JPS5874072A - Electrooptical reader - Google Patents

Electrooptical reader

Info

Publication number
JPS5874072A
JPS5874072A JP56172323A JP17232381A JPS5874072A JP S5874072 A JPS5874072 A JP S5874072A JP 56172323 A JP56172323 A JP 56172323A JP 17232381 A JP17232381 A JP 17232381A JP S5874072 A JPS5874072 A JP S5874072A
Authority
JP
Japan
Prior art keywords
film
electrodes
irradiated
array
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56172323A
Other languages
Japanese (ja)
Inventor
Shuichi Sato
収一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP56172323A priority Critical patent/JPS5874072A/en
Publication of JPS5874072A publication Critical patent/JPS5874072A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To obtain a reader with extremely high reading resolving power, by arranging poly Si having photoelectric effect in an array and providing electrodes by pinching each film. CONSTITUTION:The poly Si film 3 in approx. 5,000Angstrom -3mum is evaporated on a ceramic substrate 1 so as to lie over the pairs of electrodes 2A, 2B, and both ends of the electrode are forced out of both sides of the film 3 and covered with transparent protection film according to necessity. The film 3 is divided into a many film sections 3A consisting of units of regions each between the electrode 2A and 2B, and, when some of the film sections 3 are irradiated, the resistance value of the film 3A section greatly decreases. When a voltage is kept impressed across the film 3A, a photocurrent flows between the electrodes 2A, 2B on both sides of the film. The photocurrent is read by moving the array of the film 3A in a direction at right angle with the array and scanning it on the surface to be irradiated. The film 3A is formed in approx. 12mum and the reading resolving power can be extremely enhanced. Besides, when a long converging lens is provided on the surface, and each film 3A is projected, the sensitivity can be improved.

Description

【発明の詳細な説明】 との発明は電気光学的読取装置VcIl−t″ふ。[Detailed description of the invention] The invention is an electro-optical reader VcIl-t''.

記録紙などのような面積の被照射面に表示されて偽る文
字1図形錦を電気光学的#C読取るのK。
K to electro-optically read #C of a character 1 graphic brocade displayed on a surface to be illuminated with an area such as a recording paper.

従来では個々に独立し舟光電素子を一直線に並べて1l
li!L介読取停置を使用+ふのを普通としている。こ
れによれば読取装置の読取面C被照射面からの資雀入射
中す面)を被照射面に向か込合わせて配置し、受光素子
の配列方向と19+る方向に沿って読取装置と被照射面
との一方又は一方を相対的に移動させ石。これによって
受光素子の配列方向を一列として被照射面を番数の列に
区分して頌次読散ふことがで真るよう#IC1にふ。
Conventionally, individual photoelectric elements were arranged in a straight line to form a 1L
li! I use L intermediary reading station + funo as normal. According to this, the reading surface C of the reading device (the surface where the mahjong is incident from the irradiated surface) is placed facing the irradiated surface, and the reading device and Stone by moving one side or the other side relative to the irradiated surface. As a result, #IC1 is set so that the light receiving elements can be arranged in one line and the irradiated surface can be divided into a number of columns and read out sequentially.

しかしどのよう1に読取装置によれば個々の光電素子の
多数を並設してIa成+ふので、光電素子の大★さKM
限されるため、読取分解能はどうして本制約されて小さ
くなってしまう欠点ゴあふ。
However, according to the reading device, how can a large number of individual photoelectric elements be arranged in parallel to form Ia+Funo, so that the size of the photoelectric element is KM?
Due to this limitation, the reading resolution becomes small due to this limitation.

この発明は被照射面を列伏に!!I!取ふにあ★す。This invention makes the irradiated surface face down! ! I! Torifunias★su.

その読取分解能の極めて高tx!取装電を提供すふこと
を目的と+石。
Extremely high tx reading resolution! The purpose is to provide electrical installation + stone.

この発明は例えば電相成長法等により形成されふポリシ
リコン膜を用LA、その光起電力効果を利用して電剣光
学的読取装置を構成することを特徴とする特にポリVリ
コンMbらなふ複数の1111mを徽細な間隔で少(と
龜ひとつの列に沿って設け。
This invention uses a polysilicon film formed by, for example, an electrophase growth method or the like to construct an electric sword optical reading device by utilizing the photovoltaic effect of the LA, and in particular, a poly-V recon Mb or the like. A number of 1111 m long sections were set up along one row at close intervals.

