JPS5880880A - 半導体素子 - Google Patents

半導体素子

Info

Publication number
JPS5880880A
JPS5880880A JP56179439A JP17943981A JPS5880880A JP S5880880 A JPS5880880 A JP S5880880A JP 56179439 A JP56179439 A JP 56179439A JP 17943981 A JP17943981 A JP 17943981A JP S5880880 A JPS5880880 A JP S5880880A
Authority
JP
Japan
Prior art keywords
ratio
semiconductor
ionization
chihiro
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56179439A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526357B2 (enExample
Inventor
Hiroyuki Sakaki
裕之 榊
Tomonori Tagami
知紀 田上
Hideaki Nojiri
英章 野尻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56179439A priority Critical patent/JPS5880880A/ja
Priority to US06/437,627 priority patent/US4553317A/en
Priority to DE19823241176 priority patent/DE3241176A1/de
Publication of JPS5880880A publication Critical patent/JPS5880880A/ja
Publication of JPH0526357B2 publication Critical patent/JPH0526357B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Light Receiving Elements (AREA)
JP56179439A 1981-11-09 1981-11-09 半導体素子 Granted JPS5880880A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56179439A JPS5880880A (ja) 1981-11-09 1981-11-09 半導体素子
US06/437,627 US4553317A (en) 1981-11-09 1982-10-29 Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors
DE19823241176 DE3241176A1 (de) 1981-11-09 1982-11-08 Verfahren zum erzielen eines stossionisationskoeffizienten-verhaeltnisses durch verbinden verschiedenartiger halbleiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56179439A JPS5880880A (ja) 1981-11-09 1981-11-09 半導体素子

Publications (2)

Publication Number Publication Date
JPS5880880A true JPS5880880A (ja) 1983-05-16
JPH0526357B2 JPH0526357B2 (enExample) 1993-04-15

Family

ID=16065879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56179439A Granted JPS5880880A (ja) 1981-11-09 1981-11-09 半導体素子

Country Status (1)

Country Link
JP (1) JPS5880880A (enExample)

Also Published As

Publication number Publication date
JPH0526357B2 (enExample) 1993-04-15

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