JPS5892117A - Surface acoustic wave filter - Google Patents

Surface acoustic wave filter

Info

Publication number
JPS5892117A
JPS5892117A JP19035981A JP19035981A JPS5892117A JP S5892117 A JPS5892117 A JP S5892117A JP 19035981 A JP19035981 A JP 19035981A JP 19035981 A JP19035981 A JP 19035981A JP S5892117 A JPS5892117 A JP S5892117A
Authority
JP
Japan
Prior art keywords
film
pattern
sound
acoustic wave
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19035981A
Other languages
Japanese (ja)
Inventor
Junji Inui
乾 順治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19035981A priority Critical patent/JPS5892117A/en
Publication of JPS5892117A publication Critical patent/JPS5892117A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02905Measures for separating propagation paths on substrate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02842Means for compensation or elimination of undesirable effects of reflections

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To obtain a surface acoustic wave filter with good characteristics through high position accuracy and a thick sound absorbing film, by forming the sound absorbing film pattern through the use of a photopolymer film. CONSTITUTION:After a pattern consisting of input and output transducers 1, 4 and a multistrip coupler 3 is formed on a piezoelectric crystal substrate 2 with a vacuum deposition method and photoetching technology, a photopolymer film is press-stuck onto the substrate, sound absotbing film patterns 7, 8, 9 are sensitized with the close or projective exposure. When the photopolymer film is of negative type, the pattern is formed by using a phenomenon that the light irradiated part becomes insoluble to a developer, and when the film is of positive type, a phenomenon that the light irradiated part becomes soluble is used.

Description

【発明の詳細な説明】 (1)発明の技術分野 本発明はホトポリマーフィルムを用いて吸音膜パターン
を形成してなる弾性表l1li波フィルタに@する@ (2)技術の背最 弾性表面波フィルタはニオブ酸リチウム(LiNbOs
)タンタル酸リチウム(LiT10m )などの圧電結
晶をに板とし−この上に櫛−が互に囃み合りた形状の櫛
l1liil状電極からなる入カドランスジエサおよび
出カドランスジエサを圧電基板の両■に配激し、この両
トランスジエサの中間にすだれ状のマルチストリップカ
プラを備えた素子であり、両トランスジ1′?の背4に
部およびこの側面に互って吸音誤パターンが配置されて
いる・ 第1図は弾性表面波フィルタにおける電極および吸音膜
の配置を示す構成図である・ ここで入カドランスジエサ1の電極に高周波の電気信号
管印加すると、電気個−trtFi櫛−状亀他の形状で
定まる周波数特性をも9表面mK&換されて圧電結晶2
の上を伝播し、マルチストリップカプラ3にお−で電気
信号に変換され、マルチストリップカプラ3目身で再び
表面波に変換されて圧電結晶2の上を伝播し、出カドラ
ンスジエサ4において再び電気信号としてMRヤ出され
る。
Detailed Description of the Invention (1) Technical Field of the Invention The present invention relates to an elastic surface acoustic wave filter formed by forming a sound-absorbing film pattern using a photopolymer film. The filter is made of lithium niobate (LiNbOs)
) A piezoelectric crystal such as lithium tantalate (LiT10m) is used as a plate, and an input cadence changer and an output cadence changer consisting of comb-shaped electrodes with interlocking combs are arranged on both sides of the piezoelectric substrate. In fact, it is an element that has a blind-shaped multi-strip coupler between the two transformers, and both transformers 1'? Sound-absorbing false patterns are arranged alternately on the back 4 and on the sides of the filter. Figure 1 is a configuration diagram showing the arrangement of electrodes and sound-absorbing membranes in a surface acoustic wave filter. When a high frequency electric signal tube is applied to the piezoelectric crystal 2, the frequency characteristics determined by the shape of the electric piece - trtFi comb-shaped turtle etc. are changed to 9 surface mK & piezoelectric crystal 2
It propagates above the piezoelectric crystal 2, is converted into an electrical signal by the multi-strip coupler 3, is converted again into a surface wave by the multi-strip coupler 3, propagates above the piezoelectric crystal 2, and is converted into an electrical signal again by the output transducer 4. MR is issued as.

