JPS59101845A - Device for assembling semiconductor element - Google Patents

Device for assembling semiconductor element

Info

Publication number
JPS59101845A
JPS59101845A JP57212353A JP21235382A JPS59101845A JP S59101845 A JPS59101845 A JP S59101845A JP 57212353 A JP57212353 A JP 57212353A JP 21235382 A JP21235382 A JP 21235382A JP S59101845 A JPS59101845 A JP S59101845A
Authority
JP
Japan
Prior art keywords
bonding
stem
wire
center
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57212353A
Other languages
Japanese (ja)
Inventor
Kazuhiro Osawa
和宏 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57212353A priority Critical patent/JPS59101845A/en
Publication of JPS59101845A publication Critical patent/JPS59101845A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To increase the mass productivity of a bonding process and thus simplify the structure of a special stem of a semiconductor laser by a method wherein a stage which holds the stem is allowed to have the function of rotation at 90 deg. with the intermadiate point of a wire as the center, after the first wire bonding. CONSTITUTION:The state which holds the stem is allowed to have the function of rotation at 90 deg. with the intermediate point of the wire as the center, after the first bonding, so that the wire bonding can be performed successively to the first bonding plane and the second plane nearly rectangular to this plane. For example, the holder is rotated at 90 deg. (Fig. b) with the intermediate point of the wire 4 after finishing (Fig. a) the primary bonding to an electrode lead 5 on the stem as the center, thus contriving to perform the wire bonding (Fig. c) to a semiconductor laser chip 1 mounted vertically on the stem on a mount auxiliary block 3 via a heat sink 2.

Description

【発明の詳細な説明】 本発明は半導体素子の組立装置に関し、とくにワイヤー
ボンディングに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device assembly apparatus, and particularly to wire bonding.

半導体レーザーは単結晶基板の弁開面を７アプリベロ共
振器として発光する能動素子である。そのため発振光は
半導体レーザーチップの側面から出る。したがって半導
体レーザーチップをステムに垂直にマウントする事によ
って、発振光をステムから垂直方向に取り出している。A semiconductor laser is an active element that emits light by using the valve opening surface of a single crystal substrate as a seven-sided resonator. Therefore, the oscillated light is emitted from the side of the semiconductor laser chip. Therefore, by mounting the semiconductor laser chip vertically on the stem, the oscillated light is extracted vertically from the stem.

その為には、ステム構造としてはレーザーチップをマウ
ントするマウント補助ブロックと垂直にマウントしたチ
ップから電極を取シ出す長いリードをそなえていなけれ
ばならない。To do this, the stem structure must include a mounting auxiliary block for mounting the laser chip and long leads for taking out the electrodes from the vertically mounted chip.

チップとリードをワイヤーボンディングする為にはステ
ムを水平に保持するとともに長いリードはボンディング
時の超音波パワーを吸収してしまうのでリードを強くサ
ポートするサポート機構をステム保持ステージにつける
必要があった。In order to wire bond the chip and leads, it was necessary to hold the stem horizontally and to attach a support mechanism to the stem holding stage to strongly support the leads since long leads absorb the ultrasonic power during bonding.

その様なリードをサポートする機構はステムのセツティ
ングを煩雑にし、量産性を阻害するばかりでなく、ステ
ム構造をも複雑にしていた。Such a reed supporting mechanism not only complicates the setting of the stem and impedes mass production, but also complicates the stem structure.

本発明の目的は、この煩雑なボンディング工程の量産性
を高め、半導体レーザーの特殊なステム構造を出来るだ
け簡単にする事である。The purpose of the present invention is to improve the mass productivity of this complicated bonding process and to simplify the special stem structure of a semiconductor laser as much as possible.

