要し、特性が不安定なものであ
る。
-! j, da, those using single crystal are expensive,
Not resistant to dirt. Those using organic polymers have poor responsiveness, and those using vapor-deposited films have poor compatibility, require a long time to stabilize the film, and have unstable characteristics.

金属酸化物多孔質体にA1203 、 Cr2 o3 
、あるいはNi2O3を用いたものには上述のような欠
点は実質的にないが、その反面、全般的に抵抗が高く、
実際に使用するには困輸なものであるばかりでなく、汚
れに対して弱いという問題をもつものであり、それぞれ
共通している問題として汚れによる特性劣化がある。そ
れらを解決するために金属酸化物系多孔質セラミックで
は、外部或いは表面から加熱し、汚れを除去する方法が
とられている。
A1203, Cr2 o3 in metal oxide porous body
, or those using Ni2O3 have virtually no drawbacks as described above, but on the other hand, they generally have high resistance,
Not only are they difficult to use in practice, but they also have the problem of being susceptible to dirt, and a common problem with each of them is deterioration of characteristics due to dirt. To solve these problems, metal oxide porous ceramics are heated from the outside or from the surface to remove dirt.

逼 しかし、非常に轡酷な条件下においては若干の経fl’
7変化を示す。寸だ、電極の平均気孔径、セラミック素
子の気孔率、平均気孔径を小さくすれば、ノj命的に(
d良好になって行くが、応答性が遅くなるという問題が
発生して来る。
However, under very harsh conditions, some
7 shows changes. If you reduce the average pore diameter of the electrode, the porosity of the ceramic element, and the average pore diameter, it will be fatal (
d is getting better, but a problem arises in that the response becomes slow.

発明の「1的 本発明は上述の問題を解決し、応答性がよく、経時変化
が少々く、長寿命の湿度センサを捉供しようとするもの
である。
``One aspect of the invention'' The present invention solves the above-mentioned problems and provides a humidity sensor that has good responsiveness, little change over time, and has a long life.

発明の構成 本発明は、多孔質セラミック湿度センサの電極材料とセ
ラミック素体の平均気孔径と気孔率をコン)ロールする
ことにより、湿度特性に有害な無機物や有機物等がセラ
ミック素体内に侵入することを防止して、上記の目的を
達成したものである。
Structure of the Invention The present invention prevents inorganic and organic substances harmful to humidity characteristics from penetrating into the ceramic body by controlling the average pore diameter and porosity of the electrode material and ceramic body of a porous ceramic humidity sensor. The above purpose has been achieved by preventing this.

すなわち、本発明では、酸化ルテニウム電極の表面に小
さな径の気孔を設けることで汚染による特性の劣化を軽
減し、まだ電極をセラミック素体上に設けることで、さ
らに寿命特性が向上し、さらにセラミック素体のブレー
ンサイズを小さくしたことにより、粒界面積が増加し、
センサ抵抗値の低下を可能とし、回路的にも使いやすく
している。
That is, in the present invention, by providing small-diameter pores on the surface of the ruthenium oxide electrode, deterioration of characteristics due to contamination is reduced, and by providing the electrode on the ceramic body, the life characteristics are further improved. By reducing the brane size of the element body, the grain boundary area increases,
This makes it possible to lower the sensor resistance value and makes the circuit easier to use.

実施例の説明 MgCr204−TlO2系P型半導体セラミック湿度
センサ用+A刺を使用し、通常の窯業的手法に従い、配
合、混合、仮焼、粉砕を順次行なってから、バインダー
を添加して造粒した。この造粒粉末を750 kg/c
4 tD正圧力4 mM X 47/IJff X 0
.25 mmの寸法の板状に成形し、空気中にて110
00Cから13000Cまでの範囲内の温度で2時間焼
成し、セラミック素体とした。このセラミック素体の両
面に約0.01μmから1μmまでの粒径の酸化ルテニ
ウム粉末とガラスフリットとを含む電極ペーストをスク
リーン印刷で10〜3Qμmの厚みに塗布し、750毛
から900°Cの範囲内の温度で焼き付けて、酸化ルテ
ニウム電極を形成した。
Description of Examples Using MgCr204-TlO2-based P-type semiconductor ceramic humidity sensor +A barbs, blending, mixing, calcination, and pulverization were performed in sequence according to the usual ceramic method, and then a binder was added and granulated. . 750 kg/c of this granulated powder
4 tD positive pressure 4 mM x 47/IJff x 0
.. Form it into a plate shape with a size of 25 mm and heat it in air for 110 minutes.
The ceramic body was fired for 2 hours at a temperature ranging from 00C to 13000C. An electrode paste containing ruthenium oxide powder with a particle size of about 0.01 μm to 1 μm and glass frit is applied to both sides of this ceramic body to a thickness of 10 to 3 Q μm by screen printing, and the temperature ranges from 750°C to 900°C. A ruthenium oxide electrode was formed by baking at a temperature of

これらのセラミック素体と酸化ルテニウム電極の気孔率
、平均気孔径と経時変化率をそれぞれ第1表、第2表に
示す。さらにセラミック素体と酸化ルテニウム電極の相
乗効果を平均気孔径と経時変化率について第3表に示す
。なお、湿度応答性は、温度20°Cにおいて、相対湿
度を10%から50%に変えた時と同じく90%から5
0%に変えた時の平fMiに達する寸での時間で示して
いる。
The porosity, average pore diameter, and rate of change over time of these ceramic bodies and ruthenium oxide electrodes are shown in Tables 1 and 2, respectively. Furthermore, Table 3 shows the synergistic effect of the ceramic body and the ruthenium oxide electrode in terms of average pore diameter and rate of change over time. In addition, the humidity response is the same as when changing the relative humidity from 10% to 50% at a temperature of 20°C.
The time taken to reach the normal fMi when changed to 0% is shown.

