JPS5863136A - Optical dry etching device - Google Patents
Optical dry etching deviceInfo
- Publication number
- JPS5863136A JPS5863136A JP16158081A JP16158081A JPS5863136A JP S5863136 A JPS5863136 A JP S5863136A JP 16158081 A JP16158081 A JP 16158081A JP 16158081 A JP16158081 A JP 16158081A JP S5863136 A JPS5863136 A JP S5863136A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- polycrystal
- dry etching
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 10
- 230000003287 optical effect Effects 0.000 title claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000007787 solid Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 abstract description 13
- 239000010453 quartz Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は固体のドライエツチング装置に関し例えば半
導体表面のドライエツチング装置を対象とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dry etching apparatus for a solid state, and is directed to a dry etching apparatus for, for example, a semiconductor surface.
半導体装置の製造において、基材となるシリロン（日イ
〕等の半導体ウェーハやウェーハ表面の酸化膜（５ｊｏ
ｚ）等のエツチング処理に気体を化学反応させて行なう
ドライエツチング法が在来のウ１−
エツトエツチング液をｍ−たウェット法に代って洗浄処
理等の後工程を不要とする手軽さの点から最近多く採用
されつつある。In the manufacture of semiconductor devices, semiconductor wafers such as Sirilon (Japan and Indonesia) are used as base materials, and oxide films on the wafer surfaces (5jo
The dry etching method, which performs etching processes such as etching processes by chemically reacting gas, replaces the conventional wet method, which uses an etching solution, and is easy to use and does not require post-processes such as cleaning. Due to this, it has been increasingly adopted recently.
しかしながら、従来のドライエツチング法では図形状に
固体表面をエツチングする場合には固体表面にレジスト
膜を図形状に形成した後にエツチング処理を施す必要が
あり必ずしも効率的な方法とはｂえな一〇
本発明は上記した従来技術の問題を解決するために々さ
れたものであって、その目的はドライエツチングにおい
て工り効率的な図形状エツチングを可能にする装置を提
供することにある。However, in the conventional dry etching method, when etching a solid surface into a graphic shape, it is necessary to perform the etching process after forming a resist film on the solid surface in a graphic shape, which is not necessarily an efficient method. The present invention has been made to solve the problems of the prior art described above, and its object is to provide an apparatus that enables efficient pattern etching in dry etching.
上記目的を達成するためこの発明においては、固体に対
し気体を反応させるドライエツチング装置において、図
形状マスクを透過した光を固体表面に前記マスク図形を
結像させる光学系を具備することを特徴とする。In order to achieve the above object, the present invention is characterized in that a dry etching apparatus for reacting a gas with a solid is equipped with an optical system that causes light transmitted through a pattern mask to form an image of the mask pattern on the surface of the solid. do.
以下、本発明を実施例にそって説明する。The present invention will be explained below with reference to Examples.
第１図は本発明の一実施例を示すもので、２ＫＷ程にの
ＸｇあるいはＬｓ −Ｈｇランプ１からの光は反２−
射ｆｊ！２．３お工びフライ・アイ・レンズ４を通して
マスク上５に平行光線として照射され、結像光学レンズ
系６を通して石英反応管７円に設置された＋ＢＢ上に形
成された５ｚ３Ｎ４膜９と多結晶Ｓ（膜ｌＯ上にマスク
図形を結像して照射される１、石英管７内にはｃ７２ガ
スが導入され、管内圧力を２００Ｔｏｒｒに保持される
。この様に多結晶ｓ７膜上に結像図形状態で光を照射し
ながら＋Ｊ、ガスに旺すことにエリ多結晶Ｓ（は０．３
ミグ０フ１分程Ｉのエツチング速度で図形状にエツチン
グされ、５ｉ３Ｎ４膜９Ｉはエツチング舎ストップ材と
しての作用をする。FIG. 1 shows an embodiment of the present invention, in which light from an Xg or Ls-Hg lamp 1 of approximately 2 kW is reflected by 2-irradiation fj! 2.3 Parallel light is irradiated onto the mask 5 through the fly eye lens 4, and through the imaging optical lens system 6, the 5z3N4 film 9 formed on the +BB placed in the quartz reaction tube 7 and the multilayer Crystal S (1 is irradiated by forming a mask pattern on the film lO), C72 gas is introduced into the quartz tube 7, and the pressure inside the tube is maintained at 200 Torr. While irradiating light in the image state, +J is applied to the gas, and polycrystalline S (is 0.3
The 5i3N4 film 9I acts as an etching stopper material and is etched into a pattern at an etching speed of about 1 minute.
