JPH07240168A - Scanning electron microscope - Google Patents

Scanning electron microscope

Info

Publication number
JPH07240168A
JPH07240168A JP3112994A JP3112994A JPH07240168A JP H07240168 A JPH07240168 A JP H07240168A JP 3112994 A JP3112994 A JP 3112994A JP 3112994 A JP3112994 A JP 3112994A JP H07240168 A JPH07240168 A JP H07240168A
Authority
JP
Japan
Prior art keywords
objective lens
secondary electron
electrode
cylindrical electrode
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3112994A
Other languages
Japanese (ja)
Inventor
Hiroyoshi Kazumori
啓悦 数森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP3112994A priority Critical patent/JPH07240168A/en
Publication of JPH07240168A publication Critical patent/JPH07240168A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To improve the detecting efficiency of secondary electron in a scanning electron microscope for introducing the secondary electron onto the upper part of an objective lens to detect the secondary electron. CONSTITUTION:The secondary electron (e) ascending in the passage of electron beam EB of an objective lens 11 is moved to be wound on the electron beam optical axis by the axial magnetic field of the objective lens 11. The secondary electron directing an inside magnetic pole 12 is attracted by a mesh second cylindrical electrode 18, and passed through the electrode 18. The secondary electron passed through the electrode 18 is drawn back in the second electrode 18 direction by the potential between a first cylindrical electrode 17 having an earth potential and the second cylindrical electrode 18 to which a positive voltage is applied. The secondary electron drawn back in the optical axial direction is again passed through the mesh electrode 18. Thus, the secondary electron (e) reaches the upper part of the objective lens 11, and is incident to a secondary electron detector 15 and detected thereby.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、試料に電子ビームを照
射し、試料から発生した2次電子を対物レンズ上部に配
置した2次電子検出器によって検出するようにした走査
電子顕微鏡に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning electron microscope in which a sample is irradiated with an electron beam and secondary electrons generated from the sample are detected by a secondary electron detector arranged above an objective lens.

【0002】[0002]

【従来の技術】走査電子顕微鏡においては、通常、2次
電子検出器を対物レンズの下部、すなわち、試料に接近
して配置している。しかし、最近高分解能像観察のた
め、試料を対物レンズ内部に配置したり、試料と対物レ
ンズ磁極の下端面とを極めて接近させ、いわゆる差動距
離(ワーキングディスタンス)を短くして試料の観察を
行うケースがある。この場合、2次電子検出器を対物レ
ンズ上部に配置し、2次電子を対物レンズ内部の電子ビ
ーム通過路を通して対物レンズの上方で検出する方式が
一般的である。
2. Description of the Related Art In a scanning electron microscope, a secondary electron detector is usually arranged under an objective lens, that is, close to a sample. However, recently, for high-resolution image observation, the sample is placed inside the objective lens or the sample and the lower end surface of the objective lens magnetic pole are made extremely close to each other to shorten the so-called differential distance (working distance) to observe the sample. There are cases to do. In this case, it is common to arrange a secondary electron detector above the objective lens and detect the secondary electrons above the objective lens through an electron beam passage inside the objective lens.

【0003】図1は試料を対物レンズ内部に配置したイ
ンレンズ型の走査電子顕微鏡の対物レンズ部分を示して
いる。図中1は対物レンズであり、対物レンズ1内部に
試料2が配置される。試料2には1次電子ビームEBが
照射される。対物レンズ1の上部の電子ビームの光軸か
ら離れた場所に2次電子検出器3が設けられている。こ
の2次電子検出器3は、シンチレータと光電子増倍管よ
り構成された検出器であり、検出器3のシンチレータの
前面にはリング状の電極4が取り付けられており、その
電極4に2次電子を引き寄せるための正の電圧が印加さ
れる。
FIG. 1 shows an objective lens portion of an in-lens type scanning electron microscope in which a sample is arranged inside an objective lens. In the figure, reference numeral 1 denotes an objective lens, and a sample 2 is arranged inside the objective lens 1. The sample 2 is irradiated with the primary electron beam EB. A secondary electron detector 3 is provided above the objective lens 1 at a position away from the optical axis of the electron beam. The secondary electron detector 3 is a detector including a scintillator and a photomultiplier tube. A ring-shaped electrode 4 is attached to the front surface of the scintillator of the detector 3, and the secondary electrode 4 is attached to the electrode 4. A positive voltage is applied to attract the electrons.