各膜部をはさんで電極を設置し介ことを特徴とすふ、薄
膜を会細な間隔で設FT、これに電wiiを設置すみ技
術は集積回路にお汁る★とえはシリコンウェハ面の桑膜
の触成技術或いは号−マVプリンタヘプV等<お#fる
抵抗膜の形成並びに電極の形成の各技術にお−て既に実
用化されて%A為、したゴって%仁の発明によるボ13
 pリコン腓の区−の淋成、電極の形成はこれらの技術
によって容易に達成で111ふ。
The FT is characterized by installing electrodes across each membrane part, and the thin film is installed at regular intervals, and the electric Wii is installed on this.The technology is based on integrated circuits.The technology is based on silicon wafers. The tactile technology for mulberry film on the surface or the technology for forming resistive films and electrodes has already been put into practical use, such as printers, printers, etc. Bo13 invented by Jin
The formation of electrodes in the prismatic region can be easily achieved by these techniques.

ポリFlコンlIIはアルミナその他のセラミックる。PolyFilcon II is made of alumina or other ceramics.

この種ポリシリコン膜は例えばxnnoLUXの照射光
下で流れふ光電?JE&非照射鰺Kflれる暗電流との
比はl♂〜1c; sJtと擾り、この大1&電流比t
P僧号として利用+ふ、又信号応答時間CR15e  
tj−me/Fall 1me )  ti命とえばZ
oo 4m X 1004m  の大貴さで500n秒
稈廖雀期待で★ふ。なおポリシリコン膜内に酸素原子あ
ふbけφツ素原子等を拡散させふと、暗電流を低く−1
ふとと雀で★ふので、m記lた電渣比を四に大★〈+る
ことが可能となふ。なお必要により受光面に、長尺のt
!光レンズを重ねふと、検出感膚は−に向上させふこと
本容易に可能となふ。
Does this kind of polysilicon film flow under the irradiation light of xnnoLUX? The ratio of JE & non-irradiated mackerel Kfl to the dark current is l♂ ~ 1c; sJt and this large 1 & current ratio t
Used as P monk + Fu, also signal response time CR15e
tj-me/Fall 1me) ti life is Z
oo 4m x 1004m, so I'm looking forward to a 500n second culm ★fu. Note that by diffusing oxygen atoms, etc. into the polysilicon film, the dark current can be lowered by -1.
It is possible to increase the electric current ratio by four times by suddenly and sparrow. If necessary, a long t
! By layering the optical lens, the detection sensation on the skin can be significantly improved.

ひとつの列に並ぶボダシ9コン膜の膜部の&ff1關当
介り13個程廖とすふと、!l−雀可能であみ。
There are about 13 pieces of &ff1 interlayer in the membrane part of the 9 membranes lined up in one row! l-Ami is able to play.

し介索って従来のように重油の受光素子を並べてIll
成しt本のに比較中れば、ひとつの受光素子の受光面重
数mm稈廖であふところからして格段と読取分解能雀高
か(なふことけ明白であふ。
The light receiving elements of heavy oil are lined up as in the past.
If you compare it to a book, it is clear that the reading resolution is much higher than that of a single light-receiving element with a light-receiving surface density of mm.

この発明の実施例を図によって説明すふ、lはセツミッ
クその他による絶縁性の基板、 mA、213は互L/
−hに対S−なす電1極で1図のように複数対から、1
′■ なめ、この電極けtfh−t”れ本蒸菅その他により薄
膜に形成されふ。3はポリシリコン膜で、基[1の表面
に、冬W極2A、2B間に重命幣ふように蒸着その他に
より構成され石、この場合、真剣wi2^。
An embodiment of the present invention will be explained with reference to the drawings, where l is an insulating substrate made by Setsmic et al., mA, and 213 is a mutual L/
-H to pair S- with one electrode, one from multiple pairs as shown in the figure, one
'■ Namely, this electrode is formed into a thin film using a steaming tube or other means. 3 is a polysilicon film, and on the surface of the base 1, there is a layer between the winter W poles 2A and 2B. The stone is composed of vapor deposited and other materials, in this case, seriously wi2^.

