JPS5864743A - Electron-ray device - Google Patents

Electron-ray device

Info

Publication number
JPS5864743A
JPS5864743A JP16332281A JP16332281A JPS5864743A JP S5864743 A JPS5864743 A JP S5864743A JP 16332281 A JP16332281 A JP 16332281A JP 16332281 A JP16332281 A JP 16332281A JP S5864743 A JPS5864743 A JP S5864743A
Authority
JP
Japan
Prior art keywords
sample
electron
reflected
detector
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16332281A
Other languages
Japanese (ja)
Inventor
Katsushige Tsuno
勝重 津野
Kojin Kondo
行人 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP16332281A priority Critical patent/JPS5864743A/en
Publication of JPS5864743A publication Critical patent/JPS5864743A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To realize a clear reflected-electron image with a high resolution as well as a clear image of the internal part of a sample by placing a diaphragm plate in front of the sample, installing a reflected-electron detector above said diaphragm plate, and providing a means of moving said detector and said diaphragm plate along the optical axis. CONSTITUTION:A diaphragm plate 4 and a reflected-electron detector 5 are supported at the lower end of a holder 7. The holder 7 is attached to an L- shaped driving lever 8, and moved up and down integrally with the lever 8. The lever 8 is supported by a supporter 9, and has a rack 10 in its upper part. The rack 10 comes into engagement with a pinion 11, and the plate 4 and the detector 5 can be moved in the direction of the optical axis by rotating the pinion 11 from outside a mirror body. Owing to the above constitution, a reflected- electron image with a high resolution can be realized by detecting electrons with small energy loss. Consequently, a clear reflected-electron image with information of the internal part of a sample can be obtained.

Description

【発明の詳細な説明】 本発明は高加速電圧走査電子顕微鏡において、高分解能
反射電子像及び試料内部の像を得ることの可能な電子線
装置に関するものである〇高いエネルギーの電子を試料
に照射した場合、試料の奥深くまで浸入し、試料分子に
より多数回の敵乱を受けた後その一部が試料表面より飛
び出してくる0この電子を一般に反射電子と呼んでいる
が、試料内で電子ビームが拡がり、且つ加速電圧が高く
なるほどその拡がりが大きくなるため、電子線を試料と
で走査して反射電子像を得た場き、加速電圧の上昇に伴
って像のぼけが大きくなる〇従って、従来は高い加速電
圧での反射電子像観察は行っていない。所が、反射電子
は試料からの多くの情報を含んでおり、特に高加速電圧
の電子線を用いた場合1こは2次電子像では得られない
試料内部の情報をもたらすため、反射電子を用いて鮮明
な儂を得ることが強(犠まれでいる。
Detailed Description of the Invention The present invention relates to an electron beam device capable of obtaining high-resolution backscattered electron images and images of the interior of a sample in a high-acceleration voltage scanning electron microscope. When this happens, some of the electrons penetrate deep into the sample and are disturbed by the sample molecules many times, before some of them fly out from the sample surface. These electrons are generally called backscattered electrons, but the electron beam inside the sample is spreads, and the spread increases as the accelerating voltage increases, so when an electron beam is scanned with the sample to obtain a backscattered electron image, the blur of the image increases as the accelerating voltage increases〇Therefore, Conventionally, backscattered electron images have not been observed at high accelerating voltages. However, backscattered electrons contain a lot of information from the sample, and especially when an electron beam with a high acceleration voltage is used, it brings information about the inside of the sample that cannot be obtained from a secondary electron image. It is strong (sacrificed) to use it to obtain a clear sense of self.

本発明はこの様な要望を満たすことのできる装置を提供
するもので、試料をレンズ磁場の中、又はその直ぐ後方
に置き、試料からの反射電子線をこのレンズ磁場により
結像せしめエネルギー分離を行う如くなし、#l記試料
の前方に絞り板を置き、この絞り板の上方に反射電子検
出器を設置し、該反射電子検出器と絞り板とを光軸に沿
って移動させる手段を備えていることを特徴とするもの
であるO 以下の面に基づき説明する。第11は本発明の詳細な説
明する図であり、1及び2は対物レンズの上磁極及び下
磁極を夫々示しである。対物レンズは図示しないが前記
磁f&に繋がるヨーク及び励磁コイルを有しており、こ
の励磁コイルに電流を流すことにより上磁極1と下磁極
2の間に強いレンズ磁場を形成する。B8はレンズ磁場
の軸上磁場分布を示しである。対物レンズの上方lζは
図示しないが通常集束レンズ、電子銃及び走査用偏向コ
イルが設置され、電子銃から発射された電子線を集束・
走査しながら、対物レンズ磁場内に置かれた試料6に照
射する◎Cの試料6に高加速(例えば加速電圧100K
V)の電子線を照射した場合、この電子線は試料内部で
散乱し、エネルギーロスを受けてその一部が試料表面よ
り反射電子として飛び出す0この反射電子は入射電子の
エネルギーより低い種々のエネルギーを持っており、対
物レンズの磁界により夫々エネルギー毎に結像される。
The present invention provides an apparatus that can meet these demands, and in which a sample is placed in or immediately behind a lens magnetic field, and the reflected electron beam from the sample is imaged by the lens magnetic field, thereby separating energy. As described above, a diaphragm plate is placed in front of the sample described in #l, a backscattered electron detector is installed above the diaphragm plate, and means is provided for moving the backscattered electron detector and the diaphragm plate along the optical axis. O, which is characterized by the following characteristics, will be explained based on the following aspects. 11 is a diagram explaining the present invention in detail, and 1 and 2 indicate the upper and lower magnetic poles of the objective lens, respectively. Although not shown, the objective lens has a yoke and an excitation coil connected to the magnetic f&, and a strong lens magnetic field is formed between the upper magnetic pole 1 and the lower magnetic pole 2 by passing a current through the excitation coil. B8 shows the axial magnetic field distribution of the lens magnetic field. Although not shown above the objective lens, a focusing lens, an electron gun, and a scanning deflection coil are usually installed, and the electron beam emitted from the electron gun is focused and
While scanning, irradiate the sample 6 placed within the objective lens magnetic field.
When the electron beam of V) is irradiated, this electron beam is scattered inside the sample, undergoes energy loss, and part of it jumps out from the sample surface as reflected electrons. These reflected electrons have various energies lower than the energy of the incident electrons. , and images are formed for each energy by the magnetic field of the objective lens.

