JPS59108321A - Formation of metallic film through lift-off method - Google Patents
Formation of metallic film through lift-off methodInfo
- Publication number
- JPS59108321A JPS59108321A JP21996482A JP21996482A JPS59108321A JP S59108321 A JPS59108321 A JP S59108321A JP 21996482 A JP21996482 A JP 21996482A JP 21996482 A JP21996482 A JP 21996482A JP S59108321 A JPS59108321 A JP S59108321A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- positive resist
- film
- sensitivity
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 23
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000010894 electron beam technology Methods 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 25
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 16
- 239000002131 composite material Substances 0.000 abstract description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 241000951471 Citrus junos Species 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はリフトオフ法によって半導体基板上などに微
細パターンの金属膜を形成する方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for forming a finely patterned metal film on a semiconductor substrate or the like by a lift-off method.
第１図（Ａ）〜（Ｄ）はリフトオフ法による従来の金属
膜の形成方法の一例の主要段階の状態を示す断面図であ
る。FIGS. 1A to 1D are cross-sectional views showing the main stages of an example of a conventional method for forming a metal film using a lift-off method.
まず、第１図（Ａ）に示すように、半導体基板（１）の
主面上に、電子ビームの照射によって例えば酢酸インア
ミル系の第１の現像液に溶解しやすくなるいわゆるポジ
形であるポリメチルメタアクリレートとアクリロニトリ
ルとの共重合体（Ｐ（ＭＭＡ−００−ＡＮ））からなる
第１のポジ形レジスト膜（２）を形成する。通常、荷電
ビームの所定量の照射によってポジ形レジスト膜がこれ
に適合した現像液に溶解しやすくなる度合を「感度」と
呼び、この感度は、所定量の荷電ビームが均一に照射さ
れたポジ形レジスト膜のこれに適合した現像液によって
溶解されずに残った部分の厚さを現象以前のポジ形レジ
スト膜の厚さに対して規格化した残膜率で表わされてい
る。First, as shown in FIG. 1(A), a so-called positive-type polyamide resin, which is easily dissolved in the first developer such as inamyl acetate, is coated on the main surface of the semiconductor substrate (1) by electron beam irradiation. A first positive resist film (2) made of a copolymer of methyl methacrylate and acrylonitrile (P(MMA-00-AN)) is formed. Normally, the degree to which a positive resist film dissolves easily in a compatible developer when irradiated with a predetermined amount of a charged beam is called "sensitivity." The thickness of the portion of the positive resist film that remains undissolved by a suitable developer is expressed as a residual film ratio, which is normalized to the thickness of the positive resist film before the phenomenon.
次に、第１のポジ形レジスト膜（２）の表面上に、電子
ビームの照射によってメチルイソブチルケトンとイソプ
ロピルアルコールとの混合液からなる第２の現像液に溶
解しやすくなるポリメチルメタアクリレ−） （ＰＭＭ
Ａ）からなり第１のポジ形レジスト膜（２）の感度より
低い感度の第２のポジ形レジスト膜（３）を形成する。Next, on the surface of the first positive resist film (2), polymethyl methacrylic resin, which is easily dissolved in a second developer consisting of a mixture of methyl isobutyl ketone and isopropyl alcohol, is applied by electron beam irradiation. -) (PMM
A), and a second positive resist film (3) having a sensitivity lower than that of the first positive resist film (2) is formed.
第２図は電子ビームが照射されたＰ（ＭＭＡ−ｃｏ−Ａ
ＩＪ）およびＰＭＭＡのそれぞれ第１の現像液および第
２の現像液による感度曲線の一例を示す図である。Figure 2 shows P (MMA-co-A) irradiated with an electron beam.
FIG. 3 is a diagram showing an example of sensitivity curves using a first developer and a second developer for IJ) and PMMA, respectively.
