JPS59114859A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS59114859A
JPS59114859A JP57224151A JP22415182A JPS59114859A JP S59114859 A JPS59114859 A JP S59114859A JP 57224151 A JP57224151 A JP 57224151A JP 22415182 A JP22415182 A JP 22415182A JP S59114859 A JPS59114859 A JP S59114859A
Authority
JP
Japan
Prior art keywords
layer
metal silicide
semiconductor device
semiconductor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57224151A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0423428B2 (enrdf_load_stackoverflow
Inventor
Shoichi Kagami
正一 各務
Kazuhiko Hashimoto
一彦 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57224151A priority Critical patent/JPS59114859A/ja
Publication of JPS59114859A publication Critical patent/JPS59114859A/ja
Publication of JPH0423428B2 publication Critical patent/JPH0423428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57224151A 1982-12-21 1982-12-21 半導体装置およびその製造方法 Granted JPS59114859A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57224151A JPS59114859A (ja) 1982-12-21 1982-12-21 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57224151A JPS59114859A (ja) 1982-12-21 1982-12-21 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS59114859A true JPS59114859A (ja) 1984-07-03
JPH0423428B2 JPH0423428B2 (enrdf_load_stackoverflow) 1992-04-22

Family

ID=16809336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57224151A Granted JPS59114859A (ja) 1982-12-21 1982-12-21 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS59114859A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812889A (en) * 1985-09-24 1989-03-14 Kabushiki Kaisha Toshiba Semiconductor device FET with reduced energy level degeneration
US6043544A (en) * 1997-01-30 2000-03-28 Advanced Micro Devices, Inc. Semiconductor gate conductor with a substantially uniform doping profile having minimal susceptibility to dopant penetration into the underlying gate dielectric

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812889A (en) * 1985-09-24 1989-03-14 Kabushiki Kaisha Toshiba Semiconductor device FET with reduced energy level degeneration
US6043544A (en) * 1997-01-30 2000-03-28 Advanced Micro Devices, Inc. Semiconductor gate conductor with a substantially uniform doping profile having minimal susceptibility to dopant penetration into the underlying gate dielectric

Also Published As

Publication number Publication date
JPH0423428B2 (enrdf_load_stackoverflow) 1992-04-22

Similar Documents

Publication Publication Date Title
EP0123936B1 (en) Semiconductor device
KR920010131B1 (ko) 반도체 소자 및 그 제조 방법
Snoeys et al. A new NMOS layout structure for radiation tolerance
EP1361614B1 (en) Semiconductor device manufacturing method
US5661046A (en) Method of fabricating BiCMOS device
KR20000005452A (ko) 실리콘카바이드cmos및?그제조방법
JPS6072272A (ja) 半導体装置の製造方法
WO1997039485A9 (en) Silicon carbide cmos and method of fabrication
JPH0758701B2 (ja) 半導体装置の製造方法
US5147814A (en) Method of manufacturing an lddfet having an inverted-t shaped gate electrode
US5107321A (en) Interconnect method for semiconductor devices
US5231042A (en) Formation of silicide contacts using a sidewall oxide process
US6001677A (en) Method for fabricating CMOS transistors by implanting into polysilicon
JPS6225452A (ja) Ｃｍｏｓトランジスタの製造法
US4812889A (en) Semiconductor device FET with reduced energy level degeneration
JPS59114859A (ja) 半導体装置およびその製造方法
JPH0276255A (ja) 短いゲート長さを有するｃｍｏｓデバイスの製造方法
JP2817518B2 (ja) 半導体装置およびその製造方法
JP2000216108A (ja) 半導体装置の製造方法
JPS6194370A (ja) 半導体装置の製造方法
JPS6165470A (ja) 半導体集積回路装置
RU2298856C2 (ru) Способ изготовления мдп-транзистора на структуре кремний на сапфире
JPS63255964A (ja) 半導体装置
JPS63283155A (ja) 半導体装置およびその製造方法
JPS59138363A (ja) 半導体装置及びその製造方法