JPS5863129A - 薄膜半導体の製造方法 - Google Patents

薄膜半導体の製造方法

Info

Publication number
JPS5863129A
JPS5863129A JP56161429A JP16142981A JPS5863129A JP S5863129 A JPS5863129 A JP S5863129A JP 56161429 A JP56161429 A JP 56161429A JP 16142981 A JP16142981 A JP 16142981A JP S5863129 A JPS5863129 A JP S5863129A
Authority
JP
Japan
Prior art keywords
thin film
germanium
hydrogen gas
ion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56161429A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6157695B2 (enrdf_load_stackoverflow
Inventor
Kazu Yamanaka
山中　計
Takeshi Aragai
新貝　健
Masahiro Hotta
堀田　正裕
Toshio Kamisaka
上坂　外志夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP56161429A priority Critical patent/JPS5863129A/ja
Publication of JPS5863129A publication Critical patent/JPS5863129A/ja
Publication of JPS6157695B2 publication Critical patent/JPS6157695B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP56161429A 1981-10-09 1981-10-09 薄膜半導体の製造方法 Granted JPS5863129A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56161429A JPS5863129A (ja) 1981-10-09 1981-10-09 薄膜半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56161429A JPS5863129A (ja) 1981-10-09 1981-10-09 薄膜半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS5863129A true JPS5863129A (ja) 1983-04-14
JPS6157695B2 JPS6157695B2 (enrdf_load_stackoverflow) 1986-12-08

Family

ID=15734934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56161429A Granted JPS5863129A (ja) 1981-10-09 1981-10-09 薄膜半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS5863129A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6157695B2 (enrdf_load_stackoverflow) 1986-12-08

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