【0004】このような構成で、電子ビームEBを図示
していない集束レンズと対物レンズ1とによって細く集
束し、試料2上に照射する。また試料2上の電子ビーム
の照射位置は図示していない走査コイルに走査信号を供
給することによって2次元に走査される。電子ビームE
Bの試料2への照射により2次電子eが発生するが、こ
の2次電子eは、インレンズ走査電子顕微鏡の場合、強
磁場が対物レンズ下面より上方に存在するために、対物
レンズ1の磁場によって拘束され、電子ビームの光軸上
に巻き付きながらあまり動径方向に広がらずに上昇す
る。対物レンズ1の上部に到達した2次電子eは、2次
電子検出器3の電極4に印加された電圧に基づく電界に
より検出器3方向に引き寄せられ、検出器3によって検
出される。検出された信号は図示していないが、陰極線
管に供給されて2次電子走査像が表示される。
With such a structure, the electron beam EB is finely focused by a focusing lens (not shown) and the objective lens 1, and is irradiated onto the sample 2. The irradiation position of the electron beam on the sample 2 is two-dimensionally scanned by supplying a scanning signal to a scanning coil (not shown). Electron beam E
When the sample 2 is irradiated with B, a secondary electron e is generated. In the case of the in-lens scanning electron microscope, the secondary electron e exists in the objective lens 1 because the strong magnetic field exists above the lower surface of the objective lens. Constrained by the magnetic field, it wraps around the optical axis of the electron beam and rises without spreading much in the radial direction. The secondary electrons e reaching the upper part of the objective lens 1 are attracted toward the detector 3 by the electric field based on the voltage applied to the electrode 4 of the secondary electron detector 3, and are detected by the detector 3. Although not shown, the detected signal is supplied to the cathode ray tube to display a secondary electron scanning image.

【0005】図2は差動距離を短くした走査電子顕微鏡
の対物レンズ部分を示している。この図で図1の走査電
子顕微鏡と同一ないしは類似構成要素には同一番号が付
されている。図中5は対物レンズであり、この対物レン
ズ5は試料2の移動の制限を少なくするために下部磁極
片6の傾斜角θを大きくしてある。2次電子検出器3は
図1のケースと同様に対物レンズ5の上部に配置されて
いる。
FIG. 2 shows an objective lens portion of a scanning electron microscope in which the differential distance is shortened. In this figure, the same or similar components as those of the scanning electron microscope of FIG. 1 are designated by the same reference numerals. In the figure, reference numeral 5 denotes an objective lens, and in this objective lens 5, the inclination angle θ of the lower magnetic pole piece 6 is made large in order to reduce the restriction of the movement of the sample 2. The secondary electron detector 3 is arranged above the objective lens 5 as in the case of FIG.

【0006】この図2の構成でもインレンズ走査電子顕
微鏡と同様に、試料2からの2次電子eは、対物レンズ
5の磁場によって拘束され、電子ビームEBの光軸の巻
き付きながら対物レンズ5上部に到達する。対物レンズ
5上部に到達した2次電子eは、2次電子検出器3の電
極4に印加された電圧に基づく電界により検出器3方向
に引き寄せられ、検出器3によって検出される。
In the configuration of FIG. 2 as well, similar to the in-lens scanning electron microscope, the secondary electrons e from the sample 2 are constrained by the magnetic field of the objective lens 5 and the upper part of the objective lens 5 while the optical axis of the electron beam EB is wound. To reach. The secondary electrons e reaching the upper part of the objective lens 5 are attracted toward the detector 3 by the electric field based on the voltage applied to the electrode 4 of the secondary electron detector 3, and are detected by the detector 3.