図において、横軸は電子ビームの照射量〔単位Ｃ（クー
ロン）／Ｃｍ〕、縦軸は残膜率（単位チ）を示充（イ）
はＰ（ＭＭＡ−ｃｏ−ＡＭ）の感度曲線、（ロ）はＰＭ
ＭＡの感度曲線である。In the figure, the horizontal axis shows the electron beam irradiation amount [unit: C (coulombs)/Cm], and the vertical axis shows the remaining film rate (unit: CH).
is the sensitivity curve of P(MMA-co-AM), (b) is the PM
It is a sensitivity curve of MA.
さて、次に、第１図（Ａ）に図示した第２のポジ形レジ
スト膜（３）および第１のポジ形しジメ）ｆｆｌ［２１
の、半導体基板１１＋の主面上に形成すべき微細パター
ンの金属膜のパターンに対応する部分にのみ、第１図（
、ｋ）の図示矢印の方向から例えば第２図に図示（ハ）
の照射量の電子ビームを照射する。しかるのち、第２の
ポジ形レジスト膜（３）および第１のポジ形レジスト膜
（２）をそれぞれ上述の第２の現像液および第１の現像
液によって現像すると、これらのレジスト膜＋３１ 、
＋２１の感度の違いによって、第１図（Ｂ）に示すよ
うに、第２のポジ形レジスト膜（３）の半導体基板ｆｉ
＋の主面上に形成すべき金属膜のパターンに対応する部
分に開口（３ａ）が形成され、第１のポジ形レジスト膜
（２）の部分に開口（３ａ）のパターンより大急いパタ
ーンの開口（２ａ）が形成されて、第２のポジ形レジス
ト膜（３）および第１のポジ形レジスト膜（２）からな
る二層構造のレジスト膜に開口（３ａ）および開口（２
ａ）からなり、後工程におけるリフトオフ法によるポジ
形レジスト膜ｆ２１ 、 （３）の除去時に半導体基板
ｆｉ＋の主面上に形成すべき金属膜のはく離を防止でき
る、アンダーカット形状の開口ができる。Now, next, the second positive resist film (3) and the first positive resist film (3) shown in FIG.
In FIG. 1 (
, k) shown in the direction of the arrow shown in FIG.
irradiate with an electron beam with a dose of . Thereafter, when the second positive resist film (3) and the first positive resist film (2) are developed with the above-mentioned second developer and first developer, respectively, these resist films +31,
Due to the difference in sensitivity of +21, as shown in FIG. 1(B), the semiconductor substrate fi of the second positive resist film (3)
An opening (3a) is formed in a portion corresponding to the pattern of the metal film to be formed on the main surface of the +, and a pattern is formed in the first positive resist film (2) much faster than the pattern of the opening (3a). The opening (2a) is formed, and the opening (3a) and the opening (2) are formed in the two-layer resist film consisting of the second positive resist film (3) and the first positive resist film (2).
a), an undercut-shaped opening is formed that can prevent the metal film to be formed on the main surface of the semiconductor substrate fi+ from peeling off when the positive resist film f21 (3) is removed by the lift-off method in a later step.
次に、第１図（０）に示すように、蒸着法などによって
、開口（３ａ）、 （２ａ）を通して開口（３ａ）に対
応する半導体基板０）の主面上の部分に金属膜（４ａ）
を形成する。このとき同時に第２のポジ形レジスト膜（
３）の表面上には金属膜（４ｂ）が形成される。Next, as shown in FIG. 1 (0), a metal film (4 a )
form. At this time, the second positive resist film (
A metal film (4b) is formed on the surface of 3).
次に、第１図（Ｄ）に示すように、リフトオフ法によっ
て、第２のポジ形レジスト膜（３）および第１のポジ形
レジスト膜（２１を第２のポジ形レジスト膜（３）の表
面上の金桟膜（４ｂ）とともに除去すると、半導体基板
ｆｉ＋の主面上に微細パターンの金属膜（４ａ）が残る
。Next, as shown in FIG. 1(D), by a lift-off method, the second positive resist film (3) and the first positive resist film (21) are removed from the second positive resist film (3). When removed together with the metal film (4b) on the surface, a finely patterned metal film (4a) remains on the main surface of the semiconductor substrate fi+.
