JPS59100297A - Formation of patterned al-si alloy layer - Google Patents

Abstract

PURPOSE:To form accurately a patterned Al-Si alloy layer on an insulating substrate by carrying out electrolysis in a phosphoric acid soln. at a specified temp. of the soln. and a specified current density and by completing the electrolysis when the voltage or electric current changes suddenly. CONSTITUTION:A substrate body 6 is composed of a substrate 1 having an upper insulating layer 2, an Al-Si alloy layer 4 formed on the layer 2, and a patterned mask layer 5 formed on the layer 4 by a photo process. DC electrolysis is carried out in an electrolytic soln. 11 contg. phosphoric acid as a principal component using the alloy layer 4 as a positive electrode and a platinum electrode 13 as a negative electrode. When the temp. of the electrolytic soln. and the current density are represented by Te ( deg.C) and Je (mA/cm<2>), respectively, constant-current or constant-voltage electrolysis is carried out under conditions which keep the value of the equation large, and the electrolysis is completed when the indication of a voltmeter 15 or an ammeter 16 changes suddenly. The electrolysis of the alloy layer 4 proceeds chiefly in the vertical direction under said conditions, and the layer 4 is hardly electrolyzed in the horizontal direction, so the mask pattern is accurately transferred to the layer 4.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a patterned I
1-8i, regarding a method for forming an alloy layer, is suitable for application when forming a wiring layer of a semiconductor integrated circuit device or a circuit device in one device.

For various reasons, wiring layers of semiconductor integrated circuit devices are
-5i alloy layer may be required (V
).

The wiring layer of a semiconductor integrated circuit device is an AI-8i metal layer C.
'4 (rub no doji (when forming, conventionally, '1' force body;:
forming an alloy layer, then Al S+ alloy layer at −[
Form a mask J on the patterned A resistor 1-, and then apply the above mask to the patterned metal layer Δ1-8i. Chemical drying (25, patterned Δ
The 1-3i alloy layer is formed between the wiring layers by transmitting light.
In the case of the chemical method, the patterned mask layer is used as a mask for the Al-Si alloy layer to be patterned. Otherwise, it is forced to be obtained by etching one piece from the side, that is, by etching it from the side.

Therefore, the patterned Al-Si alloy H'1 is
It's a 1 night thicker fi than the 7th grade pattern.
- Form a small pattern around it by turning it to the right ('
8.

By the way, the patterned Al S L alloy layer is
The same pattern as the mask layer pattern ('tFI is desirable).

The reason is that the mask layer is formed l! The patterned Al-Si alloy layer is formed in the same pattern as the desired pattern of the patterned Al-3* alloy layer. This is because it is possible to form a pattern as if it were a pattern.

However, the patterned Δ1-8i alloy layer only has side-etched edges from the pattern of the mask layer.
-A small pattern around 4jCrub can also be formed in one culm by applying the above-mentioned chemical J-ZingingC,-
If the amount of 1 node 2 L cutting is predicted,
The pattern of the mask layer is pre-formed to take into account the amount of side-etching and to be one size wider than the intended pattern of the patterned Δ1-81 alloy layer that will be covered. , the patterned Δ1-8i alloy layer can be rapidly formed into the desired pattern.

However, if J is based on the conventional method 1 mentioned above, J
Phrase I: C1l is the first stage of Shita Kagaku 10 and Seo Jung.
Statement 1. A: It was extremely difficult to predict the amount that would be thrown.

(For the second reason, 1- In the case of the conventional method described above, the patterned △1-3i alloy layer is
Noto 17 (I'd like to address the shortcomings such as the fine, high lees formation due to rotation.)

'', -) 4 The present defense is based on a proposal by 142 people to form a novel patterned Al-Si alloy layer that does not have the drawbacks mentioned above.

For example, the substrate 1F made of silicon oxide (SiOρ) is
P? i: Insulating group forming the insulating layer 2 (and J3
The insulating layer 20 of the insulating substrate 3 should be prepared in advance and patterned with Δ1 as shown in FIG. 1B.
-3i alloy layer 4 is formed in a manner known per se, for example by vapor deposition, and then the Al--Si alloy layer to be patterned.
On the alloy layer 4, as shown in FIG. A t-resist layer is formed, and the photoresist layers 1 to 1 are exposed to light using a photo 7 screen, followed by development, which is referred to as (1).
The Δ1-8i alloy layer 4 to be patterned on the insulating substrate 30 is then formed by a known method.
The substrate body 6 on which the Δ1-81 alloy layer 40 is formed and the patterned mask layer 5 is formed thereon is 1111.