図中、暑は20KeVの電子のフォーカス点、又すは4
0KeV # Cは60KeV、dは80KeVそして
eは100KeV(エネルギーロスが零)の電子のフォ
ーカス点であり、光軸方向に分離している。そして図の
如(20KeVの間隔で分けるとすると夫々の間隔は5
mm以上以上なる0又、エネルギーロスを受けなかった
電子(100KeV)は、前段の集束レンズのクロスオ
ーバー像の位置に一致してフォーカスする。この嫌に分
離された電子の各フォーカス点(a、b、c・・・)に
検出器を置くことはできないし、又、置いたとしても軸
上1こは全エネルキーの電子が存在するので、単一エネ
ルギーの1子の検出は行えない〇 本発明はJIEI図で示したように分離された電子の断
値とする特定エネルギーの電子のみを効率的に検出でき
るような新規な検出手段を提案する°もので、第2図に
示す如く、光軸を中心に片側たけに第3図の如き半円状
の絞り板4を置き、その上方に検出lI5を置くもので
ある〇 上記絞り板Iどは光軸付近lこ切り欠き、又は孔6が設
けられ照射電子線の通過を阻害しないようにしである0
又、この絞り板の形状は半円状に限られるものではなく
、それlζ類似の形状2例えば扇形であっても、或いは
完全な円形であっても良い。
In the figure, heat is the 20KeV electron focus point, or 4
0KeV #C is a focus point of electrons of 60KeV, d is 80KeV, and e is 100KeV (zero energy loss), and they are separated in the optical axis direction. And as shown in the figure (if it is divided into intervals of 20 KeV, each interval is 5
Electrons (100 KeV) which have a diameter of 0 mm or more and which have not suffered any energy loss are focused in accordance with the position of the crossover image of the focusing lens in the previous stage. It is not possible to place a detector at each focus point (a, b, c...) of these undesirably separated electrons, and even if a detector were placed, there would be electrons with all energy keys at one point on the axis. , it is not possible to detect a single child with a single energy.The present invention provides a novel detection means that can efficiently detect only electrons with a specific energy, which is the cutoff of separated electrons, as shown in the JIEI diagram. As shown in Fig. 2, a semicircular diaphragm plate 4 as shown in Fig. 3 is placed on one side of the optical axis, and a detection device 5 is placed above it. A notch or hole 6 is provided near the optical axis so as not to obstruct the passage of the irradiated electron beam.
Further, the shape of this diaphragm plate is not limited to a semicircular shape, but may be a similar shape 2, for example, a fan shape, or a complete circle.

一方、前記検出器5としては、例えばP−N接合型の半
導体検出器が用いられ、検出効率を良くするために図の
如く傾斜させることが好ましい〇又、検出器の光軸方向
の長さを短かくするか、もう一枚絞り板を設けて光軸方
向の電子入射幅を狭くすれば、エネルギー幅の非常に狭
い電子のみを検出できる。絞り板40光軸方゛向の位置
により検出電子のエネルギーが決定され、図では約60
KeVの電子が検出されている。而して、絞り板4と検
出器5を矢印の如く光軸方向へ移動させれば、所1とす
るエネルギーの反射電子を検出することができる。
On the other hand, as the detector 5, for example, a PN junction type semiconductor detector is used, and in order to improve the detection efficiency, it is preferable to tilt it as shown in the figure. Also, the length of the detector in the optical axis direction If the width of electron incidence in the optical axis direction is narrowed by shortening , or by providing another diaphragm plate, it is possible to detect only electrons with a very narrow energy width. The energy of the detected electrons is determined by the position of the diaphragm plate 40 in the optical axis direction.
KeV electrons have been detected. By moving the diaphragm plate 4 and the detector 5 in the direction of the optical axis as shown by the arrow, it is possible to detect reflected electrons having an energy of 1.

