JPS589348A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPS589348A
JPS589348A JP10790581A JP10790581A JPS589348A JP S589348 A JPS589348 A JP S589348A JP 10790581 A JP10790581 A JP 10790581A JP 10790581 A JP10790581 A JP 10790581A JP S589348 A JPS589348 A JP S589348A
Authority
JP
Japan
Prior art keywords
common connection
lead frame
notch
connection strip
supporting plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10790581A
Other languages
Japanese (ja)
Other versions
JPS6220706B2 (en
Inventor
Mikio Nishikawa
西川 幹雄
Hiroyuki Fujii
博之 藤井
Kenichi Tateno
立野 健一
Masami Yokozawa
横沢 真覩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP10790581A priority Critical patent/JPS589348A/en
Priority to CA000406545A priority patent/CA1195782A/en
Priority to DE8282106033T priority patent/DE3277757D1/en
Priority to US06/395,799 priority patent/US4482915A/en
Priority to DE198282106033T priority patent/DE69390T1/en
Priority to EP82106033A priority patent/EP0069390B1/en
Publication of JPS589348A publication Critical patent/JPS589348A/en
Priority to CA000471714A priority patent/CA1213678A/en
Publication of JPS6220706B2 publication Critical patent/JPS6220706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the deformation of a substrate supporting plate caused by the heating of a sealing mold by providing a notch to an area between narrow bands at the side of a second common connection band facing the substrate supporting plate. CONSTITUTION:A wedge-shaped notch 18 is made at an area between narrow bands 8, 9 at the side of a lead frame's second common connection band 10 facing a substrate supporting plate 1. Since the width of the common connection band 10 is locally narrowed at each notch portion, deformation due to the heating of a sealing mold is relaxed, which in turn reduces the substrate supporting plate deformation. The notch can also serve as a position adjuster by fitting a pin in it during molding, thereby effective sealing operation can be performed.

Description

【発明の詳細な説明】 本発明は、比較的大きな電力を取り扱うことのできる樹
脂封止形半導体装置を製造するために用いるリードフレ
ームに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a lead frame used for manufacturing a resin-sealed semiconductor device that can handle relatively large amounts of power.

近年、半導体装置の樹脂封止化が進み、たとえばかなり
大きな電力を取り扱うことのできるトランジスタも樹脂
封止構造とされるに至っているが、この樹脂封止形電力
用半導体装置では、これを組みたてるために用いるリー
ドフレームの基板支持部が放熱板を兼ね、半導体基板の
接着される面とは反対側の面が成型樹脂により覆われる
こと遅く露出する構造となっている。このような構造を
有する樹脂封止形電力用半導体装置は各種の機器にとり
つける際して露出する基板支持部を放熱板へ熱的に結合
されるが、このとき放熱板と基板支持部との間を絶縁板
等を介在させるなどして電気的に絶縁させる必要があっ
た。このため取り付は作業が煩雑となり、組立作業能率
の面で問題があった。
In recent years, the use of resin encapsulation in semiconductor devices has progressed, and for example, transistors that can handle considerably large amounts of power have also come to be encapsulated in resin. The substrate supporting portion of the lead frame used for the purpose of cooling also serves as a heat sink, and the surface opposite to the surface to which the semiconductor substrate is bonded is covered with molded resin and is later exposed. When a resin-encapsulated power semiconductor device having such a structure is installed in various devices, the exposed substrate support portion is thermally coupled to the heat sink, but at this time, the connection between the heat sink and the substrate support portion is It was necessary to provide electrical insulation by interposing an insulating plate or the like between them. For this reason, the installation work was complicated, and there was a problem in terms of assembly work efficiency.

このような不都合を排除するために、基板支持体の半導
体基板が接着される側とは反対側の面上を成型樹脂で薄
く被覆した絶縁構造の樹脂封止形半導体装置の実用化が
進められている。
In order to eliminate such inconveniences, the practical use of resin-sealed semiconductor devices with an insulating structure in which the surface of the substrate support opposite to the side to which the semiconductor substrate is bonded is thinly coated with molded resin is underway. ing.