【0007】[0007]

【発明が解決しようとする課題】図1も図2の構成共
に、2次電子eは対物レンズ1や5の軸上磁場に巻き付
いて上昇するが、その上昇につれて軸上磁場が小さくな
る部分では、対物レンズ1や5の内側磁極片に近付いた
とき、2次電子は磁極片に向かって進み、磁極片に衝突
してしまう。そのため、2次電子eの検出効率が良くな
い。また、図2の構成では、対物レンズ5の下部磁極片
6の傾斜角θを大きくしているため、対物レンズの磁気
飽和を考慮する必要から、電子ビームの通過路の内径が
小さくなり、また、2次電子発生点(試料2)から検出
器3までの距離が長くなる。そのため、より2次電子e
が磁極片に衝突して消滅する確率は高くなる。更に、図
1,図2の構成共に、対物レンズ1,5の内部に非点補
正コイルやダイナミックフォーカスコイルなどを配置す
る関係上、対物レンズ内部の電子ビーム通過路の内径が
小さくなる場合が多い。
In both the configuration shown in FIG. 1 and the configuration shown in FIG. 2, the secondary electrons e are wound around the axial magnetic field of the objective lens 1 or 5 and rise, but in the portion where the axial magnetic field becomes smaller as it rises. When approaching the inner pole piece of the objective lens 1 or 5, the secondary electrons travel toward the pole piece and collide with the pole piece. Therefore, the detection efficiency of the secondary electrons e is not good. Further, in the configuration of FIG. 2, since the inclination angle θ of the lower pole piece 6 of the objective lens 5 is made large, it is necessary to consider the magnetic saturation of the objective lens, so that the inner diameter of the passage of the electron beam becomes small, and The distance from the secondary electron generation point (sample 2) to the detector 3 becomes long. Therefore, more secondary electrons e
Has a high probability of colliding with the pole piece and disappearing. Further, in both the configurations shown in FIGS. 1 and 2, the inner diameter of the electron beam passage inside the objective lens is often small due to the arrangement of the astigmatism correction coil and the dynamic focus coil inside the objective lenses 1 and 5. .

【0008】本発明は、このような点に鑑みてなされた
もので、その目的は、対物レンズ磁場によって対物レン
ズ上部にまで2次電子を導いて2次電子を検出する走査
電子顕微鏡において、2次電子の検出効率を向上させる
ことができる走査電子顕微鏡を実現するにある。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a scanning electron microscope which guides secondary electrons to the upper part of the objective lens by a magnetic field of the objective lens and detects the secondary electrons. It is to realize a scanning electron microscope capable of improving the detection efficiency of secondary electrons.

【0009】[0009]

【課題を解決するための手段】本発明に基づく走査電子
顕微鏡は、対物レンズ上部に配置された2次電子検出器
によって検出された信号に基づき走査像を表示するよう
にした走査電子顕微鏡において、対物レンズ内部に電子
ビームの光軸に沿って第1の円筒状の電極と、その内側
に2次電子の通過部分を有した第2の円筒状電極とを配
置し、第2の円筒状電極に正の電圧を印加する共に、第
1の円筒状電極の電位を第2の円筒状電極の電位より低
く保つように構成したことを特徴としている。
A scanning electron microscope according to the present invention is a scanning electron microscope adapted to display a scanning image based on a signal detected by a secondary electron detector arranged above an objective lens. A first cylindrical electrode is arranged inside the objective lens along the optical axis of the electron beam, and a second cylindrical electrode having a passage portion for secondary electrons is arranged inside the second cylindrical electrode. It is characterized in that a positive voltage is applied to the first cylindrical electrode and the potential of the first cylindrical electrode is kept lower than the potential of the second cylindrical electrode.

【0010】[0010]

【作用】本発明に基づく走査電子顕微鏡は、対物レンズ
内部に第1と第2の円筒状電極を配置し、第1と第2の
円筒状電極が形成する電場により2次電子を光軸方向に
戻す。
In the scanning electron microscope according to the present invention, the first and second cylindrical electrodes are arranged inside the objective lens, and the secondary electrons are directed in the optical axis direction by the electric field formed by the first and second cylindrical electrodes. Return to.

