JPS60144326U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS60144326U JPS60144326U JP3026584U JP3026584U JPS60144326U JP S60144326 U JPS60144326 U JP S60144326U JP 3026584 U JP3026584 U JP 3026584U JP 3026584 U JP3026584 U JP 3026584U JP S60144326 U JPS60144326 U JP S60144326U
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- series connection
- connection body
- gate turn
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の半導体装置を示す回路図、第２図はこの
考案の一実施例による半導体装置を示す回路図、第３図
は半導体装置の動作を示す波形図、第４図および第５図
はこの考案の他の実施例による半導体装置を示す回路図
である。
１０・・・主サイリスタ、１１・・・補助サイリスタ、
１２・・・コンデンサ、２１・・・電界効果型トランジ
スタ（ＦＥＴ）、２２・・・ゲートターンオフサイリス
タ（ＧＴＯ）、２３・・・ゲート制御回路、４０・・・
ダイオード、５０・・・インピーダンス素子。なお、図
中、同一符号は同一または相当部分を示す。FIG. 1 is a circuit diagram showing a conventional semiconductor device, FIG. 2 is a circuit diagram showing a semiconductor device according to an embodiment of the present invention, FIG. 3 is a waveform diagram showing the operation of the semiconductor device, and FIGS. The figure is a circuit diagram showing a semiconductor device according to another embodiment of the invention. 10... Main thyristor, 11... Auxiliary thyristor,
12... Capacitor, 21... Field effect transistor (FET), 22... Gate turn-off thyristor (GTO), 23... Gate control circuit, 40...
Diode, 50... Impedance element. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (2)
直列接続された電界効果型トランジスタからなる直列接
続体と、この直列接続体にこの直列接続体と同一通電方
向に並列接続されたゲー−トターンオフサイリスタとを
備え、前記直列接続体の中間接続点は前記ゲートターン
オフサイリスタのゲート電極に接続され、前記サイリス
クをターンオフさせるときには、前記電界効果型トラン
ジスタをターンオフさせた後に前記ゲートターンオフサ
イリスタをターンオフさせるようにしたことを特徴とす
る半導体装置。(1) A series connection body consisting of a thyristor and a field effect transistor connected in series to the cathode side of the thyristor, and a gate turn-off thyristor connected in parallel to the series connection body in the same current direction as the series connection body. an intermediate connection point of the series connection body is connected to a gate electrode of the gate turn-off thyristor, and when turning off the thyristor, the gate turn-off thyristor is turned off after turning off the field effect transistor. A semiconductor device characterized by:
オフサイリスタのオ゛−ト電極との間にダイオードある
いはインピーダンス素子が挿入接続されていることを特
徴とする実用新案登録請求ρ範囲第１項記載の半導体装
置。(2) A diode or an impedance element is inserted and connected between the intermediate connection point of the series connection body and the auto electrode of the gate turn-off thyristor. The semiconductor device described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3026584U JPS60144326U (en) | 1984-03-02 | 1984-03-02 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3026584U JPS60144326U (en) | 1984-03-02 | 1984-03-02 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60144326U true JPS60144326U (en) | 1985-09-25 |
Family
ID=30529811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3026584U Pending JPS60144326U (en) | 1984-03-02 | 1984-03-02 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60144326U (en) |
-
1984
- 1984-03-02 JP JP3026584U patent/JPS60144326U/en active Pending
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