第1図はかかる樹脂封止形半導体装置の組み立てに際し
て用いられるリードフレームとして、出願人が特願昭6
6−32229号で提案したIJ−ドフレームの平面図
であり、図中1はトランジスタ素子の接着される基板支
持部、2は放熱板への取り付けを可能にするためのねじ
止め用貫通孔、3.4.5は外部リード部、6は移送ピ
ッチの決定ならびに樹脂封止時の位置決めをなす孔7が
穿設された共通接続細条であり、さらに基板支持体1の
外部リード3に繋る辺とは反対側の辺から2本の細条8
,9が延び、これらが第2の共通接続細条1oに繋った
構造となっている。なお、第2の共通接続細条10には
樹脂封止工程で金型の一部と嵌合し、位置規正のための
孔11が形成されている。第2図は、このような形状の
リードフレームを用いて形成したトランジスタ組立構体
を樹脂で封止成型する状態を示す図であり、上下の金型
12と13の間に形成される空所内へ樹脂14を注入し
て成型がなされる。
FIG. 1 shows a lead frame used in assembling such a resin-sealed semiconductor device, which the applicant filed in a patent application in 1983.
This is a plan view of the IJ-do frame proposed in No. 6-32229, in which 1 is a substrate support part to which a transistor element is bonded, 2 is a through hole for screwing to enable attachment to a heat sink, 3.4.5 is an external lead part, 6 is a common connection strip in which a hole 7 is bored for determining the transfer pitch and positioning during resin sealing, and is further connected to the external lead 3 of the substrate support 1. Two strips 8 from the opposite side
, 9 are extended, and these are connected to the second common connection strip 1o. Note that a hole 11 is formed in the second common connection strip 10 to fit into a part of the mold during the resin sealing process and for position adjustment. FIG. 2 is a diagram showing a state in which a transistor assembly structure formed using a lead frame having such a shape is sealed and molded with resin. Molding is performed by injecting resin 14.

リードフレームは、外部リード部3〜6が一方の側にお
いて上下の金型によって挾持されるとともに、他方の側
でも細条10,11ならびに第2の共通接続細条8が上
下の金型によって挾持される。また第1の共通接続細条
6に設けた孔7に金型の突出部が嵌合(図示せず)する
ばかりでなく第2の共通接続細条1oの孔11にも金型
の突出部16が嵌合する。なお16はねじ止め用の孔を
形成するべく樹脂を部分的に排除する突起、17はトラ
ンジスタ素子である。
The lead frame has external lead parts 3 to 6 held between upper and lower molds on one side, and strips 10, 11 and second common connection strip 8 held between upper and lower molds on the other side. be done. Moreover, not only the protrusion of the mold fits into the hole 7 provided in the first common connection strip 6 (not shown), but also the protrusion of the mold fits into the hole 11 of the second common connection strip 1o. 16 is fitted. Note that 16 is a projection that partially removes the resin to form a hole for screwing, and 17 is a transistor element.

か\るリードフレームによって封止を行なえば、トラン
ジスタ素子17の接着された基板支持部1は、上下の金
型12,13によって挾持される外部リード3と細条1
0,11とにより支持されて、金型空所内に浮いた状態
で位置し、放熱板を兼ねる基板支持体の一方の主面(半
導体基板の接着面とは反対の面)の直下にも薄い樹脂の
層を形成した構造の樹脂封止形半導体装置を製造するこ
とができる。
If the sealing is performed using such a lead frame, the substrate support portion 1 to which the transistor element 17 is bonded will be connected to the external leads 3 and the strips 1 held between the upper and lower molds 12 and 13.
0 and 11, and is located in a floating state within the mold cavity, and is also directly under one main surface (the surface opposite to the adhesive surface of the semiconductor substrate) of the substrate support that also serves as a heat sink. A resin-sealed semiconductor device having a structure in which a resin layer is formed can be manufactured.