か\る構成のフィルタにおいて信号伝播の表面波以外に
各種の不費妓が存在する。
In a filter with such a configuration, there are various disadvantages other than the surface waves of signal propagation.

例えば圧電結蟲中管伝僧するバルク波があり、を大入カ
ドランスジat1より伝播される表向波の中にも出カド
ランスジエサ4で反射されて入カドランスジエサ1にま
で戻9、こ\で再反射されて出カドランスジエサ4に達
する三1音会反射があり、壇た入カドランスジエサlよ
りの表面波が反対方向に伝播して結晶基板の端面5に到
り、こ\で反射されて出カドランスジエサ4に管で達す
るもの、また出カドランスジエサ4よりの反射波が結晶
基板の端面6に到シ、ここで再び反射して入カドランス
ジエサIK向は伝播するものなど各種の不t’波があり
1これらに対してはトランスジエサの電極配置を変える
とか、櫛歯電極の形状管変えて反射波を相殺するなども
槽の対策が施されているが、結1基板の端面5,6にお
け為反射波及び対同電極以外の方向に伝播する不要波に
対しては吸音膜によりて吸収する手段がとられる。
For example, there is a bulk wave transmitted through a piezoelectric coil, and even in the surface wave propagated from the large input quadrangle sensor 4, it is reflected by the output quadrangle sensor 4 and returns to the input quadrangle sensor 19, and is re-reflected at this \. The surface wave from the incoming quadrature resistor 1 propagates in the opposite direction and reaches the end face 5 of the crystal substrate, where it is reflected and reaches the output quadrature resistor 4. There are various types of non-t' waves, such as waves that reach the output tube, and waves that are reflected from the output radiator 4 and reach the end face 6 of the crystal substrate, where they are reflected again and propagate in the direction of the input radiator IK. In this case, countermeasures have been taken such as changing the electrode arrangement of the transformer or changing the shape of the comb-shaped electrode to cancel out the reflected waves. Measures are taken to absorb unnecessary waves propagating in directions other than the same electrode using a sound absorbing film.

例えば纒1図において入カドランスジエサ1および出カ
ドランスジエサ4の背部にジグサグ形の吸音膜7ふ・よ
び8を設け、トランスジエサより反対11に伝播する不
要波を吸収するようにしているOこ\で吸音膜のパター
ン7.8がジグザグ形となうていゐ理由は吸音膜で吸収
されなくて反射する不要波をトランスジエサ以外の方向
に伝播させる丸めであ〕、この場合ジグザグ形級音換の
屈曲点の位置10ellの位置およびパターン精度はフ
ィルタ特性に大きな影勧を与える0 第2図は吸音膜7の屈曲点lOの部分の拡大図で左下シ
の斜線で示した吸音膜の設計位f117がパターン形成
の際にマスクの位置ずれによシ右下りの斜線゛で示した
吸音膜7′の位11に形成され%また屈曲点10を形成
すべきものが塗膜乾燥酸化の際K“だれ#によす彎曲し
た屈曲点10′となうた場合を考へると表面波1はトラ
ンスジユーサを避けて反射される点で影@IFiないが
表面波b11元の伝播方向に反射され、当初子關した方
向から伝播してきた不J&波を除去できなくなる◎また
纂1図においてマルテストリップカ123を通りほぼ対
称形に配置されてい、&@f碩9はトランスジエサ1.
4を構成する償形電他が菖みづけ#1成をとるためトラ
ンスジエサよシマルナストリップカプラ3以外の方向に
伝惰する不要波を吸収するために設けられるものである
が、この吸音膜9の設計位置よりのずれはフィルタの遥
過域脅性に敏感に影會を及ぼしている。
For example, in Figure 1, zig-sag-shaped sound-absorbing films 7 and 8 are provided on the backs of the input and output transducers 1 and 4 to absorb unnecessary waves propagating in the opposite direction 11 from the transducer. The reason why pattern 7.8 has a zigzag shape is that it is rounded so that unnecessary waves that are not absorbed by the sound absorbing film but are reflected are propagated in a direction other than the transducer. The position and pattern accuracy of position 10ell have a large influence on filter characteristics.0 Figure 2 is an enlarged view of the bending point lO of the sound absorbing film 7, and the design position f117 of the sound absorbing film indicated by diagonal lines in the lower left corner is where the pattern is formed. Due to misalignment of the mask, the part that should form the sound absorbing film 7' at position 11 indicated by the diagonal line downward to the right, and the part that should form the bending point 10, was damaged by the K' drip during the drying and oxidation of the paint film. Considering the case of curved bending point 10', the surface wave 1 is reflected at the point avoiding the transducer, so there is no shadow @IFi, but the surface wave b11 is reflected in the original propagation direction, and is reflected in the original direction. It becomes impossible to remove the undesired J& waves propagated from the transducer 1. In Figure 1, the transducer 1.
This sound absorbing film 9 The deviation from the designed position has a sensitive effect on the filter's far-range threat.

