JP3201088B2 - Surface acoustic wave resonator - Google Patents

Surface acoustic wave resonator

Info

Publication number
JP3201088B2
JP3201088B2 JP20594093A JP20594093A JP3201088B2 JP 3201088 B2 JP3201088 B2 JP 3201088B2 JP 20594093 A JP20594093 A JP 20594093A JP 20594093 A JP20594093 A JP 20594093A JP 3201088 B2 JP3201088 B2 JP 3201088B2
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
waveguide
electrode
wave resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP20594093A
Other languages
Japanese (ja)
Other versions
JPH0758582A (en
Inventor
信成 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Original Assignee
Meidensha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp filed Critical Meidensha Corp
Priority to JP20594093A priority Critical patent/JP3201088B2/en
Publication of JPH0758582A publication Critical patent/JPH0758582A/en
Application granted granted Critical
Publication of JP3201088B2 publication Critical patent/JP3201088B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、弾性表面波を利用して
共振器又は多重モードフィルタを構成するための弾性表
面波(SAW)共振子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave (SAW) resonator for forming a resonator or a multimode filter using a surface acoustic wave.

【0002】[0002]

【従来の技術】SAW共振子は、例えば、図2に示すよ
うに、水晶等の圧電基板1面に一対の短冊形電極膜で構
成されるインター・ディジタル・トランスジューサ(I
DT)電極2と、このIDT電極2の両側に夫々短冊形
電極膜で構成される反射器3、4を配置して共振器を構
成する。
2. Description of the Related Art As shown in FIG. 2, for example, a SAW resonator is an interdigital transducer (I-digital transducer) composed of a pair of strip-shaped electrode films on one surface of a piezoelectric substrate such as quartz.
A DT) electrode 2 and reflectors 3 and 4 each formed of a strip-shaped electrode film on both sides of the IDT electrode 2 constitute a resonator.

【0003】また、該共振器が励起する弾性表面波の伝
搬方向(インター・ディジタル・トランスジューサ電極
と反射器の配列方向)に垂直に分布する横モードといわ
れる振動モードを利用し、多重モードフイルタと呼ばれ
るSAWフイルタとしても利用される。
Further, a multi-mode filter uses a vibration mode called a transverse mode distributed perpendicularly to a propagation direction of a surface acoustic wave excited by the resonator (an arrangement direction of an interdigital transducer electrode and a reflector). It is also used as a so-called SAW filter.

【0004】[0004]

【発明が解決しようとする課題】SAW共振子では、図
2に示すように、横モードでのエネルギー密度には基本
モードM1のほかに、二次モードM2及び三次モードM
3などの高次モードも存在し、これら高次モードのエネ
ルギー密度の存在はフイルタ特性上で不要な通過帯を形
成することがある。また、SAW共振子単体として用い
る場合もその特性を悪化させることがある。
As shown in FIG. 2, in the SAW resonator, the energy density in the transverse mode is not only the fundamental mode M1, but also the secondary mode M2 and the tertiary mode M.
There are also higher-order modes such as 3, and the existence of the energy density of these higher-order modes may form an unnecessary pass band on filter characteristics. Also, when used as a single SAW resonator, its characteristics may be deteriorated.

【0005】本発明の目的は、横モードでの弾性表面波
のうち高次モードの発生を抑制する弾性表面波共振子を
提供することにある。
An object of the present invention is to provide a surface acoustic wave resonator that suppresses the generation of higher-order modes among surface acoustic waves in a transverse mode.

【0006】[0006]

【課題を解決するための手段】本発明は、前記課題の解
決を図るため、圧電基板と、この圧電基板の面に一対の
短冊形電極膜で構成されるインター・ディジタル・トラ
ンスジューサ電極と、このインター・ディジタル・トラ
ンスジューサ電極の両側に設けられ短冊形電極膜で構成
される一対の反射器を備えた弾性表面波共振子におい
て、前記インター・ディジタル・トランスジューサ電極
と反射器の配列方向でかつ該電極の交差幅以下の幅で該
電極及び反射器の上面又は下面に圧電薄膜又は絶縁膜に
した導波路を備えたことを特徴とする。
In order to solve the above-mentioned problems, the present invention provides a piezoelectric substrate, an inter-digital transducer electrode formed of a pair of strip-shaped electrode films on the surface of the piezoelectric substrate, and In a surface acoustic wave resonator provided with a pair of reflectors provided on both sides of an inter-digital transducer electrode and formed of a strip-shaped electrode film, the inter-digital transducer electrode and the reflector are arranged in the direction of the arrangement. And a waveguide formed of a piezoelectric thin film or an insulating film on the upper surface or the lower surface of the electrode and the reflector with a width equal to or less than the intersection width of.

