JPS5895321A - Optical switching array - Google Patents

Optical switching array

Info

Publication number
JPS5895321A
JPS5895321A JP56193187A JP19318781A JPS5895321A JP S5895321 A JPS5895321 A JP S5895321A JP 56193187 A JP56193187 A JP 56193187A JP 19318781 A JP19318781 A JP 19318781A JP S5895321 A JPS5895321 A JP S5895321A
Authority
JP
Japan
Prior art keywords
switching
substrate
common electrode
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56193187A
Other languages
Japanese (ja)
Inventor
Takashi Shibakuchi
芝口 孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP56193187A priority Critical patent/JPS5895321A/en
Publication of JPS5895321A publication Critical patent/JPS5895321A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/055Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Projection-Type Copiers In General (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Exposure Or Original Feeding In Electrophotography (AREA)
  • Combination Of More Than One Step In Electrophotography (AREA)

Abstract

PURPOSE:To suppress a crosstalk to a low extent, to reduce an electrostatic capacity between electrodes, to raise resolution, and also to execute a response at a high speed, by providing a bandlike common electrode on one surface of a transparent porcelain substrate, and a zigzag switching electrode so as to be opposed to said electrode, and also on both sides. CONSTITUTION:On one surface of a transparent porcelain substrate 31, a bandlike common electrode 32 is provided, and on both its sides, zigzag switching electrodes 33, 34 are provided, voltage is applied by selecting the switching electrodes 33, 34 through driving circuits 35, 36, and the refractive index of the substrate 31 is varied. Since the switching electrodes 33, 34 are placed like zigzag, an electrostatic capacity between the adjacent switching electrodes is reduced, also a crosstalk is obstructed, resolution is raised, and also a response is executed at a high speed.

Description

【発明の詳細な説明】 本発明は透明な磁器基板の一面に複数の電極を設け、こ
れらの電極が対向する領竣の基板部VCwL界を作用さ
せることで、直重対向領域に照射される光の透過tを変
化させる光スイツチングアレイに関する。
[Detailed Description of the Invention] The present invention provides a plurality of electrodes on one surface of a transparent ceramic substrate, and by applying a VCwL field to the substrate portion of the opposing regions, the directly opposing regions are irradiated. The present invention relates to an optical switching array that changes light transmission t.

この種の光スイツチングアレイは哨1図fa)VC示す
ように、透明な磁器基板11の一面に複数のスイッチン
グ亀#Ii、12を交叉層状に1設し、隣接するスイッ
チング[極間に電圧を印加することで領域Aの光の透過
量を変化させるもの、あるいは、@1図(b)に示すよ
うに、透明な磁器基板21の一面に帯状の共通電極22
を設けるとともに、この共7電極nに対向する株数のス
イッチング電極Z3を並設し。
In this type of optical switching array, as shown in Figure 1 fa) VC, a plurality of switching elements #Ii, 12 are arranged in cross layers on one surface of a transparent ceramic substrate 11, and the adjacent switching elements [voltage between the electrodes] A device that changes the amount of light transmission in area A by applying
At the same time, a number of switching electrodes Z3 opposite to these seven electrodes n are arranged in parallel.

共通喧4ilii2zおよび選択されたスイッチング1
を啄四間に鎮圧を印加することで領域Bの元の透過量を
変化させるものがあった。
Common din 4ilii2z and selected switching 1
There was one in which the original amount of transmission in region B was changed by applying pressure for a period of time.

この場合1田器基板11および211.鉛九 、ランタ
ンLa、ジルコニウムZr およびチタンTIを適切な
割合で混会して板状に焼成した鏝、厚さが200〜40
0瑚fになるようにその両面を光学研摩したもので、一
般[tff、PLZT基板と呼ばれるものである。
In this case, the substrates 11 and 211. A trowel made by mixing lead 9, lanthanum La, zirconium Zr, and titanium TI in appropriate proportions and firing it into a plate shape, with a thickness of 200 to 40 mm.
Both sides of the substrate have been optically polished to a 0.0 f f, and are commonly referred to as PLZT substrates.

このPLZT基板に誘wt率が高く、且つ、透明でこの
基板内に電界を作用させるとともに偏光子を介して光を
照射すると電界強度に応じて屈折もが変化するという4
!頁な性質をもっている。
This PLZT substrate has a high dielectric constant and is transparent, and when an electric field is applied to the substrate and light is irradiated through a polarizer, the refraction changes depending on the electric field strength.
! It has a page-like nature.