(3)  従来技術と問題点 ストリップカプラ3などの金属膜部分は真空lIA看お
よびホトエツチングよりなる写真11!iI勘技術(ホ
トリックラフイ)Kよ如同時に形成さ7′IるためO相
互のパターンの位置ずれは無いが一級音膜はこれらのパ
ターン形成後にスクリーン印刷法で形成されるための設
計位置よりの多少のずれは免力rれす、またスクリーン
後は加熱硬化する必要が69この除光に第2図で説明し
た“だれ“の勤先により銑角をもつ屈折S全弁たせるこ
とLfia*t、、<これらが弾性表面波フィルタの通
過域骨性のバラツキの原因となりている。
(3) Prior art and problems The metal film parts such as the strip coupler 3 were vacuum IIA-viewed and photo-etched as shown in Photo 11! iIntuitive technology (Photographic Roughing) Since the patterns are formed at the same time, there is no misalignment of the patterns.The first-class sound membrane is formed by screen printing after these patterns are formed, so the position is slightly different from the designed position. 69 It is necessary to heat and harden the screen after the screen is removed. 69 For this light removal, a refractive S full valve with a pig angle should be added depending on the location of "who" explained in Fig. 2 Lfia*t, , <These are the causes of variations in the passband bone quality of surface acoustic wave filters.

場で一吸f膜の必安粂件としては吸音効果が大きく着た
長期安定性を備えていることが挙げられるOこ\で吸音
効果は使用する材fNおよび塑麟厚に依存し1その厚さ
としては少くともaio、smが必要である◎そのため
従来はオレオ倒膚戒はエポキシ111脂などの高分子材
料を用いスクリーン印刷法により形成していた〇 然し乍ら一度塗りで数10μmの膜厚のパターンを形成
することは不可能であり、またスクリーン印刷法による
位置精度は土50μm程度であ抄1繰返し印刷して膜厚
管厚くする場合は大幅に位置精度が劣る結果として、厚
さと位置精度とを両立させることは不可能とさねていた
0 (4)発明の目的 本発明は位置f1111tが高く且つ厚い吸音膜を形成
することを目的とL5、その方法としてホトポリマフィ
ルム會ホトエツチングして@&を膜パターンを形成する
ものである。
In the field, the essential features of a single-absorption film are that it has a large sound-absorbing effect and long-term stability.The sound-absorbing effect depends on the material used and the plastic thickness. The thickness must be at least AIO or SM ◎ Therefore, conventionally, oleo antidermatology was formed using a screen printing method using a polymeric material such as epoxy 111 fat. It is impossible to form a pattern using the screen printing method, and the positional accuracy of the screen printing method is approximately 50 μm.If the film is thickened by printing repeatedly, the positional accuracy will be significantly inferior, resulting in a problem with the thickness and position. (4) Purpose of the Invention The purpose of the present invention is to form a sound absorbing film with a high position f1111t and a high thickness. This is used to form a film pattern using @&.