【0007】[0007]

【作用】圧電基板上で、導波路を設けた部分は、導波路
の膜厚部分だけ他の部位より基板が厚くなる。この質量
効果を利用して弾性表面波の伝搬を導波路部位に集中し
易くし、弾性表面波の横モードでのエネルギー密度分布
が基本モードで高くなると共に高次モードで低くなるよ
うにし、高次モードの発生を抑制する。
The portion where the waveguide is provided on the piezoelectric substrate is thicker than the other portions by the thickness of the waveguide. Utilizing this mass effect, the propagation of the surface acoustic wave is easily concentrated on the waveguide portion, and the energy density distribution in the transverse mode of the surface acoustic wave is increased in the fundamental mode and is decreased in the higher-order mode. Suppress the occurrence of the next mode.

【0008】[0008]

【実施例】図1は、本発明の一実施例を示すSAW共振
子の構成図である。同図が図2の構成と異なる部分は、
表面波伝搬路上に弾性表面波の導波路5を構成した点に
ある。
FIG. 1 is a configuration diagram of a SAW resonator showing one embodiment of the present invention. 2 is different from the configuration of FIG.
The point is that the surface acoustic wave waveguide 5 is formed on the surface acoustic wave propagation path.

【0009】この構造のSAW共振子は、圧電基板1上
に通常の手法でIDT電極2及び反射器3、4を形成し
た上から、蒸着法などによって圧電薄膜又は絶縁膜とし
て導波路5が形成される。
In the SAW resonator having this structure, an IDT electrode 2 and reflectors 3 and 4 are formed on a piezoelectric substrate 1 by an ordinary method, and a waveguide 5 is formed as a piezoelectric thin film or an insulating film by a vapor deposition method or the like. Is done.

【0010】逆に、蒸着法などによって圧電基板1上に
導波路5を形成した後、IDT電極2及び反射器3、4
を形成しても良い。
Conversely, after forming the waveguide 5 on the piezoelectric substrate 1 by vapor deposition or the like, the IDT electrode 2 and the reflectors 3, 4
May be formed.

【0011】弾性表面波の伝搬方向と直交する方向にな
る導波路5の幅wは、一対の短冊形電極膜になるIDT
電極2の交差幅Wに等しい値またはそれよりも狭い値に
される。
The width w of the waveguide 5 in the direction perpendicular to the direction of propagation of the surface acoustic wave is equal to the width of the IDT that forms a pair of strip-shaped electrode films.
A value equal to or smaller than the intersection width W of the electrode 2 is set.

【0012】また、弾性表面波の伝搬方向になる導波路
5の長さは、IDT電極2と反射器3、4を含む範囲の
値にされる。また、導波路5の厚さは、例えば0.1〜
1マイクロメータにされる。
The length of the waveguide 5 in the propagation direction of the surface acoustic wave is set to a value including the IDT electrode 2 and the reflectors 3 and 4. The thickness of the waveguide 5 is, for example, 0.1 to 0.1.
It is set to 1 micrometer.

【0013】本実施例によれば、圧電基板1上で、導波
路5を設けた部分は、導波路の膜厚分だけ他の部位より
も基板が厚くなる。この質量の差により、表面弾性波は
導波路5部位に集中して伝搬し易くなり、エネルギー密
度分布も導波路5が形成される中央部が大きく、端部が
小さくなる。
According to this embodiment, the portion of the piezoelectric substrate 1 where the waveguide 5 is provided is thicker than other portions by the thickness of the waveguide. Due to this difference in mass, the surface acoustic wave is easily concentrated and propagated at the portion of the waveguide 5, and the energy density distribution is large at the center where the waveguide 5 is formed and small at the end.

【0014】これにより、横モードのうち基本モードが
主に分布し、高次モードの分布は抑制される。即ち、横
モードでの高次モードの発生は抑制され、殆どは基本モ
ードを発生できることになり、高次モードによる共振器
やフイルタの特性への悪影響を少なくすることができ
る。
As a result, the fundamental mode is mainly distributed among the transverse modes, and the distribution of higher-order modes is suppressed. In other words, the generation of higher-order modes in the transverse mode is suppressed, and almost all of the fundamental modes can be generated, so that the adverse effects of the higher-order modes on the characteristics of the resonator and the filter can be reduced.

