JPS59106125A - Detecting apparatus of contact on surface to be bonded - Google Patents
Detecting apparatus of contact on surface to be bondedInfo
- Publication number
- JPS59106125A JPS59106125A JP57217213A JP21721382A JPS59106125A JP S59106125 A JPS59106125 A JP S59106125A JP 57217213 A JP57217213 A JP 57217213A JP 21721382 A JP21721382 A JP 21721382A JP S59106125 A JPS59106125 A JP S59106125A
- Authority
- JP
- Japan
- Prior art keywords
- current
- circuit
- bonding
- capillary
- ultrasonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体集積回路等のワイヤボンティングのキャ
ピラリのボンディング的１接触検出装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a bonding-type one-touch detection device for wire bonding of semiconductor integrated circuits and the like.
従来例の構成とその問題点
半導体集積回路等の組立工程では、半導体チップのボン
ティング面とリードフレームのリード部にワイヤを接続
する０この工程はワイヤか通されたキャピラリヲ半導体
チップのボンティング而に押倒け、超音波振動を加えボ
ンディングする第１ボンテイングと、この第１ボンテイ
ングの後キヤビンυを上昇させ、リードフレームのリー
ド部に移動し第１ボンテイノグと同様に９−１・部にボ
ンティングを行なう第２ボンデイングと、第２ボツテイ
ングの後キャピラリを上昇させワイヤを切断し、キャピ
ラリの先端から出ているワイヤを火花で溶融しボールを
作る一連の動作を繰り返してワイヤを接続していぐ０
前記のボンティング動作において、キャビ−ｙ ’）が
ボンティング面に接触後の押し伺は荷重はボンディング
の品質に大きな影響を与える。しかし、従来は前記ワイ
ヤ接続の工程ではボンディングツールの上下動の動作は
カム式で行なっており、キャピラリの位置や超音波振動
を加えるタイミングは固定され、ボンディング面の高さ
のバラツキに対して対応できず、荷重を一定にすること
かできないのでボンディングの品質が不安定となってい
た。また、ボンディング面高さのバラツキに対して超音
波振動を加えるタイミングを確実にするためにキャピラ
リがボンディング面に接触したと考えられる時点から、
ある一定の時間をおいて超音波振動を加えていたために
、ワイヤ接続の時間か遅くなっていた。Conventional configuration and its problems In the assembly process of semiconductor integrated circuits, wires are connected to the bonding surface of the semiconductor chip and the leads of the lead frame.This process involves bonding the semiconductor chip to the capillary through which the wire is passed. After this first bonding, the cabin υ is raised, moved to the lead part of the lead frame, and bonded to part 9-1 in the same way as the first bonding. After the second bonding and second botting, the capillary is raised, the wire is cut, and the wire coming out from the tip of the capillary is melted with a spark to form a ball.The series of operations is repeated to connect the wires. In the above-mentioned bonding operation, the pushing load after the cavity y') contacts the bonding surface has a great influence on the bonding quality. However, conventionally, in the wire connection process, the vertical movement of the bonding tool was performed using a cam system, and the position of the capillary and the timing of applying ultrasonic vibration were fixed, making it possible to cope with variations in the height of the bonding surface. Since the load could only be kept constant, the bonding quality was unstable. In addition, in order to ensure the timing of applying ultrasonic vibration in response to variations in the height of the bonding surface, from the point when the capillary is considered to have contacted the bonding surface,
Because ultrasonic vibration was applied after a certain period of time, the time required to connect the wires was delayed.
この欠点を解決するためにはキャピラリがボンディング
面に接触したこと・と検出し、接触後のキャピラリの下
降量を制御すればよい。キャピラリがボンディング面に
接触したことを検出する方法としては第１図に示すよう
に、ボンディングツールとボンティングツールを固定し
」二下動させる固定部とに電圧をかけた接触子を設け、
その接触子のＯＮ、ＯＦＦに」ニリキャピラリかボンテ
ィング面に接触したことを検出する方法もあるが、機械
的動作のため耐久性に乏しいという問題点がある。In order to solve this drawback, it is sufficient to detect that the capillary has come into contact with the bonding surface, and to control the amount of descent of the capillary after contact. As shown in Figure 1, a method for detecting that the capillary has come into contact with the bonding surface is to fix the bonding tool and the fixing part that moves the bonding tool downward, and to provide a contactor to which a voltage is applied.