ところで、この従来例の方法では、互いに感度の異なる
二種類のｉｌのポジ形レジスト膜（２）および第２のポ
ジ形レジスト膜（３）を形成せねばならず、現像工程に
おいてもレジスト膜＋２１ 、 ［３１にそれぞれ適合
した第１および第２の現像液を使用せねばならず、製造
工程における現像液の取違いなどによる作業ミスが起り
やずいという欠点があった。また、レジスト剤の必要条
件である高感度、高解像度、耐エツチング性などを合せ
持つ二種類のポジ形レジスト剤の開発やこれらの二種類
のポジ形レジスト剤にそれぞれ適合した二種類の現像液
の開発に負担がかかるという欠点もあった。By the way, in this conventional method, it is necessary to form two types of il positive resist film (2) and a second positive resist film (3) having different sensitivities, and even in the developing process, the resist film +21 , [31] It is necessary to use first and second developing solutions that are compatible with each other, and there is a drawback that operational errors are likely to occur due to mix-up of developing solutions during the manufacturing process. In addition, we have developed two types of positive resist agents that meet the requirements for resist agents such as high sensitivity, high resolution, and etching resistance, and developed two types of developers that are compatible with these two types of positive resist agents. It also had the disadvantage of being burdensome to develop.
この発明は、かかる欠点を改善する目的でなされたもの
で、半導体基板の主面上に形成されたポジ形レジスト剤
によって形成された第１のポジ形レジスト膜に荷電ビー
ムを照射して高感度にした高感度ポジ形レジスト膜とこ
の高感度ポジ形レジスト膜の表面上に上記ポジ形レジス
ト剤によって形成された第２のポジ形レジ、＜）膜とで
構成された複合膜に上記ポジ形レジスト剤に適合した一
種類の現像液を用いてアンダーカット形状の開口を形成
できるようにすることによって、製造工程における現像
液の取違いなどによる作業ミスをなくすことができ、し
かもポジ形レジスト剤および現像液の開発の負担を軽減
できるリフトオフ法による金属膜の形成方法を提供する
ものである。The present invention was made with the aim of improving such drawbacks, and aims to improve sensitivity by irradiating a first positive resist film formed by a positive resist agent on the main surface of a semiconductor substrate with a charged beam. The above positive resist film is applied to a composite film composed of a high-sensitivity positive resist film made of 100% polyurethane, and a second positive resist film formed on the surface of this high-sensitivity positive resist film with the above-mentioned positive resist agent. By making it possible to form undercut-shaped openings using a single type of developer compatible with the resist agent, it is possible to eliminate work errors caused by mixing up the developer during the manufacturing process, and to use a positive resist agent. The present invention also provides a method for forming a metal film by a lift-off method that can reduce the burden of developing a developer.
第３図（Ａ）〜（Ｆ）はこの発明の一実施例の金属膜の
形成方法の主要段階の状態を示す断面図である。FIGS. 3(A) to 3(F) are cross-sectional views showing the main stages of a method for forming a metal film according to an embodiment of the present invention.
図において、第１図に示した従来例と同一符号は同等部
分を示す。In the figure, the same reference numerals as in the conventional example shown in FIG. 1 indicate equivalent parts.
まず、第３図（Ａ）に示すように、半導体基板ｆ４１の
主面上に、電子ビームの照射によって酢酸イソアミル系
の現像液に溶解しやすくなるＰ（ＭＭＡ−（！０−ＡＮ
）からなる第１のポジ形レジスト膜（２）を形成し、こ
の第１のポジ形レジスト膜（２）に図示矢印の方向から
電子ビームを均一に照射して、第３図（Ｂ）に示すよう
に、第１のポジ形レジスト膜（２）をその残膜率が小さ
くなるように高感度にした高感度ポジ形レジスト膜（１
２Ｉにする。第２図に一点鎖線で示す（い）は高感度ポ
ジ形レジスト膜！Ｉ２１の感光曲線の一例で、この感光
曲線（い）はＰ （ＭＭＡ−００−ＡＮ）の感度曲線（
イ）を高感度側へ移行させたものである。First, as shown in FIG. 3A, on the main surface of the semiconductor substrate f41, P(MMA-(!0-AN
) is formed, and this first positive resist film (2) is uniformly irradiated with an electron beam from the direction of the arrow shown in the figure to form the first positive resist film (2) shown in FIG. 3(B). As shown, a high-sensitivity positive resist film (1) is obtained by increasing the sensitivity of the first positive resist film (2) so that the remaining film rate is small.