一方、スイッチング!?12.2’lおよび共通電極η
に、蒸着捷たはスノぞツタリングによってニッケルNl
 −クロムOr 系の曾金膜を竹青させた後。
On the other hand, switching! ? 12.2'l and common electrode η
Then, nickel Nl is applied by vapor deposition or snow removal.
- After the chromium-or-based gold film has been dyed.

エツチングによって横幅30〜40μ4.ピッチ・…隔
62.5瑚プ程度のスイッチングwt極12.乙および
横@ I II 8 Elfの共通電極nを形成し、こ
れによって16ドツト/顛の解像力を得ている。なお、
これらの電極には酸化を防止するため、および、電気抵
抗を小ざくするため、金Au  メッキが施されている
Width 30~40μ4 by etching. Pitch...Switching wt pole with spacing of about 62.5 mm 12. A common electrode n is formed on the side and side @I II 8 Elf, thereby obtaining a resolution of 16 dots/frame. In addition,
These electrodes are plated with gold (Au) to prevent oxidation and reduce electrical resistance.

かくして、印加wL!j′?一方向に45°の偏光子を
介して直線偏光を、電極が対向する領域に照射するとと
もにこのv/L極間に電圧を印刀口すると、直線偏光に
次式に示すリタデー/ヨスγを蛍ける。
Thus, the application wL! j'? When linearly polarized light is irradiated through a 45° polarizer in one direction to the area where the electrodes face each other and a voltage is applied between the v/L poles, the linearly polarized light has a retardation/yos γ value expressed by the following equation. Let's go.

β−芋・島・d   ・・・・・・・・・・・・・・・
・・・(1)但し、λ:入射光波長 ・6:屈#高変化 d : PLZT基板の有効厚情 n:屈ffrも R:2rK電気光学定数 E:電界強電 をそれぞれ示す。
β-imo/island/d ・・・・・・・・・・・・・・・
...(1) However, λ: wavelength of incident light; 6: change in refractive index; d: effective thickness of the PLZT substrate; n: refractive ffr; and R: 2rK; electro-optic constant;

このようにして、リタデー/ヨンを受けた照射光を、偏
光−子と厘父位にある検光子によって検光すれば、電界
強度に応じた光の強弱が得られる。
By analyzing the irradiated light that has received retardation/ion in this way using an analyzer placed in front of the polarizer, the strength of the light can be obtained in accordance with the electric field strength.

このことは、 i’LZT基板に入射する偏光の強電を
II  、検光子通過陵の光の強Ifを■。 とすると
で表わづれる。
This means that the intensity of the polarized light incident on the LZT substrate is II, and the intensity If of the light passing through the analyzer is ■. It can be expressed as.

かくして、イ庄が印/70されたスイッチング電極11
 、12間(領域A)、捷た(グ、共通電極茨およびス
イッチングelL隊乙間(@域B)に照射された光は検
光子を通過し1反対に、電圧が印770貞れない領域の
光はゆ光子によって遮られることになり。
Thus, the switching electrode 11 marked with 70
, 12 (area A), the light irradiated between the common electrode thorns and the switching el L group (@area B) passes through the analyzer, and on the contrary, the voltage is 770 in the region where it is not clear. The light will be blocked by Yukoko.

画情報に基いてスイッチング電@12”!たぼzつに電
圧を印加すれば、これによって画像の復元が可能になり
、光プリンタまたは復写鴫に応用シれる一方、窒間変訓
器にも使用されている。
By applying a voltage to the switching voltages based on the image information, it becomes possible to restore the image, and while it can be applied to optical printers or duplicators, it can also be used in Nitoma transformation machines. is also used.

斯かる従来の光スイツチングアレイにあってぼ。This is different from conventional optical switching arrays.

解像力に対する要請から、スイッチングwl極の相対間
隔が必然的に狭くなり、予定した領域にのみ作用させよ
うとする電界が隣接する他のスイッチングwL極領域ま
で及び、いわゆる、クロストークという現象を伴うこと
となり、複写→または元プリンタに対しては解f象力が
低下するという欠点があった。
Due to the requirement for resolution, the relative spacing between the switching wl poles inevitably becomes narrower, and the electric field that is intended to act only on a predetermined region extends to other adjacent switching wl pole regions, resulting in the phenomenon of so-called crosstalk. Therefore, there is a drawback that the resolving power decreases when copying or using the original printer.