この様に図形状に結像光を固体表面に照射することにエ
リドライエツチングを図形状に行なう方式ではレジスト
を固体表面に塗布して一担露光、現象、定着等の処理を
要することなく、効率的に図形状エツチングをドライエ
ツチングで施すことができる効果がある。In this way, the method of irradiating the solid surface with imaging light in a graphic shape and performing ELID etching in a graphic shape eliminates the need for applying a resist to the solid surface and performing processes such as one-shot exposure, development, and fixing. This has the effect of efficiently performing figure etching by dry etching.
尚、図形の結像は縮少投影方式にエリ、それをステップ
・アンド・リピートで行なっても良く、３−
又、ガラス・レンズに工らず反射レンズ光学系を用すて
も良い。Incidentally, the image formation of the figure may be performed by a reduced projection method or by a step-and-repeat method, or a reflective lens optical system may be used instead of using a glass lens.
第１図は本発明の一実施例を示す照弐図である。
１・・ランプ ２．３−・反射鏡 ４・・フライ・アイ
・レンズ ５・・ガラスｅマスク ６ｅ・結像光学系
７・・石英反応管 ８・・ＳＺウェーハ ９−・Ｂｉｓ
Ｎ４Ｍ １０ ＩＩ。多結晶８ｉ膜。
以 上
出願人 株式会社諏訪精工舎
代理人 弁理士最 上 務
４−FIG. 1 is a perspective view showing an embodiment of the present invention. 1.Lamp 2.3-Reflector 4.Fly eye lens 5.Glass e-mask 6e.Imaging optical system
7..Quartz reaction tube 8..SZ wafer 9-.Bis
N4M 10 II. Polycrystalline 8i film. Applicant Suwa Seikosha Co., Ltd. Agent Patent Attorney Mogami 4-
Claims (1)
するに当り、同時に図形状マスクを透過した光を固体表
面に前記マスク図形を結像させる光学系を有することに
エリ、図形状にエツチングを行なうことを特徴とする光
ドライエツチング装置。When etching the surface of the solid by reacting a gas with the solid, it is advantageous to have an optical system that images the mask figure on the solid surface using the light transmitted through the figure mask. An optical dry etching device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16158081A JPS5863136A (en) | 1981-10-09 | 1981-10-09 | Optical dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16158081A JPS5863136A (en) | 1981-10-09 | 1981-10-09 | Optical dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5863136A true JPS5863136A (en) | 1983-04-14 |
Family
ID=15737820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16158081A Pending JPS5863136A (en) | 1981-10-09 | 1981-10-09 | Optical dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5863136A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5933830A (en) * | 1982-08-20 | 1984-02-23 | Toshiba Corp | Dry etching |
| JPS5967634A (en) * | 1982-10-09 | 1984-04-17 | Mitsubishi Electric Corp | Processing method for semiconductor device |
| JPS6041229A (en) * | 1983-08-17 | 1985-03-04 | Fujitsu Ltd | Manufacture of semiconductor device and manufacturing equipment thereof |
| JPS60254619A (en) * | 1984-05-30 | 1985-12-16 | Fujitsu Ltd | Etching method |
| JPS6379323A (en) * | 1986-09-24 | 1988-04-09 | Hitachi Ltd | Treatment equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (en) * | 1974-04-01 | 1975-10-15 | ||
| JPS54106043A (en) * | 1978-02-07 | 1979-08-20 | Mitsubishi Electric Corp | Selectively etching method |
-
1981
- 1981-10-09 JP JP16158081A patent/JPS5863136A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130370A (en) * | 1974-04-01 | 1975-10-15 | ||
| JPS54106043A (en) * | 1978-02-07 | 1979-08-20 | Mitsubishi Electric Corp | Selectively etching method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5933830A (en) * | 1982-08-20 | 1984-02-23 | Toshiba Corp | Dry etching |
| JPS5967634A (en) * | 1982-10-09 | 1984-04-17 | Mitsubishi Electric Corp | Processing method for semiconductor device |
| JPS6041229A (en) * | 1983-08-17 | 1985-03-04 | Fujitsu Ltd | Manufacture of semiconductor device and manufacturing equipment thereof |
| JPH0478005B2 (en) * | 1983-08-17 | 1992-12-10 | Fujitsu Ltd | |
| JPS60254619A (en) * | 1984-05-30 | 1985-12-16 | Fujitsu Ltd | Etching method |
| JPS6379323A (en) * | 1986-09-24 | 1988-04-09 | Hitachi Ltd | Treatment equipment |
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