【0011】[0011]

【実施例】以下、図面を参照して本発明の実施例を詳細
に説明する。図3は本発明の一実施例である走査電子顕
微鏡の対物レンズ部分を示している。11は対物レンズ
であり、この対物レンズ11は、内側磁極12、外側磁
極13、コイル14より構成されている。この対物レン
ズ11により磁極12,13の下端面より下方にレンズ
磁場が形成され、このレンズ磁場の中に試料30が配置
される。
Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 3 shows an objective lens portion of a scanning electron microscope which is an embodiment of the present invention. Reference numeral 11 denotes an objective lens, which is composed of an inner magnetic pole 12, an outer magnetic pole 13, and a coil 14. A lens magnetic field is formed below the lower end surfaces of the magnetic poles 12 and 13 by the objective lens 11, and the sample 30 is placed in the lens magnetic field.

【0012】この対物レンズ11の上部の光軸から離れ
た位置に2次電子検出器15が設けられている。2次電
子検出器15はシンチレータと光電子増倍管とを組み合
わせた構造を有しており、円形状のシンチレータの周囲
部分にはリング状の電極16が設けられ、その電極16
には2次電子を引き寄せる正の電圧が印加される。この
電圧値は数kVから数10kVの範囲から選択される。
2次電子検出器15の検出信号は、図示していないが、
電子ビームEBの走査と同期した陰極線管に供給され
る。
A secondary electron detector 15 is provided above the objective lens 11 at a position away from the optical axis. The secondary electron detector 15 has a structure in which a scintillator and a photomultiplier tube are combined, and a ring-shaped electrode 16 is provided around the circular scintillator.
Is applied with a positive voltage that attracts secondary electrons. This voltage value is selected from the range of several kV to several tens of kV.
The detection signal of the secondary electron detector 15 is not shown,
It is supplied to a cathode ray tube synchronized with the scanning of the electron beam EB.

【0013】対物レンズ11の中心部分の電子ビームの
通過路には、第1の円筒状の電極17が配置されてい
る。この第1の円筒状の電極17の内側には、メッシュ
状の第2の円筒状電極18が配置されているが、第1と
第2の円筒状の電極17,18共に電子ビームEBの光
軸に対称的に配置されている。第1の円筒状電極17は
接地電位とされており、また、第2の円筒状電極18は
電源19から正の電圧、例えば、+50V程度が印加さ
れている。第1の円筒状電極17の外側には、ダイナミ
ックフォーカスコイル20と非点補正コイル21が設け
られている。このような構成の動作は次の通りである。
A first cylindrical electrode 17 is arranged in the passage of the electron beam in the central portion of the objective lens 11. A mesh-shaped second cylindrical electrode 18 is arranged inside the first cylindrical electrode 17, and both the first and second cylindrical electrodes 17 and 18 emit light of the electron beam EB. They are arranged symmetrically about the axis. The first cylindrical electrode 17 is set to the ground potential, and the second cylindrical electrode 18 is applied with a positive voltage from the power source 19, for example, about + 50V. A dynamic focus coil 20 and an astigmatism correction coil 21 are provided outside the first cylindrical electrode 17. The operation of such a configuration is as follows.

【0014】上記した構成で、2次電子像を観察する場
合、図示していない走査信号発生回路から所定の走査信
号が走査コイルに供給され、試料30上の任意の2次元
領域が電子ビームEBによってラスター走査される。こ
こで、対物レンズ11は内側磁極12と外側磁極13の
下端面より下方に単一のレンズ磁場が形成されるように
構成されており、このレンズ磁場の中に試料30が配置
されている。試料30への電子ビームの照射によって発
生した2次電子eは、レンズ磁場により拘束されて上方
に向かう。
When observing a secondary electron image with the above-mentioned structure, a predetermined scanning signal is supplied from a scanning signal generating circuit (not shown) to the scanning coil, and an arbitrary two-dimensional area on the sample 30 is irradiated with the electron beam EB. Raster-scanned by. Here, the objective lens 11 is configured so that a single lens magnetic field is formed below the lower end surfaces of the inner magnetic pole 12 and the outer magnetic pole 13, and the sample 30 is placed in this lens magnetic field. Secondary electrons e generated by irradiating the sample 30 with the electron beam are constrained by the lens magnetic field and travel upward.

