JPS5830216A - Acoustic wave device - Google Patents

Acoustic wave device

Info

Publication number
JPS5830216A
JPS5830216A JP12780181A JP12780181A JPS5830216A JP S5830216 A JPS5830216 A JP S5830216A JP 12780181 A JP12780181 A JP 12780181A JP 12780181 A JP12780181 A JP 12780181A JP S5830216 A JPS5830216 A JP S5830216A
Authority
JP
Japan
Prior art keywords
acoustic wave
propagation path
elastic wave
lambda
end part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12780181A
Other languages
Japanese (ja)
Inventor
Masaharu Ishigaki
正治 石垣
Jun Yamada
純 山田
Seiji Kishimoto
清治 岸本
Hitoshi Yanagihara
仁 柳原
Takeshi Hazama
間 剛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12780181A priority Critical patent/JPS5830216A/en
Publication of JPS5830216A publication Critical patent/JPS5830216A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02842Means for compensation or elimination of undesirable effects of reflections
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02614Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H03H9/02622Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the surface, including back surface

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To remarkably suppress an end face reflection signal of an acoustic wave, by shifting a position of a propagation path end part, by >=1 stage by width of lambda/4XN(N=1,3,5-, and lambda denotes the wavelength of the acoustic wave), and also setting the overall length of the propagation path end part to half of the whole. CONSTITUTION:An electric signal is converted to an acoustic wave by the first reedlike electrode 2 or 3, and the surface acoustic wave is converted to the electric signal again by the second bamboo blind-like electrode 3 or 2. A position of a propagation path end part of the acoustic wave is formed by shifting at least 1 stage by width of lambda/4XN (N=1,3,5-, and lambda denotes the wavelength of the acoustic wave), and the overall length of the propagation path end part which has been shifted and formed is set to 1/2 of the whole. When each half of the propagation path end part for reflecting the acoustic wave is shifted by lambda/4X N from each other, reflected waves from the respective end parts negate each phase, no reflection signal appears in the second reedlike electrode, and a satisfactory frequency characteristic of only a main signal can be obtained.

Description

【発明の詳細な説明】 本発明は弾性波装置に関するものであシ、更に詳しくは
基板端面からの反射を抑圧し1、周波数*aの嵐好な弾
性波装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an elastic wave device, and more particularly, to an elastic wave device that suppresses reflection from the end face of a substrate and has a frequency of *a.

弾性波装置としては、弾性境界波装置と弾性表面波装置
があシ、前者は鮪1図(α) (b) K示す様に、圧
電性基板1上にすだれ状電極2.5を設け、j!にその
上に圧電性基板1と弾性定数もしくは密度の異なる薄l
[4t−形成したものである。そして、この構造によっ
て圧電性基板2と薄l[4との境界1ii5にほとんど
全てのエネルギを集中させることにょ)、圧電性を有す
るストンリー波に類似する波を発生させ、これをフィル
タや遅延線等の各種電子デバイスに応用したものである
There are two types of elastic wave devices: boundary acoustic wave devices and surface acoustic wave devices.The former has interdigital electrodes 2.5 provided on the piezoelectric substrate 1, as shown in Figure 1 (α) (b) K. j! On top of that, there is a piezoelectric substrate 1 and a thin film having different elastic constants or densities.
[4t-formed. With this structure, almost all of the energy is concentrated on the boundary 1ii5 between the piezoelectric substrate 2 and the thin layer 1[4], generating waves similar to piezoelectric Stoneley waves, which can be transmitted through filters and delay lines. It is applied to various electronic devices such as.

しかし、この様な弾性境界波装置では、第2図に示す様
に入力用すだれ状電極2で励起され九弾性波が境界面5
に沿って矢印A、Bで示す様に左右両方向に伝搬し、そ
の一部は主信号として出力用すだれ状電極3で受信され
る。しかし、その他にも圧電性基板1の端面、即ち境界
面5の端部6.7で反射された弾性波A’、B’も出力
用すだれ状電極3で受信される。この弾性波A’ 、 
B’に基づいて出力用すだれ状電極3で発生される電気
信号は、主信号よシも遅相し良信号となるため、周波数
特性上リップルとなって現われるという不都合が生じる
However, in such a boundary acoustic wave device, as shown in FIG.
The signal propagates in both left and right directions as shown by arrows A and B, and a portion of it is received by the output interdigital electrode 3 as a main signal. However, in addition to this, elastic waves A' and B' reflected at the end face of the piezoelectric substrate 1, that is, at the end 6.7 of the boundary surface 5, are also received by the output interdigital electrode 3. This elastic wave A',
The electrical signal generated by the output interdigital electrode 3 based on B' is delayed in phase with respect to the main signal and becomes a good signal, which causes the problem that it appears as a ripple in terms of frequency characteristics.