(5)発明の構成 本発明の実施にはホトポリマーフィルムを用いるO このフィルム#i感光性をもち任意に目的物に展層して
使用するタイプの合成樹脂からなるフィルムでこの種の
フィルムは厩にホトポリマーとして市販されている。(
例えばDupond社ホトボリマーフィルム) 本発明は圧電結晶基板上に真空蒸着法および写真蝕刻技
術により人出力トランスジエサおよびマルチストリップ
カプラからなるパターンを形成したる後、基板上にホト
ポリマーフィルムを圧着し密着露光或Fi投影露光によ
り吸音膜パターンを感光せしめ、ホトポリマーフィルム
がネガタイプの場合は光照射部が現像液に不溶となる現
象を利用し、ポジタイプの場合は光照射部が可溶となる
現象を利用してパターンf形成するものである。
(5) Structure of the Invention A photopolymer film is used to carry out the present invention. This film #i is a film made of a synthetic resin that has photosensitivity and can be used by arbitrarily spreading it onto an object. It is commercially available as a photopolymer. (
For example, Dupond's photopolymer film) In the present invention, a pattern consisting of a human output transformer and a multi-strip coupler is formed on a piezoelectric crystal substrate by vacuum evaporation and photolithography, and then a photopolymer film is pressure-bonded onto the substrate and exposed to close contact. The sound-absorbing film pattern is exposed to light by Fi projection exposure, and if the photopolymer film is a negative type, the light irradiated part becomes insoluble in the developer, and if it is a positive type, the light irradiated part becomes soluble. Then, a pattern f is formed.

なお必要とする厚このホトポリマーフィルムが市販され
ている場合はこt’Lfそのまま利用すhば便利である
ことは云うまでもない・ このような既製のフィルムを用いて写真蝕刻法によりパ
ターンを形成する場合はスクリーン印刷法で形成する場
合のように位置合わゼがずれることがなくまた“だt、
IIの発生もない六め伸めて位置ffIItの高い吸音
膜パターンを作ることができる。
It goes without saying that if a photopolymer film with the required thickness is commercially available, it is convenient to use it as is. Patterns can be created using photolithography using such a ready-made film. When forming, there is no misalignment unlike when forming using a screen printing method.
A sound-absorbing film pattern with a high position ffIIt can be created by extending it to the sixth position without the occurrence of II.

(6)発明の実施例 32〜38MHzKJ過mtもつ弾性表面波フィルタに
ついて吸音展ハターン會ボトボリマーフィルムを用いて
作シ、その効果全駒べた。使用したボトボリツーフイル
ム社I4厚が60±5μmの1)upond社製フ4ル
ム730FRである。
(6) Example 3 of the Invention A surface acoustic wave filter having a frequency of 2 to 38 MHz KJ was produced using a sound-absorbing layered bottom polymer film, and its effects were fully evaluated. 1) Film 730FR manufactured by Upond Co., Ltd. was used, and the thickness of I4 was 60±5 μm.

その結果入出カドランスジエサおよびマルチストリップ
カプラのパターンと’lfmパターンとの位置PII曳
は目榛値である±30声m以内が充分に造成でき、吸音
効果として主個号比−43dBのフィルタ1得ることが
できた◎ 一方従来のスクリーンプリント法で膜厚15〜30μm
の吸音膜を形成する場合は位l1lk?*pLは±50
μm壕な生傷号比は一↓1〜42dBであり一本発明の
実施によりフィルタ特性が改良された。
As a result, the position PII between the input/output quadrangle resistor and the multi-strip coupler pattern and the 'lfm pattern can be sufficiently created within ±30 m, which is the target value, and a filter 1 with a main signal ratio of -43 dB can be obtained as a sound absorption effect. ◎ On the other hand, with the conventional screen printing method, the film thickness was 15 to 30 μm.
When forming a sound absorbing film, the position l1lk? *pL is ±50
The μm trench signal ratio is 1↓1 to 42 dB, and the filter characteristics have been improved by implementing the present invention.