The substrate body 6 is made of phosphorus M as shown in FIG.
l\1-Si
immersion so that the alloy layer 4 extends substantially vertically;
In addition, an electrode 13 made of platinum, for example, is placed in the tank 12.
The Al-3i alloy layer 4 to be patterned at d3 on the substrate body 6 is masked by the mask layer 5'. If J3 is in the area where the
Also, the electrode 13 is connected to the negative electrode side of the DC power supply 14, and the mask layer 5 is used as a mask for the Al-Si alloy layer 4, and phosphoric acid is used as the main solute. Electrolytic etching was carried out using an electrolytic solution consisting of an aqueous solution.

However, in this case, the electrolytic solution 11, which is an aqueous solution containing phosphoric acid as a main solute, is made to be an aqueous solution containing only a solute, which is a phosphoric acid solution having a concentration of 50 to 85%. 1 In that case, the region of the Al-8t alloy layer 4 that is not masked by the mask layer 5 acts as an anode, and on the anode side, □2A'l→2Δl '3+ +
A chemical reaction expressed as 5 e- occurs, and the N distillate 11
Inside, ・2 A I 3+ +21-13P → 2△I ”P
There is a chemical reaction of O+61-(", and furthermore, the electrode 13
acts as a cathode □, and a chemical reaction expressed as 6H"+6e-→31" ↑ occurs on the cathode side of □. By the '1 mechanism, Δ1-8
Although the i-alloy layer 4 is made of AI and Si,
In the unmasked areas of the mask layer '5, the etching progresses from the unetched state shown in FIG. C1 Generally shown in FIG. I checked → I understood it. However, in this case, the electrode 13 was made of platinum.

Further, the present inventor has proposed that the electrolytic etching described in 1.
Even if nitric acid (HNO) is added as a solute,
It was confirmed that the patterned Al-8t alloy layer 7 was formed under the support layer 5 in the same manner as described above.

However, in this case, phosphoric acid (50 to 85% ?i acid solution r
The nitric acid added as a solute to the electrolytic solution 11, which is an aqueous solution containing a solute of 15 to 4 volumes of liquid and 1 to 4 volumes of liquid.

Furthermore, the present inventor has discovered that the above-mentioned Ti electrolytic etching,
- Nitric acid (I'N O3) and vinegar lII'('
It was confirmed that even if C11COOI() was added as a solute, a patterned Al-3i alloy layer 7 was formed under the □ mask layer 5, as described above. .

However, in this case, 3 Also, the acetic acid is made up of an acetic acid solution with a concentration of 70 to 100%, and the nitric acid solution and acetic acid solution are both 1 to 4 parts by volume per 15 to 20 parts by volume of the phosphoric acid solution. It was assumed that

In general, the present inventor carried out the above-mentioned electrolytic etching by using the DC illumination 14 connected between the Δ1-$1 alloy layer 4 to be patterned and the electrode 13 as a constant current source, and Δ The voltage V (volt) between the region of the l'-3i alloy layer 4 not covered by the mask layer 5 and the electrode 13 was measured using a voltmeter.

In this case, the relationship between the voltage V and the time t (minute) increases to 15 minutes as shown in Fig. 4, but from time 4t onward, the voltage V suddenly increases. It was obtained as such.

Furthermore, the present inventor has determined the relationship between the voltage (1) and the failure time and the mask 8 of the A'l""-' 31 alloy layer 4.
As a result of examining the state of etching in the area where the mask is not formed using the method 5, it was found that the voltage Vlfi gradually increases with time t [until the interstitial period - (131, Δ1-3i of the alloy layer 4, Mask layer 1
) to J, -)C masked area (without -) for 1 hour t
Both (on the surface or I - F latching is possible, but when (,',
i [E(ko1ffi!J is Al-8i alloy 1
f"i4, between the masks 513 and 2 C masked - (not area l or -) - (1 C' etched to the full thickness in - Book? JJ, Uni,
The patterned Al-3I alloy jFi 7 was found to be 111-(?il [iX].

Furthermore, the present author has written a -1 matter small electrolytic test, SAT i, li l, 1. - The electric current I[V suddenly becomes 0, 1 point 1°, that is, the At-3I alloy layer 4 is covered by the mask layer 5. (Etched ++, lr point l' tJ-)
ζ, -! The patterned Δ1-81 alloy Fiv described
When forming i7, the patterned fulminium Fi7 shown in FIG. , side-tossed monodoji- (11
If you want to know that you are here, you should know that you are here.