丑だ、ノテイ11テストは素子温度を54000に10
秒間保持して、汚染物質を焼却し、次の10秒間を常温
に保持するという温度サイクル(クリーニングサイクル
)を加えることによって行ない、それによる素子抵抗の
変化率を寿命変化率とした。
Ushi, note 11 test is 10 to 54000 element temperature
This was carried out by adding a temperature cycle (cleaning cycle) in which the temperature was maintained for 1 second to incinerate the contaminants, and the temperature was then maintained at room temperature for the next 10 seconds, and the rate of change in element resistance due to this was defined as the rate of change in life.

(以下余白) 第1表:セラミック素体 第2表二酸化ルテニウム電極 第3表:セラミック素体と酸化ルテニウム電極との相乗
効果 上表の結果から明らかなように、セラミック素体と酸化
ルテニウム電極の平均気孔径が0.01〜1μmの範囲
内にあり、かつセラミック素体の気孔率が20〜40%
の範囲内にある湿度センサが湿度応答性、経時変化とも
に良好である。
(Leaving space below) Table 1: Ceramic body Table 2 Ruthenium dioxide electrode Table 3: Synergistic effect between ceramic body and ruthenium oxide electrode As is clear from the results in the above table, The average pore diameter is within the range of 0.01 to 1 μm, and the porosity of the ceramic body is 20 to 40%.
Humidity sensors within this range have good humidity responsiveness and change over time.

発明の効果 以上の説明から明らかなように、本発明の湿度センサ(
徒、湿度抵抗特性が過酷な雰囲気において、経時変化、
湿度応答性か安定しているので、湿度特性の信頼性が高
く、湿度測定装置や湿度メータ等の装置に容易に使用で
きるものである。
Effects of the Invention As is clear from the above explanation, the humidity sensor of the present invention (
In an atmosphere with harsh humidity resistance characteristics, changes over time,
Since the humidity response is stable, the humidity characteristics are highly reliable and can be easily used in devices such as humidity measuring devices and humidity meters.

Claims (1)

【特許請求の範囲】[Claims] 気孔率が20%から40%までの範囲にあって平均気孔
径が0.01μmから1μmまでの範囲にあるP型半心
体金(似酸化物セラミック素体に平均気孔径が0.01
μ7nから1μm〜までの範囲内にある酸化ルテニウム
多孔質°電極を設けてなるを特徴とする湿度センサ。
P-type semi-core gold with a porosity in the range of 20% to 40% and an average pore diameter in the range of 0.01 μm to 1 μm (similar oxide ceramic body with an average pore diameter of 0.01 μm)
A humidity sensor comprising a porous electrode made of ruthenium oxide having a diameter ranging from μ7n to 1 μm.
JP57231824A 1982-12-24 1982-12-24 Humidity sensor Granted JPS59116536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57231824A JPS59116536A (en) 1982-12-24 1982-12-24 Humidity sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57231824A JPS59116536A (en) 1982-12-24 1982-12-24 Humidity sensor

Publications (2)

Publication Number Publication Date
JPS59116536A true JPS59116536A (en) 1984-07-05
JPS6313146B2 JPS6313146B2 (en) 1988-03-24

Family

ID=16929589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57231824A Granted JPS59116536A (en) 1982-12-24 1982-12-24 Humidity sensor

Country Status (1)

Country Link
JP (1) JPS59116536A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0751539A2 (en) * 1995-06-29 1997-01-02 Murata Manufacturing Co., Ltd. Positive characteristics thermistor device
EP0779630A1 (en) * 1995-12-13 1997-06-18 Murata Manufacturing Co., Ltd. Positive characteristic thermistor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112494U (en) * 1977-02-15 1978-09-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112494U (en) * 1977-02-15 1978-09-07

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0751539A2 (en) * 1995-06-29 1997-01-02 Murata Manufacturing Co., Ltd. Positive characteristics thermistor device
EP0751539A3 (en) * 1995-06-29 1997-05-28 Murata Manufacturing Co Positive characteristics thermistor device
US5790011A (en) * 1995-06-29 1998-08-04 Murata Manufacturing Co., Ltd. Positive characteristics thermistor device with a porosity occupying rate in an outer region higher than that of an inner region
EP0779630A1 (en) * 1995-12-13 1997-06-18 Murata Manufacturing Co., Ltd. Positive characteristic thermistor device
US5907271A (en) * 1995-12-13 1999-05-25 Murata Manufacturing Co., Ltd. Positive characteristic thermistor device

Also Published As

Publication number Publication date
JPS6313146B2 (en) 1988-03-24

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