JPS5878417A - Vacuum vessel for thin film formation - Google Patents

Abstract

PURPOSE:To establish sufficient thermal contact between a heating/cooling holder and substrate support in order to enhance thermal conduction characteristic and to precisely control a cooling and heating temperature of the substrate support by additionally providing a pressurizing means which holds both substrate holder and heating/cooling holder with a pressure larger than that generated by gravity in case of mounting said substrate holder to said heating/ cooling holder. CONSTITUTION:A substrate support 3 is placed on a carrier base 8a and is then carried to the specified location 8 within the evaporation chamber 5. Here, when the substrate holder is lowered to the location indicated by 11B of Fig. B, a spring 14B is maximumly compressed as will be understood from the figure. Thereafter, the heating/cooling substrate holder is returned to the position 11A from the position 11B. In this final condition, the spring 14A is elongated longer than 14B but is more compressed than the first spring 14. Therefore, the substrate support 10A is compressed to the heating/cooling substrate holder with a force 50-100 times larger as a compared with a force of contact system by self- weight.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vacuum apparatus for forming thin films such as vacuum evaporation, star sintering, dry etching, and plasma CVD.

It has two or more true character chambers, a substrate insertion chamber and a thin film forming chamber, and a substrate support on which a plurality of substrates to be processed, such as wafers, are set, is placed on a transport mechanism, and the transport mechanism moves into the thin film forming chamber. In so-called in-line thin film forming vacuum equipment, which forms thin films while moving or stopping, the wafer set on the substrate support can be indirectly heated using lamps or heaters, but it is not possible to cool the wafer. It was extremely difficult to do so. If cooling is required5, the substrate support is transported by a transport mechanism and placed on a table in the thin film forming chamber that can be heated and cooled.A load-lock type thin film forming apparatus is used. was. However, even in this vacuum device, although the substrate support can be heated and cooled by heating the table and cooling with water, the thermal contact between the table and the substrate support is insufficient, so the temperature of the substrate support and the substrate cannot be adjusted to the desired temperature. It was impossible to control.

As described above, due to poor thermal contact between the table and the substrate support, for example, when using a resist-coated substrate for lift-off, and when producing a thin film consisting of extremely fine grain boundaries.

Although it was necessary to maintain the substrate temperature at a low temperature during IH manufacturing, it was difficult to do so with conventional equipment equipped with a substrate transport mechanism. On the other hand, it has sometimes become necessary to maintain the substrate temperature within a very precise range at a certain temperature, which is higher than room temperature, for heat treatment during or after film fabrication.
This was also difficult with conventional equipment.

It is an attempt to obtain quantity.

According to the present invention, a thin film forming chamber section including a substrate insertion chamber and one or more chambers having a heating and cooling substrate holder;
A load lock having isolation valve means provided between the thin film forming chamber and the substrate insertion chamber, and attachment/detachment means for attaching and detaching the substrate support on which the substrate to be processed is set from the substrate insertion chamber to the cooling holder. In this type of thin film forming apparatus, when the substrate support is attached to the heating and cooling holder, a film forming vacuum apparatus is obtained.

Next, the present invention will be explained in detail using the drawings.

Figure 1 is a schematic cross-sectional view outlining the configuration of a load-lock type vapor deposition apparatus which is an embodiment of the present invention. Finally, the movement of the substrate support will be explained. The substrate support 3 is placed on the substrate support up/down mechanism 2 in the substrate insertion chamber 1, and the main I ring 4 is evacuated. On the other hand, the vapor deposition chamber 5 is evacuated by the main Ponzoro, and then the isolation valve 7 is opened.

Then, the transport pedestal 8 in the vapor deposition chamber 5, which is a thin film forming chamber, is moved to a predetermined position 81 in the substrate insertion chamber (by a two-pinion automatic transport mechanism 9).

Note that 10 stands for the substrate support.

This point also does not exist.

Next, the substrate support vertical mechanism 2 is lowered to the lower position, and the substrate support 3 is placed on the transport pedestal 8a.

This is indicated by the dotted line 3'. Next, the transportation pedestal 8a
returns to the predetermined position 8 in the deposition chamber 5 again. At this time, the substrate support is at the position 10 described above. As will be explained in detail later, the heating and cooling substrate holder 11 is lowered to the substrate support 10, and the first
The substrate support 10 is attached using an attachment/detachment claw (not shown), and then it is raised again and returned to its original position. At this time isolation valve 7
When the evaporation source 12 of the substrate support is closed, preparation for evaporation is completed. All of the above operations are performed automatically.

Note that the substrate support 10' is located at the part 13 circled with a dotted line.
This figure shows that a spring 14 and a spring presser 15 are interposed between the pedestal 8 and the pedestal 8.

Note that the spring 14 is in its longest extended state.