In addition, the present invention applies the electrolytic 21-touching described above to the A I-3i alloy layer 4 to be patterned and the electrode 1.
3, connect the DC power supply 14 between the DC constant current IF source, and -C. Measuring 4 times.

In such a case, the relationship between the current I and the time t (minutes) at the time 114 is as shown in FIG. -'4, the current I decreases little by little with time t, but from time point (E') the current I suddenly decreases to 4;

Furthermore, the inventor of the present invention has determined the relationship between the current I and the time t described above, and the mask layer 5 of the Al-3I alloy layer 4.
(As a result of examining the state of 1 tupung in the unmasked region, at the time point 1' when the current I is decreasing little by little in both I! and 'n't', the Δ1-3i alloy layer 4, the area not masked by the mask layer 5 is etched from the surface with time t, but at time (.

By the mask layer ;) of the Δ1-3i alloy layer 4, the area not covered by the
Ij ツ('-Jツ'f') 'J Satl, Figure 3 C-C Generally accepted (,7, Patterned AI
I have come to the conclusion that the -31 alloy layer 7 is 111 and -C.

41 Furthermore, this book a IIIJ II''i performs the above-mentioned electrolytic etching in such a way that the above-mentioned current I suddenly becomes smaller than 1 point 11, that is, the mask layer 5 tJ of the Al-8I alloy layer 4. , J, - (The unmasked area is in its entirety.)
When forming the patterned Al-3i alloy layer 7, the patterned/xAl
-8I alloy layer 7 generally has its side surfaces
- The side of the mask IM 5 is shown as being on the inside - (is), and it is assumed that the 4 Nord King has been removed - 7) /child .

In addition, the temperature of the electrolytic solution 11 is set to a constant temperature of 1 ('C).
("C) - C1 DC power supply 14 and board body 6 J3 (
J Al-3i C1゛Change the current ■ flowing through the electrolyte 11, therefore, Δ1
Density J of current flowing through -81 alloy layer 4 (m△/am
If the DC power supply 14 is a DC low current source C, the voltage ff' V mentioned above suddenly becomes low until the time t, and the DC power supply 14 is a DC constant voltage If source ('). In the case, the above-mentioned current I suddenly decreases until the point B, i.e., the region of the Δ1-3i alloy layer 4 that is not covered by the mask layer 5 covers the entire thickness of the The 115 etched points are one Ctj, and the patterned Δ'y' described above.
) J alloy layer 7 is formed, and -C. The Al-3I alloy layer 7 is nipped at a position where it is nipped at a position of 1 C. The nipping force Y (μm) is measured.

In this case, the side where the temperature of the electrolytic solution -■- is expressed as the parameter for the current density J]
The relationship shown in FIG. 6 was obtained.

Figure 6 shows that the electrolytic solution 'ti11 is an aqueous solution containing only phosphoric acid as a solute, which is an m-acid solution with a concentration of 85%, and the temperature T c 1' (°C) of the electrolytic solution 11 is as follows. 33.
The temperature is 0°C and the A'1-8i alloy layer 1 has a thickness of 1 μm. When the phosphoric acid as the solute is 16 parts by volume of an 85% i11 degree phosphorus rIi solution, even if nitric acid is added in the amount of 1 part by volume of a 65% concentration nitric acid solution, as shown in FIG. Similar measurement results were obtained for 1q.

Furthermore, when the above-mentioned measurement is performed in the electrolytic solution 11, when the phosphoric acid as its solute is 16 parts by volume of a phosphoric acid solution with a concentration of 85%, it is made up of 1 part by volume of a nitrate Fi11 solution with a concentration of 65%. Similar measurement results, shown in FIG. 6, were obtained by adding nitric acid and acetic acid consisting of 1 part by volume of a 96% acetic acid solution.

Therefore, from the measurement results shown in FIG. 6, when the temperature T of the electrolytic solution 11 is set to a constant temperature Tc' (°C), if the current density J is increased, the side etching hanger Y (above) becomes smaller. I have come to confirm that this is the case.

