JPS5873120A - Electron-beam lithography device - Google Patents
Electron-beam lithography deviceInfo
- Publication number
- JPS5873120A JPS5873120A JP17147181A JP17147181A JPS5873120A JP S5873120 A JPS5873120 A JP S5873120A JP 17147181 A JP17147181 A JP 17147181A JP 17147181 A JP17147181 A JP 17147181A JP S5873120 A JPS5873120 A JP S5873120A
- Authority
- JP
- Japan
- Prior art keywords
- surface plate
- sampling chamber
- electron beam
- beam lithography
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は温度安定性を良好にし良電子ビーム描画装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam lithography apparatus that has good temperature stability and is highly efficient.
近年、半導体クエハやマスク基板等の試料に微細パター
ンを形成するものとして電子ビーム描画装置が開発され
ている。このf&置は試料車内に配置され九試料に隠子
ビーム光学−筒からの電子ビームを照射し、賦科上のレ
ジストを露光するものであプ、flL細バター7の形成
に極めて有効である。In recent years, electron beam lithography systems have been developed to form fine patterns on samples such as semiconductor wafers and mask substrates. This f & position is placed in the sample car and irradiates the sample with an electron beam from the electron beam optics tube to expose the resist on the sample, which is extremely effective for forming the flL thin butter 7. .
しかしながら講1図に示すような従来の装置において次
のような問屋があった。すなわち装置全体の温度は、室
内の諷度変−によって変化し、例えばステンレス鋼でさ
え一1’Oの温度変化に対して長さ30(Xで5.1p
mも変形してしまう(熱膨張係数17.I X 10
/’O)、このため温度変化による材料のR形によっ
てナプミクロンの寸法種度を再現性よく確保できないと
いう欠点があった。However, the following wholesalers exist for conventional equipment as shown in Figure 1. In other words, the temperature of the entire device changes depending on the temperature change in the room.
m is also deformed (thermal expansion coefficient 17.I x 10
/'O), therefore, there was a drawback that the dimensional degree of the napmicron could not be ensured with good reproducibility due to the R shape of the material due to temperature changes.
従来この解決方法として試料室1.予備室2゜−浦城付
は相フフンジ3等に恒温水を流し恒温化して外乱の温度
変化、駆動部4.@@5からの発熱に対して対処してき
た。しかし試料室と一定盤6は一定し、なければならな
く、かつ定盤の質量が大きい友め恒直化の丸めの熱容量
が非常に大舞いという欠点があった。このため熱時定数
が大きくなかなか一定の温度には設定できない事がおっ
た。Conventionally, the solution to this problem is to use sample chamber 1. In the preliminary chamber 2°-Urajo, constant-temperature water is poured into the phase fan 3, etc., to maintain a constant temperature, and the temperature change due to disturbance is controlled by the drive unit 4. We have been dealing with the fever from @@5. However, the sample chamber and the constant plate 6 must be fixed, and the mass of the plate is large, so the heat capacity of the constant rounding is very large. For this reason, the thermal time constant was large and it was sometimes difficult to set a constant temperature.
さらに定盤は表面積が大きく外部の熱影響を受はヤすい
状態にあり、問題であり九。このような問題は電子ビー
ム描画装置に限らず、イオンビーム描画装置においても
同様である。Furthermore, the surface plate has a large surface area and is easily affected by external heat, which is a problem. Such problems are not limited to electron beam lithography apparatuses, but also apply to ion beam lithography apparatuses.
本発明は上記事情に鑑みてなされたもので、その目的と
するところは試料室と定盤との閣の熱絶縁を図シ定盤か
らの熱入力を極力押えるとと−に試料室の熱容量を極力
小さくすることによって紙料ムの温度制御を行ないやす
くし良電子ビーム摘、画装置を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to improve the thermal insulation between the sample chamber and the surface plate, to suppress the heat input from the surface plate as much as possible, and to increase the heat capacity of the sample chamber. It is an object of the present invention to provide a high-quality electron beam extraction and imaging device in which the temperature of the paper stock can be easily controlled by making the temperature as small as possible.