FIG. 142 is a diagram showing the main parts of the apparatus according to the present invention shown in FIG. (
(') shows the part surrounded by the dotted line of ω) viewed from above. The same elements as in FIG. 1 are designated by the same reference numerals with A, B, and C added thereto. First, the combination of the substrate support, spring, and spring pusher mounted on the substrate support transfer pedestal 8 is IIB, 14B in CB),
Each is stopped at the fixed position shown in 15B. So (4
) The pawl 24 of the fastener 23 is rotated by the bearing 21 shown in FIG.
Place it in the position (orientation). In addition, this fastener 23.

Although the pawl 24 rotates, the entirety is fixed to the heating/cooling board nilder 11. Furthermore, 25A is a wafer which is a substrate to be processed.

At this point, lower the substrate holder to the position indicated by l1m (small). In this case, the pawl is at position 24a and is out of the descending path, so the heating and cooling board holder 11A
does not impede the descent of the And the heating and cooling board holder (B
), the spring 1
As can be seen from the figure, 4B is the most strongly compressed.

Next, move the pawl rotating arm 22 from the pawl 24m position to 24b.
Turn the heating/cooling board holder to position 113B and return it to position IIA (same as 11 in Figure 1). Therefore, assume that the pawl at position 24B has risen slightly, so move it to spring retainer 15B. (At this time, spring 14B is 1
4A), and thereafter the substrate holder 10B.
, and the final arrangement is as shown in ).

In the above final state, the length of the spring 14A is
Although more extended than 14B, spring 14 in the first Figure 1 is compressed. For this reason, the substrate support 10A
The conventional substrate support 10 is attached to the heating and cooling substrate holder 11A.
Comparing with the contact method using the weight of A itself, it is crimped with 5 o-j'xoo times the force. Therefore, for example, the heating and cooling substrate holder 11A is 70
℃, in the conventional method that does not use springs, the temperature of the substrate support 10A remains at room temperature 2 even after 1 hour after contact.
The temperature rose by only 2 to 3 degrees Celsius from 5 degrees Celsius and became almost equal to the temperature of the heater 11A. As shown in Figure 2, the shield cover 26
This is to prevent discharge from reaching areas other than the substrate holder when high voltage is applied to the heating/cooling substrate holder 11A). The power efficiency is high, and since there is little discharge in unnecessary areas, there are few impurities that come out from there, so there is little worry about contamination of the Weno-25A. In addition, if this wafer 25A is for lift-off use, where resist is applied, cooling water at about 10°C may be flowed through the substrate holder to prevent the rise in substrate temperature due to shear sputter etching, which is within the heat resistance limit of the resist. It was possible to maintain the temperature below a certain 80°C.

In the above explanation, the -1 plate holder temperature is approximately 10℃ and approximately 7℃.
Although the case where the temperature is maintained at 0° C. has been described, the present invention is not particularly limited to the method of setting the temperature of the substrate holder or the predetermined substrate temperature. For example, the present invention is also effective for maintaining the substrate temperature at the liquid nitrogen temperature by cooling using liquid nitrogen.

As described above, in the present invention, by using the conveyance and attachment/detachment mechanism of the substrate support, the cooling and heating temperatures of the substrate support can be precisely controlled in a load-lock type thin film forming vacuum apparatus. Lift-off vapor deposition, lift-off sputtering, dry etching, etc., in which wafer temperature control is important during formation, can be performed under desired conditions.
So you can get high quality products.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of the configuration of a load-lock type vapor deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the main parts of the apparatus according to the present invention shown in FIG. ■ is a diagram showing a cross section, 俤) is a diagram showing a cross section when installed,
t') is a top view of a part of (B). Explanation of symbols = 1 is the substrate insertion chamber, 2 is the substrate support vertical mechanism, 3 and 3' are the substrate support (before transportation), 4 is the main pump,
5 and 5A are the deposition chambers, and 6 is the main pump. 7 company isolation valves, 8.8a, 8B, 8C are transportation pedestals,
9 is rack and pinion type transport mechanism, 10° 10A, IOB
11 is a heating/cooling substrate holder, 12 is a deposition source, 14 is a spring, 15 is a spring presser, 22 is a claw rotation arm, 23 is a substrate support (after transportation), hereinafter A, B, and C are omitted. The fastener, 24 is the claw of the fastener, 24a and 24b are the two positions of the claw 24, 25 is the wafer, and 26 is the shield cover.

Claims (1)

[Claims] 1. A thin film forming chamber comprising a substrate insertion chamber and one or more chambers having a heating and cooling substrate holder. A load lock having isolation valve means provided between the thin film forming chamber and the substrate insertion chamber, and an attachment/detachment means for removing a substrate support on which a substrate to be processed is set from the substrate insertion chamber. In the thin film forming vacuum apparatus of the above-mentioned method, when the substrate support is attached to the heating/cooling holder, gravity is applied to the apparatus. 2. The thin film forming vacuum apparatus according to claim 1, wherein the pressurizing means is configured to apply the greater pressure to a compressed spring.