本発明はステムを保持するステージが第１ボンデイング
の後、ワイヤーの中間点を中心として９０″回転する機
能を有することを特徴とし、それにより第１ボンディン
グ面と第１ボンディング面に直交する第２ポンデイ／グ
面に連続してボンディングすることが可能となる。そし
てステム構造としてはリードを短かくシ、リードを２次
的にサポートする必要がなくなりた。The present invention is characterized in that the stage holding the stem has a function of rotating 90'' about the midpoint of the wire after the first bonding, so that the first bonding surface and the second bonding surface orthogonal to the first bonding surface are It becomes possible to bond continuously to the bonding/guiding surface.The stem structure also requires shorter leads and no longer requires secondary support for the leads.

以下、図面を参照してこの発明の詳細な説明する。Hereinafter, the present invention will be described in detail with reference to the drawings.

第１図（ａ）に示した様に従来の固定式の組立装置にお
いては図の様にステム構造は長いリードを有しており、
このリードにワイヤーボンディングする為には６の様な
リードをサポートする為のサポート機構が不可欠であっ
た。また、リードが少こしでもサポート部より浮いてい
ると信頼性よくワイヤーボンディングを行なうことがで
きなかった。As shown in Fig. 1(a), in the conventional fixed assembly device, the stem structure has a long lead as shown in the figure.
In order to wire bond to this lead, a support mechanism such as 6 to support the lead was essential. Further, if the lead is even slightly floating above the support part, reliable wire bonding cannot be performed.

したがって、ステムのリードに対しても高い精度が望ま
れていた。また、組立装置もサポート機構を有すること
により複雑となり、ステムのセツティングを煩雑とし量
産性に乏ぼしいものでおった。Therefore, high accuracy was also desired for the stem lead. Further, the assembly device is complicated due to the support mechanism, and the setting of the stem is complicated, resulting in poor mass productivity.

第１図（ｂ）は従来ステムのボンディング済の様子を示
したものである。FIG. 1(b) shows a conventional stem that has been bonded.

第２図（ａ）は本発明のボンディング方法の第１ステツ
プを示したものであり、第１面に１次ボンディングを終
了した所を示している。組立装置に回転機構を有するこ
とによ９図の様にステム構造にすることが出来る。との
ステム構造によればリードが短かい為超音波の吸収がな
くなるので特にリード部をサポートすることなしに信頼
性の高いワイヤーボンディングを行なうことが出来る。FIG. 2(a) shows the first step of the bonding method of the present invention, and the first side shows the end of the primary bonding. By providing a rotation mechanism in the assembly device, a stem structure as shown in FIG. 9 can be obtained. With this stem structure, since the lead is short, there is no absorption of ultrasonic waves, so highly reliable wire bonding can be performed without particularly supporting the lead part.

また短かいリードにすることによりステム組立の量産性
にも富んだものとなっている。また、セツティングも容
易に行なうことが出来る。In addition, by using a short lead, mass production of the stem assembly is facilitated. Also, setting can be done easily.

第２図（ｂ）は第１面に１次ボンディング終了後ワイヤ
の中間点を中心にホルダーを９０°回転した所を示して
いる。ワイヤーの中間点を中心に回転することによシリ
ードのボンディング済部及びウェッジの近傍のボンディ
ングワイヤーに大きな負荷を与えることをさけている。FIG. 2(b) shows the holder rotated by 90 degrees around the midpoint of the wire after the primary bonding is completed on the first surface. By rotating around the midpoint of the wire, it is possible to avoid applying a large load to the bonded portion of the series lead and the bonding wire near the wedge.

したがって第１面にボンディング終了後に回転を行なっ
ても信頼性の高いワイヤーボンディングは保たれている
。Therefore, even if the first surface is rotated after bonding is completed, highly reliable wire bonding is maintained.

第２図（Ｃ）は新しいステム構造及びボンディング済を
示している。FIG. 2(C) shows the new stem structure and bonded.