また、スイッチング電極の配設腎(を高くすると隣#畦
極間の静屯容業がm刃口し、これによって応答連間も遅
くなるという欠点があった。
In addition, if the height of the switching electrode is increased, the static capacity between adjacent ridges increases, which causes a delay in the response time.

本発明に十制の欠貞を除去−tろためになされたもので
、クロストークを十分に低く抑九るとともに隣接するス
イッチング纜極間の靜電容策を著しく小愼くすることで
解像力が高く且つ応答速度の速い光スイツチングアレイ
の提供を目的とする。
This was done in order to eliminate the ten disadvantages of the present invention, by suppressing crosstalk to a sufficiently low level and significantly reducing the silent current capacity between adjacent switching poles, thereby improving resolution. The object of the present invention is to provide an optical switching array with high performance and fast response speed.

上町目的を達成すイ)ために−を全開の光スイッチング
了レイは、透明な磁器基板の一面に、帯状の共;市(囃
おLぴこの共通屯◆と対回し且つ千鳥足状!< シて共
通電極の両側に耐酸される籾数のスイッチング填啜を設
け、λらに、この特性を改善するべく、磁器基板の他面
に)丁トマスクを設けるものである。
In order to achieve the Uemachi objective (a), a fully-open optical switching light is placed on one side of a transparent porcelain substrate in the form of a band; A switching pad for acid-resistant rice grains is provided on both sides of the common electrode, and a tin mask is provided on the other side of the porcelain substrate in order to improve this characteristic.

以下、添付図1面を参照して本発明を実施例に基いて説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on an embodiment with reference to FIG.

先ず、IBJ2図は本発明l(よる光スイツチングアレ
イの第1夾施例の構成を示す平面図で0図中31は両面
が光学研摩され厚みがほぼ30081 の磁器基板、3
2に11−ド鞠接続端32 aを肩し、$器基也31の
ほぼ中央部に帯状に形成された共通11極、33訃よび
34ハ共通w/を極32と対向し、且つ、千鳥足状にし
て#通電棒32の両側に配貨されたスイッチングi1.
6に、35hよび36はスイッチング113および真を
選択して電圧を印加する駆動直1略をそれぞれ示す。
First, Figure IBJ2 is a plan view showing the configuration of the first embodiment of the optical switching array according to the present invention.
The common 11 pole, 33 pole and 34 pole common w/ formed in a band shape approximately in the center of the holder 31 are placed opposite the pole 32, and The switching i1.
6, 35h and 36 indicate the switching 113 and the drive line 1 which selects true and applies voltage, respectively.

ここで、共通電極320幅ハ50μqに、スイッチング
[ff 33およびスイッチング電極34の横幅に(イ
)μ龍に、共通[極32とスイッチング電極33および
34との間隔a犯μlItにしてそれぞれ形成されてお
り、さらに、スイッチング電極33のピッチ、およびス
イッチング電極34σ)ピッチは125μ譚になってい
る。
Here, the width of the common electrode 320 is 50 μq, the width of the switching electrode 33 and the switching electrode 34 is (a) μ, and the distance between the common electrode 32 and the switching electrodes 33 and 34 is a distance μl It. Further, the pitch of the switching electrodes 33 and the pitch of the switching electrodes 34σ) are 125μ.

したがって、スイッチングに*33 、34U千鳥足状
にして共通電極32の両側に設けられているものの、共
通* 極32の長手方向に対して62.5μすのピッチ
で並べられており、全体として16ドツト/酊の解像力
が確保されている。
Therefore, although the switching *33 and 34U staggered patterns are provided on both sides of the common electrode 32, they are arranged at a pitch of 62.5 μm in the longitudinal direction of the common * electrode 32, making a total of 16 dots. / The resolution of drunkenness is ensured.

この場合、共通1[32とスイッチング[極33および
34とがそれぞれ対口する領域、↑なわち、5’eの透
過tl−制御し得る佃域に千鳥足状[2列に並ぶことに
なるが1列間隔が関μイ以下であれば画像の復元におい
て殆んど問題になく、この列間隔が50μdを超えたと
しても駆動回路35と駆動回路36との電圧印加タイミ
ングを変えることで、迭過尤の集束位置を一列に揃える
ことができる。
In this case, the area where the common 1 [32 and the switching poles 33 and 34 face each other, ↑ that is, the transmission tl of 5'e - will be arranged in two rows in the area where the transmission tl can be controlled. If the row spacing is less than or equal to 50 μd, there will be almost no problem in restoring the image. The over-likelihood focusing positions can be aligned.

