JPS59107552A - Semiconductor device with recommended electrode terminal construction - Google Patents

Abstract

PURPOSE:To manufacture a compact semiconductor device with lead integration by a method wherein conductors for measurement are provided on the same main surface of electrode terminals connected to the conductors. CONSTITUTION:Bump electrodes 43-43'' are formed on an SiO2 film 41 on an Si substrate 40 with transistor etc. built in to be connected to internal wirings through metal wirings 42-42''. Conductors 46-46'' for measurement are provided between the wirings 42-42'' and the bump electrodes 43-43'' to be connected to the internal wirings and the bump electrode 43-43'' through metal conductors 42-42''. The conductors 46-46'' to be utilized for measurement only may be provided with their gaps contracted down to around 10mum while the bump electrode to be utilized for connection with leads only may be provided with their size of around 40mum. Resultantly the leads may be highly integrated with the effect increasing especially in proportion to the numbers of electrodes.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode terminal structure for a semiconductor device, and more particularly, to an electrode terminal structure for a semiconductor device in which a large number of external lead terminals are attached to a semiconductor element mounted on bamboo to a suitable size.

While many methods have been proposed for electrically connecting the electrodes of a semiconductor device and the lead wires on the outside of the container, conventional wire bonding, which uses thin conductive wires and adheres them to the points to be connected to each other, has been proposed. Alternatively, extend the lead wire inside the container, or attach a continuous ribbon of metal material to the tape surface made of flexible electrically insulating material, and form a large number of leads from metal foil. A method has been proposed in which the end portion is tapered to form an adhesive end sufficient to directly adhere to the electrode terminal of a semiconductor device, and the adhesive end is simultaneously connected to the electrode terminal.

To carry out the above connection method, the electrode terminal of the semiconductor element corresponding to the adhesive end of the lead wire is usually a protruding electrode (bump) made of metal.Usually, the bump connects the active area of the semiconductor element. Moreover, the metal forming the electrode portion is formed of Au at a position extending above the insulating film on the surface of the semiconductor element. , the above connection method includes an alloy connection method in which a copper-based lead is layered with tin and a gold bump is formed to form a heat-reduced gold-tin eutectic alloy for connection; There is a thermocompression bonding method in which a lead is coated with gold and connected to a gold bump using heat and pressure. The gold-tin alloy bonding method has the disadvantage that tin single-crystal whiskers can cause electrical shorts between leads.For semiconductor devices that require reliability, the gold-gold thermocompression bonding method is used. tends to be used.

Normally, multiple semiconductor devices are formed on a single silicon substrate (wafer), and after being diffused and wired in a wafer shape, a probe is placed on the electrode terminal to conduct an electrical characteristic test (hereinafter referred to as electrical test). ).

Thereafter, it is separated into individual semiconductor elements (semiconductor chips) by forming a depression with a laser beam or cutting with a thin diamond wheel, and the products that pass the electrical test are placed in a container, and the electrode terminals of the semiconductor elements and the leads of the container are connected.

The size and pitch of the electrode terminals (bungs) of a semiconductor device are determined by the following factors.

(1) From an electrical test perspective, the bump size is the size of a probe and the size of a wafer, as it measures multiple semiconductor devices.
It is determined by the alignment accuracy between the bump and the probe when measuring multiple bumps in succession. In addition, the connection between the lead and the bank (Honda ink) is determined based on the constraints on the manufacturing method of the lead and the connection strength. However, while about 40 μm is sufficient for connecting leads and bumps, it is difficult to reduce the bump size to about 100 μm or less from the standpoint of electrical testing.

Q) From the standpoint of electrical testing, the bump pitch is determined by the pitch at which electrical testing probes can be arranged, and cannot be smaller than the arrangement pitch of the probes, and is limited by its size. Also, from the bonding perspective, the distance between adjacent bumps (clearance) is determined by the fact that leads and bumps undergo plastic deformation due to heat and pressure during bonding. Non-contact spacing is required.

As is well known, the price of semiconductor devices is greatly affected by the size of the semiconductor chip, but in the conventional ¥t, electrode terminal structure, the electrical test probe stand and lead are connected to the same electrode terminal. As a result, it is difficult to overcome the constraints in terms of electrical testing and bonding. In other words, reducing the distance between adjacent bumps is a method of reducing the bump pitch to a pitch that allows the probe to be arranged, since electrical short circuits between bumps may occur due to plastic deformation of the bumps due to heat and pressure during bonding. occurs and cannot be applied. Furthermore, if the bump size is set to allow bonding, it becomes difficult to align the bump and the probe, making it impossible to conduct electrical tests. As a result, with the large-scale integration of semiconductor devices, the semiconductor chip size tends to be determined by the number of electrode terminals.
The price of semiconductor devices becomes expensive.

An object of the present invention is to provide an electrode structure for a semiconductor device that is compact, has a high integration density of leads, and can be manufactured at low cost by eliminating the above-mentioned drawbacks in connection between a semiconductor element having a protruding electrode and an external lead. .

A feature of the present invention is that in a semiconductor device in which an external lead is connected to an electrode terminal provided on one surface of a semiconductor substrate, a measuring conductor is formed on the same main surface as the electrode terminal, and the ultimate terminal and the measurement conductor are electrically connected.

Hereinafter, the present invention will be explained in detail using the drawings.