Make it 2I. In Figure 2, the dashed line (i) is a high-sensitivity positive resist film! This is an example of the sensitivity curve of I21, and this sensitivity curve (I) is similar to the sensitivity curve (I) of P (MMA-00-AN).
A) is shifted to the high-sensitivity side.
さて、次に、第３図（０）に示すように、高感度ポジ形
レジスト膜（１２１の表面上に、Ｐ（ＭＭＡ−００−Ａ
Ｎ）からなる第２のポジ形レジスト膜（２′）を形成し
、この第２のポジ形レジスト膜（２）および高感度ポジ
形レジスト膜（１２）の、半導体基板１１１の主面上に
形成すべき金属膜のパターンに対応する部分にのみ図示
矢印の方向から例えは第２図に図示（ハ）の照射量の電
子ビームを照射する。次いで、第２のポジ形レジスト膜
（２′）および高感度ポジ形レジスト膜０りを上述の現
像液によって現像すると、これらのレジスト膜（２’）
、（＋２１の感度の違いによって、第３図（Ｄ）に示す
ように、第２のポジ形レジスト膜（２′）の半導体基板
＋１１の主面上に形成すべき金属膜のパターンに対応す
る部分に開口（２’ａ ）が形成され、高感度ポジ形レ
ジスト膜（１２）の部分に開口（２’ ａ）のパターン
より大きいパターンの開口（１２ａ）が形成されて、第
２のポジ形レジスト膜（２′）および高感度ポジ形レジ
スト膜（１２）からなる二層構造のレジスト腺に開口（
２’ ［１）および開口（１２ａ）からなるアンダーカ
ット形状の開口ができる。Next, as shown in FIG. 3(0), P(MMA-00-A
A second positive resist film (2') consisting of N) is formed on the main surface of the semiconductor substrate 111 of the second positive resist film (2) and the high-sensitivity positive resist film (12). An electron beam is irradiated only to a portion corresponding to the pattern of the metal film to be formed from the direction of the arrow shown in the figure, for example, at the dose shown in FIG. 2 (c). Next, when the second positive resist film (2') and the high-sensitivity positive resist film 0 are developed with the above developer, these resist films (2')
, (+21) corresponds to the pattern of the metal film to be formed on the main surface of the semiconductor substrate +11 of the second positive resist film (2'), as shown in FIG. 3(D). An opening (2'a) is formed in the high-sensitivity positive resist film (12), and an opening (12a) with a pattern larger than that of the opening (2'a) is formed in the high-sensitivity positive resist film (12). An opening (
2' [1] and an undercut-shaped opening consisting of the opening (12a) is formed.
以降の第３図（刊）および（Ｆ）に示す段階は、第１図
（Ｃ）および（Ｄ）に示した従来例の段階と同様である
ので、これらの段階の説明は省略する。The subsequent steps shown in FIGS. 3 (published) and (F) are the same as the steps in the conventional example shown in FIGS. 1 (C) and (D), so the explanation of these steps will be omitted.
この実施例の方法では、一種類のＰ（ＭＭＡ−ｃｏ−Ａ
Ｎ）からなる第２のポジ形レジスト膜（２′）および高
感度ポジ形レジスト膜（１２）で構成された二層構造の
レジスト膜にＰ（ＭＭＡ−（！０−ＡＮ）に適合した一
種類の現像液によって開口（２’ａ）および開口（１２
ａ）からなるアンダーカット形状の開口を形成すること
ができるので、製造工程における現像液の取違いなどに
よる作業ミスをなくすことができ、しがもポジ形レジス
ト剤の開発や現像液の開発の負担を軽減することがでへ
る。In the method of this example, one type of P(MMA-co-A
A resist film with a two-layer structure consisting of a second positive resist film (2') consisting of N) and a high-sensitivity positive resist film (12) is coated with a resist film conforming to P(MMA-(!0-AN)). Opening (2'a) and opening (12') depending on the type of developer.