There is a method of detecting whether the contact is turned ON or OFF by contacting the capillary or the bonding surface, but this method has the problem of poor durability due to mechanical operation.
発明の目的
本発明は上記従来技術に鑑みてなされたものでボンディ
ングの品質を安定化し、ボンティング時間を短縮するた
めにキャピラリのボンディング面接触検出を機械的な接
触子等を用いることなく眠気的に行なうことのできるボ
ンディング面接触検出装置を提供するものである。Purpose of the Invention The present invention has been made in view of the above-mentioned prior art, and in order to stabilize the quality of bonding and shorten the bonding time, it is possible to detect contact with the bonding surface of a capillary in a drowsy manner without using mechanical contacts, etc. The present invention provides a bonding surface contact detection device that can perform bonding surface contact detection.
発明の構成
本発明は超音波振動子とホーンとキャピラリとからなる
ボンディングツールと、超音波振動子を共振周波数でか
つ定電圧で駆動する超音波発振器と、超音波振動子の電
流の変化を検出する電流変化検出回路とから構成され、
電流変化検出回路は超音波振動子の電流を検出する電流
検出回路と、検出した電流波形を全波整流する全波整流
回路と、時定数の異なる二つのローパスフィルタと、こ
の二つのローパスフィルタの出力′電圧の差を増幅する
差動増幅回路と、差動増幅回路の出力電圧を任意の設定
電圧と比較し、設定電圧を越えると信号を出力する比較
回路とから構成されており、ギヤピラリを振動状態でボ
ンディング面に接触させたときの超音波振動子の直流の
変化を電流変化検出回路で検出して、キャピラリがボン
ディング面に接触したことを検出することにより、接触
後のギヤピラリの下降量を制御して荷重を一定にし、ボ
ンディングの品質を安定化させるものである。Structure of the Invention The present invention includes a bonding tool consisting of an ultrasonic vibrator, a horn, and a capillary, an ultrasonic oscillator that drives the ultrasonic vibrator at a resonant frequency and a constant voltage, and detects changes in the current of the ultrasonic vibrator. It consists of a current change detection circuit that
The current change detection circuit consists of a current detection circuit that detects the current of the ultrasonic transducer, a full-wave rectification circuit that full-wave rectifies the detected current waveform, two low-pass filters with different time constants, and a combination of these two low-pass filters. It consists of a differential amplifier circuit that amplifies the difference in output voltage, and a comparison circuit that compares the output voltage of the differential amplifier circuit with an arbitrary set voltage and outputs a signal when the set voltage is exceeded. A current change detection circuit detects the change in the direct current of the ultrasonic vibrator when it contacts the bonding surface in a vibrating state, and detects that the capillary has come into contact with the bonding surface, thereby determining the amount of gear pillar descent after contact. This is to control the load and keep the load constant, thereby stabilizing the bonding quality.
実施例の説明
以下に本発明の実施例を第２図〜第３図にもと・づいて
説明する。第２図は本発明の一実施し１］におけるボン
ディング面接触検出装置である。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to FIGS. 2 and 3. FIG. 2 shows a bonding surface contact detection device according to Embodiment 1 of the present invention.