No. 11 (c) and 0 show conventional electrical terminal sliding construction. In FIG. 1, P! The upper projections 13 of the gauze film 11 are formed. This protrusion is connected to internal wiring (not shown in the figure) of the active region by a metal wiring conductor 12. Figures 2 and (c) show how to conduct an electrical test on a semiconductor device having such a V-pole terminal structure, and Figure 3 shows how to connect it to external leads. medium) and 0.

For electrical tests, probes 24, 24', 24", 24"'
,... with protrusions 23, 23', 24'',
23'',... However, the probe needs to measure several tens of wafers in terms of one-shot performance.
Since mechanical strength and wear resistance are required, the probe size is several tens of microns and its tip is tapered.

Since the electrical test measures a plurality of semiconductor elements in succession, the size of the protruding electrode is approximately 100 μm due to the alignment accuracy between the probe and the protruding electrode. On the other hand, since the protruding electrodes do not undergo plastic deformation during electrical tests, it is possible to set the distance between adjacent protruding electrodes to about 10 μm.

Connection bonding between the external leads and the electrode terminals is performed by aligning the connection leads 35, 35' with the protruding electrodes 33, 33', and applying heat and pressure to cause plastic deformation in the leads and protruding electrodes. In order to prevent the series leads 35 and 35' or the protruding electrodes 33 and 33' from coming into contact with each other due to plastic deformation of the leads and protruding electrodes, the interval between adjacent electrode terminals (the interval between the protruding electrodes 33 and 33') is approximately 80 mm. The front and back are necessary.

Conventional electrode terminal structures have problems with alignment accuracy between the probe and electrode terminals, and plastic deformation of the leads or electrode terminals. Therefore, the electrode terminal size should be reduced to approximately 100μ or less, and the spacing between electrode terminals should be reduced to approximately 80μ or less. difficult to do.

FIGS. 4(f) and (c) show an embodiment of the present invention. In FIG. 4, protruding electrodes 43 and 43' are formed on an insulating layer M41 such as an oxide film formed on a semiconductor substrate 40 containing transistors, diodes, resistors, etc.

43'' is formed.This protrusion electrodeposition 43,43
'.

43' is connected to the internal wiring (not shown in the figure) of the active region by metal wiring conductors 42, 42', 43'';
Furthermore, measurement conductors 46, 4G', 46'' are formed between the metal wiring conductors 42, 42', 42'' and the protruding electrodes. This measuring conductor 46.46', 46"
The metal wiring conductors 42, 42' and 42'' connect the internal wiring of the active region (not shown in the figure) and the protruding electrodes 43, 4.
3' and 43''.

Figures 5 (4) and (c) show a method for conducting an electrical test on a semiconductor element having such an electrode terminal structure, and Figure 6 (c) shows a method for connecting to external leads. and 0, the electrical test uses the probe 54, 5
4' is placed on the measurement conductor 56.56', and bonded ink aligns the connection lead 65.65' with the protrusion power 63.63', and applies heat and pressure to plastically deform the lead and protrusion electrode. Wake up and do it. Since it is used only for tilting the probe on the measurement conductor, the distance between adjacent measurement conductors (the distance between measurement conductors 56 and 56') is
can be approximately 10μ, and since the protruding electrode is used only for connection with the lead, its size can be approximately 40μ. As a result, conventional electrical testing techniques and bonding techniques can be replaced! However, it is possible to reduce the size and pitch of the electrode terminals, reduce the size of the semiconductor chip, and increase the integration of the leads.

As described above, according to the present invention, a semiconductor device that is small in size, has a high degree of lead integration, and is inexpensive can be obtained.

In particular, the effect becomes more remarkable as the number of electrodes in a semiconductor element increases, and its industrial application is extremely large.

In the embodiment of the present invention, the measurement conductor was formed adjacent to the active region side of the semiconductor element with respect to the π (pole terminal), but the present invention is not limited thereto.

The point is that the electrode terminal for bonding and the measuring conductor for testing electrical characteristics must be separated, and the electrode terminal and the measuring conductor must be electrically connected.

[Brief explanation of drawings]

FIGS. 1 (5) and (13) are a plan view and a sectional view showing a conventional electrode terminal structure. Figure 2 (C) shows the inclined position of an electrical test probe on a semiconductor device having a conventional electrode terminal structure. It is a diagram. FIGS. 3(G) and 3(C) are a plan view and a sectional view showing bonding of a semiconductor element having conventional electrode terminals. The interior of the fourth park and the mountain are a plan view and a sectional view showing an embodiment of the present invention. FIGS. 5A and 5B are a plan view and a cross-sectional view showing an inclined probe for electrical testing in an embodiment of the present invention. FIGS. 6(C) and 6(C) are a plan view and a sectional view showing bonding in an embodiment of the present invention. In the figure, 10, 20, 30, 40, 50.6
0... Semiconductor substrate, 11, 21, 31, 41,
51.61...Insulating film, 12.12', 22
, 32.32', 42.42'. 42'', 52.52', 62.62'...Metal wiring conductor, 13°13', 23,33.33',
43.43', 53.53', 63°63'...
...Protruding electrode (electrode terminal), 24.24', 24''
'. 54, 54'... Probe, 35.35', 6
5.65'... Lead for external extraction. z 3 Figure Mouse 4 Figure <A) z , 5 (A'), Hehe plexus diagram

Claims (1)

[Claims] In a semiconductor device in which an external lead is connected to an electrode terminal provided on one main surface of a semiconductor substrate, the electrode end is located on the same main surface as the child and is electrically connected to the electrode terminal. What is claimed is: 1. A semiconductor device having a preferable electrode terminal structure, characterized in that the semiconductor device has a measuring conductor having a conductor for measurement;