しかしながらか\るリードフレームを用いて封止成形す
る場合、第1の共通接続細条6、第2の共通接続細条1
o及び基板支持体1の形状及び厚みの差等によって、封
止工程での加熱時に熱変形を生ずる場合があり、各々の
共通接続細条に形成した位置規正用孔7および11に対
して封止金型の位置規正ピンが嵌合しにくくなること、
あるいは金型で挾持する際にリードフレームの一部が押
しつぶされ、封止成型不良が発生しやすいことなどの改
良すべき余地が残されていた。特に第2の共通接続細条
10は基板支持部1に対して機械的に強固に接続されて
おり、この第2の共通接続細条1oにおいて熱変形が生
じた場合、この変形による影響が基板支持部1へ及びや
すい。
However, when performing sealing molding using such a lead frame, the first common connection strip 6 and the second common connection strip 1
Due to differences in the shape and thickness of the substrate support 1 and the substrate support 1, thermal deformation may occur during heating in the sealing process. It becomes difficult to fit the positioning pin of the stopper type,
Alternatively, when the lead frame is clamped with a mold, a portion of the lead frame is crushed, which tends to cause sealing molding defects, which leaves room for improvement. In particular, the second common connection strip 10 is mechanically and firmly connected to the substrate support 1, and if thermal deformation occurs in this second common connection strip 1o, the influence of this deformation will be It easily reaches the support part 1.

本発明は、かかるリードフレームにおける不都合の発生
を排除することのできる改良されたリードフレームを提
供するものであり、本発明のリードフレームの特徴は第
1図で示したリードフレームの一部くとも第2の共通接
続細条に、熱変形の防止と封止成型時の位置決め部とし
て作用する切欠部を等しいピッチで形成したところにあ
る。
The present invention provides an improved lead frame that can eliminate the occurrence of such inconveniences in lead frames, and the lead frame of the present invention has the following features: The second common connection strip is provided with notches formed at equal pitches to prevent thermal deformation and to function as positioning portions during sealing molding.

以下に本発明のリードフレームの実施例を示す第3図を
参照して詳しく説明する。
A detailed explanation will be given below with reference to FIG. 3 showing an embodiment of the lead frame of the present invention.

第3図は本発明の実施例にかかるリードフレームの平面
形状を示す図である。その全体的な形状は第1図で示し
たリードフレームと同じである。
FIG. 3 is a diagram showing a planar shape of a lead frame according to an embodiment of the present invention. Its overall shape is the same as the lead frame shown in FIG.

第1図で示したリードフレームと異る点は、第2の共通
接続細条1oの基板支持部1と対向する側の辺で、しか
も細条8と9との間に位置する部分に、たとえば、くさ
び形の切欠部18が形成されている点である。このよう
に切欠部18が形成された本発明のリードフレームでは
、第2の共通接続細条10の幅が切欠部の形成部分にお
いて局部的に狭くなり、この部分で封止金型による加熱
に基く変形が緩和され、したがって、基板支持体1への
変形の影響が少くなる。
The difference from the lead frame shown in FIG. 1 lies in the side of the second common connection strip 1o facing the substrate support section 1, and in the part located between the strips 8 and 9. For example, a wedge-shaped notch 18 is formed. In the lead frame of the present invention in which the notch 18 is formed, the width of the second common connection strip 10 is locally narrowed in the part where the notch is formed, and this part is not easily heated by the sealing mold. The underlying deformation is relaxed, and therefore the influence of the deformation on the substrate support 1 is reduced.

また、切欠部18は封止成型時に位置規正ピンが嵌合す
る位置規正部としても作用するが、図示するようにくさ
び形の形状をしているため、位置規正ピンと切欠部との
相対的な関係に多少のずれが生じたとしても、位置規正
ピンに確実に切欠部18に嵌入するところとなり、この
嵌入の過程で、各基板支持部の位置を正しい位置に修正
する規正効果が奏される。したがって、極めて良好な封
止作業が可能となり、位置規正の不備によって生じる封
止成型不良が著るしく減少する。
Furthermore, the notch 18 also functions as a positioning part into which the positioning pin fits during sealing molding, but since it has a wedge shape as shown in the figure, the positioning pin and the notch are relative to each other. Even if a slight deviation occurs in the relationship, the positioning pin will surely fit into the notch 18, and in the process of this fitting, a regulating effect will be produced to correct the position of each board support part to the correct position. . Therefore, extremely good sealing work is possible, and sealing molding defects caused by inadequate positioning are significantly reduced.