かくして、共通電極32の一方の仙1に配役されたスイ
ッチング電極33の相対間隔、および、共通電FIiL
33の地方の側に配設されたスイッチング電極凋の相対
間隔灯従来の光スイッチングアVイにおけるスイッチン
グ電極の相対間隔のほぼ2倍となり。
Thus, the relative spacing of the switching electrodes 33 disposed on one side 1 of the common electrode 32 and the common electrode FIiL
The relative spacing of the switching electrodes disposed on the side of 33 is approximately twice the relative spacing of the switching electrodes in the conventional optical switching eye.

しかも1画情報に対して実質的に隣接する磁極33と讃
とげ共通[132e介して斜向かいに存在することから
、これらのスイッチング電極の相対間隔も亦、従来の光
スイッチングアレイの間隔のほぼ2igrKなっている
Moreover, since the magnetic poles 33 and the adjacent magnetic poles 33 are diagonally opposite to each other through the common electrode 132e for one image information, the relative spacing between these switching electrodes is also approximately 2igrK, which is the spacing of the conventional optical switching array. It has become.

このようにして1枚数のスイッチングWL暖を千鳥足状
にして共通電極の両I11に配設した場合には。
In this way, when one switching WL heater is arranged in a staggered manner on both sides of the common electrode I11.

由;圧を印加したスイッチング磁極による電界が。Due to the electric field caused by the switching magnetic pole to which pressure is applied.

電圧を印η口しないスイッチングlt権領域まで及ぶと
いう、従来の光スイツチングアレイの欠点が解消上れ、
しかも、隣接するスイッチングICE吟聞の静電容量が
格段に小さくなり、これによって、クロストークという
現象を阻正してs偉力が高められ、応答迷電を速くする
ことができる。
The disadvantage of conventional optical switching arrays is that they extend to the switching LT range where no voltage is applied.
Moreover, the capacitance of the adjacent switching ICE capacitance is significantly reduced, thereby preventing the phenomenon of crosstalk, increasing the power, and speeding up the response stray current.

次に、第3図は本発明による光スイツチングアレイの第
2実施例のlII成を示す断面図で1図中第2図と同一
符号を付したものげそれぞれ同一の敦累を示し、これら
以外の37汀共通重極32およびスイッチング電極33
 、34の対向伽域を通過する光の進路上にそれぞれ透
光窓37aを有する)オドマスクである。
Next, FIG. 3 is a cross-sectional view showing a second embodiment of the optical switching array according to the present invention. 37 common heavy poles 32 and switching electrodes 33 other than
, 34, each having a light-transmitting window 37a on the path of the light passing through the opposing canopy areas.

また、第4−はフォトマスク37を形成するためのマス
クを示し、実際には斜?R部40aが光を通過させ、窒
白部40bが光を遮るものであるが、ここでは、7万ト
エツチングによって残った部分のノミターンと一致する
ように陽陰を逆に示したものである。つまり、斜線都4
()aをエツチングによって残った部分、債白部40b
をエツチングされた窓とすれば、この第4□□□に示し
たと同じ・ξターンの7オトマスク37が6器基板31
に設けられている。
Also, No. 4- indicates a mask for forming the photomask 37, which is actually oblique? The R portion 40a allows light to pass through and the white nitrogen portion 40b blocks the light, but here the positive and negative portions are shown reversed to match the chime turn of the portion remaining after 70,000 etching. In other words, the diagonal capital 4
() The portion left after etching a, bond section 40b
If is an etched window, then the same ξ-turn 7 otomasks 37 as shown in this 4th
It is set in.