以上の様にして本発明の組立装置によれば、ステム構造
を簡単にすることが出来、また、ステムのセツティング
部も簡単な構造となるので、ステムのセツティングのス
ピードアップが行なえ、量産性に富み、信頼性の高いワ
イヤーボンディングが比較的容易に行なうことが出来る
。As described above, according to the assembly device of the present invention, the stem structure can be simplified, and the stem setting part can also be made simple, so that the speed of stem setting can be increased and mass production can be achieved. Highly flexible and reliable wire bonding can be performed relatively easily.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）は従来のボンディング方法を説明する正面
図であり、長いリードを保持するのが非常に困難である
。第１図（ｂ）は従来ステム構造及びボンディング済を
示した側面図である。第２図０は本発明によるボンディ
ング方法の第１ステツプを示した側面図であり、第１面
に１次ボンディングを終了した所を示している。第２図
（ｂ）は本発明による第２ステツプを示す側面図でおり
、ワイヤーの中間点を中心にホルダーを９０’回転した
所である。 この後第２面にボンディングを行なう。第２図（Ｃ）は
本発明によるステム機構及びボンディング済を示す側面
図である。 １・・・・・・レーザーチップ、２・・・・・・ヒート
シンク、３・°°°゛マウント補助ブロック、４・・・
・・・ボンディングワイヤー、５・・・・・・電極リー
ド、６・・・・・・サポート部、７・・・・・・ウェッ
ジ。 篤　／　図（θ〕 ４ ２　／　図ｒｂ） ２２　辺（０FIG. 1(a) is a front view illustrating a conventional bonding method, in which it is very difficult to hold long leads. FIG. 1(b) is a side view showing a conventional stem structure and a state in which bonding is completed. FIG. 20 is a side view showing the first step of the bonding method according to the present invention, and the first side shows the end of the primary bonding. FIG. 2(b) is a side view of the second step according to the invention, where the holder has been rotated 90' about the midpoint of the wire. After this, bonding is performed on the second surface. FIG. 2(C) is a side view showing the stem mechanism and the bonded state according to the present invention. 1...Laser chip, 2...Heat sink, 3.°°°゛Mount auxiliary block, 4...
... bonding wire, 5 ... electrode lead, 6 ... support section, 7 ... wedge. Atsushi / Figure (θ) 4 2 / Figure rb) 22 Side (0

Claims (1)

【特許請求の範囲】[Claims] ワイヤーボンディングにおける第１ボンディング面と第
１ボンディング面にほぼ直交する第２ポンデイングに連
続して、ボンディングする事を目的とし、ステムを保持
するステージが、前記第１ポンデイングの後前記ワイヤ
ーの中間点を中心として９０°回転する機能を有するこ
とを特徴とする半導体素子の組立装置。The purpose of bonding is to continue the first bonding surface and the second bonding substantially perpendicular to the first bonding surface in wire bonding, and a stage that holds the stem holds the intermediate point of the wire after the first bonding. A semiconductor device assembly device characterized by having a function of rotating 90° around the center.
JP57212353A 1982-12-03 1982-12-03 Device for assembling semiconductor element Pending JPS59101845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57212353A JPS59101845A (en) 1982-12-03 1982-12-03 Device for assembling semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57212353A JPS59101845A (en) 1982-12-03 1982-12-03 Device for assembling semiconductor element

Publications (1)

Publication Number Publication Date
JPS59101845A true JPS59101845A (en) 1984-06-12

Family

ID=16621131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57212353A Pending JPS59101845A (en) 1982-12-03 1982-12-03 Device for assembling semiconductor element

Country Status (1)

Country Link
JP (1) JPS59101845A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180072755A (en) 2016-06-02 2018-06-29 가부시끼가이샤가이죠 A bonding apparatus, a bonding method, and a bonding control program

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180072755A (en) 2016-06-02 2018-06-29 가부시끼가이샤가이죠 A bonding apparatus, a bonding method, and a bonding control program
US11173567B2 (en) 2016-06-02 2021-11-16 Kaijo Corporation Bonding apparatus with rotating bonding stage
US11273515B2 (en) 2016-06-02 2022-03-15 Kaijo Corporation Bonding process with rotating bonding stage

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