【0015】対物レンズ11の電子ビームEBの通過路
を上昇する2次電子eは、対物レンズ11の軸上磁場に
より電子ビーム光軸に巻き付くように運動する。この
内、内側磁極12に向かう2次電子は、メッシュ状の第
2の円筒状電極18に引き寄せられ、この電極18を通
り抜ける。電極18を通り抜けた2次電子は、接地電位
の第1の円筒状電極17と正の電圧が印加されている第
2の円筒状電極18との間の電位により、第2の電極1
8方向に引き戻される。電極18方向(光軸方向)に引
き戻された2次電子は、再びメッシュ電極18を通り抜
ける。
The secondary electrons e ascending in the passage of the electron beam EB of the objective lens 11 move so as to be wrapped around the electron beam optical axis by the axial magnetic field of the objective lens 11. Of these, the secondary electrons toward the inner magnetic pole 12 are attracted to the mesh-shaped second cylindrical electrode 18 and pass through the electrode 18. The secondary electrons that have passed through the electrode 18 are generated by the potential between the first cylindrical electrode 17 at ground potential and the second cylindrical electrode 18 to which a positive voltage is applied.
It is pulled back in eight directions. The secondary electrons pulled back in the direction of the electrode 18 (optical axis direction) pass through the mesh electrode 18 again.

【0016】このようにして、2次電子eはほとんどど
こにも吸収されることなく対物レンズ11内部の電子ビ
ームEBの通過路を上昇し、対物レンズ11の上部に到
達する。対物レンズ11の上部では、2次電子検出器1
5の前面に印加された電圧に基づく電界が形成されてい
る。この電界により試料30から発生し対物レンズ13
内を上方に向かってきた2次電子は、検出器15方向に
曲げられ、そして、2次電子検出器15に入射して検出
される。その検出信号は、図示していないが、増幅器を
介して陰極線管に供給され、陰極線管には試料の任意の
領域の2次電子像が表示される。
In this way, the secondary electrons e rise in the passage of the electron beam EB inside the objective lens 11 and reach the upper portion of the objective lens 11 without being absorbed almost anywhere. Above the objective lens 11, the secondary electron detector 1
An electric field based on the voltage applied to the front surface of No. 5 is formed. This electric field causes the objective lens 13 generated from the sample 30.
The secondary electrons that have gone upward inside are bent toward the detector 15, and then enter the secondary electron detector 15 to be detected. Although not shown, the detection signal is supplied to the cathode ray tube through an amplifier, and the secondary electron image of an arbitrary region of the sample is displayed on the cathode ray tube.

【0017】以上本発明の一実施例を説明したが、本発
明はこの実施例に限定されない。例えば、対物レンズの
構造は、図3の構造以外に図1の完全なインレンズ方式
や、図2の構造を用いても良い。また、第1の円筒状電
極18をメッシュによって形成したが、螺旋状に細いワ
イヤを巻いて円筒状とした電極でもよく、円筒状の電極
に多数の微小孔を穿ったものを用いてもよい。更に、第
2の円筒状電極を接地電位としたが、正あるいは負の電
位としても良い。その場合、第1と第2の円筒状電極に
より2次電子を光軸方向に戻すことができれば良い。
Although one embodiment of the present invention has been described above, the present invention is not limited to this embodiment. For example, as the structure of the objective lens, the complete in-lens method of FIG. 1 or the structure of FIG. 2 may be used in addition to the structure of FIG. Further, although the first cylindrical electrode 18 is formed of a mesh, it may be a cylindrical electrode formed by winding a thin wire in a spiral shape, or a cylindrical electrode having a large number of minute holes may be used. . Furthermore, although the second cylindrical electrode has a ground potential, it may have a positive or negative potential. In that case, it suffices if the secondary electrons can be returned in the optical axis direction by the first and second cylindrical electrodes.