ここで−S器基板31の一面に共通′#を極32および
スイッチング電極33.34を設け、この磁器基板31
の他面に7オトマスク37を設ける具体的方法を次に述
べるつ 先ず1両面が光学研摩された磁器基′@11の片面にア
ルミニウムA1等の金M喚を一様に真壁蒸着し、これに
レジスト膜を塗布した鏝、84図のマスク40を被せて
露出現像し、これをエツチングすることでマスク40と
同一ノぐターンの7オトマスク37を形成する。この場
合、マスク40の空白1’N40b汀共通電嘩32とス
イッチングw1極33 、34とがそれぞれ対口する領
域に会わせて千鳥足状に配fWt大れている。
Here, a common '# pole 32 and switching electrodes 33 and 34 are provided on one surface of the ceramic substrate 31.
The specific method of providing the 7-oto mask 37 on the other side will be described below. First, gold M such as aluminum A1 is uniformly vapor-deposited on one side of the porcelain base '@11, which has been optically polished on both sides. A trowel coated with a resist film is covered with a mask 40 shown in FIG. 84, exposed and developed, and etched to form a seven-dimensional mask 37 having the same number of turns as the mask 40. In this case, the blank 1'N40b of the mask 40, the common electric wire 32 and the switching w1 poles 33 and 34 are arranged in a staggered manner to meet the respective opposing areas fWt.

次いで、フォトマスク37が形成されfC,面と反対の
磁器基板面に、素材がリン實銅のマスク(図示せず)を
用いて、ニッケルNl  −クロムCr  系台金を真
壁蒸着によって形成し、続いて金Au  を蒸宥して共
通電極32およびスイッチングIIl*33 、34を
同時に形成する。
Next, on the surface of the ceramic substrate opposite to the surface fC on which the photomask 37 is formed, a nickel Nl-chromium Cr base metal is formed by true wall evaporation using a mask (not shown) made of phosphor copper. Subsequently, gold (Au) is evaporated to simultaneously form the common electrode 32 and the switching II1*33, 34.

なお、磁器基板31の一面に杉成される共通電極32、
スイッチングwL極’33 、34と、磁器基板3】の
他面に形成ばれるフォトマスク37の相対的な位置会わ
せは、磁器基板31の厚与を考慮して、共通wL極32
とスイッチング電極33 、34の対向伽域を通過する
光の進路上に透光窓37 aがくるようにしている。
In addition, a common electrode 32 formed on one surface of the ceramic substrate 31,
The relative positioning of the switching wL poles 33 and 34 and the photomask 37 formed on the other surface of the ceramic substrate 3 is determined by considering the thickness of the ceramic substrate 31, and the common wL pole 32
The light-transmitting window 37a is placed on the path of light passing through the facing areas of the switching electrodes 33 and 34.

かくして、フォトマスク37を形成することで。Thus, by forming the photomask 37.

スイッチング[933,34を、千鳥状にして共通電極
32の両側に−11してもなお避は得ないクロストーク
に対しては祷光窓37 aの大きさを適切に選ぶことで
、不要な光をほぼ完全に遮断することができる。
Even if the switching [933, 34 is arranged in a staggered manner to -11 on both sides of the common electrode 32, the unavoidable crosstalk can be avoided by appropriately selecting the size of the light receiving window 37a. Light can be blocked almost completely.

次に第5図に本発明による光スイツチングアレイの@3
実施例の構成を示す断面図で1図中第3図と同一符号を
付したものにそれぞれ同−普たは同効の要素を示し、こ
れら以外の38は透明なガラス基板である。
Next, FIG. 5 shows @3 of the optical switching array according to the present invention.
In the cross-sectional view showing the structure of the embodiment, the same reference numerals as in FIG. 3 in each figure indicate the same elements or elements having the same effect, and the other 38 is a transparent glass substrate.

これに、fB器基板31の一面に形成される電極と。In addition, an electrode is formed on one surface of the fB device substrate 31.

その他面に形成さする)γ上マスク3フとの位置合わせ
が、第3図のWII成では蒸着工程の前に行なわれると
いう製造技術上の問題点を解Y1シようとするもので、
ガラス基板あの一面に上述したと同様な方法でフォトマ
スク37を杉成し、これを磁器基板讃に透明な光学接着
剤で接着している。
This is intended to solve the problem in manufacturing technology that alignment with the γ upper mask 3 (formed on other surfaces) is performed before the vapor deposition process in the WII formation shown in FIG.
A photomask 37 is formed on one side of the glass substrate in the same manner as described above, and this is adhered to the ceramic substrate using a transparent optical adhesive.