Since an undercut-shaped opening consisting of This will help reduce the burden.
なお、この実施例では、高感度ポジ形レジスト膜（１２
）が一層であったが、必ずしもこれは一層である必要は
なく、照射量が順次少くなるように電子ビームが照射さ
れた複数層の高感度ポジ形レジスト膜であってもよい。In this example, a high-sensitivity positive resist film (12
) is one layer, but it does not necessarily have to be one layer, and may be a plurality of layers of high-sensitivity positive resist film irradiated with an electron beam so that the irradiation dose is successively reduced.
また、これまで、電子ビーム照射による方法である場合
について述べたが、この発明はこれに限らす、イオンビ
ーム照射による方法である場合にも適用することができ
る。Further, although the case where the method is based on electron beam irradiation has been described so far, the present invention is not limited to this, but can also be applied to the case where the method is based on ion beam irradiation.
この発明は以上説明したとおり、半導体基板の主面上に
形成されたポジ形レジスト剤からなる第１のポジ形レジ
スト膜に荷電ビームを照射して高感度にした高感度ポジ
形レジスト膜とこの高感度ポジ形レジスト膜の表面上に
形成された上記ポジ形レジスト剤からなる第２のポジ形
レジスト膜とで構成された複合膜に上記ポジ形レジスト
剤に適合したー柚類の現像液を用いてアンダーカット形
状の開口を形成できるようにしたので、製造工程におけ
る現像液の取違いなどによる作業ミスをなくすことがで
き、しかもポジ形レジスト剤の開発や現像液の開発の負
担を軽減することができる。As explained above, the present invention includes a first positive resist film made of a positive resist agent formed on the main surface of a semiconductor substrate, which is made highly sensitive by irradiating the first positive resist film with a charged beam; A second positive resist film made of the positive resist agent formed on the surface of the high-sensitivity positive resist film is coated with a yuzu-based developer compatible with the positive resist agent. Since it is now possible to form an undercut-shaped aperture by using this method, it is possible to eliminate work errors such as mixing up the developer during the manufacturing process, and it also reduces the burden of developing positive resist agents and developing solutions. be able to.
第１図（Ａ）〜（Ｄ）は従来の金属膜の形成方法の一例
の主要段階の状態を示す断面図、第２図はＰ（ＭＭＡ−
ｃｏ−ＡＮ）およびＰＭＭＡの感度曲線の一例を示す図
、第３図（Ａ）〜（Ｆ′）はこの発明の一実施例の金属
膜の形成方法の主要段階の状態を示す断面図である。
図において、（１）は半導体基板、（２１＞よび（２′
）はそれぞれ第１および第２のポジ形レジスト膜、（２
′ａ）は第１の開口、（４ａ）および（４ｂ）はそれぞ
れ第１の金属膜および第２の金属膜、（１２）は高感度
ポジ形レジスト膜、（１２ａ）は第２の開口である。
なお、図中同一符号はそれぞれ同一または相当部分を示
す。
代理人 葛 野 信 −（外１名）
９４−
〈督柵襲
（Ａ）
（こ）
、ム ｌム
３図
ＣＢ）
ＣＤ）
（Ｆ）FIGS. 1A to 1D are cross-sectional views showing the main stages of an example of a conventional metal film forming method, and FIG.
