JPS5863885U - Ignition loss reduction circuit for gate control semiconductor devices - Google Patents
Ignition loss reduction circuit for gate control semiconductor devicesInfo
- Publication number
- JPS5863885U JPS5863885U JP15792881U JP15792881U JPS5863885U JP S5863885 U JPS5863885 U JP S5863885U JP 15792881 U JP15792881 U JP 15792881U JP 15792881 U JP15792881 U JP 15792881U JP S5863885 U JPS5863885 U JP S5863885U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- resistor
- semiconductor device
- control semiconductor
- gate control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はスナバ−回路図、第２図ａ、 ｂは電流、電圧
特性図、第３図は本考案の一実施例を示す回路図、第４
図ａ、 ｂは電流特性図である。
１１・・・第１のＧＴｏ、１２・・・第１のファースト
リカバリーダイオード、１３・・・第１の抵抗、１４・
・・第２の７アーストリカバリーダイオード、１５・・
・第２の抵抗、１６・・・コンデンサ、１７・・・第２
のＧＴｏ、１８・・・ゲートドライブ回路。Figure 1 is a snubber circuit diagram, Figures 2a and b are current and voltage characteristic diagrams, Figure 3 is a circuit diagram showing an embodiment of the present invention, and Figure 4 is a snubber circuit diagram.
Figures a and b are current characteristic diagrams. DESCRIPTION OF SYMBOLS 11... 1st GTo, 12... 1st fast recovery diode, 13... 1st resistor, 14...
...Second 7 earth recovery diode, 15...
・Second resistor, 16... capacitor, 17... second
GTo, 18...gate drive circuit.
Claims (1)
子のアノード、カソード間に接続された第１の抵抗、コ
ンデンサ及び第２の抵抗を順次直列接続して成る回路と
、前記第１の抵抗９両端に接続された第１のダイオード
と、前記第２の抵抗の両端に接続された第２のダイオー
ドと、前記第１の抵抗とコンデンサの共通接続点にはア
ノード側を、前記第１のゲート制御半導体素子のゲート
にはカソード側を各々接続したところの第２のゲート制
御半導体素子と、前記第１のゲート制御半導体素子のカ
ソードと前記第２の抵抗との共通接続点と、前記第２の
ゲート制御半導体素子のゲートとの間に接続されたゲー
トドライブ回路とを備え、前記コンデンサからのスナバ
−放電電流を第２のゲート制御半導体素子を介して第１
のゲート制御半導体素子のゲートに流し、第１のゲート
制御半導体素子の点弧損失を低減した事を特徴とするゲ
ート制御半導体素子の点弧損失低減回路。A circuit comprising a first gate-controlled semiconductor device, a first resistor connected between an anode and a cathode of the gate-controlled semiconductor device, a capacitor, and a second resistor connected in series, and the first resistor 9 a first diode connected to both ends of the second resistor; a second diode connected to both ends of the second resistor; a common connection point between the first resistor and the capacitor; a second gate control semiconductor element whose cathode side is connected to the gate of the control semiconductor element, a common connection point between the cathode of the first gate control semiconductor element and the second resistor, and the second gate control semiconductor element; a gate drive circuit connected between the gate of the gate-controlled semiconductor device and the gate of the gate-controlled semiconductor device;
1. A circuit for reducing firing loss of a gate-controlled semiconductor device, characterized in that the circuit flows through the gate of a first gate-controlled semiconductor device to reduce firing loss of a first gate-controlled semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15792881U JPS5863885U (en) | 1981-10-23 | 1981-10-23 | Ignition loss reduction circuit for gate control semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15792881U JPS5863885U (en) | 1981-10-23 | 1981-10-23 | Ignition loss reduction circuit for gate control semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5863885U true JPS5863885U (en) | 1983-04-28 |
Family
ID=29950433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15792881U Pending JPS5863885U (en) | 1981-10-23 | 1981-10-23 | Ignition loss reduction circuit for gate control semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5863885U (en) |
-
1981
- 1981-10-23 JP JP15792881U patent/JPS5863885U/en active Pending
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