なお、図示する例では、切欠部18の角度を約900に
設定しているが、この角度に設定した場合封止成型前の
組立工程で実施されるダイスボンドあるいはワイヤボン
ドに際してのリードフレームの移送における位置規正面
で特に良好な結果が得られた。なお、以上の実施例では
、切欠部18の形状をくさび形としたが、たとえば第4
図で示すように台形あるいは略半楕円形としてもよい。
In the illustrated example, the angle of the notch 18 is set to approximately 900 degrees, but if this angle is set, the lead frame will not be transferred during die bonding or wire bonding performed in the assembly process before sealing molding. Particularly good results were obtained on the positioning plane. In the above embodiment, the shape of the notch 18 is wedge-shaped.
As shown in the figure, it may be trapezoidal or approximately semi-elliptical.

さらに切欠部の形成位置ならびに形成辺についても図示
するところに特定されるものではなく、基板支持体間の
第2の共通接続細条部分としてもよい、。
Further, the position and side of the notch are not limited to those shown in the drawings, but may be formed as a second common connection strip between the substrate supports.

また、第1の共通接続細条の側にも形成してもよい。It may also be formed on the side of the first common connection strip.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来の樹脂封止形半導体装置用IJ−ドフレ
ームの形状を示す平面図、第2図はその封止状態を示す
断面図、第3図は本発明の樹脂封止形半導体装置用リー
ドフレームの形状を示す平面図、第4図は切欠部の形状
を示す図である。 1・・・・・・基板支持部、2・・・・・・ねじ止め用
の孔、3 、4 、6 壷@@@mm外部す−ド部、5
 、10 mmm@@@共通接続細条、7,11・・・
・・・位置決め用の孔、8.90・・・−細条、12.
13−・・・e金型、14・・・・・・樹脂、15・・
・・・・金型の突起、16・・・・・・ねじ止め用の孔
を形成するための金型の突起、17・・・・・・トラン
ジスタ素子、18・・・・・・切欠部。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 第2図 第3図 第4図 9j     /σ
FIG. 1 is a plan view showing the shape of a conventional resin-sealed IJ-doped frame for a semiconductor device, FIG. 2 is a sectional view showing its sealed state, and FIG. 3 is a resin-sealed semiconductor device according to the present invention. FIG. 4 is a plan view showing the shape of the device lead frame, and FIG. 4 is a diagram showing the shape of the notch. 1... Board support part, 2... Hole for screw fixing, 3, 4, 6 Pot@@@mm external cup part, 5
, 10 mm @ @ common connection strip, 7, 11...
...Positioning hole, 8.90...-Strip, 12.
13-... e mold, 14... resin, 15...
...Protrusion of the mold, 16...Protrusion of the mold for forming a hole for screwing, 17...Transistor element, 18...Notch . Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 4 9j /σ

Claims (4)