Figures 3 (A) to (F') are cross-sectional views showing the main stages of the method for forming a metal film according to an embodiment of the present invention. . In the figure, (1) is a semiconductor substrate, (21> and (2')
) are the first and second positive resist films, (2
'a) is the first opening, (4a) and (4b) are the first metal film and the second metal film, respectively, (12) is the high-sensitivity positive resist film, and (12a) is the second opening. be. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Makoto Kuzuno - (1 other person) 94- (Attack on stockades (A) (K), Figure 3 CB) CD) (F)
Claims (1)
って現像液に溶解しやすくなるポジ形レジスト剤からな
る第１のポジ形レジスト膜を形成する第１の工程、上記
第１のポジ形レジスト膜に荷電ビームを照射して上記第
１のポジ形レジスト膜を高感度ポジ形レジスト膜にする
第２の工程、上記高感度ポジ形レジスト膜の表面上に上
記ポジ形レジスト剤からなる第２のポジ形レジスト膜を
形成する第３の工程、上記第２のポジ形レジスト膜およ
び上記高感度ポジ形レジスト膜の上記半導体基板の主面
上に形成すべき金属膜のパターンに対応する部分にのみ
荷電ビームを照射したのちに上記現像液によって現像し
て上記第２のポジ形レジスト膜の上記金属膜のパターン
に対応する部分に第１の開口を形成するとともに上記高
感度ポジ形レジスト膜の部分に上記第１の開口のパター
ンより大きいパターンの第２の開口を形成する第４の工
程、上記第１および第２の開口を通して上記第１の開口
に対応する上記半導体基板の主面上め部分に第１の金属
膜を形成すると同時に上記第２のポジ形レジスト膜の表
面上に第２の金属膜を形成する第５の工程、並びにリフ
トオフ法によって上記第２のポジ形レジスト膜および高
感度ポジ形レジスト膜を上記第２の金属膜とともに除去
して上記半導体基板の主面上に上記第１の金属膜を残す
第６の工程を備えたリフトオフ法による金属膜の形成方
法。 （２） 荷電ビームが電子ビームであることを特徴と
する特許請求の範囲第１項記載のリフトオフ法による金
属膜の形成方法。 （３）荷電ビームがイオンビームであることを特徴とす
る特許請求の範囲第１項記載のリフトオフ法による金属
膜の形成方法。[Claims] 111. A first step of forming a first positive resist film made of a positive resist agent that is easily dissolved in a developer by irradiation with a charged beam on the main surface of a semiconductor substrate; a second step of converting the first positive resist film into a high-sensitivity positive resist film by irradiating the positive resist film with a charged beam; applying the positive resist agent on the surface of the high-sensitivity positive resist film; a third step of forming a second positive resist film consisting of a metal film pattern to be formed on the main surface of the semiconductor substrate of the second positive resist film and the high-sensitivity positive resist film; After irradiating only the corresponding portion with a charged beam, development is performed with the developer to form a first opening in a portion of the second positive resist film corresponding to the pattern of the metal film, and the high-sensitivity positive resist film is a fourth step of forming a second opening in a pattern larger than the first opening pattern in a portion of the shaped resist film; a fifth step of forming a first metal film on the upper part of the main surface and simultaneously forming a second metal film on the surface of the second positive resist film; and a lift-off method to form the second positive resist film. Forming a metal film by a lift-off method comprising a sixth step of removing the resist film and the high-sensitivity positive resist film together with the second metal film to leave the first metal film on the main surface of the semiconductor substrate. Method. (2) A method for forming a metal film by a lift-off method according to claim 1, wherein the charged beam is an electron beam. (3) A method for forming a metal film by a lift-off method according to claim 1, wherein the charged beam is an ion beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21996482A JPS59108321A (en) | 1982-12-13 | 1982-12-13 | Formation of metallic film through lift-off method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21996482A JPS59108321A (en) | 1982-12-13 | 1982-12-13 | Formation of metallic film through lift-off method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59108321A true JPS59108321A (en) | 1984-06-22 |
Family
ID=16743789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21996482A Pending JPS59108321A (en) | 1982-12-13 | 1982-12-13 | Formation of metallic film through lift-off method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59108321A (en) |
-
1982
- 1982-12-13 JP JP21996482A patent/JPS59108321A/en active Pending
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