上記と類似の現象は弾性波表面装置でも生じる。そして
、この圧電性基板端面からの反射波を抑圧する手段とし
て、圧電性基板端面近傍の基板表回上に弾性表面波の吸
収材t−塗布する方法が一般に用いられている。
A phenomenon similar to that described above also occurs in acoustic wave surface devices. As a means for suppressing reflected waves from the end faces of the piezoelectric substrate, a method is generally used in which a surface acoustic wave absorbing material is coated on the surface of the substrate near the end faces of the piezoelectric substrate.

しかし、弾性境界波装置においては、前述のごとく、圧
電性基板1と薄膜4との境界面5にそのほとんど全ての
エネルギを集中させ、装置表面のエネルギは?1 ?’
!’零に等しいため、弾性表面波装置の場合と同様に、
圧電性基板端6.7の近傍の薄1[4の表面に弾性波吸
収材を塗布しても、目的とする弾性波の反射波の抑圧に
はほとんど寄与しない。従って、弾性境界波装置t−実
用化する上で、上記した基板端面からの反射弾性波を有
効に抑制することが大きな問題になってbる。また、弾
性表面波装置においても、反射波をよシ有効に抑制する
手段の開発が期待されていた。
However, in the boundary acoustic wave device, as mentioned above, almost all of the energy is concentrated on the interface 5 between the piezoelectric substrate 1 and the thin film 4, and the energy on the surface of the device is measured. 1? '
! ' Since it is equal to zero, as in the case of surface acoustic wave devices,
Even if an elastic wave absorbing material is applied to the surface of the thin layer 1[4 near the piezoelectric substrate end 6.7, it hardly contributes to suppressing the reflected wave of the elastic wave as the objective. Therefore, in putting the boundary acoustic wave device into practical use, effectively suppressing the reflected acoustic waves from the end face of the substrate becomes a major problem. Furthermore, in surface acoustic wave devices, there have been expectations for the development of means for more effectively suppressing reflected waves.

本発明は、かかる従来の弾性波装置の欠点に鑑みなされ
たもので、従来の不具合を改善し、良好な周波数特性を
有する弾性波装置を提供することt目的としている。
The present invention was devised in view of the drawbacks of the conventional elastic wave devices, and an object of the present invention is to improve the conventional problems and provide an elastic wave device having good frequency characteristics.

本発明の弾性波装置は、電気信号を弾性波に変換するI
slのすたれ状電極と、#弾性波を再び電気偵号に変侠
する第2のすだれ状電極と、該弾性波の伝搬路とを備え
てなシ、かつ伝搬路端部の位置が、λ74 X# (N
 = 1j、5・・・、λは弾性波の波長)の幅たけ少
くとも1段ずれて形成され、ずれて形成された伝搬路端
部の全長が全体のヲであることを特徴としている。
The elastic wave device of the present invention converts an electric signal into an elastic wave.
sl, a second interdigital electrode that converts the elastic wave into an electric signal again, and a propagation path for the elastic wave, and the position of the end of the propagation path is λ74. X# (N
= 1j, 5..., λ is the wavelength of the elastic wave).

弾性波を反射させる伝搬路端部が半分ずつ互いにλ/4
 x Nだけずれていると、各々の端部からの反射波が
位相的に互いに打消すようになり、出力用の謝2のすた
れ状電極には反射信号が現われず、主信号だけの良好な
周波数特性を得ることが可能になる。
The ends of the propagation path that reflect the elastic waves are λ/4 each other.
If they are shifted by xN, the reflected waves from each end will cancel each other in phase, and no reflected signal will appear on the sagging electrode of the output terminal 2, and only the main signal will be in good condition. It becomes possible to obtain frequency characteristics.

以下添付の図面に示す実施例によって、更に詳細に本発
明について説明する。
The present invention will be described in more detail below with reference to embodiments shown in the accompanying drawings.

第3図は本発明の実施例を示すもので、テレビジ璽ン受
儂機の中間周波数段に用いるフィルタを本発明の弾性境
界波装置で形成したものである。圧電性基板1としては
128°回転Y軸カットのオニプ酸リチウムを用い、弾
性境界波の伝搬方間はX軸とした。すだれ状電極2.3
としては、中心周波数57MHz 、電極対数15対、
電極幅8脚の二重電極と、電極交差幅と電極間隔を変化
させた重み付き電極とを用い、いずれの電極も05μ寓
のフルZニクム蒸着膜をフォトエツチングすることによ
シ圧電性基板1上に形成した。
FIG. 3 shows an embodiment of the present invention, in which a filter used in the intermediate frequency stage of a television receiver is formed using the boundary acoustic wave device of the present invention. As the piezoelectric substrate 1, lithium onipate with 128° rotation and Y-axis cut was used, and the propagation direction of the boundary acoustic waves was set to be along the X-axis. Interdigital electrode 2.3
The center frequency is 57 MHz, the number of electrode pairs is 15,
A piezoelectric substrate was fabricated by using double electrodes with an electrode width of 8 and weighted electrodes with varying electrode crossing widths and electrode spacing, and photoetching a full Z nicum vapor deposited film of 05 μm for each electrode. 1.