【0015】以上までの実施例においては、導波路5は
同じ厚さとする場合を示したが、導波路5をその幅方向
で中央部を両側部より厚くした構造とすることで高次モ
ードの抑制効果を高めることができる。
In the above embodiments, the case where the waveguides 5 have the same thickness has been described. However, the waveguide 5 has a structure in which the center portion is thicker in the width direction than the both sides, so that the higher order mode can be obtained. The suppression effect can be increased.

【0016】[0016]

【発明の効果】以上のとおり、本発明によれば、圧電基
板面にIDT電極と一対の反射器を設けるほかに、電極
と反射器の配列方向でかつ該電極の交差幅以下の幅で該
電極及び反射器の上面又は下面に圧電薄膜又は絶縁膜に
した導波路を設けた構造とするため、弾性表面波の伝搬
が導波路部位に集中し易くなり、弾性表面波の横モード
でのエネルギー密度分布が基本モードで高くなると共に
高次モードで低くなり、高次モードの発生を抑制するこ
とができ、共振器やフイルタ特性への悪影響を少なくす
る効果がある。
As described above, according to the present invention, in addition to providing the IDT electrode and the pair of reflectors on the piezoelectric substrate surface, the IDT electrode and the pair of reflectors are arranged in the direction in which the electrodes and the reflectors are arranged and the width is equal to or smaller than the intersection width of the electrodes. Since the waveguide is made of a piezoelectric thin film or an insulating film on the upper or lower surface of the electrode and the reflector, propagation of the surface acoustic wave is easily concentrated on the waveguide portion, and the energy of the surface acoustic wave in the transverse mode is increased. The density distribution increases in the fundamental mode and decreases in the higher-order mode, so that the occurrence of the higher-order mode can be suppressed, which has the effect of reducing the adverse effect on the resonator and the filter characteristics.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示す弾性表面波共振子の平
面図。
FIG. 1 is a plan view of a surface acoustic wave resonator according to an embodiment of the present invention.

【図2】従来構造とその横モードのエネルギー密度分布
を示す図。
FIG. 2 is a diagram showing a conventional structure and its transverse mode energy density distribution.

【符号の説明】[Explanation of symbols]

1…圧電基板 2…IDT電極 3、4…反射器 5…導波路 REFERENCE SIGNS LIST 1 piezoelectric substrate 2 IDT electrode 3 4 reflector 5 waveguide

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 圧電基板と、この圧電基板の面に一対の
短冊形電極膜で構成されるインター・ディジタル・トラ
ンスジューサ電極と、このインター・ディジタル・トラ
ンスジューサ電極の両側に設けられ短冊形電極膜で構成
される一対の反射器を備えた弾性表面波共振子におい
て、 前記インター・ディジタル・トランスジューサ電極と反
射器の配列方向でかつ該電極の交差幅以下の幅で該電極
及び反射器の上面又は下面に圧電薄膜又は絶縁膜にした
導波路を備えたことを特徴とする弾性表面波共振子。
1. A piezoelectric substrate, an inter-digital transducer electrode composed of a pair of strip-shaped electrode films on the surface of the piezoelectric substrate, and strip-shaped electrode films provided on both sides of the inter-digital transducer electrode. In a surface acoustic wave resonator having a pair of reflectors, the upper and lower surfaces of the interdigital transducer electrode and the reflector are arranged in the direction in which the interdigital transducer electrode and the reflector are arranged and have a width equal to or less than the intersection width of the electrodes. A surface acoustic wave resonator comprising a waveguide formed of a piezoelectric thin film or an insulating film.
JP20594093A 1993-08-20 1993-08-20 Surface acoustic wave resonator Expired - Fee Related JP3201088B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20594093A JP3201088B2 (en) 1993-08-20 1993-08-20 Surface acoustic wave resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20594093A JP3201088B2 (en) 1993-08-20 1993-08-20 Surface acoustic wave resonator

Publications (2)

Publication Number Publication Date
JPH0758582A JPH0758582A (en) 1995-03-03
JP3201088B2 true JP3201088B2 (en) 2001-08-20

Family

ID=16515244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20594093A Expired - Fee Related JP3201088B2 (en) 1993-08-20 1993-08-20 Surface acoustic wave resonator

Country Status (1)

Country Link
JP (1) JP3201088B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012132238A1 (en) 2011-03-25 2012-10-04 Panasonic Corporation Acoustic wave device with reduced higher order transverse modes

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4569699B2 (en) * 2006-12-27 2010-10-27 パナソニック株式会社 Surface acoustic wave resonator, surface acoustic wave filter and antenna duplexer using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012132238A1 (en) 2011-03-25 2012-10-04 Panasonic Corporation Acoustic wave device with reduced higher order transverse modes

Also Published As

Publication number Publication date
JPH0758582A (en) 1995-03-03

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