JPS59111378A - Photo coupler - Google Patents
Photo couplerInfo
- Publication number
- JPS59111378A JPS59111378A JP57221477A JP22147782A JPS59111378A JP S59111378 A JPS59111378 A JP S59111378A JP 57221477 A JP57221477 A JP 57221477A JP 22147782 A JP22147782 A JP 22147782A JP S59111378 A JPS59111378 A JP S59111378A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor element
- lead
- lead wire
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000007789 sealing Methods 0.000 claims description 5
- 230000004907 flux Effects 0.000 abstract description 2
- 229910001111 Fine metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】 イ）産業上の利用分野 本発明は製造し易ぐ光伝達のよい光結合器に関する。[Detailed description of the invention] b) Industrial application field The present invention relates to an optical coupler that is easy to manufacture and has good light transmission.
口）従来技術
従来リード線を用いた光結合器は第１図（ａ）に示す様
にリード線間（財）の頂部に光半導体素子（２１１＠を
載置するか、又は第１図（ｂ）に示すように折９曲げた
リード線關（財）の側面に光半導体素子（３１）（ハ）
を載置して、いずれも光半導体素子ｔ２１１（２２１’
３１１ｔ３２１が対向するように配置していた。(1) Prior art In the conventional optical coupler using lead wires, an optical semiconductor element (211@) is placed on the top between the lead wires as shown in FIG. 1(a), or As shown in b), the optical semiconductor element (31) (c) is placed on the side of the lead wire that is bent 9 times.
are mounted, and both optical semiconductor elements t211 (221'
311 and 321 were arranged to face each other.
しかし乍らいずれの場合においても光半導体素子シ１１
（２２１θ１１ （３２１に配線する金属細線（２５
）（３）□□□（３情の取扱が面倒で、これが互いに接
触しないように近接させるのは細心の注意を要する。即
ち前者の場合には１枚の板から得られたリードフレーム
の中央部附近において載置配線する事は出来ないから、
２枚のリードフレームにそれぞれ載置配線してそれを水
平に保持し樹脂モールドするので、金属細線（２５１（
２５）はいずれもリード線［２３ｉ ２ａの略中心線上
であるから、光伝達効率を上げようとして近づければ近
づけるだけ接触しやすくなる。一方後者の場合、やはり
リードフレームを用いて量産効果を上げようとすると光
半導体素子（３ｎ（ａ２ｆ枝置配線してからリード線（
３３）（財）を折り曲げ、対向させるので金属細線ｍ［
９＋３５１が切れやすく、これをさけるため組リードフ
レームを用いると口ｒ述の如く金属細線瞥（石同志が接
触しやすい。However, in either case, the optical semiconductor element 11
(221θ11 (Thin metal wire wired to 321 (25
) (3) □□□ (The handling of the three parts is troublesome, and great care must be taken to place them close together so that they do not touch each other. In other words, in the former case, the center of the lead frame obtained from one board is Because it is not possible to install wiring near the department,
The wires are mounted on two lead frames, held horizontally, and resin molded, so thin metal wires (251 (
25) are all approximately on the center line of the lead wire [23i 2a, so the closer they are to each other in order to increase the light transmission efficiency, the easier they will come into contact. On the other hand, in the case of the latter, if you try to increase the mass production effect by using a lead frame, you will need to install optical semiconductor elements (3n (a2f) branch wiring and then lead wires (
33) Fold the (goods) and make them face each other, so the thin metal wire m [
9+351 is easy to break, and to avoid this, if you use an assembled lead frame, as mentioned above, the metal thin wires (stones are likely to come into contact with each other).
〕１）発明の目的
本発明は上述の点を考慮してなされたもので、以下大発
明を英飾例に基づいて詳細に説明する。1) Purpose of the Invention The present invention has been made in consideration of the above points, and the invention will be explained in detail below based on examples of English decorations.
実施例
８２因は本発明＠施例の光結合器の断面図で、ｆｌｌｆ
２１１４光半導体素子で、例えば光半導体素子（１）は
ＧａＡｓからなる発光ダイオードでリード線（３）の頂
部にｉ！九開固着れており、−分光半導体素子（２）は
Ｓｌからなるフォトトランジスタでリード線（４）の端
部側面に載置固着されている○そしてこれらの光半導体
素子（ｉｌ １２１は金属ａｌ線ｉ５１ （５１で配線
ケ施こしたのち互い（τ近接するように配置されている
。（６）ｉｊ：光半導体素子＋１１ ［２＋を覆う遮光
性の封止体で、その内部（７）は中空になっているか又
は透光性樹脂が充填しである。Example 82 is a cross-sectional view of the optical coupler of the present invention@example, fllf
In the 2114 optical semiconductor device, for example, the optical semiconductor device (1) is a light emitting diode made of GaAs, and the i! - The spectroscopic semiconductor element (2) is a phototransistor made of Sl and is placed and fixed on the end side of the lead wire (4). After wiring is done with line i51 (51, they are arranged so as to be close to each other (τ). (6) ij: A light-shielding sealing body that covers the optical semiconductor element +11 [2+, and inside (7) It is either hollow or filled with translucent resin.