ま九、薄膜4としては、二酸化シリコンt−CVD法に
よp基板上に30μ簿形成し、フォトエツチングによシ
鮪3図に示すごとく、境界面端面8.9のそれぞれにつ
めて半分づつ端面位置がλ/4(λ=64μ菖)だけず
れる様に、境界面端面8’、 9’を加工した。
9. As for the thin film 4, a 30 μm film was formed on the p-substrate by silicon dioxide t-CVD method, and half of it was deposited on each of the interface end faces 8.9 as shown in Fig. The interface end faces 8' and 9' were machined so that the end face positions were shifted by λ/4 (λ=64μ).

第4図は、第3図に示す実施例の周波数特性を示す図で
ある。図示する様に1従来の弾性境界波装置で生じてい
たリップル10は、本発明によれば曲!111に示され
る様にほとんど抑制され、この時の反射信号レベルは主
信号に対して一35tLB以下になっ九〇 また、他の実施例として、境界面端部8,8’。
FIG. 4 is a diagram showing the frequency characteristics of the embodiment shown in FIG. 3. As shown in the figure, the ripple 10 that occurs in the conventional boundary acoustic wave device is eliminated by the ripple 10 according to the present invention! As shown in 111, the reflected signal level is almost suppressed to 135 tLB or less compared to the main signal.

9.9′のそれぞれの位置のずれtλμの奇数倍とした
シ、境界面端部8,9f5個以上の部分に分け、前記の
技術的思想に則って分割しても全く同様の効果が得られ
るもので弗る。
Exactly the same effect can be obtained even if the boundary surface edges 8 and 9f are divided into five or more parts according to the above technical idea, and the positional deviation of each part of 9.9' is made an odd multiple of tλμ. I will open with what I can get.

更に、第3図に示す実施例において、基板1と薄膜40
組合せとしては、少くとも一方の物質が圧電性を有すれ
ば、前記した弾性境界波を励起することができ、この場
合にも本発明は同様の端面反射抑制効果を有するもので
ある。
Furthermore, in the embodiment shown in FIG.
As for the combination, if at least one of the substances has piezoelectricity, the above-mentioned boundary acoustic wave can be excited, and in this case also, the present invention has a similar end face reflection suppressing effect.

尚、以上の実施例は弾性境界波装置に関するものであっ
たが、弾性境界波のかわルに弾性表面波を励受信する弾
性表面波装置においても、全く同様(応用でき、反射弾
性表面波を抑制することが可能になる。
Although the above embodiments were related to boundary acoustic wave devices, they can be applied in exactly the same manner (applicable to surface acoustic wave devices that receive and receive surface acoustic waves instead of boundary acoustic waves, and reflected surface acoustic waves can also be applied). It becomes possible to suppress it.

以上の説明から明らかな様に1本発明によれば、弾性波
の端面反射信号が著しく抑制され、良好な周波数特性を
有する弾性波装置t−提供することが可能となる。
As is clear from the above description, according to the present invention, it is possible to significantly suppress end face reflection signals of elastic waves and provide an elastic wave device having good frequency characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(α)は従来の弾性境界波装置を示す平面図、第
1図(A)は従来の弾性境界波装置を示す側面断面図、
##2図は従来の弾性境界波装置の弾性境界波の端面反
射の状at−示す説明図、第3図は本発明の一実施例を
示す平面図、絡4図はW、3図に示した実施例の周波数
特性を示す図である。 1・・・圧電性基板   2.3・・・すだれ状電極4
・・・薄膜      5・・・境界面6、7.8.8
’ 、 9.9’・・・境界面端部代理人弁埠士 薄 
1)利 幸 第  1  冴q  (6L) 第2図 第5 図 第40 ”    54−   56    #6θ   bz
」波本バFIHz)
FIG. 1(α) is a plan view showing a conventional boundary acoustic wave device, FIG. 1(A) is a side sectional view showing a conventional boundary acoustic wave device,
##2 Figure 2 is an explanatory diagram showing the state of end face reflection of boundary acoustic waves in a conventional boundary acoustic wave device, Figure 3 is a plan view showing an embodiment of the present invention, Figure 4 is W, Figure 3 is It is a figure which shows the frequency characteristic of the example shown. 1... Piezoelectric substrate 2.3... Interdigital electrode 4
...Thin film 5...Boundary surface 6, 7.8.8
' , 9.9'...Boundary surface edge agent Benbushi Usui
1) Toshiyukidai 1 Saeq (6L) Figure 2 Figure 5 Figure 40 ” 54-56 #6θ bz
”Namimotoba FIHz)