まず、本発明の詳細な説明する。従来の恒−装置の容量
を変えることなく効果的に温度制御を行なうためには試
料室と定盤との熱絶縁を行なうことによってなしとげら
れる。これによって定盤と試料室は熱的に分離できる。First, the present invention will be explained in detail. Effective temperature control without changing the capacity of conventional constant-temperature equipment can be achieved by providing thermal insulation between the sample chamber and the surface plate. This allows the surface plate and the sample chamber to be thermally separated.
本発明はこの熱絶縁を簡単に行なづ方法を提供する。The present invention provides a simple way to accomplish this thermal insulation.
以下本発明を図面を参照して実施例によって説明する。The present invention will be explained below by way of examples with reference to the drawings.
第2図は本発明の一笑施例を示す装置断面図である。試
料illは定盤6との関に適当な金属で剃作した中間材
7を介して固定されている。FIG. 2 is a sectional view of a device showing a simple embodiment of the present invention. The sample ill is fixed to the surface plate 6 via an intermediate member 7 made of a suitable metal.
この金属内には恒温水が流せれる構造となっておりそれ
自身一定の温度に保九れる1ltj4第2図において、
2は予*ii、3は72ンジ、4は駆動部、5は鏡筒、
8はポンプである。上記中間材7は特に恒温水を流さな
くても例えばセフミックなどのような熱伝導率の非常に
悪い材料で製作することによっても目的(1″達成する
ことが出来ること力!わかった。This metal has a structure that allows constant temperature water to flow and maintains itself at a constant temperature.
2 is the pre-*ii, 3 is the 72 inch, 4 is the drive unit, 5 is the lens barrel,
8 is a pump. The intermediate material 7 can also be made of a material with very poor thermal conductivity, such as Cefmic, without flowing constant-temperature water, so that the objective (1") can be achieved! I understand.
向、本発明は上述し九実施例に限定されるものではない
。試料室の下に敷く材料の中に恒温水を流す方法はいか
ようにも考えられる。を九絶縁材を用いる場合でもセラ
ミック以外にも多数考えられる。要するに試料室と定盤
との間を熱絶縁するという本発明の要旨を逸脱しない範
四で種々変形して実施することかで自る。このような構
成とすることによって試料室の温度安定性が数段よくな
り、定盤からの熱変動が少なくなった。さらに恒a装置
の容1tt−少なくすることが0]′能となりコストン
クンにも役立つ九。ま九装置立上げ時試料電の熱容量し
かかからないため温度安定化までの時間が短縮されII
IIIJIが非常に短い時間でできる様ななるなど利点
が多かっ九。However, the present invention is not limited to the nine embodiments described above. There are many ways to run constant temperature water through the material placed under the sample chamber. 9. When using an insulating material, there are many possibilities other than ceramic. In short, various modifications may be made without departing from the gist of the present invention, which is to provide thermal insulation between the sample chamber and the surface plate. With this configuration, the temperature stability of the sample chamber was significantly improved, and thermal fluctuations from the surface plate were reduced. Furthermore, it is possible to reduce the capacity of the constant a device (1tt-), which is useful for cost-effectiveness. The time required for temperature stabilization is shortened because only the heat capacity of the sample voltage is required when starting up the Maku equipment.
There are many advantages such as IIIJI can be done in a very short time.