上述の光結合器は次のようにして製造される。The optical coupler described above is manufactured as follows.
１ず第３図（ａｌに示すような記１のリテーナ（８）か
ら一方間にリード線＋３１＋３１・・・が突出したより
な片持梁型のリードフレームのリード線（３１（３）・
・頂面に、光半導体素子（１１（１１・・・を躯置固獲
し、金ＪＥｉ細線ｆ５１１５）・・で配線する。次に第
６図（ｂ）に示すような第２のリテーナ（９）からリー
ド線１４１ ＋４１・・が突出したリードフレームのリ
ード線（４１＋４１・・・の側面に、光半導体素子＋２
１ｆ２１・・・を載置固着し、金属細線＋５１ ＋５１
・・・で配線する。1. Lead wires (31(3),
・On the top surface, wire the optical semiconductor element (11 (11...) in place and wire it with gold JEi thin wire f5115). Next, attach the second retainer (11...) as shown in FIG. 9) from which the lead wires 141 +41... protrude. On the side of the lead wires (41+41...), the optical semiconductor element +2
Place and fix 1f21..., metal thin wire +51 +51
Wire with...
これらの工程で光半導体素子＋１１ （１１・・・＋２
１ ＋２１・・・の載置面上方は開放されているので作
業しゃすいＯこれらのリードフレームを重ねるのである
が、光半導体素子＋２１ Ｆ２１・・・を載置している
リードフレームの支持線（４′＋ ＋４’ｌを延長して
第６のリテーナ１１０）を設け、この第３のリテーナ１
１０１と第１のリテーナ（８）を重ねればよい。これは
単なるリードフレームの位置決めではなく、光半導体素
子＜１１ ＋１＋・・・はリード線（３１（３ｉ・・・
の中心線上に中心をもち光半導体素子＋２１ ＋２１・
・・はリード線＋４１ （４１・・・の上方に中心を配
置しているので、上述のようにリードフレームを重ねる
とリード線の厚み分光半導体素子＋１１ ＋１１・・・
の中心がもち上がる０従って光半導体素子（１１＋１１
・・・１２１ （２１）５・を光束中心をあわせながら
配置でき、しかもこの時金属細線＋５１１５１・・・は
互いに略直父する平面内にくるので充分近接できる。そ
の後トランスファモールド、射出成型等で樹脂モールド
するか又は皿状の成型品を貼り合わせるなどして封止体
（６）全形成し、リテーナ（８）＋９１ （１０１等を
切断除去する。In these steps, the optical semiconductor element +11 (11...+2
The upper part of the mounting surface of 1 +21... is open, so it is easy to work with these lead frames. 4'+ +4'l is extended to provide a sixth retainer 110), and this third retainer 1
101 and the first retainer (8) may be overlapped. This is not just positioning of the lead frame, but the optical semiconductor element <11 +1+... is the lead wire (31 (3i...
An optical semiconductor element whose center is on the center line of +21 +21・
... is centered above the lead wire +41 (41...), so when the lead frames are overlapped as described above, the thickness of the lead wire is +11 +11...
The center of 0 is raised, so the optical semiconductor element (11+11
. . 121 (21) 5. can be arranged with the centers of the luminous fluxes aligned, and at this time, the thin metal wires +51151 . . . are in substantially direct planes with each other, so they can be sufficiently close to each other. Thereafter, the entire sealing body (6) is formed by resin molding using transfer molding, injection molding, etc., or by bonding plate-shaped molded products together, and the retainer (8) +91 (101, etc.) is cut and removed.
尚上述の例において光半導体素子＋１１＋２１は発光ダ
イオードが表面から光を放出する場合は発光ダイオード
をリード線（３）の頂部におくのがよいｏしかし底面に
略平行なｈ接合をもつ発光ダイオードと表面に拡散受光
面をもつフォトトランジスタ（又はフォトダイオード）
との組合せを用いる場合には発光ダイオードをリード線
の側面に、受光素子をリード線の頂面にそれぞれ配置す
るとよい。In the above example, if the light emitting diode emits light from the surface of the optical semiconductor device +11+21, it is preferable to place the light emitting diode at the top of the lead wire (3). Phototransistor (or photodiode) with a diffused light-receiving surface on the surface
When using a combination of the above, it is preferable to arrange the light emitting diode on the side surface of the lead wire and the light receiving element on the top surface of the lead wire.
