JPS5882575A - 半導体基板の製法 - Google Patents

半導体基板の製法

Info

Publication number
JPS5882575A
JPS5882575A JP56180479A JP18047981A JPS5882575A JP S5882575 A JPS5882575 A JP S5882575A JP 56180479 A JP56180479 A JP 56180479A JP 18047981 A JP18047981 A JP 18047981A JP S5882575 A JPS5882575 A JP S5882575A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
semiconductor
layer
insulating
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56180479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6233741B2 (enrdf_load_stackoverflow
Inventor
Takao Yamamoto
山本　▼‖ひ▼男
Hideo Sugiura
杉浦　英雄
Zeio Kamimura
税男 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56180479A priority Critical patent/JPS5882575A/ja
Publication of JPS5882575A publication Critical patent/JPS5882575A/ja
Publication of JPS6233741B2 publication Critical patent/JPS6233741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56180479A 1981-11-11 1981-11-11 半導体基板の製法 Granted JPS5882575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56180479A JPS5882575A (ja) 1981-11-11 1981-11-11 半導体基板の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56180479A JPS5882575A (ja) 1981-11-11 1981-11-11 半導体基板の製法

Publications (2)

Publication Number Publication Date
JPS5882575A true JPS5882575A (ja) 1983-05-18
JPS6233741B2 JPS6233741B2 (enrdf_load_stackoverflow) 1987-07-22

Family

ID=16083935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56180479A Granted JPS5882575A (ja) 1981-11-11 1981-11-11 半導体基板の製法

Country Status (1)

Country Link
JP (1) JPS5882575A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994815A (ja) * 1982-11-22 1984-05-31 Fujitsu Ltd 半導体装置の製造方法
JP2004273888A (ja) * 2003-03-11 2004-09-30 Hitachi Cable Ltd 電界効果トランジスタ用エピタキシャルウェハ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994815A (ja) * 1982-11-22 1984-05-31 Fujitsu Ltd 半導体装置の製造方法
JP2004273888A (ja) * 2003-03-11 2004-09-30 Hitachi Cable Ltd 電界効果トランジスタ用エピタキシャルウェハ

Also Published As

Publication number Publication date
JPS6233741B2 (enrdf_load_stackoverflow) 1987-07-22

Similar Documents

Publication Publication Date Title
US4733283A (en) GaAs semiconductor device
JPS5882575A (ja) 半導体基板の製法
US5264379A (en) Method of making a hetero-junction bipolar transistor
US4895811A (en) Method of manufacturing semiconductor device
JP2000208753A (ja) 半導体装置とその製造方法
JP2551427B2 (ja) 半導体装置及びその製造方法
JP2787589B2 (ja) 半導体装置
JP2645993B2 (ja) 電界効果型半導体装置及びその製造方法
EP0460429A2 (en) Method of making heterojunction bipolar transistor
KR100261461B1 (ko) 비대칭 리쎄스 구조를 갖는 화합물반도체 소자의 제조 방법
JP2682032B2 (ja) 半導体装置の製造方法
JP2002141516A (ja) 化合物半導体装置
JP2514948B2 (ja) 半導体装置の製造方法
JPH05129342A (ja) 化合物半導体装置
JPH05198601A (ja) 電界効果トランジスタおよびその製造方法
JPH07106525A (ja) 電界効果トランジスタおよび化合物半導体集積回路
JPH0797634B2 (ja) 電界効果トランジスタとその製造方法
JPH0194673A (ja) 電界効果トランジスタの製造方法
JPH01107577A (ja) 電界効果トランジスタの製造方法
JP2003179080A (ja) 化合物半導体装置及びオーミック電極の形成方法
JPS63275184A (ja) 電界効果トランジスタの製造方法
JPH0216008B2 (enrdf_load_stackoverflow)
JPS63107066A (ja) ヘテロ接合型バイポ−ラトランジスタ
JPH0724259B2 (ja) 化合物半導体装置の製造方法
JPS62114275A (ja) 自己整合型電界効果トランジスタ及びその製造方法