【特許請求の範囲】[Claims] (1)第1の共通接続細条、同共通接続細条から同一方
向へ延びる複数本の外部リード部、同外部リード部の1
本の先端部に繋る放熱板を兼ねる基板支持部、同基板支
持部の前記外部リード部との連繋部側とは反対の反対側
に一端が繋る少くとも2本の細条および同細条の他端に
繋り、前記第1の共通接続細条と基板支持部をはさんで
向い合う第2の共通接続細条を有するとともに、同第2
の共通接続細条に位置決めならびに熱変形緩和用の切欠
部が形成されていることを特徴とするリードフレーム。
(1) A first common connection strip, a plurality of external lead portions extending in the same direction from the common connection strip, and one of the same external lead portions.
A board support part that also serves as a heat sink that connects to the tip of the book, at least two thin strips that have one end connected to the opposite side of the board support part that is opposite to the connecting part side with the external lead part, and a second common connection strip connected to the other end of the strip and facing the first common connection strip across the board support portion;
A lead frame characterized in that a notch for positioning and thermal deformation mitigation is formed in the common connection strip of the lead frame.
(2)切欠部が2本の細条間に位置する第2の共通接続
細条部分に形成されていることを特徴とする特許請求の
範囲第1項に記載のリードフレーム。
(2) The lead frame according to claim 1, wherein the notch is formed in the second common connection strip portion located between the two strips.
(3)切欠部の形状がくさび形2台形もしくは略半楕円
形のいずれかであることを特徴とする特許請求の範囲第
1項に記載のリードフレーム。
(3) The lead frame according to claim 1, wherein the shape of the notch is either a wedge-shaped bitrapezoid or a substantially semi-ellipse.
(4)切欠部の形状がくさび形であり、爽角が約900
 に選定されていることを特徴とする特許請求の範囲第
1項に記載のリードフレーム。
(4) The shape of the notch is wedge-shaped, and the cutting angle is approximately 900.
The lead frame according to claim 1, wherein the lead frame is selected as follows.
JP10790581A 1981-07-06 1981-07-09 Lead frame Granted JPS589348A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP10790581A JPS589348A (en) 1981-07-09 1981-07-09 Lead frame
CA000406545A CA1195782A (en) 1981-07-06 1982-07-05 Lead frame for plastic encapsulated semiconductor device
DE8282106033T DE3277757D1 (en) 1981-07-06 1982-07-06 Lead frame for plastic encapsulated semiconductor device
US06/395,799 US4482915A (en) 1981-07-06 1982-07-06 Lead frame for plastic encapsulated semiconductor device
DE198282106033T DE69390T1 (en) 1981-07-06 1982-07-06 LADDER FRAME FOR SEMICONDUCTOR ARRANGEMENT IN PLASTIC ENCLOSURE.
EP82106033A EP0069390B1 (en) 1981-07-06 1982-07-06 Lead frame for plastic encapsulated semiconductor device
CA000471714A CA1213678A (en) 1981-07-06 1985-01-08 Lead frame for plastic encapsulated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10790581A JPS589348A (en) 1981-07-09 1981-07-09 Lead frame

Publications (2)

Publication Number Publication Date
JPS589348A true JPS589348A (en) 1983-01-19
JPS6220706B2 JPS6220706B2 (en) 1987-05-08

Family

ID=14471032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10790581A Granted JPS589348A (en) 1981-07-06 1981-07-09 Lead frame

Country Status (1)

Country Link
JP (1) JPS589348A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015029143A (en) * 2008-08-29 2015-02-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Resin encapsulated semiconductor device and method of manufacturing the same, and lead frame
US9905497B2 (en) 2008-08-29 2018-02-27 Semiconductor Components Industries, Llc Resin sealing type semiconductor device and method of manufacturing the same, and lead frame

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015029143A (en) * 2008-08-29 2015-02-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Resin encapsulated semiconductor device and method of manufacturing the same, and lead frame
US9905497B2 (en) 2008-08-29 2018-02-27 Semiconductor Components Industries, Llc Resin sealing type semiconductor device and method of manufacturing the same, and lead frame

Also Published As

Publication number Publication date
JPS6220706B2 (en) 1987-05-08

Similar Documents

Publication Publication Date Title
US4637130A (en) Method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor
JPH0571183B2 (en)
EP0069390B1 (en) Lead frame for plastic encapsulated semiconductor device
JPH0228894B2 (en)
JPH06140563A (en) Semiconductor device
JPS6249742B2 (en)
JPS60137042A (en) Resin-sealed semiconductor device
JPS589348A (en) Lead frame
JPH08204083A (en) Lead frame for semiconductor device
JPS6223097Y2 (en)
JPH0244147B2 (en)
JPS6244815B2 (en)
JPH0423329Y2 (en)
JP2508567B2 (en) Method for manufacturing semiconductor device
JPH0720921Y2 (en) Resin sealed semiconductor device
JPH0494153A (en) Plastic molded type semiconductor package
JP2506933Y2 (en) Resin sealed semiconductor device
JPS6246272Y2 (en)
JPS5812455Y2 (en) Lead frame for semiconductor devices
JP2561470Y2 (en) Insulation-sealed electronic components
JPH01179439A (en) Resin sealed semiconductor device
JPH0512857B2 (en)
JPS60178636A (en) Semiconductor device
JPH0325934B2 (en)
JPS6056309B2 (en) Lead frame and its manufacturing method