１は超音波振動子、２は超音波振動を伝達増幅するホー
ン、３ｔｄ、キャピラリ、４はワイヤ、６は半導体チッ
プ、９はホーン２を上下動させるだめの駆動装置、８は
キャピラリの位置を検出するために駆動装置９によって
ホーン２が上下動された移動量を検出する位置検出器、
１０はホーン２を回転自在に軸支するためのホルダー軸
、１１は荷重を与えるだめの荷重バネ、２０は、駆動装
置９に心力を・供給する。駆動回路、２１は超音波振動
子１を共振周波数でかつ定電圧で、駆動する超音波発振
器。1 is an ultrasonic transducer, 2 is a horn for transmitting and amplifying ultrasonic vibrations, 3TD is a capillary, 4 is a wire, 6 is a semiconductor chip, 9 is a driving device for moving the horn 2 up and down, 8 is the position of the capillary. a position detector that detects the amount of vertical movement of the horn 2 by the drive device 9;
10 is a holder shaft for rotatably supporting the horn 2; 11 is a load spring for applying a load; and 20 is for supplying a force to the driving device 9. A drive circuit 21 is an ultrasonic oscillator that drives the ultrasonic transducer 1 at a resonant frequency and at a constant voltage.
２２は超音波振動子１に流れる電流の変化を検出する電
流変化検出回路、２３は電流検出回路、２４は検出した
交流電流波形を全波整流する全波整流回路、２６と２６
は時定数の異なるローパスフィルタ、２７Ｈローパスフ
イルタｆ２５とローパスフィルタ１１２６の出力電圧の
差を増幅する差動増幅回路、２８は差動増幅回路２７の
出力電圧か任意の設定電圧を越えると信号を出力する比
較回路。22 is a current change detection circuit that detects a change in the current flowing through the ultrasonic transducer 1; 23 is a current detection circuit; 24 is a full-wave rectifier circuit that full-wave rectifies the detected alternating current waveform;
are low-pass filters with different time constants, 27H is a differential amplifier circuit that amplifies the difference between the output voltages of the low-pass filter f25 and the low-pass filter 1126, and 28 is a differential amplifier circuit that outputs a signal when the output voltage of the differential amplifier circuit 27 or an arbitrary set voltage is exceeded. comparison circuit.
２９は比較回路２８からの信号を受けて駆動回路２０を
制御する主制御回路である。A main control circuit 29 receives a signal from the comparison circuit 28 and controls the drive circuit 20.
以上のように構成されたボンティング面検出装置につい
て以下にその動作全説明する。The entire operation of the bonding surface detection device configured as described above will be explained below.
ます、超音波振動子１をボンディング時の振幅よりも小
さな振幅で振動させた状態で駆動装Ｊ ９でホーン２を
下降さぜる。ギヤピラリ３が半導体チップ５のボンディ
ング面に接触すると超音波振動子１（で流れる電流は超
音波振動子のインピーダンスが大きくなることにより、
振動子は定電圧で１駆動さ力５ているために、電流は小
さくなる。この電流の変化を電流変化検出回路２２で検
出する。First, while the ultrasonic vibrator 1 is being vibrated with an amplitude smaller than the amplitude during bonding, the horn 2 is moved downward by the driving device J9. When the gear pillar 3 comes into contact with the bonding surface of the semiconductor chip 5, the current flowing in the ultrasonic vibrator 1 increases as the impedance of the ultrasonic vibrator increases.
Since the vibrator is driven with a constant voltage and a force of 5, the current is small. A current change detection circuit 22 detects this change in current.
電流変化検出回路は超音波振動子に流れる電流を電流変
成器、あるいは抵抗で電流を検出し、全波整流回路３３
で直流に変換し、時定数の異なる二つのローパスフィル
タに入力する。電流波形か変化したとき、フィルタの時
定数の違いにより一方は速く応答し、もう一方はこれよ
り遅れて応答する。この応答の違いにより定常状態では
出力は同しであるが電流が変化したときだけ二つのフィ
ルタの出力電圧の差は大きくなる。その差を差動増幅回
路２了で増幅し、比較回路２８で設定電圧と比較して設
定電圧を越、えると信号を出力する〇主＋ｉｉ制御回路
は比較回路からの信号を受けて超音波発振器２１に信号
を送９ボンディングに必要な大きな電圧で超音波振動子
を駆動するとともに位Ｉｔ検出器８で位置を検出し、そ
の後の下降ｉｊｔを１ｆｆｌＪ御する。ホー／２はホル
ダー軸１０で回転自在に軸支されているのでボンティン
グ面接触後の荷重に」：バネ１１の伸びで決められる。The current change detection circuit detects the current flowing through the ultrasonic transducer using a current transformer or a resistor, and converts the current into a full-wave rectifier circuit 33.
