JPS5878417A - 薄膜形成真空装置 - Google Patents

薄膜形成真空装置

Info

Publication number
JPS5878417A
JPS5878417A JP17636181A JP17636181A JPS5878417A JP S5878417 A JPS5878417 A JP S5878417A JP 17636181 A JP17636181 A JP 17636181A JP 17636181 A JP17636181 A JP 17636181A JP S5878417 A JPS5878417 A JP S5878417A
Authority
JP
Japan
Prior art keywords
substrate
thin film
substrate support
film forming
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17636181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6256652B2 (enrdf_load_stackoverflow
Inventor
Kazuo Nakamura
一雄 中村
Shinya Homan
信也 宝満
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP17636181A priority Critical patent/JPS5878417A/ja
Publication of JPS5878417A publication Critical patent/JPS5878417A/ja
Publication of JPS6256652B2 publication Critical patent/JPS6256652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP17636181A 1981-11-05 1981-11-05 薄膜形成真空装置 Granted JPS5878417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17636181A JPS5878417A (ja) 1981-11-05 1981-11-05 薄膜形成真空装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17636181A JPS5878417A (ja) 1981-11-05 1981-11-05 薄膜形成真空装置

Publications (2)

Publication Number Publication Date
JPS5878417A true JPS5878417A (ja) 1983-05-12
JPS6256652B2 JPS6256652B2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=16012263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17636181A Granted JPS5878417A (ja) 1981-11-05 1981-11-05 薄膜形成真空装置

Country Status (1)

Country Link
JP (1) JPS5878417A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165421A (ja) * 1984-09-07 1986-04-04 Matsushita Electric Ind Co Ltd プラズマ化学気相堆積装置
JPH036366A (ja) * 1989-06-02 1991-01-11 Nippon Steel Corp 反応蒸着装置用基板ホルダー固定台
JP2016125107A (ja) * 2015-01-06 2016-07-11 株式会社カネカ 薄膜形成装置及びそれを用いた薄膜の製造方法、並びに有機ｅｌ装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03105540U (enrdf_load_stackoverflow) * 1990-02-09 1991-10-31
JPH0592310U (ja) * 1992-05-19 1993-12-17 丸井産業株式会社 構築用スペーサー

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165421A (ja) * 1984-09-07 1986-04-04 Matsushita Electric Ind Co Ltd プラズマ化学気相堆積装置
JPH036366A (ja) * 1989-06-02 1991-01-11 Nippon Steel Corp 反応蒸着装置用基板ホルダー固定台
JP2016125107A (ja) * 2015-01-06 2016-07-11 株式会社カネカ 薄膜形成装置及びそれを用いた薄膜の製造方法、並びに有機ｅｌ装置の製造方法

Also Published As

Publication number Publication date
JPS6256652B2 (enrdf_load_stackoverflow) 1987-11-26

Similar Documents

Publication Publication Date Title
US5674786A (en) Method of heating and cooling large area glass substrates
US6108937A (en) Method of cooling wafers
US5914493A (en) Charged-particle-beam exposure apparatus and methods with substrate-temperature control
US6486444B1 (en) Load-lock with external staging area
US6357143B2 (en) Method and apparatus for heating and cooling substrates
US8354001B2 (en) Processing thin wafers
US6780251B2 (en) Substrate processing apparatus and method for fabricating semiconductor device
WO1999031714A1 (en) Single wafer load lock chamber for pre-processing and post-processing wafers in a vacuum processing system
US20070128890A1 (en) Stacked annealing system
EP0528795A1 (en) Apparatus for low temperature cvd of metals
JP2009021534A (ja) 気相成長装置及び気相成長方法
TW536741B (en) Substrate processing equipment and method and covering member for use therein
US6200432B1 (en) Method of handling a substrate after sputtering and sputtering apparatus
JPS5878417A (ja) 薄膜形成真空装置
US6704496B2 (en) High temperature drop-off of a substrate
US6957690B1 (en) Apparatus for thermal treatment of substrates
US7231141B2 (en) High temperature drop-off of a substrate
JPH0756864B2 (ja) エピタキシヤル気相成長装置
JPH11345771A (ja) 枚葉式真空処理方法及び装置
JP2003105546A (ja) 化学的気相成長装置及びそれを用いた化学的気相成長方法
JPS5893230A (ja) 超高真空処理装置
JPH0541350A (ja) 試料ホルダの温度制御方法
JPS58181866A (ja) インライン型スパツタ装置