JPS5895821A - Parallel flat-plate type plasma cvd method - Google Patents

Parallel flat-plate type plasma cvd method

Info

Publication number
JPS5895821A
JPS5895821A JP19470681A JP19470681A JPS5895821A JP S5895821 A JPS5895821 A JP S5895821A JP 19470681 A JP19470681 A JP 19470681A JP 19470681 A JP19470681 A JP 19470681A JP S5895821 A JPS5895821 A JP S5895821A
Authority
JP
Japan
Prior art keywords
plasma cvd
ions
cvd film
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19470681A
Other languages
Japanese (ja)
Inventor
Hideo Kotani
小谷　秀夫
Hisao Yakushiji
薬師寺　久雄
Katsuhiro Tsukamoto
塚本　克博
Hiroji Harada
原田　「ひろ」嗣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19470681A priority Critical patent/JPS5895821A/en
Publication of JPS5895821A publication Critical patent/JPS5895821A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Abstract

PURPOSE:To obtain a smooth plasma CVD film having an excellent property of coating a staged part, by giving a sputtering effect with ions when the plasma CVD film is formed. CONSTITUTION:A plasma CVD film 2 is formed on a substrate 1 arranged on a parallel flat-plate electrode whereon a high-frequency power is impressed, by introducing a reactive gas and an inactive gas such as argon (Ar) under a reduced pressure and by supplying the high-frequency power to the electrode to generate plasma. On the surface of the above electrode, a cathode fall occurs, and thus active gas ions and inactive gas ions such as argon ions fall along a vertical electric field on the surfaces of the above electrode and a substrate 1. The energy of the ions thus falling is increased by reducing the pressure of gases and increasing a charged power, a sputtering phenomenon is thereby made to occur, and thus etching by the ions is performed simultaneously with the deposition by plasma CVD. In the case when a stage is formed beforehand on the substrate 1, the etching in the staged part is facilitated in comparison with that in a smooth part.

Description

【発明の詳細な説明】 この発明は、平行平板型プラズマＣＶＤ膜による膜形成
時の平坦化技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a planarization technique during film formation using a parallel plate type plasma CVD film.

従来、プラズマＣＶＤ膜による成膜の断面図を第１ｔ！
！３に示す。図において、（１）は基板、（２）はプラ
ズマＣＶＤ膜である。A cross-sectional view of film formation by conventional plasma CVD film is shown in 1t!
! Shown in 3. In the figure, (1) is a substrate, and (2) is a plasma CVD film.

プラズマＣＶＤ膜（＋りは、減圧下に反応ガスを導入し
、平行平板電極に高周波電力を供給しプラズマを発生さ
せて基板（１）上に形成される。A plasma CVD film is formed on a substrate (1) by introducing a reactive gas under reduced pressure and supplying high frequency power to parallel plate electrodes to generate plasma.

従来のプラズマＣＶＤ膜は以上のように形成さｎるので
段差被覆性は比較的良好であるが、該ＣＶＤ膜形成後も
基板（１）の段差形状がその才ま残るため。Since the conventional plasma CVD film is formed as described above, the step coverage is relatively good, but the step shape of the substrate (1) remains even after the CVD film is formed.

ＣＶＤ膜のパターニングする際に段部のＣＶＤ膜に。For CVD film at stepped portions when patterning CVD film.

ピンホールが発生したり、パターン精度が悪くなるとい
う欠点がある。又、上記のプラズマＣＶＤ　ＩＩ上に他
の膜を形成する際、該成膜が段差部で薄くなる欠点もあ
る。There are drawbacks such as pinholes and poor pattern accuracy. Furthermore, when another film is formed on the plasma CVD II described above, there is also a drawback that the film becomes thinner at the stepped portions.

この発明は従来のものの欠点を除去するためになされた
もので、プラズマＣＶＤ膜形成時にイオンによるスパッ
タリング効果を持たせることにより。This invention was made to eliminate the drawbacks of the conventional method by providing a sputtering effect using ions during plasma CVD film formation.

段差被覆性の良い平担なプラズマＣＶＤ　ＩＩを提供す
ることを目的としている。The purpose is to provide a flat plasma CVD II with good step coverage.

以下、この発明の一実施例を第２図で説明する。An embodiment of the present invention will be described below with reference to FIG.

図において、（１）は基板、印）はプラズマＣＶＤ膜で
ある。In the figure, (1) is a substrate, and (marked) is a plasma CVD film.

