JPS5890744A - Semiconductor device - Google Patents

Abstract

PURPOSE:To improve heat radiation and provide semiconductor elements as many as possible on a functional layer by providing metal layers between layers of the stacking structure of Si substrate and functional layers. CONSTITUTION:The Si substrates 1a-1d are provided with many semiconductor elements and layers 2a-2c having the function of semiconductor device are respectively stacked alternately with metal plates 3a-3c. Therefore, when the functional layers 2a-2c are operating, generated heat is radiated effectively through the metal layers 3a-3c, preventing deterioration of function and breakdown of device.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device having an axial layer structure, and particularly to heat dissipation thereof.

Figure 1 is a cross-sectional view showing a conventional stacked structure semiconductor device.
2a)~(Ha) are these silicon base standards (la)~(
(1) and (1) and (1) and (2), respectively, and are layers each having a function as a semiconductor device by itself.

In this holiday, silicon substrate (la) - (1d) and functional layer (
In a semiconductor device in which 2a) to (8c) are stacked, for example, a functional layer (Sl
A) is that heat is generated when the semiconductor elements inside the semiconductor device operate, and this heat is hardly released to the outside of the semiconductor device, and the heat is trapped inside the semiconductor device, causing damage to the device. The temperature of the material itself is the key.

In other words, the conventional laminated structure semiconductor device has a very poor heat dissipation effect and may deteriorate the function of the semiconductor device itself or even be damaged. The number of semiconductor elements manufactured in (2c) was naturally reduced, which halved the merit of the laminated structure as a semiconductor device.

This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and by providing a metal layer between each layer in the laminated structure of a silicon substrate and a functional layer, more efficient heat dissipation is achieved. , is a patent that is characterized by making it possible to create more semiconductor elements using functional layers.

An embodiment of the present invention will be explained below based on FIG. The functional layers (8a)' to (sb) are metal layers made of a metal with good thermal conductivity, and the silicon substrate (1a) and the functional layer (jla
1, between the silicon substrate (11)) and the functional layer C2b), and between the silicon substrate (lcl and the functional layer (2C)), the heat generated from the functional layer (2al to (2C)) is transferred to the semiconductor. It is released outside the device.

In such a jet-type semiconductor device with i11+'ffl, the functional layer ($lal ~ (gc)) is heated during operation, that is, when the semiconductor elements formed therein are operated, the heat generated is is released to the outside through the respective metal layers (JLA) to (3C) disposed under each of the functional layers (GA") to IGC, and this causes heat to be trapped in the semiconductor device itself. This is something that can be alleviated.

Therefore, the function of the semiconductor device is suppressed from being impaired by the generated heat, and the functional layers C2a)′□ to (8c
) The number of semiconductor elements that can be manufactured for each can also be increased.

In the above embodiment, the side edges of each of the metal layers (8a)' to (8c) are cut off at the edge of the device and the silicon substrate 11a
1~(ldl and functional layer (2al~(gcl) The O side edges are on the same surface, but these side edges may also be made to protrude to the outside. In this case, heat release can be further enhanced. Also, metal layers (3a) to (
8C) may be a combination of several types of different metals, and furthermore, the metal layers (8a) to ゛° (8♂) are provided at the bottom of the functional layers (2a1 to (8a)), but they may also be provided above. , both the upper and lower parts may be offset by KB.

Further, in the above embodiments, a case in which eight functional layers were provided was described, but it is also possible to have eight or more functional layers. - As described above, in a semiconductor device in which a silicon substrate and a functional layer are laminated, this invention provides a metal layer between the silicon substrate and the functional layer, so that the semiconductor element formed in the functional layer can be easily removed during operation. It has the following advantages: it can efficiently release the generated heat to the outside, it can prevent functional deterioration and damage of the semiconductor device due to heat, and it can make many semiconductor elements in the functional layer.

[Brief explanation of drawings]

Figure 1 is a cross-sectional view showing a conventional stacked semiconductor device;
The figure is a new view showing a 4ft layer type semiconductor device according to an embodiment of the present invention. -, (la) to (Ill) are silicon substrates, (2
a1~(2C)ke'+II functional layer, (8a 3~NIC)
is a metal layer. In each figure, the same reference numerals indicate the same or equivalent parts. Agent Shin Kuzuno −

Claims (1)

[Claims] In a laminated type semiconductor device, in which a silicon substrate and a plurality of functional axes are laminated, in which a large number of semiconductor elements are fabricated, and a functional axis that itself has one function as a semiconductor device is layered, heat of metal, etc. is placed between each layer in the laminated structure. A semiconductor device characterized by being provided with an emission layer.