2Bの両端帽ポリVリコン113のWIjkからはみ出
ふよう#IC−リVリコン膜3を形成する。1にその表
rf7Jvcは必要によ幻透明の保護膜を銹設すす。
The #IC-recon film 3 is formed so as to protrude from the WIjk of the double-ended poly V recon 113 of 2B. 1. If necessary, a transparent protective film is installed on the surface of the rf7jvc.

上記の1lIFlttによれば、ボIs/1コン膜3は
互いIIcIIlり合う電極mA、2Bfil’lをひ
とつの領竣と干る4数の膜部3A KfK画されること
になふ、し★ゴつて−ずれ悔の膜部3AK光ゴ投射され
ふと、その膜部3^の抵抗値は前述のように大幅に低下
すふ。し★嚇ってその膜部間に電圧を印加しておけば、
その11部の両側に接していふ電@jan0mB間に充
電fiが漬れるように1にふ。との資電渣を適当に読取
ふととによ幻、被照射面上の文字0図影等を光学的に読
取ふとと雀できふように′&ふ、賽際KFi被照射面に
対し膜部3Aの列をその列と直交+ふ方向に相対的K1
1l動させ、被照射ifを順次走査させふことによって
被照射rf1を読取ることはいつマチ本な−、各@[3
An、1m1t1当りのaa。
According to the above 1lIFltt, the BOIs/1con membrane 3 is divided into 4 membrane parts 3AKfK, with the electrodes mA and 2Bfil'l intersecting with each other forming one area. As soon as the light is projected onto the film part 3AK of the film part 3AK, the resistance value of the film part 3^ decreases significantly as described above. If you threaten to apply a voltage between the membrane parts,
1 so that the charging fi is immersed between the electric current @jan0mB that touches both sides of the 11th part. Optically read the image of the power source and the shadow of the character 0 on the irradiated surface. Relative K1 of the row of part 3A in the direction perpendicular to that row
It is always possible to read the irradiated rf1 by moving the irradiated rf1 and sequentially scanning the irradiated if.
An, aa per 1m1t1.

6以14ffi81度と+石ことは現今の工Cl1i1
1技術から言って春Jb#IC実用化雀可能であ為、t
−★雀って読取分解能を極めて高かくすふこと帽でIl
lふ。
6 or more 14ffi 81 degrees and + stone is the current engineering Cl1i1
From a technology point of view, it is possible to put Jb#IC into practical use in the spring.
-★The sparrow has an extremely high reading resolution.
lfu.

&シ雛3図に示すように表面に樹脂、ガリス蝉よhaふ
長尺の集先レンズ4を配置し、被照射IIからの光を集
資1.て美@S<投射中るように中ふと。
As shown in Figure 3, a long focusing lens 4 made of resin is placed on the surface, and the light from the irradiated object II is focused 1. Tebi @S

WI&膚を向上させることがで★て都合雀よい。It is convenient to improve WI & skin.

第1図に示す実施例は電極2A、2iBけ冬膜部3Aの
列方向に沿って両側に縮瞳した111成であふ喫。
The embodiment shown in FIG. 1 has a 111 structure with miosis on both sides along the row direction of the electrodes 2A and 2iB and the winter membrane portion 3A.

雛4図、IES図#IC承中賽施例<ti、 電極mA
0mBを#w3^の列方向の両側へら引出して配置し奔
HI成をそれ千れX+。−に第p図、第〒図に示す実施
例は各膜部3Aの上下kwL極2A 、 2Bを配置し
舟I11成を示す。この場合上面の電極!Aは透光性で
あふこと−IIX必憂であふ。
Chick 4 diagram, IES diagram #IC implementation example <ti, electrode mA
Pull out 0mB from both sides of #w3^ in the column direction and place it, then add the HI configuration to X+. The embodiments shown in FIGS. 1-1 and 1-1 have upper and lower kwL poles 2A and 2B of each membrane portion 3A, and have a boat I11 configuration. In this case the top electrode! A is translucent and overflowing - IIX is overflowing with despair.