Claims (1)

【特許請求の範囲】 (1)  電気信号を弾性波に変換する第1のすだれ状
電極と、該弾性波管再び電気信号に変換する第2のすだ
れ状電極と、該弾性波が伝搬する伝搬路とを備えてな〕
、かつ該弾性波の伝搬路端部の位置が、λ74 X N
 (N== 1.5.5・・・。 λは弾性波の波長)の輻だけ少くとも一段ずれて形成さ
れ、ずれて形成されている伝搬路端部の全長が全体のi
でめることを特徴とする弾性波装置。 (2) 上記弾性波が、弾性境界波であることt−特徴
とする特許請求の範囲第(1)項記載の弾性波装置。 (6) 上記弾性波が弾性表面波であることt−%黴と
する特許請求の範囲111E (11項記載の弾性波装
置。
[Scope of Claims] (1) A first interdigital electrode that converts an electric signal into an elastic wave, a second interdigital electrode that converts the acoustic wave tube back into an electric signal, and a propagation system in which the elastic wave propagates. Be prepared with a road.
, and the position of the end of the propagation path of the elastic wave is λ74
(N== 1.5.5..., where λ is the wavelength of the elastic wave), and the total length of the shifted propagation path end is the entire i
An elastic wave device that is characterized by the ability to (2) The elastic wave device according to claim (1), wherein the elastic wave is a boundary acoustic wave. (6) Claim 111E, wherein the elastic wave is a surface acoustic wave.
JP12780181A 1981-08-17 1981-08-17 Acoustic wave device Pending JPS5830216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12780181A JPS5830216A (en) 1981-08-17 1981-08-17 Acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12780181A JPS5830216A (en) 1981-08-17 1981-08-17 Acoustic wave device

Publications (1)

Publication Number Publication Date
JPS5830216A true JPS5830216A (en) 1983-02-22

Family

ID=14969008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12780181A Pending JPS5830216A (en) 1981-08-17 1981-08-17 Acoustic wave device

Country Status (1)

Country Link
JP (1) JPS5830216A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005036743A1 (en) * 2003-10-10 2005-04-21 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
WO2005036744A1 (en) * 2003-10-10 2005-04-21 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
US7737603B2 (en) 2003-12-16 2010-06-15 Murata Manufacturiing Co., Ltd. Boundary acoustic wave device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005036743A1 (en) * 2003-10-10 2005-04-21 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
WO2005036744A1 (en) * 2003-10-10 2005-04-21 Murata Manufacturing Co., Ltd. Boundary acoustic wave device
US7737603B2 (en) 2003-12-16 2010-06-15 Murata Manufacturiing Co., Ltd. Boundary acoustic wave device

Similar Documents

Publication Publication Date Title
KR102554129B1 (en) elastic wave devices
US5274345A (en) Dual function reflector structures for interdigital saw transducer
JPS60140917A (en) Surface acoustic wave transducer
KR20020010511A (en) Surface acoustic wave device
JP6178972B2 (en) Electroacoustic filter with low-pass characteristics
JP2005012736A (en) Surface acoustic wave converter and electronic device using same
JPH031846B2 (en)
JPS63215108A (en) Surface elastic wave device
JPS5830216A (en) Acoustic wave device
JPS5830217A (en) Acoustic wave device
US4205285A (en) Acoustic surface wave device
KR20030011366A (en) Surface acoustic wave device
JPH026670Y2 (en)
US5977846A (en) Unidirectional surface acoustic wave filter
JP2685537B2 (en) Surface acoustic wave device, manufacturing method thereof, adjusting method thereof, and communication device using the same
JP3106924B2 (en) Surface wave resonator
JPS61502930A (en) Improved surface acoustic wave filter
JPH03204212A (en) Internal reflection type unidirectional surface acoustic wave converter having floating electrode and filter
JPS59213A (en) Surface acoustic wave device
JPH0370933B2 (en)
US5808524A (en) Surface wave filter with a specified transducer impulse train that reduces diffraction
JP3035085B2 (en) Unidirectional surface acoustic wave converter
JP3201088B2 (en) Surface acoustic wave resonator
JPH0320929B2 (en)
JPH0241925B2 (en)