このような構成をとることによって、電極とフォトマス
クの位置合わせが容易、且つ、高梢凌で行なわれるとと
もに、磁器基板31をエツチング薬品による腐蝕から保
護することがTきる。
By adopting such a configuration, alignment of the electrode and the photomask can be easily and precisely performed, and the ceramic substrate 31 can be protected from corrosion caused by etching chemicals.

次に第6図は本発明による光スイツチングアレイを光プ
リンタに応用した例で1図中30に光スイッチングアフ
イ、51に40ゲンランゾまたは緑色螢光灯が甲いられ
る光源、52は反射韓、53に偏光子、5+4は検光子
、55は集束性光伝送体アレイ、56は感光体ドラムを
それぞれ示す。
Next, Fig. 6 shows an example in which the optical switching array according to the present invention is applied to an optical printer. , 53 is a polarizer, 5+4 is an analyzer, 55 is a convergent light transmitting array, and 56 is a photosensitive drum.

第6図において1光臨51の発生光が反射−52によっ
て集束され、偏光子53を介して光スイッチングアVイ
I)のwL極極対曲面スリット状に照射する。
In FIG. 6, one beam of light 51 is focused by reflection -52 and irradiated through a polarizer 53 onto a curved slit of the wL pole of the optical switching device VII).

ここで、スイッチング電極を選択してこれKM圧を印加
すると、共通電極との対同領域に電界が発生じ、電界の
二乗に比例した屈仇率電化を伴ってリタデーションを生
ずる。このリタデー/ヨンを生じた光が検光子54を通
過すると上述した(3)式の間係で光が透禍する。
Here, when a switching electrode is selected and a KM pressure is applied to it, an electric field is generated in the same area as the common electrode, and retardation occurs with refractive index electrification proportional to the square of the electric field. When this retarded light passes through the analyzer 54, it becomes transparent according to the equation (3) described above.

一方、電圧が印71+1 ?れない電qj対向領域では
電界が零であるため入射光に対して例等の変化も受けず
、検光子54と直交状態にあるためここで完全に婆WT
ジれる。
On the other hand, the voltage is 71+1? Since the electric field is zero in the region opposite the electric field qj, it does not undergo any change with respect to the incident light, and since it is perpendicular to the analyzer 54, it is completely
I can get angry.

かくしで、検光子54會通過した光を、集束性光伝送体
アレイ55によって感光体ドラム56に投射することで
、ここに静電潜像が得られる。すなわち。
By projecting the light that has passed through the analyzer 54 onto the photoreceptor drum 56 by means of the convergent light transmitter array 55, an electrostatic latent image is obtained there. Namely.

電気信号に愛社られた画情報を復元することができる。It is possible to restore image information that has been captured in electrical signals.

かかる1元プリンタにおいて、従来の光スイツチングア
レイと1本発明の光スイツチングアレイとをそれぞれ同
一の条件で作動させた場曾1本発明の光スイツチングア
レイを用いたものの方が物めで鮮明で、高速印字も可能
であった。
In such a one-source printer, when the conventional optical switching array and the optical switching array of the present invention are operated under the same conditions, the one using the optical switching array of the present invention is clearly clearer. High-speed printing was also possible.

以上1本発明を好適な実施例について説明したが、これ
1(限定ばれることなく、共通電極の幅。
The present invention has been described above with reference to a preferred embodiment (1) (without limitation, the width of the common electrode).

(13)                     
  IQクスイッチングwt啄の幅9よびピッチ、f1
?器基板の厚み、ならびに、電極材料等を適宜変更して
もよいことは勿論である。
(13)
IQ switching wt width 9 and pitch, f1
? Of course, the thickness of the device substrate, the electrode material, etc. may be changed as appropriate.