111E8図に鼻膜113Aの抵抗値!化を続出中ため
の一例の回路図を呆す。美膜郁3A#IC直列に負臂概
抗5を1σ列接続したIK列回路を電源端子6に対して
並列に接#I+ふ。そして桑膜部3Aと、負荷抵抗5と
の接続点けりツ牛回路ツに接続される。啼ツφ回#′y
KLAつせt八にリッチバVスヲ与えhと。
Figure 111E8 shows the resistance value of the nasal membrane 113A! I am amazed at the example circuit diagram that is being published one after another. Connect the IK series circuit in which the negative arm resistance 5 is connected in 1σ series to the 3A#IC series in parallel to the power supply terminal 6. The connection point between the mulberry film portion 3A and the load resistor 5 is connected to a switching circuit. Crying φ times#'y
I gave Rich Bar V Suwo to KLA.

前記接着点の電位はリッφ回g)に与えられ、ここに3
憶されふ。前記接続点の電位は、膜部3Aに流れ為電流
、し介ゴつてlll#sAに入射し介光の明ふ−gK比
例+ふ。リプ4−@#ヤに記憶され會信号はアナ昏グV
フトレジスJ8の各セクVHンに転送される。そのあと
啓上りV!ンに転送され★アナログ量はVフトパVスに
よって順次出力端子GfIhら出力として送り出されふ
、この出力は真鯛1[3AIIC入射され★光の明ふさ
に比例中ることはbう會でも1にい。なおこの発明の読
取装置は印字装置と組合わせ石ことによってファタvt
wをJII成す為こと膚で勇ふ。iの場合膜部3^の配
列密度と印字装置の印字ドツト密度とを等しくしてかく
とよい、ことに印字装置としてサーマに″f啼ンーヘッ
ドは、そのドツト密度を膜部3ムの配列密度とほぼ閾程
度に構成で食ふので、このと宵の印字装置としてサーマ
kf@y41ヘッド門好遥と・二□ 考え為。
The potential of the bonding point is given at φ times g), where 3
I remember it. The potential at the connection point causes a current to flow through the membrane portion 3A, which in turn enters Ill#sA and is proportional to the current of the current -gK+f. Reply 4-@#ya memorizes the meeting signal as an analog V
The data is transferred to each sector VH of the software register J8. After that, Keiage V! The analog quantity is sent out as an output from the output terminal GfIh sequentially by the V top pass, and this output is proportional to the brightness of the light, which is proportional to the brightness of the light. stomach. Furthermore, the reading device of this invention can be combined with a printing device so that
He is extremely brave in order to make W a JII. In the case of i, it is preferable to make the arrangement density of the membrane part 3^ equal to the printing dot density of the printing device.In particular, when the printing device is used as a thermal head, the dot density should be set equal to the arrangement density of the film part 3^. Since the configuration is almost at the threshold level, I am thinking of using Therma KF@Y41 head Yoshiharu Kado and 2□ as a printing device this evening.

以上詳述し命ようにこの発明によれば、従来のように受
光素子の複数を並べて@l!−t−x読取装置に比較す
ればその読取分解能を遥ふfl、に向上させ石こと雀で
負る効果を奏すふ。
As described in detail above, according to the present invention, a plurality of light receiving elements are arranged side by side as in the conventional case. -If compared to a t-x reader, its reading resolution can be improved to far more than 1,000 fl oz, and it can produce the same effect as a stone or a sparrow.

【図面の簡単な説明】[Brief explanation of drawings]

第1因はこの発明の実施例を示す平面図、填寓図は同断
面図、第3図は実施能様を示す正面図。 第415はこの発明の他の実施例を示す平面図、第5図
は同正面図、@6図はこの発明の11!に他の実施例を
示す平面図、第1図は断面図、填・図は読取用の回#図
であふ。 1−−−−−基11t、 lA、2B−−−−4w7A
、 3A、、、、−ボS1シ号フン腓の膜菖
The first factor is a plan view showing an embodiment of the invention, the filler drawing is a sectional view of the same, and FIG. 3 is a front view showing how it can be implemented. No. 415 is a plan view showing another embodiment of this invention, FIG. 5 is a front view of the same, and FIG. 6 is 11! of this invention! 1 is a plan view showing another embodiment, FIG. 1 is a sectional view, and the inset is a circuit diagram for reading. 1-----group 11t, lA, 2B----4w7A
, 3A, ,, - Bo S1 No. Fun's calyx