【0018】[0018]

【発明の効果】以上説明したように、本発明に基づく走
査電子顕微鏡は、対物レンズ内部に第1と第2の円筒状
電極を配置し、第1と第2の円筒状電極が形成する電場
により2次電子を光軸方向に戻すように構成したので、
対物レンズ磁場によって対物レンズ上部にまで2次電子
を導いて2次電子を検出する走査電子顕微鏡において、
2次電子の検出効率を向上させることができる。また、
第1と第2の円筒状電極は、電子ビームの光軸に軸対称
に配置されるため、1次電子ビームEBに悪影響を与え
ない。更に、対物レンズ内部に非点補正コイルやダイナ
ミックフォーカスコイルを配置し、実質的に対物レンズ
内径が小さくなっても、2次電子が対物レンズ内部でい
ずれかの部材に衝突して消滅することは防止される。
As described above, in the scanning electron microscope according to the present invention, the first and second cylindrical electrodes are arranged inside the objective lens, and the electric field formed by the first and second cylindrical electrodes. Since it is configured to return the secondary electrons in the optical axis direction by
In a scanning electron microscope that guides secondary electrons to the upper part of the objective lens by the objective lens magnetic field and detects the secondary electrons,
The detection efficiency of secondary electrons can be improved. Also,
The first and second cylindrical electrodes are arranged symmetrically with respect to the optical axis of the electron beam, and therefore do not adversely affect the primary electron beam EB. Furthermore, by arranging an astigmatism correction coil and a dynamic focus coil inside the objective lens, even if the inner diameter of the objective lens is substantially reduced, secondary electrons will not collide with any member inside the objective lens and disappear. To be prevented.

【図面の簡単な説明】[Brief description of drawings]

【図1】従来のインレンズ方式の走査電子顕微鏡におけ
る対物レンズ部分と2次電子検出器とを示す図である。
FIG. 1 is a diagram showing an objective lens portion and a secondary electron detector in a conventional in-lens type scanning electron microscope.

【図2】従来の走査電子顕微鏡における対物レンズ部分
と2次電子検出器とを示す図である。
FIG. 2 is a diagram showing an objective lens portion and a secondary electron detector in a conventional scanning electron microscope.

【図3】本発明の一実施例を示す図である。FIG. 3 is a diagram showing an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

11 対物レンズ 12 内側磁極 13 外側磁極 15 2次電子検出器 17 第1の円筒状電極 18 第2の円筒状電極 19 電源 20 ダイナミックフォーカスコイル 21 非点補正コイル 30 試料 11 Objective Lens 12 Inner Magnetic Pole 13 Outer Magnetic Pole 15 Secondary Electron Detector 17 First Cylindrical Electrode 18 Second Cylindrical Electrode 19 Power Supply 20 Dynamic Focus Coil 21 Astigmatism Correction Coil 30 Sample

