JPS5898924A - 微細パタ−ン形成方法 - Google Patents
微細パタ−ン形成方法Info
- Publication number
- JPS5898924A JPS5898924A JP19811481A JP19811481A JPS5898924A JP S5898924 A JPS5898924 A JP S5898924A JP 19811481 A JP19811481 A JP 19811481A JP 19811481 A JP19811481 A JP 19811481A JP S5898924 A JPS5898924 A JP S5898924A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- film
- exposure
- resist
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- JWPRTLPEVKPSEG-UHFFFAOYSA-N [6'-acetyloxy-6-[3-[3-[4-(1-methylindol-3-yl)-2,5-dioxopyrrol-3-yl]indol-1-yl]propylcarbamoyl]-3-oxospiro[2-benzofuran-1,9'-xanthene]-3'-yl] acetate Chemical compound C1=C(C=2C(NC(=O)C=2C=2C3=CC=CC=C3N(C)C=2)=O)C2=CC=CC=C2N1CCCNC(=O)C(C=C12)=CC=C2C(=O)OC21C1=CC=C(OC(C)=O)C=C1OC1=CC(OC(=O)C)=CC=C21 JWPRTLPEVKPSEG-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19811481A JPS5898924A (ja) | 1981-12-08 | 1981-12-08 | 微細パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19811481A JPS5898924A (ja) | 1981-12-08 | 1981-12-08 | 微細パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898924A true JPS5898924A (ja) | 1983-06-13 |
| JPS6224941B2 JPS6224941B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-05-30 |
Family
ID=16385697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19811481A Granted JPS5898924A (ja) | 1981-12-08 | 1981-12-08 | 微細パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898924A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01105536A (ja) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | フォトレジストパターン形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5228267A (en) * | 1975-08-28 | 1977-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Minute processing |
| JPS5633827A (en) * | 1979-08-29 | 1981-04-04 | Seiko Epson Corp | Photo etching method including surface treatment of substrate |
-
1981
- 1981-12-08 JP JP19811481A patent/JPS5898924A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5228267A (en) * | 1975-08-28 | 1977-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Minute processing |
| JPS5633827A (en) * | 1979-08-29 | 1981-04-04 | Seiko Epson Corp | Photo etching method including surface treatment of substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01105536A (ja) * | 1987-10-19 | 1989-04-24 | Sanyo Electric Co Ltd | フォトレジストパターン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6224941B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-05-30 |
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