Claims (1)

【特許請求の範囲】 111先の照MKよって光起電力効果を生ずふポリシリ
コン膵からなふ膜部を基板の表面に微細な間隔をgいて
少イと本ひとつの列に沿って複数個設置し%前記膜部を
はさん〒その11ii11に電極を設置して井JIW電
資学的読取#瞳、       ・(2)電極は#部の
列に沿って#部の画側に設置しでたふ特許請求の範囲第
1項記載の電電光学的読取装置。 (3) W極は膜の列に対して直交中1方向に沿って膜
部の両側に設置してなり特許請求の範囲第lq/i記載
の電電光学的読取装置。 (4)電極はm部をdさんでその上下方向に沿って膜部
の11i@に設置し、かつ上面の電極を遊資性として′
&為特許請求の範囲第1項記載のt剣先学的読取装置。
[Claims] A plurality of membrane parts made of polysilicon pancreas, which produce a photovoltaic effect by the irradiation MK at the end of 111, are formed at minute intervals on the surface of the substrate, and a plurality of them are arranged along one row of the substrate. (2) Place the electrodes on the image side of the # section along the row of the # section. An electro-electro-optical reading device according to claim 1. (3) The electro-electro-optical reading device according to claim 1q/i, wherein the W poles are installed on both sides of the membrane part along one direction perpendicular to the membrane row. (4) The electrodes are installed at 11i@ of the membrane part along the vertical direction of the m part with d in between, and the electrode on the top surface is used as a floating electrode.
& Therefore, the t-point reading device according to claim 1.
JP56172323A 1981-10-28 1981-10-28 Electrooptical reader Pending JPS5874072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56172323A JPS5874072A (en) 1981-10-28 1981-10-28 Electrooptical reader

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56172323A JPS5874072A (en) 1981-10-28 1981-10-28 Electrooptical reader

Publications (1)

Publication Number Publication Date
JPS5874072A true JPS5874072A (en) 1983-05-04

Family

ID=15939775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56172323A Pending JPS5874072A (en) 1981-10-28 1981-10-28 Electrooptical reader

Country Status (1)

Country Link
JP (1) JPS5874072A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135464U (en) * 1984-07-31 1986-03-04 東北リコ−株式会社 line sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135464U (en) * 1984-07-31 1986-03-04 東北リコ−株式会社 line sensor

Similar Documents

Publication Publication Date Title
BR9205169A (en) PROCESS FOR MANUFACTURING A SOLAR CELL, PROCESS FOR STRUCTURING MATERIAL AND SOLAR CELL
US4426548A (en) Multilayer wiring structure
JPS54116890A (en) Photoelectric converter
JPS5874072A (en) Electrooptical reader
EP0119742B1 (en) Two-dimensional image readout device
KR870008225A (en) Metal layer attachment method using photosensitive cathode for adhesion of metal structure in organic polymer film
JPS6237812B2 (en)
US3517246A (en) Multi-layered staggered aperture target
JPS5575370A (en) Original reading device
KR880011626A (en) Electrostatic latent image forming apparatus
JPS61242068A (en) Image sensor
JP2563962Y2 (en) Solar radiation sensor
US4041521A (en) Shift array for pattern information processing device utilizing charge coupled semiconductor device
KR870700147A (en) Nonlinear and Bistable Optics
JPS59198770A (en) Photo receiving electronic device
US3778657A (en) Target having a mosaic made up of a plurality of p-n junction elements
JPS61214563A (en) Contact-type image sensor substrate
JPH0738437B2 (en) Image sensor
SU452285A1 (en) Spatially distributed photodetector with direct sampling of the word
JPS57109475A (en) Solid image pickup element
JPS5813078A (en) Picture reading element
JPS63222456A (en) Photodetector array
SU383067A1 (en) DEVICE FOR MODELING OF POTENTIAL
JPS5752276A (en) Solid image pickup element
JPS6462980A (en) Two-dimensional contact type image sensor