第1図は従来の装置の断面図、第2図は本発明の一実施
例の装置断面図である。
1・・・試料室、 2・・・予備憲。
3・・・7ランジ、 4・・・駆動部。
5・・・鏡 筒、 6・・・定 盤。
7・・・中間材、 8・・・ポンプ。
代理人 弁理士 則 近 憲 佑
ほか1名FIG. 1 is a cross-sectional view of a conventional device, and FIG. 2 is a cross-sectional view of a device according to an embodiment of the present invention. 1...Sample room, 2...Preliminary constitution. 3... 7 lunges, 4... Drive section. 5... Lens tube, 6... Surface plate. 7...Intermediate material, 8...Pump. Agent: Patent attorney Noriyuki Chika and 1 other person
Claims (3)
たれる試料室と、予備室と、装置駆動に必要な駆動源と
、これら構造物を載置する定盤とから構成される電子ビ
ーム描1jifi置において、上記試料室と上記定盤と
の間に熱め線用部材を用は要事を特徴とする電子ビーム
描画装置。(1) Consists of an electron beam optical column, a sample chamber where the sample is placed and kept empty, a preliminary chamber, a drive source necessary to drive the device, and a surface plate on which these structures are placed. An electron beam lithography apparatus characterized in that a hot wire member is used between the sample chamber and the surface plate in the electron beam lithography system.
す′る前記特許請求の範囲第1項記載の電子ビーム描画
装置。(2) The electron beam lithography apparatus according to claim 1, wherein the heat insulating member is made of ceramic.
する特#I!F−請求の@曲第り項および第2墳記載の
電子ビーム描画装置。(3) Special #I characterized by passing constant temperature water through the heat insulating member! The electron beam lithography apparatus described in the @curved section and the second column of F-claim.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17147181A JPS5873120A (en) | 1981-10-28 | 1981-10-28 | Electron-beam lithography device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17147181A JPS5873120A (en) | 1981-10-28 | 1981-10-28 | Electron-beam lithography device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5873120A true JPS5873120A (en) | 1983-05-02 |
Family
ID=15923715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17147181A Pending JPS5873120A (en) | 1981-10-28 | 1981-10-28 | Electron-beam lithography device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5873120A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54100668A (en) * | 1978-01-26 | 1979-08-08 | Toshiba Corp | Electron-beam exposure unit |
JPS5575148A (en) * | 1978-11-30 | 1980-06-06 | Matsushita Seiko Co Ltd | Multiple type air conditioner |
-
1981
- 1981-10-28 JP JP17147181A patent/JPS5873120A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54100668A (en) * | 1978-01-26 | 1979-08-08 | Toshiba Corp | Electron-beam exposure unit |
JPS5575148A (en) * | 1978-11-30 | 1980-06-06 | Matsushita Seiko Co Ltd | Multiple type air conditioner |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5231291A (en) | Wafer table and exposure apparatus with the same | |
US5738165A (en) | Substrate holding apparatus | |
EP0484179B1 (en) | Wafer holding device in an exposure apparatus | |
JPH0344913A (en) | Substrate holding device and aligner using the same | |
JPS6187124A (en) | Microlithography apparatus | |
US20020008858A1 (en) | Optical arrangement and projection exposure system for microlithography with passive thermal compensation | |
JPS5873120A (en) | Electron-beam lithography device | |
JPS634698B2 (en) | ||
US7326877B2 (en) | Laser thermal processing chuck with a thermal compensating heater module | |
US3171955A (en) | Temperature controlled and adjustable specimen stage for scientific instruments | |
JP3291832B2 (en) | Substrate holding member and exposure apparatus | |
JPS6151737A (en) | Electronic lens | |
JPS61269839A (en) | Electromagnetic lens and electronic microscope using the same | |
JP2003178960A (en) | Thermal treatment device for substrate | |
JPS61130480A (en) | Mask for vapor deposition | |
JPH0527413A (en) | Photomask for exposing device | |
JPH01258423A (en) | Device for manufacturing semiconductor device | |
JPS60171725A (en) | Charged beam exposure unit | |
JP2007178682A (en) | Electron beam lithography system | |
EP0469679B1 (en) | Charged particle beam system, a cooling member, a coil comprising such cooling member and a cooling device incorporating such cooling member | |
SU1580454A1 (en) | Electromagnetic lens | |
JPS60122951A (en) | Optical device | |
JPS58117501A (en) | Plane microlens | |
JPH0590131A (en) | X-ray aligner | |
JP2692225B2 (en) | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |