JPS5866371A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS5866371A JPS5866371A JP56164720A JP16472081A JPS5866371A JP S5866371 A JPS5866371 A JP S5866371A JP 56164720 A JP56164720 A JP 56164720A JP 16472081 A JP16472081 A JP 16472081A JP S5866371 A JPS5866371 A JP S5866371A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- stem
- resin layer
- lens
- forming resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は発光ダイオードの改良に関する。[Detailed description of the invention] The present invention relates to improvements in light emitting diodes.
従来、発光ダイオード（以下ＬＥＤという）は、次のよ
う欧構造の゛ものが知られている。即ち、２つの貫通穴
を有するセラミック製のステム本体と、前記貫通穴の一
方に一端がステム本体の上部から突出するよ□うに挿着
されたアノ−ドーリ・−ドと、前記貫通穴の他方に一端
Ｐスデム本体の上部から突出するように挿着され九カソ
ードリードと、前記カソードリードの上部に設けられ大
電極を有する発光素子と、この発光′素子の電極と前記
アノードｖ−ｐｔ−接続するがンディンダワイヤと、前
記ステ五本体に嵌着され、発光素子を気密に封止するレ
ンズ形成用樹脂層とを具備した構造になっている。 ・
しかしなから、かかる構造を有するＩＪＤにおいては、
レンズ形成用樹脂層と該樹−脂層に接触するステ五本体
との境界面（・の接着強［が小さいため、該樹脂層とス
テ五本体の境界部からの水分の侵入等でＬＩＤ （０％
性が著しく劣化するとともに、レンズ形成用樹脂層かス
テム本一体との境界部で剥れてしま□うという問題があ
った・本発明は上記事情に鑑みてなされたもので、レン
ズ形成用樹脂層と接触するステム本体の表面を粗面化す
ることによって、どンズ形成用樹脂層と該樹脂層に！Ｉ
触するステム本体との境界面での接着強度を向上し九発
光〆イオードを提供することを目的とするもの・である
。Conventionally, light emitting diodes (hereinafter referred to as LEDs) have been known to have the following European structure. That is, a stem body made of ceramic having two through holes, an anode lead inserted into one of the through holes so that one end protrudes from the top of the stem body, and the other of the through holes. a nine cathode lead which is inserted at one end so as to protrude from the upper part of the main body of the P Sdem, a light emitting element having a large electrode provided on the upper part of the cathode lead, and an electrode of this light emitting element and the anode V-PT- connection. However, it has a structure that includes an end wire and a lens-forming resin layer that is fitted into the main body of the step 5 and hermetically seals the light emitting element.・However, in an IJD with such a structure,
Since the adhesive strength of the interface between the lens-forming resin layer and the main body of the main body in contact with the resin layer is small, LID ( 0%
There was a problem that the properties of the resin for lens formation deteriorated significantly and that the resin layer for lens formation peeled off at the boundary between the resin layer and the stem body.The present invention was made in view of the above circumstances. By roughening the surface of the stem body that comes into contact with the layer, the resin layer for forming donuts and the resin layer! I
The purpose is to improve the adhesive strength at the interface with the stem body and provide a nine-light emitting diodes.
以下、本発明の１実施例を第１図及び第２図を参照して
説明する。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1 and 2.
図中１は、セラ々、タ製のステム本体であシ、この本体
１の中央部分及びその隣１１部分の厚み方向に夫々貫通
穴！ １ ＊ Ｊ ＠が設けられて−る。In the figure, 1 is a stem body made of ceramic, and there are through holes in the thickness direction of the central part of this body 1 and 11 parts adjacent to it. 1 * J @ is provided.
１また、仁のステム本体１の上面社、例えばゴ：Ｈ，Ｏ
−１：２のエツチング液によ）粗面化されている・更に
、前記ステム本体１の中央の貫通穴ＪＩＫ：紘カッーＰ
リード３が、他の貫通穴２ｓには７ノードリード４が夫
々一端をステム本体１の上面から突出し、他端ｔステム
本体１０下面から延出するように酸化物系ガラスＳを介
して挿着されて−る。前記カソードリードＳの上部に線
、導電性のエポキシペースト６を介して発光素子１が設
けられている。を九、この発光素子ｒは上面に電極８を
有し、該電極ａＦｉｚンディンダワイヤ９を介して前記
アノードリード４の上部に接続されている。前記ステ五
本体１には、前記発光素子１及びがンデ（ングワイヤ９
を気密に封止するレンズ形成用樹脂層１０が同着されて
いる。1 In addition, the upper surface of the stem body 1 of Jin, for example, GO: H, O
-The surface is roughened using a 1:2 etching solution.Furthermore, the through hole in the center of the stem body 1 is roughened.