また第４図は本発明の他の実施例の光結合器の断面図で
、第２図と対応するところには同じ番号が付しであるが
、リード線日の頂部に発光ダイオードからなる光半導体
素子ａ１１’＋載置するとき、リード線［１３１の載置
部をヘッダ加工したり金属箔を熱圧着するなどして凹状
に形成しておくと光伝達効率がよくなる。FIG. 4 is a sectional view of an optical coupler according to another embodiment of the present invention, in which the same numbers are attached to the parts corresponding to those in FIG. When mounting the semiconductor element a11'+, light transmission efficiency is improved if the mounting part of the lead wire [131 is formed into a concave shape by processing the mounting part of the lead wire [131] into a header or by thermocompression bonding with metal foil.
ホ）発明の効果
本発明は上述の如く頂部に第１の光半導体素子を載置し
た第１のリード線と、側面に第２の光半導体素子を載置
し、第１の光半導体素子と第２の光半導体素子が互いに
近接するように配置した第２のリード線と、第１第２の
光半導体素子を覆う封止体を具備した光結合器であるか
ら、素子の載置配線が容易で、しかも配線の事故を留意
する事なく発光素子の発光部と受光素子の受光部を近接
させる事かできるので、製造しやすく光伝達もよい０E) Effects of the Invention As described above, the present invention includes a first lead wire with a first optical semiconductor element mounted on the top, a second optical semiconductor element mounted on the side surface, and a first lead wire with a first optical semiconductor element mounted on the top. Since the optical coupler includes a second lead wire arranged so that the second optical semiconductor elements are close to each other, and a sealing body that covers the first and second optical semiconductor elements, the mounting wiring of the element can be easily adjusted. It is easy to manufacture and has good light transmission because the light emitting part of the light emitting element and the light receiving part of the light receiving element can be brought close to each other without worrying about wiring accidents.
第１図（ａｔ（ｂ）は従来の光結合器の断面図第２図は
本発明実施例の光結合器の断面図、第３図（ａ＞（ｂｌ
は第２図の光結合器を製造する時に用いるリードフレー
ムの平面図、第４図は本発明の他の実症例の光結合器の
断面図である。
（１１Ｆ２１ ｆｕｌｌ・・・光半導体素子、＋３１
＋４１１１３１・・・リード線、（５）（５）・・・・
・・金属細線、（６）・・・封止体。FIG. 1 (at(b) is a cross-sectional view of a conventional optical coupler; FIG. 2 is a cross-sectional view of an optical coupler according to an embodiment of the present invention; FIG. 3 (a>(b)
2 is a plan view of a lead frame used in manufacturing the optical coupler shown in FIG. 2, and FIG. 4 is a sectional view of another actual example of the optical coupler of the present invention. (11F21 full...optical semiconductor element, +31
+411131... Lead wire, (5) (5)...
...Thin metal wire, (6)...Sealing body.
Claims (1)
線と、側面に第２の光半導体素子を載置し、第１の光半
導体素子と第２の光半導体素子とが互いに近接するよう
に配置した第２のリード線と、第１第２の光半導体素子
を俺う封止体を具備した事を特徴とする光結合器。1) A first lead wire with a first optical semiconductor element mounted on the top and a second optical semiconductor element mounted on the side, and the first optical semiconductor element and the second optical semiconductor element are connected to each other. An optical coupler characterized by comprising a second lead wire arranged close to each other and a sealing body that connects the first and second optical semiconductor elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57221477A JPS59111378A (en) | 1982-12-16 | 1982-12-16 | Photo coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57221477A JPS59111378A (en) | 1982-12-16 | 1982-12-16 | Photo coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59111378A true JPS59111378A (en) | 1984-06-27 |
Family
ID=16767321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57221477A Pending JPS59111378A (en) | 1982-12-16 | 1982-12-16 | Photo coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59111378A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5321305A (en) * | 1992-04-17 | 1994-06-14 | Rohm Co., Ltd. | LED manufacturing frame and method of using the same for manufacturing LEDs |
-
1982
- 1982-12-16 JP JP57221477A patent/JPS59111378A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5321305A (en) * | 1992-04-17 | 1994-06-14 | Rohm Co., Ltd. | LED manufacturing frame and method of using the same for manufacturing LEDs |
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