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 対物レンズ上部に配置された2次電子検
出器によって検出された信号に基づき走査像を表示する
ようにした走査電子顕微鏡において、対物レンズ内部に
電子ビームの光軸に沿って第1の円筒状の電極と、その
内側に2次電子の通過部分を有した第2の円筒状電極と
を配置し、第2の円筒状電極に正の電圧を印加する共
に、第1の円筒状電極の電位を第2の円筒状電極の電位
より低く保つように構成した走査電子顕微鏡。
1. A scanning electron microscope configured to display a scanning image on the basis of a signal detected by a secondary electron detector arranged above an objective lens, wherein a scanning image is displayed inside the objective lens along an optical axis of an electron beam. A cylindrical electrode of No. 1 and a second cylindrical electrode having a passage of secondary electrons inside thereof are arranged, and a positive voltage is applied to the second cylindrical electrode and Scanning electron microscope configured to keep the potential of the cylindrical electrode lower than the potential of the second cylindrical electrode.
【請求項2】 対物レンズは、内側磁極と外側磁極を有
し、磁極の下端面より下方に単一のレンズ磁場を形成
し、このレンズ磁場中に試料を配置した請求項1記載の
走査電子顕微鏡。
2. The scanning electron according to claim 1, wherein the objective lens has an inner magnetic pole and an outer magnetic pole, forms a single lens magnetic field below the lower end surface of the magnetic pole, and arranges the sample in the lens magnetic field. microscope.
JP3112994A 1994-03-01 1994-03-01 Scanning electron microscope Withdrawn JPH07240168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3112994A JPH07240168A (en) 1994-03-01 1994-03-01 Scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3112994A JPH07240168A (en) 1994-03-01 1994-03-01 Scanning electron microscope

Publications (1)

Publication Number Publication Date
JPH07240168A true JPH07240168A (en) 1995-09-12

Family

ID=12322822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3112994A Withdrawn JPH07240168A (en) 1994-03-01 1994-03-01 Scanning electron microscope

Country Status (1)

Country Link
JP (1) JPH07240168A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000019482A1 (en) * 1998-09-25 2000-04-06 Hitachi, Ltd. Scanning electron microscope
JP2009009949A (en) * 2008-09-01 2009-01-15 Hitachi Ltd Scanning electron microscope
EP2197016A2 (en) 2008-12-10 2010-06-16 Jeol Ltd. Electron beam apparatus and method of operating the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000019482A1 (en) * 1998-09-25 2000-04-06 Hitachi, Ltd. Scanning electron microscope
US6501077B1 (en) 1998-09-25 2002-12-31 Hitachi, Ltd. Scanning electron microscope
JP4300710B2 (en) * 1998-09-25 2009-07-22 株式会社日立製作所 Scanning electron microscope
JP2009009949A (en) * 2008-09-01 2009-01-15 Hitachi Ltd Scanning electron microscope
JP4596061B2 (en) * 2008-09-01 2010-12-08 株式会社日立製作所 Scanning electron microscope
EP2197016A2 (en) 2008-12-10 2010-06-16 Jeol Ltd. Electron beam apparatus and method of operating the same
US8076642B2 (en) 2008-12-10 2011-12-13 Jeol Ltd. Electron beam apparatus and method of operating the same

Similar Documents

Publication Publication Date Title
JP3081393B2 (en) Scanning electron microscope
JP2919170B2 (en) Scanning electron microscope
JP3786875B2 (en) Objective lens for charged particle beam devices
US4442355A (en) Device for detecting secondary electrons in a scanning electron microscope
US6555816B1 (en) Scanning electron microscope and sample observation method using the same
JPH11148905A (en) Electron beam inspection method and apparatus therefor
JP3372138B2 (en) Scanning electron microscope
US3717761A (en) Scanning electron microscope
GB2081501A (en) Device for detecting secondary electrons in a scanning electron microscope
JP4292068B2 (en) Scanning electron microscope
JP3432091B2 (en) Scanning electron microscope
JP2003151484A (en) Scanning type charged particle beam device
JP6950088B2 (en) Charged particle beam device and detector position adjustment method for charged particle beam device
JPH0935679A (en) Scanning electron microscope
US6710340B2 (en) Scanning electron microscope and method of detecting electrons therein
JP2021048114A (en) Scanning electron microscope and secondary electron detection method for scanning electron microscope
JPH07240168A (en) Scanning electron microscope
JP3244620B2 (en) Scanning electron microscope
JPS5835854A (en) Secondary electron detection unit
JPH09134665A (en) Electron beam device
US7161149B2 (en) Scanning electron microscope and method of controlling same
JP3014369B2 (en) Electron beam device equipped with sample height measuring means
JP2001057172A (en) Scanning electron microscope
JP2001243904A (en) Scanning electron microscope
JP3101141B2 (en) Electron beam equipment

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20010508