Furthermore, if the current flowing through the electrolytic solution 11 is increased so that the current density J becomes large in this way, the side etching (a) that results in a small Y is obtained as the current density II.
When J is set to 1, the electric field strength between the aluminum layer 4 and the electrode 13 is significantly greater mainly in the direction connecting the Δ1-$1 alloy decoy 4 and the electrode 13 than in other directions. This is because the ratio of the speed at which the region of the Al-5r alloy layer 4 not masked by the mask layer 5 is etched in the thickness direction and the speed at which it is etched in the surface direction becomes large. I have come to realize one thing.
□Furthermore, it has been confirmed that when the current density J is kept constant and the temperature T of the electrolytic solution 11 is lowered, the side etching effect Y described in (a) above becomes smaller.

Furthermore: In order to obtain the above-mentioned side etching ff1Y with the same value, if the temperature of the electrolytic solution 11 is increased by 1゛,
It was also confirmed that if the current density J was increased accordingly, J: would be lower.

Furthermore, from the measured results not shown in FIG. 6, the relationship of the current density J to the temperature of the electrolytic solution 11 and degree 1- when the above-mentioned values of lead and temperature fnY become zero is as follows. Shown in the diagram!
JJ, obtaining sea urchin and the above-mentioned sea urchin 1. When the temperature T of the electrolytic solution 11 is constant, and the current density and degree J are human, the side etching ωY becomes small.1. The above-mentioned electrolytic etching is carried out using electrolytic solution 11.
4. Set T to temperature T'c ('C), and set current density J to .

TO=a −Je +II・・・・・・・・・・・・・・・
...(Ia) a = 2.09 (1± 0.1
．． )−・−・(111)b −17,,5(1±0.
1) If the current density is higher than the current density Je (III△/c, m':,, ) given by (1C), the patterned △1-
It has also been confirmed that the 3i alloy layer 7 is formed so that the above-mentioned side etching ff1Y is approximately zero, as shown in FIG.

Furthermore, as shown in FIG. 7, the relationship between the current density J and the temperature of the liquid 11 changes by one year, and as described above, the current density J is changed to a constant current density J e (m, , A
, , / cm' , ), if the temperature T of the electrolytic solution 11 is lowered, the above-mentioned side etching ff1Y becomes smaller. am') and electrolyte 11
The temperature T of 7'e-a-Je-1-b...
...(2a) a = , 2. ．． 09 (1±0.1)
--(2b), b = 17.5 (1±0.1)
・・・・・・・・・Temperature Te (2C) given by (2C)
℃), the above-mentioned patterned AI-8i alloy layer 7 can be etched as shown in FIG. We have also confirmed that it is formed as a zero.

Therefore, the present inventor has proposed the invention described in the claims as an invention according to the present invention.

From the above, it is clear that the IJ method of forming a patterned A1-3i alloy layer according to the present invention is successful.

According to the J method of the present invention, electrolytic etching is performed using a patterned mask layer as a mask on the patterned Δ1-3i alloy layer. patterned l,2 Al-8
As is clear from the description of 1 in FIG. 6, the i alloy layer adhesive etching, +41 y can be measured at the electrolytic temperature of 1 and by the current density, J, etc.

This I: Forms a patterned mask layer on the △1-81 alloy layer to be patterned. By forming the patterned Δ1-3i alloy layer in anticipation of the hanging Y, the patterned Δ1-3i alloy layer can be formed finely, with high precision, and easily with the desired pattern. It is characterized by the fact that it can be formed.

In addition, the above-mentioned electrolytic etching is performed on the culm.
The temperature T of the electrolytic M'a is set to temperature ]-e (°C), and the current density J is set to the above-mentioned (1a).
~Current density Je (m△/cm') given by equation (1c)
) or more, or if the current density J is set to 1nJe (m△,/cm') and the temperature I of the electrolyte is
ff 'I, -tJ in the above-mentioned formulas (2a1 to (2C))
If the temperature is below e('C),
A patterned Al-4,'i alloy layer is formed with a 1-noid etching amount Y of approximately zero.

For this purpose, J3 is applied to one culm on which a patterned mask layer is formed (the mask layer is formed in the same pattern as the intended pattern of the patterned Al-3i alloy layer to be formed, and , When the above-mentioned electrolytic solution 2 [43 in one culm of Tubungu and the temperature below the electrolytic solution is written as temperature -1-e,
When the current density J is the current density Je given by the above-mentioned formulas (1a) to (1c) or more, or when the current density is the current density Je, the temperature T of the electrolytic solution is ) ~ (2c) with formula! Patterned Al-3 can be formed by heating at a temperature below
The alloy layer has the desired pattern and can be formed finely, with high precision, and easily.
Stone the four signs.

