JPH03155611A - Ultra-short-wave ultraviolet ray exposure apparatus - Google Patents

Ultra-short-wave ultraviolet ray exposure apparatus

Info

Publication number
JPH03155611A
JPH03155611A JP1295514A JP29551489A JPH03155611A JP H03155611 A JPH03155611 A JP H03155611A JP 1295514 A JP1295514 A JP 1295514A JP 29551489 A JP29551489 A JP 29551489A JP H03155611 A JPH03155611 A JP H03155611A
Authority
JP
Japan
Prior art keywords
hydrogen gas
ultra
graphic
short
ultraviolet ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1295514A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1295514A priority Critical patent/JPH03155611A/en
Publication of JPH03155611A publication Critical patent/JPH03155611A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To efficiently expose a fine pattern graphic by forming a system having a reflection optical unit, a mask, an exposure board and light source electrodes in a closed system of hydrogen gas, inert gas (He, Ne, Ar, Kr, Xe, etc.). CONSTITUTION:When hydrogen gas is introduced between light source electrodes (W, etc.), a light emitting source is obtained, an ultra-short-wave ultraviolet ray from the source is reflected on a reflection mask to reflect a graphic, contracted to be projected by a convex-concave mirror in actual size or 1/4 magnification to be exposed in a graphic state on an exposure surface, the system is closed in one system, hydrogen gas from a hydrogen gas introduction unit is filled in the system or hydrogen gas out of the source is reduced under reduced pressure by a vacuum pump. In the ultra-short-wave ultraviolet ray exposure thus obtained, all are in a reflection system, no absorption of the ray occurs, an optical system atmosphere does not absorb the ray, and a fine graphic can be efficiently exposed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は極短波超紫外線露光装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an extremely short wave ultraviolet exposure apparatus.

〔従来の技術〕[Conventional technology]

従来、λ−２５０ｎｍ程度の短波長紫外線露光装置は、
水銀ランプやＸｅランプを外付けとし、反射光学系等を
用いて実用されていた。Conventionally, short wavelength ultraviolet exposure equipment of about λ-250nm,
It was put into practical use using an external mercury lamp or Xe lamp and a reflective optical system.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、上記従来技術によると、水銀ランプやＸｅラン
プのランプ外壁に石英を用いる為に、ランプの放射光波
長は石英の吸収が２００ｎｍ程度である為に、２００ｎ
ｍ以下、１１００ｎ程度の極短波長紫外線を用いた露光
は不可能であると云う課題があった。However, according to the above-mentioned conventional technology, since quartz is used for the lamp outer wall of a mercury lamp or a Xe lamp, the wavelength of the emitted light from the lamp is 200nm because the absorption of quartz is about 200nm.
There was a problem in that exposure using extremely short wavelength ultraviolet rays of about 1100 nm or less was impossible.

本発明は、かかる従来技術の課題を解決し、λ＝２００
ｎｍ以下でλ−１００ｎｍ程度の極短波長紫外線を用い
た露光装置を提供する事を目的とする。The present invention solves the problems of the prior art, and
It is an object of the present invention to provide an exposure apparatus that uses extremely short wavelength ultraviolet rays of about λ-100 nm or less.

〔課題を解決する為の手段〕[Means to solve problems]

上記課題を解決するために、本発明は、光源ランプの側
壁を無くし、反射光学系により、閉ざされた系内におい
て、極短波長紫外線露光を行なう手段をとる。In order to solve the above problems, the present invention eliminates the side wall of the light source lamp and uses a reflective optical system to perform extremely short wavelength ultraviolet exposure in a closed system.

〔実　施　例〕〔Example〕

以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

いま、光源電極（Ｗ等）間に水素ガスを導入し、約λ１
１００ｎの発光源を得、該発光源からの極短波長紫外線
を反射型マスクを反射させて、図形を反射し、凹凸鏡に
より等倍あるいは１／４倍に縮少投影して露光面上に図
形状に露光するに際し、これらの系を一つの閉ざされた
系となし、例えば水素ガス導入部からの水素ガスは、系
内に充満させるか、あるいは、光源外部の水素ガスは、
真空ポンプにより減圧状態にする事ができる。この様に
して得た極短波長紫外線露光では、全てが反射系であり
、極短波長紫外線の吸収もなく、且つ光学系雰囲気も極
短波長紫外線を吸収する事も少なく、微細な図形を効率
良く露光できることとなる。Now, hydrogen gas is introduced between the light source electrodes (W etc.) and the temperature is about λ1.
A 100n light emitting source is obtained, and the extremely short wavelength ultraviolet rays emitted from the light emitting source are reflected by a reflective mask to reflect the figure, and projected onto the exposure surface by reducing it to the same size or 1/4 times with a concave-convex mirror. When exposing a figure, these systems are treated as one closed system, and for example, hydrogen gas from the hydrogen gas inlet is filled in the system, or hydrogen gas outside the light source is
A vacuum pump can be used to create a reduced pressure state. The ultra-short wavelength ultraviolet rays obtained in this way are entirely reflective, and there is no absorption of ultra-short wavelength ultraviolet rays, and the atmosphere of the optical system hardly absorbs ultra-short wavelength ultraviolet rays, making it possible to efficiently produce fine patterns. This allows for good exposure.

〔発明の効果〕〔Effect of the invention〕

本発明により、微細なパターン図形を効率良く露光でき
る極短波超紫外線露光装置を提供することができる効果
がある。The present invention has the advantage that it is possible to provide an extremely short wave ultraviolet exposure apparatus that can efficiently expose fine pattern figures.

以上that's all

Claims (1)

【特許請求の範囲】[Claims] 反射光学系、マスク、露光基板および光源電極を含む系
は水素ガスや不活性ガス（Ｈｅ、Ｎｅ、Ａｒ、Ｋｒ、Ｘ
ｅ等）にて閉ざされた系となす事を特徴とする極短波超
紫外線露光装置。The system including the reflective optical system, mask, exposure substrate, and light source electrode is heated with hydrogen gas or inert gas (He, Ne, Ar, Kr, X
An extremely short wave ultra-ultraviolet exposure device characterized by a closed system (e.g.).
JP1295514A 1989-11-14 1989-11-14 Ultra-short-wave ultraviolet ray exposure apparatus Pending JPH03155611A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1295514A JPH03155611A (en) 1989-11-14 1989-11-14 Ultra-short-wave ultraviolet ray exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1295514A JPH03155611A (en) 1989-11-14 1989-11-14 Ultra-short-wave ultraviolet ray exposure apparatus

Publications (1)

Publication Number Publication Date
JPH03155611A true JPH03155611A (en) 1991-07-03

Family

ID=17821607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1295514A Pending JPH03155611A (en) 1989-11-14 1989-11-14 Ultra-short-wave ultraviolet ray exposure apparatus

Country Status (1)

Country Link
JP (1) JPH03155611A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122482A (en) * 1989-03-31 1992-06-16 Agency Of Industrial Science & Technology Method for treating surface of silicon
WO1998057213A1 (en) * 1997-06-10 1998-12-17 Nikon Corporation Optical device, method of cleaning the same, projection aligner, and method of producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122482A (en) * 1989-03-31 1992-06-16 Agency Of Industrial Science & Technology Method for treating surface of silicon
WO1998057213A1 (en) * 1997-06-10 1998-12-17 Nikon Corporation Optical device, method of cleaning the same, projection aligner, and method of producing the same

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