JPS5878469A - 垂直チヤンネル電界効果トランジスタ - Google Patents

垂直チヤンネル電界効果トランジスタ

Info

Publication number
JPS5878469A
JPS5878469A JP57182027A JP18202782A JPS5878469A JP S5878469 A JPS5878469 A JP S5878469A JP 57182027 A JP57182027 A JP 57182027A JP 18202782 A JP18202782 A JP 18202782A JP S5878469 A JPS5878469 A JP S5878469A
Authority
JP
Japan
Prior art keywords
transistor
grid
conductor means
control conductor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57182027A
Other languages
English (en)
Japanese (ja)
Inventor
ポ−ル・ロベ−ル・ジエ
クリスチヤン・リユメラ−ル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5878469A publication Critical patent/JPS5878469A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP57182027A 1981-10-16 1982-10-16 垂直チヤンネル電界効果トランジスタ Pending JPS5878469A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8119530 1981-10-16
FR8119530A FR2514949A1 (fr) 1981-10-16 1981-10-16 Transistor a effet de champ a canal vertical

Publications (1)

Publication Number Publication Date
JPS5878469A true JPS5878469A (ja) 1983-05-12

Family

ID=9263127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57182027A Pending JPS5878469A (ja) 1981-10-16 1982-10-16 垂直チヤンネル電界効果トランジスタ

Country Status (4)

Country Link
US (1) US4529997A (enExample)
EP (1) EP0077706B1 (enExample)
JP (1) JPS5878469A (enExample)
FR (1) FR2514949A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507845A (en) * 1983-09-12 1985-04-02 Trw Inc. Method of making field effect transistors with opposed source _and gate regions
JPS61121369A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 半導体装置
US4728626A (en) * 1985-11-18 1988-03-01 International Business Machines Corporation Method for making planar 3D heterepitaxial semiconductor structures with buried epitaxial silicides
US5016074A (en) * 1987-10-20 1991-05-14 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
DE4311388B4 (de) * 1993-04-07 2005-07-28 Forschungszentrum Jülich GmbH Schichtsystem mit elektrisch aktivierbarer Schicht

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
US3381189A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Mesa multi-channel field-effect triode
US3354362A (en) * 1965-03-23 1967-11-21 Hughes Aircraft Co Planar multi-channel field-effect tetrode
CH436492A (de) * 1965-10-21 1967-05-31 Bbc Brown Boveri & Cie Steuerbare Halbleitervorrichtung mit mehreren Schichten
FR2303383A1 (fr) * 1975-03-06 1976-10-01 Alsthom Cgee Transistor a effet de champ a plat
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method

Also Published As

Publication number Publication date
EP0077706A1 (fr) 1983-04-27
EP0077706B1 (fr) 1986-05-14
FR2514949A1 (fr) 1983-04-22
US4529997A (en) 1985-07-16
FR2514949B1 (enExample) 1983-12-02

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