JPS5895689A - 単結晶育成法 - Google Patents
単結晶育成法Info
- Publication number
- JPS5895689A JPS5895689A JP19306081A JP19306081A JPS5895689A JP S5895689 A JPS5895689 A JP S5895689A JP 19306081 A JP19306081 A JP 19306081A JP 19306081 A JP19306081 A JP 19306081A JP S5895689 A JPS5895689 A JP S5895689A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- ampoule
- ampule
- crystal growth
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 69
- 239000003708 ampul Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000002109 crystal growth method Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 10
- 229910002804 graphite Inorganic materials 0.000 abstract description 8
- 239000010439 graphite Substances 0.000 abstract description 8
- 239000000843 powder Substances 0.000 abstract description 7
- 229910002665 PbTe Inorganic materials 0.000 abstract description 4
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000011491 glass wool Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- 230000005501 phase interface Effects 0.000 description 4
- 239000002470 thermal conductor Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19306081A JPS5895689A (ja) | 1981-12-01 | 1981-12-01 | 単結晶育成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19306081A JPS5895689A (ja) | 1981-12-01 | 1981-12-01 | 単結晶育成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5895689A true JPS5895689A (ja) | 1983-06-07 |
| JPS6121194B2 JPS6121194B2 (cs) | 1986-05-26 |
Family
ID=16301519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19306081A Granted JPS5895689A (ja) | 1981-12-01 | 1981-12-01 | 単結晶育成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895689A (cs) |
-
1981
- 1981-12-01 JP JP19306081A patent/JPS5895689A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6121194B2 (cs) | 1986-05-26 |
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