(7)  発明の効果 本発明は従来のフィルタ集子の製造において吸音膜パタ
ーンはスクリーン印刷法により形成されているが、素子
目体の寸法が11X3a1機度と小さいため位置合わせ
精度が惑〈特性のバシツキが大きく着た厚い吸f膜の形
成が困紐でわりたのに対し、ホトポリマーフィルムを&
看しホトエツチングによ〕パターン管形成する本方法を
用いることにより従来の欠点が是正されへ性のよい弾性
表面tlIフィルタの製作が可能となりな0
(7) Effects of the Invention The present invention shows that in the conventional manufacturing of filter collectors, the sound-absorbing film pattern is formed by screen printing, but because the dimensions of the element eye are as small as 11x3a1, the alignment accuracy is confusing. While the formation of a thick f-absorbing film caused by large scratches was difficult, the photopolymer film
By using this method of forming patterned tubes (by photo-etching), the drawbacks of the conventional methods can be corrected, and it is now possible to manufacture an elastic surface tlI filter with good bendability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は弾性表面波フィルタの電自と吸音膜の配電を示
す構成図また第2図は吸音膜パターンの屈折部分の拡大
図である◎ 図Kkl、−tて、IH人カドランスジエサ、3Fiマ
ルチストリツプカプラ、4は出力トランスジエす、7.
8.9#−j吸音膜パターン。
Figure 1 is a configuration diagram showing the electric power distribution of the surface acoustic wave filter and the sound-absorbing film, and Figure 2 is an enlarged view of the refraction part of the sound-absorbing film pattern. Strip coupler, 4 is output transformer, 7.
8.9#-j sound absorbing membrane pattern.

Claims (1)

【特許請求の範囲】[Claims] 圧電結晶基板上に少くとも入カドランスジエサ、出カド
ランスジエサおよび吸音膜などからなるパターンを設け
てなゐ弾性表面波フィルタにおいて、吸音誤パターンが
ホトポリマーフィルム1用いてなることt%黴とする弾
性表thlrI!フィルタ0
In a surface acoustic wave filter in which a pattern consisting of at least an input cadence detector, an output radiator detector, a sound absorbing film, etc. is provided on a piezoelectric crystal substrate, the elasticity table thlrI assumes that the sound absorption error pattern is formed by using the photopolymer film 1. ! filter 0
JP19035981A 1981-11-27 1981-11-27 Surface acoustic wave filter Pending JPS5892117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19035981A JPS5892117A (en) 1981-11-27 1981-11-27 Surface acoustic wave filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19035981A JPS5892117A (en) 1981-11-27 1981-11-27 Surface acoustic wave filter

Publications (1)

Publication Number Publication Date
JPS5892117A true JPS5892117A (en) 1983-06-01

Family

ID=16256870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19035981A Pending JPS5892117A (en) 1981-11-27 1981-11-27 Surface acoustic wave filter

Country Status (1)

Country Link
JP (1) JPS5892117A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000046920A1 (en) * 1999-02-08 2000-08-10 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device and method of manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000046920A1 (en) * 1999-02-08 2000-08-10 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device and method of manufacture thereof
US6534901B1 (en) 1999-02-08 2003-03-18 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device and method of manufacture thereof
US6848153B2 (en) 1999-02-08 2005-02-01 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a surface acoustic wave device

Similar Documents

Publication Publication Date Title
Hashimoto et al. Surface acoustic wave devices in telecommunications
EP0585863B1 (en) Surface acoustic wave device
US4006438A (en) Electro-acoustic surface-wave filter device
US6760960B2 (en) Method of forming electrode pattern of surface acoustic wave device
JPS5892117A (en) Surface acoustic wave filter
JPS58124316A (en) Dispersed delay line using surface elastic wave
JPH09503599A (en) Surface acoustic wave device for controlling high frequency signals using modified crystalline material
JPS6043912A (en) Surface acoustic wave resonator
JP2628985B2 (en) Improved surface acoustic wave filter
JPS61171211A (en) Electric filter actuated by sound wave
JPS5884517A (en) Surface acoustic wave transducer
EP0200304A2 (en) Saw devices including resistive films
JPS5830216A (en) Acoustic wave device
JPS6033531A (en) Optical waveguide lens
JPH03119816A (en) Two-terminal pair surface acoustic wave resonator and surface acoustic wave filter
JPS60246634A (en) Manufacture of elastic surface wave device
JPH0897673A (en) Surface acoustic wave element and its manufacture
JPH0241925B2 (en)
JPH035753A (en) Formation of thin film pattern
US4134087A (en) Amplitude weighted surface acoustic wave device
Woods Reflective array compressors using 180° reflecting metal dot arrays
JP3031728B2 (en) Reticle and exposure equipment
Lee et al. Suppression of higher harmonic generations of SAW in LiNbO3
JPS60236511A (en) Production of inter-digital transducer
JPS57147312A (en) Formation of sound absorbing film of surface acoustic wave filter