JPS5864384A - エツチング終点検出方法 - Google Patents

エツチング終点検出方法

Info

Publication number
JPS5864384A
JPS5864384A JP16458981A JP16458981A JPS5864384A JP S5864384 A JPS5864384 A JP S5864384A JP 16458981 A JP16458981 A JP 16458981A JP 16458981 A JP16458981 A JP 16458981A JP S5864384 A JPS5864384 A JP S5864384A
Authority
JP
Japan
Prior art keywords
etching
sample
light
end point
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16458981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6337194B2 (cg-RX-API-DMAC7.html
Inventor
Hisao Haruyama
久夫 春山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16458981A priority Critical patent/JPS5864384A/ja
Publication of JPS5864384A publication Critical patent/JPS5864384A/ja
Publication of JPS6337194B2 publication Critical patent/JPS6337194B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • ing And Chemical Polishing (AREA)
JP16458981A 1981-10-14 1981-10-14 エツチング終点検出方法 Granted JPS5864384A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16458981A JPS5864384A (ja) 1981-10-14 1981-10-14 エツチング終点検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16458981A JPS5864384A (ja) 1981-10-14 1981-10-14 エツチング終点検出方法

Publications (2)

Publication Number Publication Date
JPS5864384A true JPS5864384A (ja) 1983-04-16
JPS6337194B2 JPS6337194B2 (cg-RX-API-DMAC7.html) 1988-07-25

Family

ID=15796044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16458981A Granted JPS5864384A (ja) 1981-10-14 1981-10-14 エツチング終点検出方法

Country Status (1)

Country Link
JP (1) JPS5864384A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
CN113330294A (zh) * 2019-01-22 2021-08-31 泰科英赛科技有限公司 离子束去层系统和方法以及用于其的终点监测系统和方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174407B1 (en) * 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
CN113330294A (zh) * 2019-01-22 2021-08-31 泰科英赛科技有限公司 离子束去层系统和方法以及用于其的终点监测系统和方法

Also Published As

Publication number Publication date
JPS6337194B2 (cg-RX-API-DMAC7.html) 1988-07-25

Similar Documents

Publication Publication Date Title
JP4563584B2 (ja) プラズマ・エッチング工程の精度を改善する方法および装置
EP0735565B1 (en) Method and apparatus for monitoring the dry etching of a dielectric film to a given thickness
US4245154A (en) Apparatus for treatment with gas plasma
US4680084A (en) Interferometric methods and apparatus for device fabrication
US5877032A (en) Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
US3664942A (en) End point detection method and apparatus for sputter etching
US20070068456A1 (en) Monitoring processing of a substrate in a processing chamber
Mucha et al. Chemiluminescence and the reaction of molecular fluorine with silicon
JPH0834199B2 (ja) エッチング終点検出方法及び装置
US8956809B2 (en) Apparatus and methods for etching quartz substrate in photomask manufacturing applications
JPS62190728A (ja) エツチング終点モニタ法および装置
US5748297A (en) Endpoint detecting apparatus in a plasma etching system
CN1554107A (zh) 用于确定实时蚀刻速率的浅角干涉工艺及装置
JPS5864384A (ja) エツチング終点検出方法
JP4166400B2 (ja) 放射温度測定方法
JPS62203335A (ja) エツチングモニタ−装置
JPH03148118A (ja) 半導体製造装置
JPS5825478A (ja) エツチングの終点検出方法
JP2544548B2 (ja) 表面粗さ測定方法
JPS62282435A (ja) エツチングの終点検出方法
JP2002064047A (ja) 半導体装置の製造方法および半導体製造装置
JPS63211633A (ja) プラズマエツチング装置
JPS5650516A (en) Endpoint detecting method
JPH0621012A (ja) 半導体製造方法及び製造装置
JPS5826013A (ja) 窒化シリコン膜のエツチング方法