The current is converted to DC and input to two low-pass filters with different time constants. When the current waveform changes, one filter responds quickly and the other responds later due to the difference in the time constants of the filters. Due to this difference in response, the outputs are the same in steady state, but the difference between the output voltages of the two filters increases only when the current changes. The difference is amplified by the differential amplifier circuit 2, and compared with the set voltage by the comparator circuit 28. If the set voltage is exceeded, a signal is output. The main control circuit receives the signal from the comparator circuit and generates an ultrasonic wave. A signal is sent to the oscillator 21 to drive the ultrasonic transducer with a large voltage necessary for bonding, the position is detected by the position It detector 8, and the subsequent downward movement ijt is controlled by 1fflJ. Since the ho/2 is rotatably supported by the holder shaft 10, the load after the bonding surface contacts is determined by the elongation of the spring 11.
したがってボンティング面接触後の下降量が一定であれ
は荷重は一定となる。主な信号の波形とタイミングを第
３図に示している。第３図のＡはキャピラリの高さを示
しており波線の位置はボンディング面の高さである。Ｂ
は超音波振動子の電流波形の包絡線で図のようにボンテ
ィング面に接触すると直流か小さくなり、ボンティング
のだめの大きな電圧か加わると電流も大きくなる。Ｃは
超音波振動子にかかる１丘圧波形の包絡１腺で定ｄ／ｆ
になっておリボンティング時（は大きな電圧がかかって
いるｏＤはロバスノイルタ■の出力型Ｊ王、ＥＶｌ、ロ
ー・＜スフイルり■の出力電圧であり、Ｆは二つのロー
パスフィルタの出力の差を増幅した波形である□Ｇ（ｄ
、比較回路２８の出力電圧波形で主：ｔｉｌｌ （ｆ１
１回路２９では、この波形をボンディング面接触前から
観測し、最初の立ち上がりを検出し、ボンティング面に
接触したことを認識して超音波発振器２１にＣに示すよ
うな大きな電圧を加えるように制御している。Therefore, if the amount of descent after the bonding surface contacts is constant, the load will be constant. Figure 3 shows the waveforms and timing of the main signals. A in FIG. 3 indicates the height of the capillary, and the position of the wavy line is the height of the bonding surface. B
is the envelope of the current waveform of the ultrasonic vibrator, and as shown in the figure, when it comes into contact with the bonding surface, the direct current becomes small, and when a large voltage from the bonding reservoir is applied, the current increases. C is constant d/f in the envelope of one hill pressure waveform applied to the ultrasonic transducer.
During ribboning (a large voltage is applied), oD is the output voltage of the output type J, EVl, low-pass filter ■ of the robust noise filter ■, and F is the difference between the outputs of the two low-pass filters. The amplified waveform □G(d
, main:till (f1
1 circuit 29 observes this waveform before contacting the bonding surface, detects the first rise, recognizes that it has contacted the bonding surface, and applies a large voltage as shown in C to the ultrasonic oscillator 21. It's in control.
以上のように本実施例によれば、・機械的な接触子等を
用いることなく、ギヤピラリを振動状態でボンディング
面に接触させ、超音波振動子の電流の変化を検出し、キ
ャピラリがボンティング面に接触したことを検出するこ
とＶ（より、その後のキャピラリの下降量を制御してボ
ンディング荷重を半導体チップのボンディング面の高さ
にバラツキがあっても一定にすることができ、ボンディ
ングの品質を安定化できる。丑だボンティング面にキャ
ピラリが接触後すぐにボンディングを行なうので、ワイ
ヤ接続時間ｄ：カム式に比べて短くできる。As described above, according to this embodiment, the gearpilary is brought into contact with the bonding surface in a vibrating state without using a mechanical contactor, the change in the current of the ultrasonic vibrator is detected, and the capillary is connected to the bonding surface. By detecting contact with the surface (V), the subsequent descending amount of the capillary can be controlled to keep the bonding load constant even if there are variations in the height of the bonding surface of the semiconductor chip, which improves the bonding quality. Since bonding is performed immediately after the capillary contacts the rough bonding surface, the wire connection time d can be shortened compared to the cam type.