The lead 3 is inserted into the other through hole 2s, and the 7-node lead 4 is inserted through the oxide glass S so that one end projects from the top surface of the stem body 1 and the other end extends from the bottom surface of the stem body 10. It's being done. A light emitting element 1 is provided above the cathode lead S via a wire and a conductive epoxy paste 6. (9) This light emitting element r has an electrode 8 on its upper surface, and is connected to the upper part of the anode lead 4 via an electrode wire 9. The light emitting element 1 and the connecting wire 9 are attached to the main body 1 of the step 5.
A lens-forming resin layer 10 for airtightly sealing the lens is adhered at the same time.
しかして、上記した６構造を有するＬＥＤは、レンズ形
成用樹脂層１０に接触するステム本体１の上面を粗面化
したため、レンズ形成用樹脂層１０とステム本体１との
境界面での密着性）；向上し、それらの接着強度を著し
く向上できる。Therefore, in the LED having the six structures described above, the upper surface of the stem body 1 that contacts the lens-forming resin layer 10 is roughened, so that the adhesion at the interface between the lens-forming resin layer 10 and the stem body 1 is improved. ); and their adhesive strength can be significantly improved.
その結果、レンズ形成用樹脂層１０とステム本体１との
境界部からの水分の侵入等を防止してＬＥＤ（０％性の
劣化を防止できるとともに、レンズ形成用樹脂層ｌＯの
ステム本体１からの剥れｔ防止できる。事実、従来のＩ
ＪＤと１０秒〜６０秒間ＩＦ： Ｈ２０■１：２の濃度
のエツチング液で上面を粗面化されたステム本体１を有
する本発明のＬＩＤにおいて、ｙンズ形成用樹脂層とス
テム本体との接着強度を試験したとζろ、本発明の１．
ＥＤにおける接着強度は従来のＬＩＤのそれと比較して
１．５〜１．８時太き、かった・１に訃、上ｌ実施例に
おいてステム本体の粗面化手段としては１二、クチン。As a result, it is possible to prevent moisture from entering from the boundary between the lens forming resin layer 10 and the stem body 1, thereby preventing deterioration of the LED (0%) property, and also preventing moisture from entering from the boundary between the lens forming resin layer 10 and the stem body 1. In fact, conventional I
JD and 10 seconds to 60 seconds IF: H20 When the strength was tested, 1. of the present invention was tested.
The adhesive strength in ED was 1.5 to 1.8 times thicker than that in conventional LID.
ダ液を用いて行なり九カ、これＫｉｌらず、サンドブラ
スト等の機械的処理をしてもよい、また、ステ五本体の
上面を粗面化する待期社、カソードリードヤアノードリ
ーｒをステム本体に挿着した後に行なってもよいし、ス
テム本体に貫通穴を設けて該ステム本体を仮焼成した後
行なってもよい・以上詳述した如く、本発明−よれば、
ステム本体とレンズ形成用樹脂層との境界面での密着性
が良好で接着強度を大、ｔｌ＜できるため、ステム本体
とレンズ形成・用樹脂層との境界部からの水分の侵入等
を防止し、特性の劣化と、レンズ形成用樹脂層のステ五
本体からの剥れのない良好な発光ダイオードを提供でき
るものである。It is possible to perform mechanical treatment such as sandblasting without removing the liquid, or use a mechanical treatment such as sandblasting. This may be carried out after the stem body is inserted into the main body, or it may be carried out after the stem body is provisionally fired by providing a through hole in the stem body.As detailed above, according to the present invention,
Good adhesion at the interface between the stem body and the lens-forming resin layer, resulting in high adhesive strength and tl<, preventing moisture from entering from the interface between the stem body and the lens-forming resin layer. However, it is possible to provide a good light emitting diode without deterioration of characteristics and peeling of the lens forming resin layer from the main body of the main body.