プラズマＣＶＤ膜は、減圧下に反応ガスおよび不活性ガ
ス、例えばアルゴン（Ａｒ　）を導入し、平行平板電極
に高周波電力を供給しプラズマを発生させて、高周波電
力が印加される電極上に配置した基板（１）上に形成さ
れる。上記電極表面には陰極降下が発生し、活性ガスイ
オンおよび不活性ガスイオン例えばアルゴンイオンは、
上記電極および基板（１）表面上の重直な電界にそって
入射する。入射するイオンエネルギーはガス圧力を下げ
投入を力を増すことにより増加しスパッタリング現象が
庄じ、プラズマＣＶＤによる堆積と同時にイオンによる
エツチングが同時に行なわれる。イオンによるエツチン
グ速度は入射角度依存性を示し、４６度付近で最大であ
るため、第２図に示すように基板（υにあらかじめ段差
がある場合は、平担部に比較して段差部でのエツチング
が促進され１段差被覆性の良い平担なプラズマＣＶＤ膜
（２）が形成される。Plasma CVD films are produced by introducing a reactive gas and an inert gas such as argon (Ar) under reduced pressure, supplying high-frequency power to parallel plate electrodes to generate plasma, and placing the plasma on the electrodes to which high-frequency power is applied. Formed on a substrate (1). Cathode fall occurs on the electrode surface, and active gas ions and inert gas ions, such as argon ions,
The light is incident along the overlapping electric fields on the surface of the electrode and substrate (1). The energy of incident ions is increased by lowering the gas pressure and increasing the injection force, the sputtering phenomenon is suppressed, and etching by ions is performed simultaneously with deposition by plasma CVD. The etching rate of ions shows dependence on the incident angle and reaches its maximum around 46 degrees. Etching is promoted and a flat plasma CVD film (2) with good one-step coverage is formed.

以上のように、この発明によればプラズマＣＶＤ膜形成
時にイオンによるスパッタリング効果を持たせるように
したので１段差被覆性の良い平担なプラズマＣＶＤ　Ｍ
を得らｎる効果がある。As described above, according to the present invention, since a sputtering effect by ions is provided when forming a plasma CVD film, a flat plasma CVD film with good one-step coverage can be obtained.
It has the effect of obtaining

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のプラズマＣＶＤ膜を示す断面図。 ｊＩ！図はこの発明の一実施例によるプラズマＣＶＤ膜
を示す断面図である。 （１）　−Ｉｓ板、　（り−２５ズｖｃＶＤＩＡ＠なお
１図中、同一符号は同一、又は相当部分を示す。 第１図 第２図FIG. 1 is a cross-sectional view showing a conventional plasma CVD film. jI! The figure is a sectional view showing a plasma CVD film according to an embodiment of the present invention. (1) -Is board, (Ri-25svcVDIA@1 In Figure 1, the same reference numerals indicate the same or equivalent parts. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] イオンによるスパッタリング効果を有することを特徴と
する平行平板型プラズマＣＶＤ法。A parallel plate plasma CVD method characterized by having a sputtering effect using ions.
JP19470681A 1981-11-30 1981-11-30 Parallel flat-plate type plasma cvd method Pending JPS5895821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19470681A JPS5895821A (en) 1981-11-30 1981-11-30 Parallel flat-plate type plasma cvd method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19470681A JPS5895821A (en) 1981-11-30 1981-11-30 Parallel flat-plate type plasma cvd method

Publications (1)

Publication Number Publication Date
JPS5895821A true JPS5895821A (en) 1983-06-07

Family

ID=16328897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19470681A Pending JPS5895821A (en) 1981-11-30 1981-11-30 Parallel flat-plate type plasma cvd method

Country Status (1)

Country Link
JP (1) JPS5895821A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61182219A (en) * 1985-02-08 1986-08-14 Nippon Telegr & Teleph Corp <Ntt> Thin film growing method
KR970052911A (en) * 1995-12-29 1997-07-29 김주용 Planarization method of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247679A (en) * 1975-10-14 1977-04-15 Ibm Method of flattening insulating layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247679A (en) * 1975-10-14 1977-04-15 Ibm Method of flattening insulating layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61182219A (en) * 1985-02-08 1986-08-14 Nippon Telegr & Teleph Corp <Ntt> Thin film growing method
KR970052911A (en) * 1995-12-29 1997-07-29 김주용 Planarization method of semiconductor device

Similar Documents

Publication Publication Date Title
SG145523A1 (en) Darc layer for min process integration
EP0144055A2 (en) Process and apparatus for producing a continuous insulated metallic substrate
EP0786795A3 (en) Method for manufacturing thin film, and deposition apparatus
EP4129890A1 (en) Curved substrate etching method
JPS5895821A (en) Parallel flat-plate type plasma cvd method
KR100193757B1 (en) Plasma Taper Etching Method
JPS5619030A (en) Production of liquid crystal display element
US4645866A (en) Photovoltaic device and a method of producing the same
US4136212A (en) Method for the production of light conductor structures with interlaying electrodes
JPS61153275A (en) Formation of thin film by sputtering
JP2564748B2 (en) Plasma vapor phase reaction apparatus and plasma vapor phase reaction method
JPS5731140A (en) Etching method by reactive ion
JPS61291964A (en) Resin target for sputtering
JPS6366909B2 (en)
JP2506389B2 (en) Dry etching method for mask substrate
JPS5783034A (en) Method for taper etching
JPS6428925A (en) Formation of insulating film
JPH01134976A (en) Manufacture of solar cell
JPS61170077A (en) Manufacture of thin-film solar cell
JPS6427245A (en) Manufacture of semiconductor device
Nakayama et al. Process and Apparatus for Producing a Continuous Insulated Metallic Substrate
KR100370400B1 (en) Substrate of plasma enhanced chemical vapor deposition process
JPH05121742A (en) Method of manufacturing thin film transistor
JPS63274183A (en) Patterning method for metal film on transparent substrate
JPS61278170A (en) Manufacture of photovoltaic device