さらに電流変化検出回路では電流の変化のみを検出する
ので超音波振動子の変更にも調整の必要なく対応でさる
。Furthermore, since the current change detection circuit detects only changes in current, changes in the ultrasonic transducer can be handled without the need for adjustment.
発明の効果
以上のように本発明は、超音波振動子とホーンとキャピ
ラリとからなるボンティングソールと、超音波振動子を
共握周波数でかつ定電圧で、駆動する超音波発振器と、
超音波振動子の電流の変化を検出する電流変化検出回路
とから構成され、電流変化検出回路は、電流検出回路と
、検出した電流波形を全波整流する全波整流回路と、時
定数の異なる二つのローパスフィルタと、この二つのロ
ーパスフィルタの出力電圧の差を増幅する差動増幅回路
と、差動増幅回路の出力電圧と設定電圧とを比較し、設
定電圧を越えると信号を出力する比較回路とから構成さ
れ、ギヤピラリ７’、Ｔ−振動状態でボンティング面に
接触させ、超音波振動子の電流の変化を検出して、キャ
ピラリがボンティング面に接触したことを機械的な接触
子等を用いることなく電気的に検出するもので、接触後
のキャピラリの下降量を：ｌ１ｌＪ御して荷重を一定に
し、ボンティングの品質を安定化することができる０Effects of the Invention As described above, the present invention provides a bonding sole consisting of an ultrasonic vibrator, a horn, and a capillary, an ultrasonic oscillator that drives the ultrasonic vibrator at a shared frequency and a constant voltage,
It consists of a current change detection circuit that detects changes in the current of the ultrasonic transducer, and the current change detection circuit has a current detection circuit, a full-wave rectification circuit that performs full-wave rectification of the detected current waveform, and a current change detection circuit that has a different time constant. A comparison that compares two low-pass filters, a differential amplifier circuit that amplifies the difference between the output voltages of these two low-pass filters, and a set voltage between the output voltage of the differential amplifier circuit and outputs a signal when the set voltage is exceeded. The gear pillar 7' is brought into contact with the bonding surface in a T-vibration state, and a mechanical contactor is used to detect the change in the current of the ultrasonic vibrator and detect that the capillary has contacted the bonding surface. It is electrically detected without using a wire, etc., and the amount of descent of the capillary after contact can be controlled to keep the load constant and stabilize the quality of bonding.
第１１閃に１磯誠的接触子を用いた従来のボンディング
面接触検出装置の断面図、第２図は本発明の一実施例に
おけるボンディング面接触検出装置のブロック図、第３
図−ニ第２図のブロック図（（おける主要な波形図であ
る。
１・・・・超音波振動子、２・・・・・・ホーン、３・
・・・・・キャピラリ、２１・・・・・超音波発振器、
２２・・・・・電流変化検出回路、２３・・・・・・電
流検出回路、２４・・・・・・全波整流回路、２ ｓ
、 ２６・・・・・ローノくスフィルタ、２７・・・・
・差動増幅回路、２８・・・・・比較回路。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第３図FIG. 2 is a cross-sectional view of a conventional bonding surface contact detection device using one Iso-Makoto contact in the 11th flash. FIG. 2 is a block diagram of a bonding surface contact detection device in an embodiment of the present invention.
Figure-D Block diagram of Figure 2 ((This is the main waveform diagram. 1...Ultrasonic transducer, 2...Horn, 3...