Furthermore, is it possible to use the electrolytic tube described in -1 using a DC constant current source as a free current power source? In the case of i, J3 is applied in the middle of the electrolytic etching of A, and the end of etching a'Tr; , this corresponds to the point 11.1 where the electric current between the cathode and the cathode electrode becomes λ・1. At the point where the weight between the Δ1-3i alloy layer and the cathode electrode for it suddenly increases,
) In particular, the patterned △1-8i alloy layer can be formed precisely, with high precision, and easily, with good IIJ compatibility. Check the 1st hour you can go.

41d3.8 et al., when electrolytic - ■ - cutting is carried out using a DC constant current source as a DC power supply, the The point at which the voltage between the layer and the corresponding cathode electrode suddenly increases is easily detected by various voltage detectors and is determined by the output of the voltage detector. ,
The DC constant current source connected between the Al-3i alloy layer of -C as the anode and the corresponding cathode electrode may be made of Al, or the DC constant current source and the AI-8i of -C as the anode may be made of Al. Cutting the line between the alloy layer or the cathode electrode (1 = sipping (!j1 J, the above-mentioned electrode M)) is patterned as an anode.
The point at which the voltage between the i-alloy layer and the cathode electrode thereto suddenly becomes low can be immediately and easily avoided.

In addition, the above-mentioned electrolytic-IE etching can be performed using a DC power source,
If a DC constant current source is used for 'CtJ,' the electrolysis is
Tweezing: [At step a3, the electrolytic etching ends at the point where the current flowing from the DC constant current source through the Δ1-81 alloy layer to be patterned as an anode suddenly decreases. Therefore, the current flowing through the electrolytic nitching described above from a DC constant voltage source through the A I ''-, Si alloy layer to be patterned as Φ becomes extremely small. By performing up to 4i, it is possible to easily form a patterned Al-3i alloy layer with good reproducibility, fineness, and high viscosity with the desired pattern.・Have the characteristics that can be done.

Furthermore, electrolytic etching is performed using a counter current constant voltage source as a DC power supply (if performed, from a DC constant voltage source,
Double positive (△1-8 to be patterned as SE)
The point at which the current flowing through one alloy layer suddenly decreases is as follows:
This can be easily detected by using various current detectors.
q. Also, depending on the output of the current detector, it is possible to turn off the DC constant voltage 1F source connected between the Δ1-3i alloy layer as an anode and the corresponding cathode electrode, or turn off the DC constant voltage source. The electrolytic etching described above can be patterned as an anode from a DC constant voltage source by a simple means such as cutting the line between the electrode and the Al-3+gold alloy or cathode electrode as an anode. Termination can be immediately and easily avoided at the point when the current flowing through the A.1-3i alloy layer suddenly decreases.

Therefore, the above-mentioned features of the present invention can be reliably and easily exhibited. Also, the method for forming a patterned Al-3i alloy layer according to the present invention The patterned Al-3i alloy layer thus formed functions as a wiring layer. □ Therefore, the present invention applies this to the case of forming a wiring layer of a semiconductor integrated circuit device to achieve extremely high performance.゛C is suitable□
It has the following characteristics.

Next, an example of the present invention will be described.

Example 1 In the same manner as described above with reference to FIG. 1A, an insulating substrate 3 having an insulating layer 2 formed on a cover plate 1'' was prepared in advance. However, in this case, the substrate 1 was made of silicon and had a surface area of about 40:OCms. In addition, the insulating layer 2 is made of silicon oxide (
It shall consist of StOρ1. , :.

Thus, the Δ1-3i alloy Fi/I to be patterned was formed on the insulating layer 2 of the insulating substrate 3 in the same manner as described above with reference to FIG. 13. However, in this case, the Δl-3i alloy layer 4 was formed by vapor deposition with a thickness of 1 μm.

Next, a patterned mask layer 5 was formed on the Δ1-3i alloy P4 in the same manner as described above in FIG. 1C. In this case, the mask layer 5 is formed on the Al-3i alloy FI4 by forming 771-regimes 1 to 771-regimes 1 to 771-regimes I-Fi, and the exposure using the fu71 h mask on the fu A1 heregis I-Fi is performed. After the subsequent development process, a photoresist was formed.