このことから明らかなように1本発明の光スイツチング
アレイによれば、解像力を一段と高め得るとともに応答
速度を著しく速くすることができる。
As is clear from this, according to the optical switching array of the present invention, the resolution can be further improved and the response speed can be significantly increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)および(b)i従来の光スイツチングアレ
イの構成を示す平面図、第2肉げ本発明による光スイツ
チングアレイの第1実施例の構成を示す平面図、第3図
に本発明による元スイッチングアレイの第2要施例の構
成を示す断面図、第4図は同冥施例の製造工程に用いる
マスクの平面図、第5図げ本発明による光スイツチング
アレイの第3実施例の構成を示す断面図、第6図は光ス
イツチングアレイを応用した元プリンタの構成を示す概
念図である。 11 、21.31・・・磁器基板、12.乙、33.
34・・・スイッチン、              
 (14)りiin、 12.32−・・共iM 電極
、 35.343−・駆a向M。 37・・・フォトマスク538・・・ガラス基板、40
・・・マスク。 加・・・光スイッチングアノイ+ 51・・・電源、5
2・・・反射鏡、53・・・偏光子、54・・・検光子
、55・・・隼束性元伝送体了Vイ、56・・・感光体
ドラム。 出願人代理人   猪 股    清
1(a) and (b) i A plan view showing the configuration of a conventional optical switching array; 2) A plan view showing the configuration of the first embodiment of the optical switching array according to the present invention; FIG. 4 is a cross-sectional view showing the configuration of a second embodiment of the optical switching array according to the present invention, FIG. 4 is a plan view of a mask used in the manufacturing process of the same embodiment, and FIG. FIG. 6 is a cross-sectional view showing the configuration of the third embodiment, and a conceptual diagram showing the configuration of the original printer to which the optical switching array is applied. 11, 21.31...porcelain substrate, 12. Otsu, 33.
34...Switch on,
(14) Riiin, 12.32-...Co-iM electrode, 35.343--Drive a direction M. 37... Photomask 538... Glass substrate, 40
···mask. Add... Optical switching annoy + 51... Power supply, 5
2...Reflector, 53...Polarizer, 54...Analyzer, 55...Hayabusi original transmission body, 56...Photoconductor drum. Applicant's agent Kiyoshi Inomata

Claims (1)

【特許請求の範囲】 1、透明な磁器基板の一面に、帯状の共通車FIi、を
設けるとともにこの共通電極と対回し、且つ。 千鳥足状にして前記共通電極の両側に複数のスイッチン
グに%を配役したことを特徴とする光スイッチング了レ
イ。 2、透明な磁器基板の一面に、帯状の共通電極を設ける
とともにこの共通!極と対回し、且つ。 千鳥足状にして前記共通電極の両側に複数のスイッチン
グ電極を配役し、@記田器基板の他面を有するフォトマ
スクを設けたことを%敵と丁^光スイッチングアレイ。 3、前記フォトマスクを透明なガラス基板上に杉成し、
このガラス基板を前記磁器基板の他面に接着した時計請
求の範囲第2項記載の尤スイッチングアVイウ
[Scope of Claims] 1. A strip-shaped common wheel FIi is provided on one surface of a transparent ceramic substrate and is opposed to the common electrode. An optical switching relay characterized in that a plurality of switching elements are arranged on both sides of the common electrode in a staggered pattern. 2. A strip-shaped common electrode is provided on one side of the transparent porcelain substrate, and this common! Opposed to the pole, and. A plurality of switching electrodes are placed on both sides of the common electrode in a staggered pattern, and a photomask is provided on the other side of the substrate to form an optical switching array. 3. Forming the photomask on a transparent glass substrate,
A switching device according to claim 2, wherein the glass substrate is bonded to the other surface of the ceramic substrate.
JP56193187A 1981-12-01 1981-12-01 Optical switching array Pending JPS5895321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56193187A JPS5895321A (en) 1981-12-01 1981-12-01 Optical switching array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56193187A JPS5895321A (en) 1981-12-01 1981-12-01 Optical switching array

Publications (1)

Publication Number Publication Date
JPS5895321A true JPS5895321A (en) 1983-06-06

Family

ID=16303746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56193187A Pending JPS5895321A (en) 1981-12-01 1981-12-01 Optical switching array

Country Status (1)

Country Link
JP (1) JPS5895321A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026927A (en) * 1983-07-25 1985-02-09 Matsushita Electric Ind Co Ltd Optical control element
JPH01266506A (en) * 1988-04-18 1989-10-24 Think Lab Kk Light beam splitting method and light beam splitting and modulating method
JPH01293315A (en) * 1988-05-20 1989-11-27 Think Lab Kk Light beam modulating device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6026927A (en) * 1983-07-25 1985-02-09 Matsushita Electric Ind Co Ltd Optical control element
JPH01266506A (en) * 1988-04-18 1989-10-24 Think Lab Kk Light beam splitting method and light beam splitting and modulating method
JPH01293315A (en) * 1988-05-20 1989-11-27 Think Lab Kk Light beam modulating device

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