... Capillary, 21 ... Ultrasonic oscillator,
22...Current change detection circuit, 23...Current detection circuit, 24...Full wave rectification circuit, 2 s
, 26...Ronox filter, 27...
- Differential amplifier circuit, 28...comparison circuit. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3
Claims (2)
とキャピラリとから構成されるポンディングツールと、
前記超音波振動子を共振周波数でかつ定電圧の交流電圧
で駆動する超音波発振回路と、前記キャピラリを振動状
態でボンティング面に接触させたときの前記超音波振動
子の電流の変化を検出する電流変化検出回路とから構成
されるボンディング面接触検出装置ｆｔ 。(1) A pounding tool consisting of an ultrasonic vibrator, a horn that amplifies and transmits ultrasonic vibrations, and a capillary;
An ultrasonic oscillation circuit that drives the ultrasonic vibrator at a resonant frequency and a constant alternating current voltage, and detects changes in the current of the ultrasonic vibrator when the capillary is brought into contact with the bonding surface in a vibrating state. The bonding surface contact detection device ft is composed of a current change detection circuit and a current change detection circuit.
電流を検出する電流検出回路と、検出した電流波形を全
波整流する全波整流回路と、時定数の異なる二つのロー
パスフィルタと、前記二つのローパスフィルタの出力電
圧の差を↓・０幅する差動増幅回路と、前記差動増幅回
路の出力電圧と任意の設定電圧と比１咬（−前記設定電
圧を越えた」局舎に信号を出力する比較回路とから構成
される特許請求の範囲第１項記載のボンティング面接触
検出装置。(2) The current change detection circuit includes a current detection circuit that detects the current of the ultrasonic transducer, a full-wave rectification circuit that full-wave rectifies the detected current waveform, and two low-pass filters with different time constants. , a differential amplifier circuit that increases the difference between the output voltages of the two low-pass filters by ↓・0, and a station that has a ratio of the output voltage of the differential amplifier circuit to an arbitrary set voltage (-exceeds the set voltage). The bonding surface contact detection device according to claim 1, comprising a comparison circuit that outputs a signal to the bonding surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217213A JPS59106125A (en) | 1982-12-10 | 1982-12-10 | Detecting apparatus of contact on surface to be bonded |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217213A JPS59106125A (en) | 1982-12-10 | 1982-12-10 | Detecting apparatus of contact on surface to be bonded |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59106125A true JPS59106125A (en) | 1984-06-19 |
| JPS64811B2 JPS64811B2 (en) | 1989-01-09 |
Family
ID=16700630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57217213A Granted JPS59106125A (en) | 1982-12-10 | 1982-12-10 | Detecting apparatus of contact on surface to be bonded |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59106125A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0231439A (en) * | 1988-07-21 | 1990-02-01 | Texas Instr Japan Ltd | Bonding method and device therefor |
| JP2011117925A (en) * | 2009-12-02 | 2011-06-16 | Samsung Electro-Mechanics Co Ltd | Apparatus and method for inspecting defects in circuit pattern |
| CN115206825A (en) * | 2021-04-12 | 2022-10-18 | 东莞触点智能装备有限公司 | Contact determination method and system for chip attachment, die bonder and storage medium |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02101311U (en) * | 1989-01-24 | 1990-08-13 |
-
1982
- 1982-12-10 JP JP57217213A patent/JPS59106125A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0231439A (en) * | 1988-07-21 | 1990-02-01 | Texas Instr Japan Ltd | Bonding method and device therefor |
| JP2011117925A (en) * | 2009-12-02 | 2011-06-16 | Samsung Electro-Mechanics Co Ltd | Apparatus and method for inspecting defects in circuit pattern |
| CN115206825A (en) * | 2021-04-12 | 2022-10-18 | 东莞触点智能装备有限公司 | Contact determination method and system for chip attachment, die bonder and storage medium |
| CN115206825B (en) * | 2021-04-12 | 2023-06-09 | 东莞触点智能装备有限公司 | Chip bonding contact determination method, system, die bonder and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS64811B2 (en) | 1989-01-09 |
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