第4図は絞り板及び検出器の移動II#Iの一例を示す
もので、絞り板4及び検出器5はホルダー7の下端部に
保持されている。このホルダーは5字形の駆動杆8に取
り付けられ一本的にと下動せられる。この駆動杆は保持
体9に支えられており、父上部にはラック10を有して
いる。該ラックはピニオン11と噛み合っており、鏡体
外よりの操作によりこのピニオンを回転させれば、絞り
板4及び検出!S5を光軸方向に移動できる。この実施
例において、絞り板や検出器が対物レンズの上磁極の内
部に挿入されるので、該上磁極の孔径はそれを許容する
!m変の大きなもの(直径20mm以上)に加工され、
従ってレンズは非対称となる。
FIG. 4 shows an example of movement II#I of the aperture plate and the detector, in which the aperture plate 4 and the detector 5 are held at the lower end of the holder 7. This holder is attached to a 5-shaped drive rod 8 and can be moved downward in one motion. This drive rod is supported by a holder 9 and has a rack 10 on the upper part. The rack is engaged with a pinion 11, and if this pinion is rotated by an operation from outside the mirror body, the aperture plate 4 and the detection! S5 can be moved in the optical axis direction. In this embodiment, since the aperture plate and the detector are inserted inside the upper pole of the objective lens, the aperture diameter of the upper pole allows it! Processed into large m-change (diameter 20mm or more),
The lens is therefore asymmetrical.

以上の構成となせば新値とする幅の狭いエネルギーの反
射電子のみを検出できるので、エネルギーロスの少い電
子の検出により解像度の高い反射電子像を得ることがで
き、又エネルギーロスの大きな電子の検出ICより試料
内部(深部)の情報をもつ鮮明な反射電子像を得ること
ができる。
With the above configuration, it is possible to detect only the backscattered electrons with a narrow range of energy as new values, so it is possible to obtain a high-resolution backscattered electron image by detecting electrons with little energy loss. A clear backscattered electron image containing information about the inside (deep part) of the sample can be obtained using the detection IC.

尚、上記実施例では試料を対物レンズの磁場の中#C置
いたが、レンズの構造上、或いは試料の性質上磁場中に
試料を置けない場合には鋏磁場d直ぐ後方に置けば良い
In the above example, the sample was placed in the magnetic field of the objective lens, but if it is not possible to place the sample in the magnetic field due to the structure of the lens or the nature of the sample, it may be placed directly behind the magnetic field d of the scissors.

Claims (1)

【特許請求の範囲】 L 集束電子線を試料土に照射すると共1こ2次元的l
ζ走査し、電子線照射点よりの反射電子線を検出し′・
、画偉衆示する装置において、試料をレンズ磁場の中、
又はその直ぐ後方に置き、試料からの反射電子線をこの
レンズ磁場により結像せしめエネルギー分離を行う如く
なし、前記試料の前方に絞り板を置き、この絞り板の1
方に反射電子検出器を設置し、該反射電子検出器と絞り
板とを光軸lこ沿って移動させる手段を備えていること
を特徴とする電子線装置 L@紀絞り板は半円形、又はそれIこ類似の形状である
特許請求の範囲第1項記載の電子線装置
[Claims] L When a sample soil is irradiated with a focused electron beam, one or two-dimensional L
ζ scan and detect the reflected electron beam from the electron beam irradiation point ′・
In the apparatus shown in the image, the sample is placed in a lens magnetic field.
Or, place it directly behind the sample, and image the reflected electron beam from the sample using this lens magnetic field to perform energy separation. Place an aperture plate in front of the sample, and
The electron beam device L@ is characterized by having a backscattered electron detector installed on one side, and a means for moving the backscattered electron detector and a diaphragm plate along the optical axis. or an electron beam device according to claim 1, which has a similar shape.
JP16332281A 1981-10-13 1981-10-13 Electron-ray device Pending JPS5864743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16332281A JPS5864743A (en) 1981-10-13 1981-10-13 Electron-ray device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16332281A JPS5864743A (en) 1981-10-13 1981-10-13 Electron-ray device

Publications (1)

Publication Number Publication Date
JPS5864743A true JPS5864743A (en) 1983-04-18

Family

ID=15771634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16332281A Pending JPS5864743A (en) 1981-10-13 1981-10-13 Electron-ray device

Country Status (1)

Country Link
JP (1) JPS5864743A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0431289A2 (en) * 1989-12-04 1991-06-12 International Business Machines Corporation Apparatus for testing samples using charged particles

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0431289A2 (en) * 1989-12-04 1991-06-12 International Business Machines Corporation Apparatus for testing samples using charged particles
JPH03182039A (en) * 1989-12-04 1991-08-08 Internatl Business Mach Corp <Ibm> Magnetic filter system low loss scanning type electron microscope

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