第１図は、本発明の１実施例を示すＬＩＣＤの断面図、
第２図は第１図のムーム線に沿う断面図である・
ｌ°°°ステム本体、：ｌ＠、２−”’貫通穴、３・・
・カソードリード、４・・・アノードリード、！・・・
発光素子、ト・・−ンデイング９イヤ、１０−・・レン
ズ形成用樹脂層。FIG. 1 is a sectional view of an LICD showing one embodiment of the present invention;
Figure 2 is a sectional view taken along the Moum line in Figure 1. l°°° Stem body: l@, 2-"' through hole, 3...
・Cathode lead, 4...Anode lead,! ...
Light emitting element, toning 9 years, 10... resin layer for lens formation.
Claims (1)
記貫通穴の一方に一端がステム本体の上面から突出する
ように挿着されたアノードリードと、前記貫通穴の他方
に一端がステ五本体の上面から突出す゛るように挿着さ
れたカソードリードと、前記カソードリードの上部に設
けられた電極を有する発光素子と、この発光素子の電極
と前記アノードリードを接続するがンディングワイヤと
、前記ステ五本体に嵌着され、発光素子を気密に封止す
るレンズ形成用樹脂層からなる発光ダイオードにおいて
、前記し７ズ形成用樹脂層と接触するステ五本体の表向
を粗面化したことを特徴とする発光ダイオード。A stem main body made of ceramic having two through holes, an anode lead inserted into one of the through holes so that one end protrudes from the upper surface of the stem main body, and one end of the stem main body in the other through hole. A light emitting element having a cathode lead inserted so as to protrude from the upper surface, an electrode provided on the upper part of the cathode lead, a landing wire connecting the electrode of the light emitting element and the anode lead, and the step. In a light emitting diode consisting of a lens-forming resin layer that is fitted into a lens-forming resin layer and hermetically seals a light-emitting element, the surface of the lens-forming resin layer that contacts the lens-forming resin layer is roughened. Features a light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56164720A JPS5866371A (en) | 1981-10-15 | 1981-10-15 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56164720A JPS5866371A (en) | 1981-10-15 | 1981-10-15 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5866371A true JPS5866371A (en) | 1983-04-20 |
Family
ID=15798604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56164720A Pending JPS5866371A (en) | 1981-10-15 | 1981-10-15 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5866371A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995009444A1 (en) * | 1993-09-30 | 1995-04-06 | Universal Electronics Inc. | Led assembly with enhanced power output |
| EP1318549A2 (en) * | 2001-12-05 | 2003-06-11 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Process of manufacturing an optoelectronic semiconductor device |
| BE1018729A5 (en) * | 2009-04-23 | 2011-07-05 | Ninix Technologies Nv | LED DEVICE, LED AND METHOD FOR MANUFACTURING SUCH LED DEVICE. |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4835496U (en) * | 1971-08-27 | 1973-04-27 | ||
| JPS5150451U (en) * | 1974-10-16 | 1976-04-16 | ||
| JPS5315268U (en) * | 1976-07-20 | 1978-02-08 | ||
| JPS56112773A (en) * | 1980-02-13 | 1981-09-05 | Hitachi Ltd | Package and electronic component using the same |
-
1981
- 1981-10-15 JP JP56164720A patent/JPS5866371A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4835496U (en) * | 1971-08-27 | 1973-04-27 | ||
| JPS5150451U (en) * | 1974-10-16 | 1976-04-16 | ||
| JPS5315268U (en) * | 1976-07-20 | 1978-02-08 | ||
| JPS56112773A (en) * | 1980-02-13 | 1981-09-05 | Hitachi Ltd | Package and electronic component using the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995009444A1 (en) * | 1993-09-30 | 1995-04-06 | Universal Electronics Inc. | Led assembly with enhanced power output |
| EP1318549A2 (en) * | 2001-12-05 | 2003-06-11 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Process of manufacturing an optoelectronic semiconductor device |
| EP1318549A3 (en) * | 2001-12-05 | 2009-04-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Process of manufacturing an optoelectronic semiconductor device |
| BE1018729A5 (en) * | 2009-04-23 | 2011-07-05 | Ninix Technologies Nv | LED DEVICE, LED AND METHOD FOR MANUFACTURING SUCH LED DEVICE. |
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