This J, in the same way as the IC described above in Figure 1 C'c,
A1-8'i to be patterned on the insulating substrate 3
The substrate body 6 on which the alloy layer 4 is formed and on which the patterned mask layer 5 is formed is removed. , -Next, the substrate body 6 is placed in a "C" tank 1 containing an electrolyte 11 made of an aqueous solution containing only phosphoric acid as a solute, which is a phosphoric acid solution with a concentration of 85%, in the same manner as described above with reference to FIG.
2, the Al-8i alloy layer 4 is immersed so as to extend and cover the substantially vertical plane, and an electrode 13 made of platinum is immersed in the Al-8i alloy layer 4 of the substrate 6. Then, the Al-811 alloy layer 4 to be patterned on the substrate body 6 is immersed in the □ region not masked by the mask layer 5 with a direct current constant current source. Connected to the positive electrode side of the DC power supply 14, and also connected to the electrode 13
is connected to the negative electrode side of the DC power source 14, and applied to the Al-3i alloy layer 4. 8
A patterned Al-3i alloy layer 7 is obtained until the voltage V between the gold alloy 1 and the electrode 13 suddenly increases.

In this case, m + M of the electrolytic solution 11 is set to 20.0°C, and the current flowing through the electrolytic solution 11 is set to 50.0°C. , OmA, and therefore the current density passing through the Al-8i alloy mausoleum 4 is 1.25.
(-!+(1, (1m Δ ,' 4(1, (1
cm') m Δ 5 () (37 doshi・lko,.

In such cases, patterned Al-3i joints H・jl
The height is approximately 0, and the sowing h1 is approximately zero.

Example 1 1 L / in the same way as in Example 1 of the present invention, :r
Insulation t1 base punch 3, similar to s' + Figure 0, ten trillions of l,
''-(, patterned Pesa Δ1-3i layer 4 is formed, (-+7) AI-8i alloy layer 41-1 patterned (\reda mask layer 1) is formed (color) (k body ((ni? Is.

Next (1, 1 - In the case of Example 1 of the book 5 mentioned above (J O (
J electrolysis: Cz 11, 85% concentration of 'W4 acid solution of 168 N''! part C'cl' phosphorus Mt, 60%
'a If 1 volume t11 parts of nitric acid solution is l,r
Except for the +Jm transformation of Nashin in an aqueous solution with l l'l as a solute, - (1- is the same as in Example 1 of the Ming Dynasty (electrolytic etching of leather was carried out as described above). As in the case of the IC Honfucho Example 1, the patterned Δ1-81 alloy layer 7 was removed.

The situation is the same as in Embodiment 1 of the present invention described above (
Then, a patterned Al-3i alloy W7 was formed into L) Nodoji-C in which the amount of twisting was approximately zero.

Example 3 Same as in Example 1 of the present invention described above (,'-1 first
In Figure C, the △1-3i alloy layer 4 to be patterned on the insulating bulb 3-1- is formed, and the △1-3i alloy layer 4 is patterned on the IJ ? The surface layer 5 is formed on the surface C3', r )'J /.

Next, the electrolytic M solution 11 in the case of Example 1 of the present invention was mixed with phosphoric acid containing 16 volumes of 85% phosphoric acid solution and 1 part of nitric M solution having a concentration of 60%. Nitric acid consisting of ω part,
06% Takitei's acetic acid solution 1 volume 1 part ``C'' Aqueous solution with acetic acid as a solute (except for this change)
The same electrolytic etching as in the above-mentioned Example 1 of the present invention was performed on the patterned △1-81 alloy layer 7. 1. However, the same as 1.
ti, patterned Al-8j alloy ll″/
When i-7 is formed, the lead-in 31 is almost zero.

Example 4 -L'>if C/j $ 5"I: light 0) Example 1 f7) jU 9d, J3 (J le DC power supply 1
4 with a constant current voltage source 13. Accordingly, the current l flowing through the alloy layer 4 suddenly decreases to 4c. Except for what was done up to point ~C, in the case of Example 1 of the present invention described above, 11j) went back to the original culm and patterned (＼attached △1-8i alloy M7 q:r T, two,.

This is because -1-) As in the case of Example 1 of the present invention, the patterned 7jΔ1-8i alloy layer 7 is formed with a lead etching amount of approximately zero. It was done.

Example (3) Case 1 of Example 2 of the present invention described above; Except that the current I flowing through the layer suddenly becomes small (1), the same steps as in Example 2 of the present invention are taken. −(, patterned △1−
As in the case of Example 2 of the present invention, in which the patterned △1-3i alloy layer 7 is 1511 thick, the patterned size is 1.1ili. It was formed in Shinotoshi, where the suspension is almost zero.

Example (3-V) In the case of Example 33 of the present invention described above, the DC power supply 14 is a DC constant voltage source, and 1.6-CC electrolytic etching is applied to the Δ1-3i alloy layer from the DC constant voltage source. -C takes the same order of magnitude as in Example 3 of the invention described above, except that the current l flowing through the patterned Al -8i alloy layer 7 of 1 qt:.

In that case, as in Example 3 of the present invention described above, the patterned Δ1-3i alloy layer 7 was formed with substantially zero lead etching.

[Brief explanation of the drawing]

Figures 1 Δ, B and C serve to illustrate the method of forming a patterned Al-8t alloy layer according to the present invention.
"Al-8t alloy layer to be patterned" Second, the sequential steps of forming a patterned mask layer are carried out.
It is a sectional view along the route. FIG. 2 similarly shows a patterned A' according to the invention.
The patterned Al-3t alloy layer is formed by electrolytic etching on the Al-8t alloy layer to be patterned, which serves to explain the method of forming the 1-3t alloy layer.
It is a route map without showing the steps involved. FIG. 3 similarly shows a patterned Δ1 according to the present invention.
To explain the method for forming the -3i alloy layer, the lines in the step of forming a patterned △1-3i alloy layer by electrolytic etching on a thick patterned 'Al-'St alloy layer. FIG. FIG. 4 similarly shows a patterned A according to the present invention.
To explain the method of forming the l-8t alloy layer, electrolytic etching was performed on the Al-8'i alloy layer to be patterned using a DC power source, such as a DC constant current source.
□ Time [(minutes) during the process of forming a patterned Al-3t alloy layer, and the voltage between the Al-8t alloy layer as an anode on the substrate and the □ cathode electrode. Figure 1 shows the surface relationship of 5 loaves V (BotQ +->.
- To explain the method of forming an 8i alloy layer, by soap etching the At2S'i alloy layer to be patterned using a □ DC power supply with □ constant DC voltage. During the process of forming a patterned Δ1-L3''i alloy layer, a DC constant voltage source 1>) was applied to the substrate as an anode and an electrode for the time [(minutes)]. Al of
Figure 6 is a diagram that does not show the relationship between the current 1 (mA) flowing through the -3t and alloy layers. d3 to form a patterned Al-8i base metal layer by electrolytic etching on the At-8+gold alloy. In the present invention, the temperature of the patterned Δ1 formed by is a parameter, and the current density J, mΔ/cm')
-8i alloy layer lead etching ff1Y (μm),
The relationship is not shown in the diagram. FIG. 7 similarly shows a patterned △ according to the present invention.
Method of Forming a 1-3i Alloy The process of forming a patterned Δ1-3i alloy layer is carried out by electrolytic etching on the Al-8t alloy layer to be patterned. , the temperature of the electrolyte when the side-etching closure Y of the patterned Al-5+gold alloy formed by J: becomes zero, the temperature of the electrolyte T < °C) 4 is opposed to the one-flow tight eave J ( It is a figure which shows the relationship of mA/cm'). FIG. 8 is a cross-sectional view showing an example of a patterned Al-8t gold alloy obtained by the method of forming a patterned aluminum layer according to the present invention.・ □１・・・・・・・・・・・・・・・
Substrate 2...Insulating layer.・３・・・・・・・・・・・・・・・Insulating substrate 4・・
・・・・・・・・・・・・・・・ Should be patterned□
△1-3i alloy layer 5・・・・・・・・・・・・・・・Patterned mask layer・6・・・・・・・・・・・・・・・・Substrate/plate body 7
・・・・・・・・・・・・・・・Patterned AI
'-'81 Alloy layer 11... Electrolyte 12...
・・・・・・・・・・・・Tank 133・・・・・・・・・
・・・・・・Electric(4(14・・・・・・・・・・・・)
・・DC power supply 15)・・・・・・・・・・・・・・・Kun Shimotsuki 10・・・・・・・・・・・・・・・Applicant Tokyo Denki Kagaku Rgyo Co., Ltd. r1 Figure 1 Figure 3 Figure 1F4. a 1 (No) Figure 5 Figure 7 0 10 20 30 a--1-,-,
T('C) Figure 8

Claims (1)

[Claims] 1. Insulation 1'l 1. t+max-1 (to be patterned)\saAIS i form the remainder ff'i, and the △l-'
,,' Form a mask layer on the At-8i alloy layer (1-:7, for the At-8i alloy layer, -1-) , the layer is -1) L), and the liquid is ll-) m M. 4-j') iX, and (Go, Nitte,
A method for forming a patterned Δ1-3i alloy layer comprising forming a patterned Δ1-3i alloy layer. 2.4! IM'lClaim No. ``Patterning 2\reIko△l'F)''>I In the process of forming an alloy layer, the above-mentioned 7h The humidity of the solution 1 (℃) is J'e ('C) and the current ratio 'U
J ('am' to m), IO・-11-J e )lla = 2.09 (1± 0.1)b =
17.5 (10 0.1) Je(mΔ/
1. A method for forming a patterned Δ1-81 alloy layer, characterized in that the method is carried out at a current density of at least cm'). 3. Patterned △ described in item 1 of the scope of the 11th amendment
1 - In the method of forming a Si alloy layer, the electrolytic etching is performed at a current density, J (mA 7' Cm+ )
Je(mΔ/cm')," - temperature of the cosmolytic solution 1σ1
(℃), I'e = a-Je 1b a -2,09 (1±0.1) b = -17,5 (1''20,1)
A method for forming a patterned Δ1-81 alloy layer, characterized in that the patterned A1-81 alloy layer is carried out at a temperature of -1'e (°C) or below -F.4. 3
Form an i alloy layer, form a patterned 7-sphere layer on the Δ1-3i alloy layer 1-1), and then apply the Al-8
For the i alloy layer, using the above mask layer as a mask and using an electrolytic solution consisting of water or molten soda containing phosphoric acid as the main solute. F/? -, U tucking, □ the above A + -, :, 3, + alloy layer to be patterned as an anode;・Connect a DC constant current source between the negative electrode and the Δ1-8 to be patterned as the anode.
The patterned Al-8i alloy layer is characterized by forming a patterned Al-8i alloy layer by forming a patterned Al-8i alloy layer by forming an electric current between the electrode and the cathode layer. A method of forming an Al-8i alloy layer. 5. Patterned A described in claim 4
In the method for forming the l-3i alloy layer, the electrolytic etching is performed by adjusting the temperature T-('C) of the electrolyte solution to Tc (
℃), and the current density J (m Δ/cn+')
, Te = a-J6 + b a = 2.09 (1±0.1) b=17.5<1±0.1) ・Current given by Je (mA/cm') or more, density: A method of forming a patterned Al-3i alloy layer characterized by the following steps: 6,' In the method for forming a turquoise Al-8i alloy layer according to claim ii4, the above-mentioned type F
N]-tuching, current density J(IIIA/Cm'
) is Je (mA, 'can'), and the temperature T (℃) of the electrolyte is expressed as (, =,, a 4. J, e +,, ba =
2.09 (l ± 0.1)b=17.
A method for forming a patterned Al-8i alloy layer, characterized in that the process is carried out at a temperature below 1-e('C,) given by 5(i±0.1). 7. Pattern on insulating substrate: △1-3i to be printed
An alloy layer is formed, a patterned mask layer is formed on the Al-8i alloy layer, and then a patterned mask layer is formed on the Δ1-8i alloy layer using the mask layer as a mask and phosphoric acid is used as the main solute. Electrolytic etching is carried out using an electrolytic solution consisting of an aqueous solution, with the Al-8i alloy layer to be patterned as the anode, and the Al-3i alloy layer to be patterned as the anode and the cathode opposite thereto. A DC constant voltage source is connected between the electrodes, and a current flows from the DC, current, constant voltage source through the outer Al-5 + gold alloy that is converted into an anode. By doing this until the point where it suddenly becomes smaller, 1. A method of forming a patterned Δ13i alloy layer comprising forming a patterned Al-3i alloy layer. 8. Battanized A according to claim No. 7
5S! In the method for forming the gold layer, the electrolytic etching is performed by changing the temperature of the electrolyte T<'C to Te (°C).
), and the current density, J(l'IlΔ7cm'), is Te7a-Jc,+b,: a=2. , (Hl,, (1±0.1)tl =
17.5 A method for forming a patterned Al-5+gold alloy, characterized in that it is carried out at a current density equal to or higher than Je (mA/alTl') given by (l ± 0.1). 9.Special ¥1: Range of i′I request as described in item 7 Turn 1
Heat treated Al-5; method for forming alloy layer (this L13
The above electrolytic etching is performed at It' with a current density J (m△
/cm', , ) to J, e, , (mA / , c+n
), the temperature T ('C) of the electrolyte is Te = a6Je + b a = 2.09 (1 ± 0.1) b = 17.5 (1 ± 0.1 °) C below the given Te (°C) A method of forming a patterned Δ+ -S alloy layer characterized by carrying out at temperature.